JP5745238B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP5745238B2 JP5745238B2 JP2010172642A JP2010172642A JP5745238B2 JP 5745238 B2 JP5745238 B2 JP 5745238B2 JP 2010172642 A JP2010172642 A JP 2010172642A JP 2010172642 A JP2010172642 A JP 2010172642A JP 5745238 B2 JP5745238 B2 JP 5745238B2
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- Engineering & Computer Science (AREA)
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Description
12A、12B、12C リード
14 アイランド
14C 平坦領域
15 溝
16A、16B 金属接続板
17A、17B 突起部
18 半導体素子
20 タブ
22 連結部
24 封止樹脂
26A、26B 接続部
28 導電性固着材
28E 染み出し領域
30 側壁
46 リードフレーム
48 外枠
50 ユニット
AR 固着領域
Claims (15)
- アイランドと、
前記アイランドの主面に導電性固着材により固着された半導体素子と、
前記アイランドの主面に前記半導体素子の側辺に沿う帯状に設けられ、前記半導体素子の1つのコーナー部下方において不連続である溝と、
前記半導体素子と接続されるリードとを備え、
前記溝は前記半導体素子の側辺よりも内側に配置される一方の側壁端部と、前記一方の側壁端部と対向し前記半導体素子の側辺よりも外側に配置される他方の側壁端部とを有し、前記溝内には前記導電性固着材が充填されることを特徴とする半導体装置。 - 前記溝は、前記コーナー部の対角のコーナー部下方において不連続であることを特徴とする請求項1に記載の半導体装置。
- 前記溝は、前記半導体素子の他の対角に位置するコーナー部下方において不連続であることを特徴とする請求項2に記載の半導体装置。
- 前記半導体素子の1つまたは複数の前記コーナー部下方において前記アイランドの主面に前記導電性固着材が露出することを特徴とする請求項1から請求項3のいずれかに記載の半導体装置。
- 前記溝の最深部は、前記半導体素子の側辺と重なるように配置されることを特徴とする請求項1から請求項4のいずれかに記載の半導体装置。
- 前記アイランドには前記溝の他方の側壁端部の外側に前記アイランド面よりも高い段差部が配置されることを特徴とする請求項1から請求項5のいずれかに記載の半導体装置。
- 前記半導体素子および前記リードは金属接続板により接続されることを特徴とする請求項1から請求項6のいずれかに記載の半導体装置。
- 前記金属接続板は厚み方向に突出する突起部が設けられ、該突起部が前記リードの前記アイランド側の端部と当接することを特徴とする請求項7に記載の半導体装置。
- 前記半導体素子、前記アイランド、および前記リードの一部を被覆する封止樹脂層を有することを特徴とする請求項1から請求項8のいずれかに記載の半導体装置。
- 半導体素子が固着される主面に該半導体素子の側辺に沿う帯状であって該半導体素子のコーナー部下方において不連続となる溝が形成されたアイランドと、該アイランドと離間するリードと、が設けられたリードフレームを準備する工程と、
前記溝の内側の前記アイランドの一主面に所定温度で溶融するペースト状の導電性固着材を配置する工程と、
前記溝に重ねて前記半導体素子を配置する工程と、
前記半導体素子と前記リードの端部の一主面にそれぞれ、所定温度で溶融するペースト状の他の導電性固着材を配置する工程と、
前記他の導電性固着材を介して導電部材の一端を前記半導体素子上に、他端を前記リードの端部上に配置する工程と、
前記導電性固着材と前記他の導電性固着材を同時に溶融し、前記半導体素子の前記コーナー部下方の前記アイランドの一主面に前記導電性固着材の一部を露出させ、且つ前記溝の一方の側壁端部が前記半導体素子の側辺の内側に配置され、前記一方の側壁端部と対向する前記溝の他方の側壁端部が前記半導体素子の側辺の外側に配置されるように前記半導体素子を前記アイランドの一主面に固着し、前記導電部材を前記半導体素子及び前記リードの端部に固着する工程と、
封止樹脂層により前記アイランド、前記半導体素子、前記導電部材および前記リードの一部を被覆する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 前記導電部材は金属接続板であることを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記金属接続板は、厚み方向に突出する突起部が設けられ、該突起部を前記リードの端部と当接させて配置されることを特徴とする請求項11に記載の半導体装置の製造方法。
- 前記半導体素子は、前記金属接続板によって前記導電性固着材の溶融前の位置が固定されることを特徴とする請求項12に記載の半導体装置の製造方法。
- 前記アイランドの前記溝の他方の側壁端部の外側に前記アイランド面よりも高い段差部を形成し、前記導電性固着材は前記溝内に充填されることを特徴とする請求項10から請求項13のいずれかに記載の半導体装置の製造方法。
- 前記導電性固着材が溶融して前記溝の形成領域より内側に留まることにより、前記半導体素子は前記側辺が前記溝に沿うように位置決めされ、固着されることを特徴とする請求項10から請求項14のいずれかに記載の半導体装置の製造方法。
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