JP6743916B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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Description
−半導体装置の構造−
第1の実施の形態に係る半導体装置は、図1に示すように、半導体チップ7を搭載した矩形状の絶縁回路基板(3a,3b,3c)と、絶縁回路基板(3a,3b,3c)の周縁に接合する接合領域8をなす側壁部の下端面を有する直方体状で箱型のケース1aと、を備える。ケース1a及び絶縁回路基板(3a,3b,3c)は、接着剤13の層を介して接合される。ケース1aには、冷却器との取り付けに用いられる第1取り付けプレート2a及び第2取り付けプレート2bが設けられている。
ここで、図8に例示した比較例に係る半導体装置のように、ヒートサイクルの負荷前であっても、絶縁回路基板(3a,3b,3c)には、半導体チップ7を搭載するための半田付け等の処理時に加えられる熱履歴によって、上側に凸状に反る場合がある。半導体チップ7は、顧客の望む仕様によってサイズや形状が異なるため、半田付け等の処理時に加えられる熱量もそれぞれ異なる。そのため絶縁回路基板(3a,3b,3c)に生じる反りの方向や反り量には、搭載する半導体チップ7によってバラつきが生じる。
次に、図1〜図7に示した第1の実施の形態に係る半導体装置の製造方法を、図13及び図14を参照して例示的に説明する。まず印刷技術等により表面上の所定の領域に半田メッキ処理等が施された絶縁回路基板(3a,3b,3c)を用意し、この回路基板上に、図13中の下段に示すように、半導体チップ7及びその他の所定の部品を搭載する。
図1に示した半導体装置のケース1aでは接合領域8のうち短辺側の側壁部の下端を円弧状としたが、短辺の下端を円弧状としなくても第1の実施の形態に係る半導体装置を実現できる。例えば図15に示した第1変形例に係る半導体装置のケース1bのように、一組の長辺側の側壁部のそれぞれの下端が、中央が絶縁回路基板(3a,3b,3c)側に凸となるように突出して湾曲する円弧状であってよい。長辺側の側壁部の主面を正面から見た場合、側壁部の下端面である接合領域8は円弧状に表れる。図16に示すように、熱伝導グリース6は、絶縁回路基板(3a,3b,3c)の対向する長辺間の長辺のほぼ中央位置で、短辺に沿って棒状に延びる近接領域C2から短辺方向に向かうように押し広げられる。熱伝導グリース6の層中では、絶縁回路基板(3a,3b,3c)の近接領域C2に接する領域の厚みは他の領域に比べ最も薄くなる。第1変形例に係る半導体装置の他の構造については、第1の実施の形態に係る半導体装置における同名の部材と等価であるため重複説明を省略する。第1変形例に係る半導体装置においても、下側に凸となるように突出して湾曲する下端形状の側壁部を有するケース1bの側壁部の下端面の接合領域8を介した接合によって、絶縁回路基板(3a,3b,3c)は下側の冷却器5側に正反りするように形状が矯正される。
また図17に示した第2変形例に係る半導体装置のケース1cのように、ケース1c接合領域8の四辺の側壁部の下端がいずれも、中央が絶縁回路基板(3a,3b,3c)側に凸となるように突出して湾曲する円弧状であっても、第1の実施の形態に係る半導体装置を実現できる。長辺側及び短辺側の側壁部の主面を正面から見た場合、それぞれの側壁部の下端面である接合領域8はいずれも円弧状に表れる。熱伝導グリース6は、絶縁回路基板(3a,3b,3c)の中央の近接領域C3から周囲四方に向かうように押し広げられ、熱伝導グリース6の層中では、絶縁回路基板(3a,3b,3c)の近接領域C3に接する領域の厚みは他の領域に比べ最も薄くなる。第2変形例に係る半導体装置の他の構造については、第1の実施の形態に係る半導体装置における同名の部材と等価であるため重複説明を省略する。第2変形例に係る半導体装置においても、図18に示すように、下側に凸となるように突出して湾曲する下端形状の側壁部を有するケース1bの側壁部の下端面の接合領域8を介して、絶縁回路基板(3a,3b,3c)は下側の冷却器5側に正反りするように形状が矯正される。
第2の実施の形態に係る半導体装置は、半導体チップを搭載した矩形状の絶縁回路基板と、図19に示すような絶縁回路基板の周縁に接合する内側壁21aの上端面を接合領域として有する直方体状のケース21と、を備える。
第3の実施の形態に係る半導体装置は、図22に示すように、半導体チップを搭載した絶縁回路基板と、絶縁回路基板の周縁に接合する接合領域を有するケース31と、を備える。図22中では半導体チップの図示は省略する。また図22は、図19及び図20と同様に、説明の便宜のため、ケース31の天地を逆にして示されている。
本発明は上記の開示した実施の形態によって説明したが、この開示の一部をなす論述及び図面は、本発明を限定するものであると理解すべきではない。本開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかになると考えられるべきである。
2a 第1取り付けプレート
2b 第2取り付けプレート
3a 絶縁基板
3b 表面導電箔
3c 裏面導電箔
4a 第1取り付けねじ
4b 第2取り付けねじ
5 冷却器
5a,5b 放熱板
6,6a 熱伝導グリース
7 半導体チップ
8 接合領域
10 空隙
13 接着剤
21 ケース
21s 内壁面
21a 内側壁
21b 支持外側壁
22 接合部
23 接着剤
24 外側ポケット
25 内側ポケット
31 ケース
31a〜31f 第1の半導体モジュール〜第6の半導体モジュール
3a1〜3a6 絶縁基板
3c1〜3c6 裏面導電箔
C1 近接領域
C2 近接領域
C3 近接領域
D1,D2 中央領域
w 正反り量
Claims (10)
- 半導体チップを搭載した絶縁回路基板と、
絶縁回路基板に接合する接合領域を少なくとも対向する2辺をなす一組の側壁部にそれぞれ有し、前記接合領域の形状が、前記2辺の延びる方向の中央が両端より前記絶縁回路基板側に突出する円弧状であるケースと、
を備え、
前記ケースは直方体状であり、前記円弧状の前記接合領域は、短辺の側壁部に設けられており、前記ケースの長辺の側壁部に、冷却器との取り付け具を更に備えることを特徴とする半導体装置。 - 半導体チップを搭載した絶縁回路基板と、
絶縁回路基板に接合する接合領域を少なくとも対向する2辺をなす一組の側壁部にそれぞれ有し、前記接合領域の形状が、前記2辺の延びる方向の中央が両端より前記絶縁回路基板側に突出する円弧状であるケースと、
を備え、
前記ケースは直方体状であり、前記ケースの側壁部に冷却器との取り付け具を更に備え、前記冷却器が有する複数の放熱板の延びる方向が、前記絶縁回路基板の中で前記冷却器に近接する近接領域の延びる方向と直交することを特徴とする半導体装置。 - 半導体チップを搭載した絶縁回路基板と、
絶縁回路基板に接合する接合領域を少なくとも対向する2辺をなす一組の側壁部にそれぞれ有し、前記接合領域の形状が、前記2辺の延びる方向の中央が両端より前記絶縁回路基板側に突出する円弧状であるケースと、
を備え、
前記側壁部は、前記絶縁回路基板を支持する支持外側壁を、更に有することを特徴とする半導体装置。 - 前記側壁部と前記絶縁回路基板との間に、接着剤を収めるポケットを、更に備えることを特徴とする請求項3に記載の半導体装置。
- 前記絶縁回路基板は、絶縁基板と、該絶縁基板の前記半導体チップと反対側の面に設けられた裏面導電箔とを有し、
前記裏面導電箔は、前記接合領域と重なるように前記絶縁基板の端部側に延びることを特徴とする請求項3に記載の半導体装置。 - 前記円弧状の前記接合領域に追従して沿った前記絶縁回路基板の反り量は、0μmより大きく100μm以下であることを特徴とする請求項1〜5のいずれか一項に記載の半導体装置。
- 前記ケースは、前記円弧状の前記接合領域を有する一組の前記側壁部を、複数組備えることを特徴とする請求項1〜6のいずれか一項に記載の半導体装置。
- 半導体チップを絶縁回路基板に搭載する工程と、
直方体状であり、前記絶縁回路基板に接合する接合領域を少なくとも対向する2辺をなす一組の側壁部にそれぞれ有し、前記接合領域の形状が、前記2辺の延びる方向の中央が両端より前記絶縁回路基板側に突出する円弧状であり、前記円弧状の前記接合領域は短辺の側壁部に設けられており、長辺の側壁部に冷却器との取り付け具を備えるケースを用意する工程と、
前記ケースを前記絶縁回路基板に接合する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 半導体チップを絶縁回路基板に搭載する工程と、
直方体状であり、前記絶縁回路基板に接合する接合領域を少なくとも対向する2辺をなす一組の側壁部にそれぞれ有し、前記接合領域の形状が、前記2辺の延びる方向の中央が両端より前記絶縁回路基板側に突出する円弧状であり、側壁部に冷却器との取り付け具を備え、前記絶縁回路基板の中で前記冷却器に近接する近接領域の延びる方向が前記冷却器が有する複数の放熱板の延びる方向と直交するケースを用意する工程と、
前記ケースを前記絶縁回路基板に接合する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 半導体チップを絶縁回路基板に搭載する工程と、
前記絶縁回路基板に接合する接合領域を少なくとも対向する2辺をなす一組の側壁部にそれぞれ有し、前記接合領域の形状が、前記2辺の延びる方向の中央が両端より前記絶縁回路基板側に突出する円弧状であり、前記側壁部は前記絶縁回路基板を支持する支持外側壁を有するケースを用意する工程と、
前記ケースを前記絶縁回路基板に接合する工程と、
を含むことを特徴とする半導体装置の製造方法。
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