CN105405815B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN105405815B
CN105405815B CN201510575213.1A CN201510575213A CN105405815B CN 105405815 B CN105405815 B CN 105405815B CN 201510575213 A CN201510575213 A CN 201510575213A CN 105405815 B CN105405815 B CN 105405815B
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insulating substrate
insulated substrate
semiconductor device
resin
housing
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CN105405815A (zh
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大坪义贵
吉田博
藤野纯司
菊池正雄
村井淳
村井淳一
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Mitsubishi Electric Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/255Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • HELECTRICITY
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    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/60Securing means for detachable heating or cooling arrangements, e.g. clamps
    • H10W40/611Bolts or screws
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    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • HELECTRICITY
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    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
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    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
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    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
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    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
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    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
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    • H10W72/541Dispositions of bond wires
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    • H10W72/5475Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
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    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings
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    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
CN201510575213.1A 2014-09-10 2015-09-10 半导体装置及其制造方法 Active CN105405815B (zh)

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JP2014-183972 2014-09-10
JP2014183972A JP6356550B2 (ja) 2014-09-10 2014-09-10 半導体装置およびその製造方法

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CN105405815B true CN105405815B (zh) 2018-06-22

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US (1) US9443778B2 (https=)
JP (1) JP6356550B2 (https=)
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DE (1) DE102015213495B4 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN114530435A (zh) * 2020-11-02 2022-05-24 三菱电机株式会社 功率半导体模块及电力转换装置

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6775385B2 (ja) * 2015-11-10 2020-10-28 昭和電工株式会社 パワーモジュール用ベース
KR101922874B1 (ko) * 2015-12-21 2018-11-28 삼성전기 주식회사 전자 부품 패키지
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US9929066B1 (en) * 2016-12-13 2018-03-27 Ixys Corporation Power semiconductor device module baseplate having peripheral heels
JP7042217B2 (ja) * 2016-12-27 2022-03-25 ヌヴォトンテクノロジージャパン株式会社 半導体装置
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JP6766744B2 (ja) * 2017-05-10 2020-10-14 株式会社豊田自動織機 半導体モジュール
JP2018195717A (ja) * 2017-05-17 2018-12-06 富士電機株式会社 半導体モジュール、半導体モジュールのベース板および半導体装置の製造方法
JP7034613B2 (ja) * 2017-06-29 2022-03-14 太陽誘電株式会社 セラミック電子部品及びその製造方法、並びに電子部品実装基板
US11031355B2 (en) 2017-07-03 2021-06-08 Mitsubishi Electric Corporation Semiconductor device
JP7013728B2 (ja) * 2017-08-25 2022-02-01 富士電機株式会社 半導体装置
JP6768612B2 (ja) * 2017-09-06 2020-10-14 三菱電機株式会社 半導体装置
JP6852649B2 (ja) * 2017-10-24 2021-03-31 株式会社オートネットワーク技術研究所 回路構成体及び回路構成体の製造方法
JP6827402B2 (ja) 2017-11-17 2021-02-10 三菱電機株式会社 半導体装置
KR102008278B1 (ko) * 2017-12-07 2019-08-07 현대오트론 주식회사 파워칩 통합 모듈과 이의 제조 방법 및 양면 냉각형 파워 모듈 패키지
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EP3506344A1 (de) * 2017-12-29 2019-07-03 Siemens Aktiengesellschaft Halbleiterbaugruppe
JP2019129201A (ja) * 2018-01-23 2019-08-01 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
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US11107962B2 (en) * 2018-12-18 2021-08-31 Soulnano Limited UV LED array with power interconnect and heat sink
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JP7257977B2 (ja) * 2020-01-17 2023-04-14 三菱電機株式会社 半導体装置および半導体モジュール
US20230118890A1 (en) * 2020-03-26 2023-04-20 Mitsubishi Electric Corporation Semiconductor device, and manufacturing method therefor
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EP3979313B1 (de) * 2020-09-30 2022-11-30 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische einrichtung und leistungshalbleitermodul damit
JP7487695B2 (ja) * 2021-03-26 2024-05-21 三菱電機株式会社 半導体装置
JP7615834B2 (ja) * 2021-03-30 2025-01-17 株式会社三社電機製作所 半導体装置及び放熱器組立体並びに半導体装置及び放熱器の組立方法
JP7749955B2 (ja) * 2021-07-09 2025-10-07 富士電機株式会社 半導体モジュールおよびその製造方法
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US20240023285A1 (en) * 2022-07-13 2024-01-18 Quantum-Si Incorporated Flexible metal chip cooling interface
JP7728236B2 (ja) * 2022-09-01 2025-08-22 三菱電機株式会社 ベース板、半導体装置、ベース板の製造方法および半導体装置の製造方法
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EP4432345B1 (en) * 2023-03-16 2025-05-07 Hitachi Energy Ltd Insulated metal substrate and method for producing an insulated metal substrate
US12543611B2 (en) * 2023-04-19 2026-02-03 Littelfuse, Inc. Method to connect power terminal to substrate within semiconductor package
JP2025174033A (ja) * 2024-05-16 2025-11-28 三菱電機株式会社 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102820271A (zh) * 2011-06-09 2012-12-12 三菱电机株式会社 半导体装置
CN101924080B (zh) * 2009-05-28 2013-06-12 英飞凌科技股份有限公司 具有被弹性支撑的基板的功率半导体模块及制备功率半导体模块方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1201836B (it) * 1986-07-17 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore montato in un contenitore segmentato altamente flessibile e fornite di dissipatore termico
DE3915707A1 (de) * 1989-05-13 1990-11-22 Asea Brown Boveri Kunststoffgehaeuse und leistungshalbleitermodul mit diesem gehaeuse
JP3225457B2 (ja) 1995-02-28 2001-11-05 株式会社日立製作所 半導体装置
JP3519299B2 (ja) 1999-01-06 2004-04-12 芝府エンジニアリング株式会社 半導体装置
JP3919398B2 (ja) * 1999-10-27 2007-05-23 三菱電機株式会社 半導体モジュール
JP2002315357A (ja) 2001-04-16 2002-10-25 Hitachi Ltd インバータ装置
JP2006100640A (ja) 2004-09-30 2006-04-13 Hitachi Metals Ltd セラミックス回路基板及びこれを用いたパワー半導体モジュール
JP5061717B2 (ja) * 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
EP2149903B1 (en) * 2007-05-18 2019-10-30 Sansha Electric Manufacturing Company, Limited Semiconductor module for electric power
JP2009130168A (ja) * 2007-11-26 2009-06-11 Nissan Motor Co Ltd 半導体装置および半導体装置の絶縁方法
JP5285347B2 (ja) * 2008-07-30 2013-09-11 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
JP5362624B2 (ja) * 2010-03-09 2013-12-11 株式会社三社電機製作所 パワー半導体モジュール
US9117795B2 (en) * 2012-02-09 2015-08-25 Fuji Electric Co., Ltd. Semiconductor device
JP2013229369A (ja) * 2012-04-24 2013-11-07 Denso Corp モールドパッケージ
KR20150053874A (ko) * 2012-09-13 2015-05-19 후지 덴키 가부시키가이샤 반도체 장치, 반도체 장치에 대한 방열 부재의 부착 방법 및 반도체 장치의 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101924080B (zh) * 2009-05-28 2013-06-12 英飞凌科技股份有限公司 具有被弹性支撑的基板的功率半导体模块及制备功率半导体模块方法
CN102820271A (zh) * 2011-06-09 2012-12-12 三菱电机株式会社 半导体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114530435A (zh) * 2020-11-02 2022-05-24 三菱电机株式会社 功率半导体模块及电力转换装置
CN114530435B (zh) * 2020-11-02 2025-12-05 三菱电机株式会社 功率半导体模块及电力转换装置

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