CN103765494B - 显示装置及其制造方法 - Google Patents

显示装置及其制造方法 Download PDF

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Publication number
CN103765494B
CN103765494B CN201280041110.1A CN201280041110A CN103765494B CN 103765494 B CN103765494 B CN 103765494B CN 201280041110 A CN201280041110 A CN 201280041110A CN 103765494 B CN103765494 B CN 103765494B
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tft
active layer
channel
electrode
drain electrode
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CN103765494A (zh
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宫本忠芳
中野文树
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN201280041110.1A 2011-06-24 2012-06-18 显示装置及其制造方法 Active CN103765494B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011140300 2011-06-24
JP2011-140300 2011-06-24
PCT/JP2012/003960 WO2012176422A1 (ja) 2011-06-24 2012-06-18 表示装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN103765494A CN103765494A (zh) 2014-04-30
CN103765494B true CN103765494B (zh) 2016-05-04

Family

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CN201280041110.1A Active CN103765494B (zh) 2011-06-24 2012-06-18 显示装置及其制造方法

Country Status (6)

Country Link
US (2) US10177170B2 (cg-RX-API-DMAC10.html)
JP (2) JP6215053B2 (cg-RX-API-DMAC10.html)
CN (1) CN103765494B (cg-RX-API-DMAC10.html)
CA (1) CA2845768A1 (cg-RX-API-DMAC10.html)
SG (2) SG2014013833A (cg-RX-API-DMAC10.html)
WO (1) WO2012176422A1 (cg-RX-API-DMAC10.html)

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JP7250558B2 (ja) 2019-02-19 2023-04-03 株式会社ジャパンディスプレイ 表示装置及び半導体装置
JP7370375B2 (ja) * 2019-03-11 2023-10-27 株式会社ジャパンディスプレイ 表示装置及び半導体装置
JP7464400B2 (ja) * 2019-06-14 2024-04-09 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 薄膜デバイス
CN110289269A (zh) * 2019-06-26 2019-09-27 上海天马微电子有限公司 一种阵列基板、显示面板和显示装置
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US20190096922A1 (en) 2019-03-28
CA2845768A1 (en) 2012-12-27
JP2016194703A (ja) 2016-11-17
US20140131703A1 (en) 2014-05-15
JPWO2012176422A1 (ja) 2015-02-23
SG2014013833A (en) 2014-10-30
SG10201605237SA (en) 2016-08-30
WO2012176422A1 (ja) 2012-12-27
US10438973B2 (en) 2019-10-08
JP6215053B2 (ja) 2017-10-18
US10177170B2 (en) 2019-01-08
CN103765494A (zh) 2014-04-30

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