CN217280758U - 分立功率半导体封装 - Google Patents
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Abstract
本实用新型涉及分立功率半导体封装,其包括半导体芯片、散热器、第一引线、第二引线和夹片。散热器邻近半导体芯片并从半导体芯片吸走热量。夹片将半导体芯片结合至散热器,并包括芯片连结器、第一端子和第二端子。芯片连结器位于半导体芯片的顶部。第一端子连接至第一引线,且第二端子连接至第二引线。
Description
技术领域
本公开的实施例涉及分立半导体封装,并且更具体地涉及高可靠性的TO-263的分立半导体封装。
背景技术
分立半导体为一种指定用于执行基础电子功能的装置,并且该分立半导体是本身不可分割为独立的功能部件。功率半导体用作功率电子器件中的开关或整流器。二极管、晶体管、晶闸管和整流器都是分立功率半导体的示例。从较低功率系统到较高功率系统,分立功率半导体存在于各种不同的环境中。
有许多用于容纳分立功率半导体的封装。例如,TO-263是一种用于表面式地安装在印刷电路板(PCB)上的半导体封装类型。TO-263符合JEDEC标准,其中JEDEC为全球微电子行业标准组织。一种封装的特征在于大致矩形立方体的形状,TO-263在其底侧上具有扁平散热器,并且引线(端子)弯曲以抵靠PCB的表面布置。TO-263封装在其底表面上也具有较大的热平面(thermal plane),其用于与引线一起连接至PCB。
分立功率半导体封装的一个发展方向为更高的可靠性,尤其是对于汽车和航空产品而言。现有TO-263封装设计用于商业应用,但无法通过汽车和航空应用所需的高湿度测试。
TO-263封装符合AEC Q101标准。AEC-Q101为一项全球标准,其定义了汽车应用中使用的分立(有源)电子部件(例如晶体管、二极管、晶闸管)的最小压力测试驱使的要求和条件。AEC Q101就绪型(AEC Q101-ready)封装采用线材键合工艺。线材键合为一种固相焊接工艺,其中两种金属材料(线材和焊盘表面)紧密接触,以形成线材键合。不幸地,线材键合TO-263封装呈现非常低的散热速度。此外,这些封装为单向的,而一些汽车和航空客户需要双向产品。
就这些和其它考虑而言,本改进方案可以有所帮助。
实用新型内容
提供此概述是为了以简化形式介绍将在下文的详细描述中进一步描述的一些概念。本概述不旨在标识所要求保护的主题的关键或必要特征,也不旨在用于帮助确定所要求保护的主题的范围。
根据本公开的分立功率半导体封装的示例性实施例可包括半导体芯片、散热器、第一引线、第二引线和夹片。散热器邻近半导体芯片并从半导体芯片吸走热量。夹片将半导体芯片结合至第一引线和第二引线,并且该夹片包括芯片连结器、第一端子和第二端子。芯片连结器位于半导体芯片的顶部。第一端子连接至第一引线,并且第二端子连接至第二引线。
附图说明
图1A-1C为示出根据示例性实施例的分立功率半导体封装的示意图;
图2A-2C为示出根据示例性实施例在图1A-1C的分立功率半导体封装中使用的散热器的示意图;并且
图3A-3D为示出根据示例性实施例的由图1A-1C的分立功率半导体封装使用的夹片的示意图。
具体实施方式
公开了一种支持瞬态电压抑制半导体装置(比如晶闸管、可控硅整流器和三端双向可控硅开关)的分立功率半导体封装。作为一种TO-263封装的类型,分立功率半导体封装特征在于散热器采用双规引线框设计。散热器包括用于容纳半导体芯片的芯片托盘平台和围绕该散热器的凸缘。芯片托盘平台和凸缘保护芯片以免受潮。分立功率半导体封装特征还在于用于将半导体芯片结合至散热器的夹片。该夹片包括芯片连结器和用于连接至引线框的引线的两个端子。分立功率半导体封装支持单向半导体芯片和双向半导体芯片。
为方便和清楚起见,比如“顶部”、“底部”、“上部”、“下部”、“垂直”、“水平”、“侧向”、“横向”、“径向”、“内部”、“外部”、“左侧”和“右侧”的术语可在本文中用于描述特征和部件的相对放置和定向,每个相对于在本文提供的透视图、分解透视图和截面视图中出现的其他特征和部件的几何形状和定向。所述术语并非旨在限制,包括特别提及的词语、其中的衍生词以及类似含义的词语。
图1A-1C为根据示例性实施例的用于容纳分立半导体的分立功率半导体封装(DPSP)100的代表性示意图。图1A为DPSP 100的侧视图;图1B为不具有封包化合物的DPSP的透视图;而图1C为具有封包化合物的DPSP的透视图。
在示例性实施例中,DPSP 100为TO-263封装的类型。此外,在一些实施例中,DPSP100容纳瞬态电压抑制装置,比如晶闸管。在其他实施例中,DPSP100容纳可控硅整流器(SCR)。在再其他的实施例中,DPSP 100容纳两个背对背(back-to-back)的SCRs,称为三端双向可控硅开关。晶闸管和SCR为单向装置,而三端双向可控硅开关为双向装置。因此,在示例性实施例中,DPSP 100适用于单向半导体装置或双向半导体装置。
DPSP 100的特征在于半导体芯片104、散热器112和夹片120。散热器112被设计用于从半导体芯片104吸走热量,并且其特征在于侧壁128和三个引线(端子)114、116和118。在示例性实施例中,侧壁128设置在DPSP 100的一侧,且三个引线114、116和118设置在第二侧,其中第二侧与侧壁相反。在示例性实施例中,在散热器112的顶部表面上设置有用于安置半导体芯片104的芯片托盘平台106。在示例性实施例中,凸缘110围绕芯片托盘平台106,其中凸缘围绕散热器112。
散热器112、两个引线114、118和端部引线116连结为一体件,因此在本领域中被称为双规引线框设计。在示例性实施例中,散热器112、芯片托盘平台106、侧壁128和引线114、116、118由单一的单体导电材料形成,比如铜或铜合金。
除了有助于防止湿气进入半导体芯片104,凸缘110和芯片托盘平台106还有助于将半导体芯片保持在适当位置。在示例性实施例中,芯片托盘平台106略微大于半导体芯片104,并在周向边缘处升高。因此,芯片托盘平台106在半导体芯片104周围提供了一种“栅栏(fence)”,其有助于防止湿气进入芯片。
当DPSP 100位于印刷电路板(PCB)上时,可能存在导致内应力的外应力(比如弯曲或折叠),尤其是在半导体芯片104上。尤其是在恶劣的工作环境中,比如可能出现在汽车应用中,DPSP 100可能遭受机械应力、湿气、灰尘、碎片等的影响。在示例性实施例中,DPSP100的新颖设计保护半导体芯片104免受这些外部机械压力的影响,并降低内应力。
除了散热器112、芯片托盘平台106和侧壁128之外,双规引线框设计进一步包括第一引线114、第二引线116和第三引线118。在示例性实施例中,第二引线116连接至散热器112,而第一引线114和第三引线118(second lead 118)与散热器分离,然而这仍是双规引线框设计的一部分。双规引线框设计的选定元件,包括集成散热器112、芯片托盘平台106和三根引线114、116和118,将在下文的图2A-2C中进行了更详细地描述和示出。
在示例性实施例中,DPSP 100进一步包括设置在半导体芯片104上的夹片120,该夹片将半导体芯片保持在适当位置。此外,夹片120与散热器112的引线114和118接合,以在它们之间建立电连接。大致地,夹片120包括芯片连结器122、第一夹片端子124和第二夹片端子126。芯片连结器122为夹片120的设置在半导体芯片104上的一部分。在示例性实施例中,芯片连结器122在形状上基本上为矩形,并且覆盖半导体芯片104的大部分,然而半导体芯片的一些部分在芯片连结器的边缘处可见。换句话说,夹片120的芯片连结器122具有第一表面面积,而半导体芯片104具有第二表面面积,其中第二表面积略微大于第一表面面积。
第一夹片端子124和第二夹片端子设置在芯片连结器122的相对侧。在示例性实施例中,第一夹片端子124为第二夹片端子126的镜像。在示例性实施例中,芯片连结器122、夹片120的第一夹片端子124和第二夹片端子126由单一的单体导电材料形成,比如铜或铜合金。
第一夹片端子124设计为与散热器112的第一引线114连接,而第二夹片端子126设计为与散热器的第三引线118连接。由于第一引线114和第三引线118在其端部处未连接至散热器112,因此夹片120,或者更准确地说,第一夹片端子124和第二夹片端子126分别在第一引线118和第三引线118之间建立连接,使得引线连接至散热器112。在下文的图3A-3D中更详细地描述和示出了夹片120。
在示例性实施例中,如图1A和图1C所示,DPSP 100的内部结构被封包在化合物102中,比如环氧复合物。此外,在示例性实施例中,DPSP 100的部件使用焊膏彼此连接。例如,在半导体芯片104和散热器112之间设置有焊膏。因此,焊膏将沉积在散热器112的顶部表面和半导体芯片104的底部表面上。类似地,焊膏设置在夹片120的芯片连结器122和半导体芯片104之间。因此,焊膏将沉积在半导体芯片104的顶部表面和芯片连结器122的底部表面上。此外,焊膏将沉积在夹片120的第一夹片端子124和第二夹片端子126与散热器112的相应引线114、118之间。因此,焊膏将沉积在第一引线114的顶部表面和第一夹片端子124的底部表面上,并且焊膏将沉积在第三引线118的顶部表面和第二夹片端子126的底部表面上。
图2A-2C为根据示例性实施例的在图1A-1C的DPSP 100中使用的双规引线框设计的一些元件的代表性示意图。图2A为散热器112的俯视图,图2B为其侧视图,且图2C为其的透视图。如上所述,散热器112包括侧壁128,芯片托盘平台106设置在散热器上方,以用于保持半导体104(未示出),其中凸缘110围绕散热器。
在示例性实施例中,散热器112的特征在于保护凹口202和204,其设置在散热器和芯片托盘平台106的两侧,并邻近侧壁128。保护凹口202和204有助于在制造期间的模制过程中保持化合物102,从而避免散热器112和化合物材料(例如,环氧复合物)之间的分层。此外,当环氧复合物化合物102沉积在DPSP100的部件上时,保护凹口202和204能够产生机械连结力,以允许从底部保持DPSP。
此外,在示例性实施例中,引线114、116和118被策略性地设计为使得DPSP100能够被表面安装式地附接至PCB。在示例性实施例中,引线114和118相同,并且每个都由几个部段组成。如图2A和图2C所示,引线114的特征在于,依次为:端部208、曲面210、平坦部分212、竖直部分214和连接部分216。引线118的特征在于,依次为:端部228、曲面230、平坦部分232、竖直部分234和连接部分236。引线114的端部208焊接至夹片120的第一夹片端子124上(图1B);类似地,引线118的端部228焊接至夹片的第二夹片端子126。
在示例性实施例中,引线114的连接部分216为平坦的,并与散热器112处于同一平面;因此,连接部分将焊接至PCB(未示出)上。类似地,引线118的连接部分236为平坦的,并与散热器112处于同一平面;因此,连接部分将焊接至PCB上。此外,如图2A所示,引线118的平坦部分232具有第一宽度w1,并且连接部分236具有宽度w2;类似地,在示例性实施例中(w1>w2),引线114的平坦部分212具有宽度w1,并且连接部分216具有宽度w2,其中宽度w1大于宽度w2。在示例性实施例中,连接部分216和236与同一芯片电极连接。
主要对于该设计中的工艺使用,第二引线116也由多个部段组成,依次为:连接器218、曲面220和端部222。在示例性实施例中,连接器218直接连接至散热器112。在示例性实施例中,第二引线116的曲面形状提供了用于使热量从半导体芯片104消散的机制(图1B)。
图3A-3D为根据示例性实施例的由图1A-1C的DPSP 100使用的夹片120的代表性示意图。图3A为夹片120的俯视图,图3B-3D为其透视图。如已示出的,夹片120的特征在于芯片连结器122以及第一夹片端子124和第二夹片端子126,如已经示出的,第一夹片端子124是第二夹片端子126的镜像。
在示例性实施例中,与散热器112的引线114和118类似,示例性夹片120的第一夹片端子124和第二夹片端子126各自都具有几个部段。第一夹片端子124的特征在于,依次为,弯曲桥部306、平坦拐角308、弯曲部310、狭窄部分312、平坦部分314和端子316。类似地,第二夹片端子126的特征在于,依次为,弯曲桥部326、平坦拐角328、弯曲部330、狭窄部分332、平坦部分334和端子336。弯曲桥部306将第一夹片端子124连接至芯片连结器122;类似地,弯曲桥部326将第二夹片端子126连接至芯片连结器。
此外,在示例性实施例中,第一夹片端子124的端子316将焊接至散热器112的第一引线114,而第二夹片端子126的端子336将焊接至散热器的第三引线118。焊接材料放置在每个端子316和336的底部表面以及引线114和118的相应端部208和228的顶部表面上。在示例性实施例中,散热器112的引线114、118和夹片120的夹片端子124、126有助于离开半导体芯片104的热传递。此外,在示例性实施例中,引线114、118和夹片端子124、126易于制造。
在示例性实施例中,第一夹片端子124的特征在于,内部加工条318和外部加工条320。类似地,第二夹片端子126的特征在于,内部加工条338和外部加工条340。内部加工条318和338以及外部加工条320和340是加工支撑条。
如图3C和图3D所示,芯片120的第一夹片端子124和第二夹片端子126的部段占据不同平面。芯片连结器122占据第一平面,平坦拐角308和328占据从第一平面略微升高的第二平面,并且狭窄部分312、平坦部分314、狭窄部分332和平坦部分334占据从第二平面升高的第三平面。因此,当芯片连结器122焊接至半导体芯片104时(图1B),第一夹片端子124和第二夹片端子126设置在半导体芯片的远侧。在示例性实施例中,虽然散热器112设计为从半导体芯片104吸走热量,但夹片120的设计也有助于最小化在半导体芯片上积聚的热量。
此外,在示例性实施例中,夹片120提供了对现有技术TO-263封装的线材键合的实践的替代方案。线材键合的分立功率半导体封装无法更好地散热。通过在DPSP 100上使用夹片120,而不执行线材键合。因此,在示例性实施例中,DPSP 100散热比现有技术的分立功率半导体封装快得多。
此外,在一些实施例中,通过将夹片120与两个引线114和118连结,DPSP100比现有技术的分立功率半导体封装具有更好的产品可靠性。此外,在一些实施例中,DPSP 100可支持单向半导体芯片,比如晶闸管和可控硅整流器(SCR)。此外,在示例性实施例中,DPSP 100可支持双向半导体芯片,比如三端双向可控硅开关(两个背对背的SCR)。因此,在示例性实施例中,DPSP 100适用于单向或双向半导体装置。
如本文所使用的,以单数形式叙述并以单词“一”或“一个”开头的元件或步骤应理解为不排除多个元件或步骤,除非明确叙述了这种排除。此外,对本公开的“一个实施例”的引用不旨在被解释为排除也包含所述特征的额外实施例的存在。
虽然本公开参考了某些实施例,但是在不脱离如所附权利要求中定义的本公开的领域和范围的情况下,可对所描述的实施例的许多修改、变更和改变。因此,本公开不限于所描述的实施例,而是具有由所附权利要求及其等同物的语言定义的全部范围。
Claims (20)
1.一种分立功率半导体封装,其特征在于,包括:
半导体芯片;
散热器,所述散热器邻近所述半导体芯片设置,并且所述散热器从所述半导体芯片吸走热量;
第一引线;
第二引线;以及
夹片,所述夹片将所述半导体芯片结合至所述第一引线和第二引线,所述夹片包括:
芯片连结器,所述芯片连结器设置在所述半导体芯片的顶部;
第一端子,所述第一端子联接至所述第一引线;以及
第二端子,所述第二端子联接至所述第二引线。
2.根据权利要求1所述的分立功率半导体封装,其特征在于,所述散热器进一步包括芯片托盘平台,其中,所述半导体芯片被放置在所述芯片托盘平台中。
3.根据权利要求2所述的分立功率半导体封装,其特征在于,所述散热器是双规引线框的一部分。
4.根据权利要求2所述的分立功率半导体封装,其特征在于,进一步包括围绕所述散热器周向地设置的凸缘。
5.根据权利要求4所述的分立功率半导体封装,其特征在于,所述凸缘和所述芯片托盘平台保护所述半导体芯片免受湿气影响。
6.根据权利要求1所述的分立功率半导体封装,其特征在于,所述散热器进一步包括第三引线。
7.根据权利要求6所述的分立功率半导体封装,其特征在于,所述第三引线联接至所述散热器。
8.根据权利要求6所述的分立功率半导体封装,其特征在于,所述第一引线和所述第三引线将使用表面安装技术连接至印刷电路板。
9.根据权利要求1所述的分立功率半导体封装,其特征在于,所述第一端子进一步包括:
弯曲桥部,所述弯曲桥部联接至所述芯片连结器的一侧;
平坦拐角,所述平坦拐角联接至所述弯曲桥部;
弯曲部,所述弯曲部联接至所述平坦拐角;以及
平坦部分,所述平坦部分联接至所述弯曲部。
10.根据权利要求9所述的分立功率半导体封装,其特征在于,所述芯片连结器在第一平面中,所述平坦拐角在第二平面中,并且所述平坦部分在第三平面中。
11.根据权利要求10所述的分立功率半导体封装,其特征在于,所述第一平面与所述第二平面不共面,所述第一平面与所述第三平面不共面,并且所述第二平面与所述第三平面不共面。
12.根据权利要求10所述的分立功率半导体封装,其特征在于,所述第二平面相对于所述第一平面升高。
13.根据权利要求12所述的分立功率半导体封装,其特征在于,所述第三平面相对于所述第二平面升高。
14.根据权利要求1所述的分立功率半导体封装,其特征在于,所述散热器进一步包括第一保护凹口和第二保护凹口。
15.根据权利要求14所述的分立功率半导体封装,其特征在于,所述第一保护凹口位于所述散热器的第一侧,并且所述第二保护凹口位于所述散热器的第二侧。
16.根据权利要求15所述的分立功率半导体封装,其特征在于,所述散热器进一步包括邻近所述半导体芯片的侧壁。
17.根据权利要求16所述的分立功率半导体封装,其特征在于,所述第一保护凹口和所述第二保护凹口邻近所述侧壁。
18.根据权利要求17所述的分立功率半导体封装,其特征在于,所述第一保护凹口和所述第二保护凹口便于对所述分立功率半导体封装的处理。
19.根据权利要求6所述的分立功率半导体封装,其特征在于,所述第一引线进一步包括:
联接至所述第一端子的端部;以及
使用表面安装技术附接至印刷电路板的连接部分。
20.根据权利要求6所述的分立功率半导体封装,其特征在于,所述第二引线进一步包括:
将联接至所述第二端子的端部;以及
使用表面安装技术附接至印刷电路板的连接部分。
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