JP7156025B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7156025B2 JP7156025B2 JP2018512232A JP2018512232A JP7156025B2 JP 7156025 B2 JP7156025 B2 JP 7156025B2 JP 2018512232 A JP2018512232 A JP 2018512232A JP 2018512232 A JP2018512232 A JP 2018512232A JP 7156025 B2 JP7156025 B2 JP 7156025B2
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- JP
- Japan
- Prior art keywords
- semiconductor chip
- protrusion
- jig
- electrode
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 193
- 239000004020 conductor Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 description 41
- 238000004519 manufacturing process Methods 0.000 description 31
- 239000011347 resin Substances 0.000 description 25
- 229920005989 resin Polymers 0.000 description 25
- 238000000034 method Methods 0.000 description 16
- 238000005304 joining Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 230000017525 heat dissipation Effects 0.000 description 12
- 238000007796 conventional method Methods 0.000 description 5
- 239000000725 suspension Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000012447 hatching Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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Description
次に、半導体装置の製造方法について説明する。以下では、複数の製造方法について説明する。以下に説明する製造方法のうちのいくつかによって、図2、3に示す半導体装置10を製造することができる。また、以下に説明する製造方法のうちのいくつかを応用した製造方法によって、図4、8、9の半導体装置を製造することができる。但し、図2、3、4、8、9の半導体装置は、その他の製造方法によって製造されてもよい。
本明細書が開示する製造方法について、従来技術と比較しながら、以下に説明する。
Claims (4)
- 半導体装置であって、
半導体基板と前記半導体基板の表面に設けられた表面電極を有する半導体チップと、
板状部と前記板状部から突出する第1凸部と前記第1凸部の端面から突出する第2凸部を有し、前記第2凸部の端面が前記表面電極に接続されている導体板、
を有し、
前記第2凸部の前記端面の幅が、前記第1凸部の前記板状部側の基部の幅よりも狭く、
前記第1凸部の前記端面に、前記第2凸部の前記端面の外周縁に沿って伸びる溝が設けられている、
半導体装置。 - 半導体装置であって、
半導体基板と前記半導体基板の表面に設けられた表面電極を有する半導体チップと、
板状部と前記板状部から突出する凸部を有し、前記凸部の端面が前記表面電極に接続されている導体板、
を有し、
前記凸部の前記端面の幅が、前記凸部の前記板状部側の基部の幅よりも狭く、
前記凸部に隣接する前記板状部の表面に、前記端面の外周縁に沿って伸びる溝が設けられている、
半導体装置。 - 前記凸部の幅が、前記基部から前記端面に向かうにしたがって連続的に狭くなる請求項2の半導体装置。
- 前記半導体チップが、前記表面に設けられた信号電極を有しており、
前記信号電極に接続されている信号端子をさらに有する請求項1~3のいずれか一項の半導体装置。
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US10541223B2 (en) * | 2017-05-05 | 2020-01-21 | Kulicke And Soffa Industries, Inc. | Methods of operating a wire bonding machine to improve clamping of a substrate, and wire bonding machines |
JP7141316B2 (ja) | 2018-11-21 | 2022-09-22 | 日立Astemo株式会社 | パワー半導体装置 |
JP7207150B2 (ja) * | 2019-05-15 | 2023-01-18 | 株式会社デンソー | 半導体装置 |
JP7215320B2 (ja) * | 2019-05-15 | 2023-01-31 | 株式会社デンソー | 半導体装置 |
JP2020198388A (ja) * | 2019-06-04 | 2020-12-10 | 株式会社デンソー | 半導体装置およびその製造方法 |
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WO2021152795A1 (ja) * | 2020-01-30 | 2021-08-05 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
CN112289752B (zh) * | 2020-12-01 | 2023-04-11 | 江苏捷捷微电子股份有限公司 | 一种倒装GaN功率器件封装结构及其制备方法 |
WO2024157458A1 (ja) * | 2023-01-27 | 2024-08-02 | 日立Astemo株式会社 | 半導体装置、電力変換装置 |
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JP5910653B2 (ja) * | 2014-03-18 | 2016-04-27 | トヨタ自動車株式会社 | 放熱板付きリードフレーム、放熱板付きリードフレームの製造方法、半導体装置、および半導体装置の製造方法 |
JP6256145B2 (ja) * | 2014-03-26 | 2018-01-10 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP6485397B2 (ja) * | 2016-04-04 | 2019-03-20 | 株式会社デンソー | 電子装置及びその製造方法 |
JP6485398B2 (ja) * | 2016-04-13 | 2019-03-20 | 株式会社デンソー | 電子装置及びその製造方法 |
JP6610590B2 (ja) * | 2017-03-21 | 2019-11-27 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
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2017
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- 2018-02-16 DE DE112018001743.5T patent/DE112018001743T5/de active Granted
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- 2018-03-27 DE DE102018204668.9A patent/DE102018204668A1/de active Pending
- 2018-03-28 CN CN201810263524.8A patent/CN108695177B/zh active Active
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JP3836010B2 (ja) | 2001-10-19 | 2006-10-18 | 三菱電機株式会社 | 半導体装置 |
JP2013021254A (ja) | 2011-07-14 | 2013-01-31 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
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JP6874467B2 (ja) | 2021-05-19 |
US20180286702A1 (en) | 2018-10-04 |
DE102018204668A1 (de) | 2018-10-04 |
CN110520983A (zh) | 2019-11-29 |
DE112018001743T5 (de) | 2019-12-19 |
JP2018170348A (ja) | 2018-11-01 |
CN108695177B (zh) | 2021-11-02 |
US20200035588A1 (en) | 2020-01-30 |
CN108695177A (zh) | 2018-10-23 |
JPWO2018179981A1 (ja) | 2020-03-05 |
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