CN106057636A - 在3d nand存储设备中用于提高竖直蚀刻性能的膜的等离子体增强化学气相沉积 - Google Patents

在3d nand存储设备中用于提高竖直蚀刻性能的膜的等离子体增强化学气相沉积 Download PDF

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CN106057636A
CN106057636A CN201610195296.6A CN201610195296A CN106057636A CN 106057636 A CN106057636 A CN 106057636A CN 201610195296 A CN201610195296 A CN 201610195296A CN 106057636 A CN106057636 A CN 106057636A
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film layer
layer
film
silicon
silicon nitride
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Chinese (zh)
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P·P·贾
A·阔
韩新海
T·J·权
金柏涵
B·H·祁
R·金
S·H·金
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Applied Materials Inc
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Applied Materials Inc
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
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CN201610195296.6A 2015-04-01 2016-03-31 在3d nand存储设备中用于提高竖直蚀刻性能的膜的等离子体增强化学气相沉积 Pending CN106057636A (zh)

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US201562141606P 2015-04-01 2015-04-01
US62/141,606 2015-04-01

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US (2) US10246772B2 (enExample)
JP (2) JP6820153B2 (enExample)
KR (1) KR102456460B1 (enExample)
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TW (2) TWI719015B (enExample)

Cited By (13)

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CN106920798A (zh) * 2017-03-07 2017-07-04 长江存储科技有限责任公司 一种三维存储器堆栈结构及其堆叠方法及三维存储器
CN107564800A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种氮化硅层的制备方法
CN107946311A (zh) * 2017-11-21 2018-04-20 长江存储科技有限责任公司 控制3d nand闪存结构中沟道关键尺寸的方法
CN108630705A (zh) * 2017-03-23 2018-10-09 东芝存储器株式会社 半导体存储装置
CN111557047A (zh) * 2019-06-28 2020-08-18 长江存储科技有限责任公司 半导体器件制造方法
CN112020574A (zh) * 2018-04-27 2020-12-01 应用材料公司 具有周期性高电压偏压的等离子体增强cvd
CN112771645A (zh) * 2018-07-31 2021-05-07 应用材料公司 用于3d nand的氧化物/氮化物(on)堆叠覆盖改良
CN112928065A (zh) * 2021-03-24 2021-06-08 长江存储科技有限责任公司 一种深孔形成方法以及三维存储器的形成方法
CN114175214A (zh) * 2019-11-08 2022-03-11 东京毅力科创株式会社 蚀刻方法
CN114424325A (zh) * 2019-08-07 2022-04-29 应用材料公司 用于3d nand的修改的堆叠
US11482535B2 (en) 2019-06-28 2022-10-25 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
US11812611B2 (en) 2019-06-28 2023-11-07 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
US11839079B2 (en) 2019-06-28 2023-12-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same

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US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
CN105934819B (zh) * 2014-01-21 2019-04-26 应用材料公司 用于3d闪存应用的电介质-金属堆叠
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
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