CN105122457B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN105122457B
CN105122457B CN201480019129.5A CN201480019129A CN105122457B CN 105122457 B CN105122457 B CN 105122457B CN 201480019129 A CN201480019129 A CN 201480019129A CN 105122457 B CN105122457 B CN 105122457B
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layer
semiconductor device
conductivity type
diffusion region
gate
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CN105122457A (zh
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宫腰宣树
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201480019129.5A 2013-03-31 2014-03-31 半导体装置 Active CN105122457B (zh)

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JP2013059785 2013-03-31
JPPCT/JP2013/059785 2013-03-31
PCT/JP2014/059599 WO2014163060A1 (ja) 2013-03-31 2014-03-31 半導体装置

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CN105122457B true CN105122457B (zh) 2017-11-17

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US (2) US9960267B2 (enExample)
JP (3) JP5841693B2 (enExample)
CN (2) CN105122457B (enExample)
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WO (2) WO2014163058A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105122457B (zh) * 2013-03-31 2017-11-17 新电元工业株式会社 半导体装置
WO2015096605A1 (zh) * 2013-12-23 2015-07-02 梁嘉进 分裂栅功率半导体场效应晶体管
JP6185440B2 (ja) * 2014-09-16 2017-08-23 株式会社東芝 半導体装置
CN104282738A (zh) * 2014-10-29 2015-01-14 深圳市可易亚半导体科技有限公司 可减少功率器件导通电阻的栅极衬垫结构
JP6513932B2 (ja) * 2014-11-17 2019-05-15 トヨタ自動車株式会社 半導体装置
JP6600475B2 (ja) * 2015-03-27 2019-10-30 ローム株式会社 半導体装置
US10367085B2 (en) * 2015-08-31 2019-07-30 Littelfuse, Inc. IGBT with waved floating P-Well electron injection
US9780202B2 (en) * 2015-08-31 2017-10-03 Ixys Corporation Trench IGBT with waved floating P-well electron injection
JP6677613B2 (ja) * 2016-09-15 2020-04-08 株式会社東芝 半導体装置
JP6844228B2 (ja) * 2016-12-02 2021-03-17 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6854654B2 (ja) 2017-01-26 2021-04-07 ローム株式会社 半導体装置
US10269951B2 (en) * 2017-05-16 2019-04-23 General Electric Company Semiconductor device layout and method for forming same
US10930730B2 (en) * 2017-07-18 2021-02-23 Qualcomm Incorporated Enhanced active and passive devices for radio frequency (RF) process and design technology
US11342435B2 (en) * 2017-12-14 2022-05-24 Shindengen Electric Manufacturing Co., Ltd. Wide-gap semiconductor device
JP7190256B2 (ja) 2018-02-09 2022-12-15 ローム株式会社 半導体装置
JP2019145646A (ja) * 2018-02-20 2019-08-29 株式会社東芝 半導体装置
US11309415B2 (en) * 2018-03-29 2022-04-19 Shindengen Electric Manufacturing Co., Ltd. Wide gap semiconductor device
JP7155641B2 (ja) * 2018-06-14 2022-10-19 富士電機株式会社 半導体装置
CN109244134A (zh) * 2018-09-04 2019-01-18 深圳市南硕明泰科技有限公司 一种场效应晶体管及其制备方法
CN109244141A (zh) * 2018-09-29 2019-01-18 深圳市心版图科技有限公司 一种半导体器件及其制备方法
US10957759B2 (en) * 2018-12-21 2021-03-23 General Electric Company Systems and methods for termination in silicon carbide charge balance power devices
US11101375B2 (en) * 2019-03-19 2021-08-24 Kabushiki Kaisha Toshiba Semiconductor device and method of controlling same
CN111653564B (zh) * 2020-03-30 2023-03-31 厦门市三安集成电路有限公司 一种内建低频振荡抑制电路的晶体管
JP7638156B2 (ja) * 2021-05-26 2025-03-03 新電元工業株式会社 半導体装置
JP7582113B2 (ja) * 2021-08-03 2024-11-13 株式会社デンソー 半導体装置およびその製造方法
CN114039219A (zh) * 2022-01-10 2022-02-11 珠海华萃科技有限公司 一种电子元器件焊锡用防漂移结构
CN115207092B (zh) * 2022-09-09 2022-12-13 深圳芯能半导体技术有限公司 一种高可靠性的沟槽侧壁栅碳化硅mosfet及其制备方法
CN116632035A (zh) * 2023-04-25 2023-08-22 海信家电集团股份有限公司 半导体装置及其制作方法
WO2025143235A1 (ja) * 2023-12-27 2025-07-03 ローム株式会社 半導体装置
CN120282532A (zh) * 2024-10-17 2025-07-08 湖南三安半导体有限责任公司 半导体器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1794451A (zh) * 2004-11-15 2006-06-28 三洋电机株式会社 半导体装置及其制造方法
CN101071825A (zh) * 2006-05-10 2007-11-14 三洋电机株式会社 绝缘栅极型半导体装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940008225B1 (ko) * 1991-08-22 1994-09-08 삼성전자 주식회사 전력스위칭용모스트랜지스터
JP3185292B2 (ja) * 1991-12-12 2001-07-09 関西日本電気株式会社 半導体装置
FR2768858B1 (fr) 1997-09-22 2001-10-12 Sgs Thomson Microelectronics Structure de plot de grille d'un transistor vertical de type mos ou igbt
JP4785334B2 (ja) * 2001-01-19 2011-10-05 三菱電機株式会社 半導体装置
DE10205345B9 (de) * 2001-02-09 2007-12-20 Fuji Electric Co., Ltd., Kawasaki Halbleiterbauelement
GB0126215D0 (en) * 2001-11-01 2002-01-02 Koninkl Philips Electronics Nv Field effect transistor on insulating layer and manufacturing method
JP4126915B2 (ja) * 2002-01-30 2008-07-30 富士電機デバイステクノロジー株式会社 半導体装置
JP4764998B2 (ja) * 2003-11-14 2011-09-07 富士電機株式会社 半導体装置
JP3689420B1 (ja) 2004-03-29 2005-08-31 新電元工業株式会社 半導体装置
US20060273379A1 (en) * 2005-06-06 2006-12-07 Alpha & Omega Semiconductor, Ltd. MOSFET using gate work function engineering for switching applications
JP5511124B2 (ja) * 2006-09-28 2014-06-04 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
JP5315058B2 (ja) 2006-12-07 2013-10-16 新電元工業株式会社 半導体装置及びその製造方法
US8304829B2 (en) * 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
DE112010000882B4 (de) * 2009-02-24 2015-03-19 Mitsubishi Electric Corporation Siliziumkarbid-Halbleitervorrichtung
US8492836B2 (en) 2009-10-14 2013-07-23 Mitsubishi Electric Corporation Power semiconductor device
JP2011228643A (ja) 2010-03-30 2011-11-10 Shindengen Electric Mfg Co Ltd 半導体装置及びその製造方法
JP5569162B2 (ja) * 2010-06-10 2014-08-13 富士電機株式会社 半導体装置および半導体装置の製造方法
EP2421046A1 (en) 2010-08-16 2012-02-22 Nxp B.V. MOSFET having a capacitance control region
JP5665567B2 (ja) * 2011-01-26 2015-02-04 株式会社東芝 半導体素子
JP6029411B2 (ja) * 2012-10-02 2016-11-24 三菱電機株式会社 半導体装置
US9105713B2 (en) * 2012-11-09 2015-08-11 Infineon Technologies Austria Ag Semiconductor device with metal-filled groove in polysilicon gate electrode
JP6083464B2 (ja) * 2013-03-14 2017-02-22 富士電機株式会社 半導体装置
CN105122457B (zh) * 2013-03-31 2017-11-17 新电元工业株式会社 半导体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1794451A (zh) * 2004-11-15 2006-06-28 三洋电机株式会社 半导体装置及其制造方法
CN101071825A (zh) * 2006-05-10 2007-11-14 三洋电机株式会社 绝缘栅极型半导体装置

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JPWO2014163060A1 (ja) 2017-02-16
JP6177300B2 (ja) 2017-08-09
JP5719976B2 (ja) 2015-05-20
US20150325691A1 (en) 2015-11-12
CN105122457A (zh) 2015-12-02
NL2014502A (en) 2016-03-08
JPWO2014163058A1 (ja) 2017-02-16
CN105103298B (zh) 2019-01-01
WO2014163060A1 (ja) 2014-10-09
US9287393B2 (en) 2016-03-15
NL2014503B1 (en) 2016-07-25
US20150349114A1 (en) 2015-12-03
NL2014503A (en) 2016-01-20
US9960267B2 (en) 2018-05-01
JP2016027675A (ja) 2016-02-18
JP5841693B2 (ja) 2016-01-13
CN105103298A (zh) 2015-11-25
NL2014502B1 (en) 2016-07-25
WO2014163058A1 (ja) 2014-10-09

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