CN102150246B - 贯通电极基板及其制造方法和使用贯通电极基板的半导体装置 - Google Patents
贯通电极基板及其制造方法和使用贯通电极基板的半导体装置 Download PDFInfo
- Publication number
- CN102150246B CN102150246B CN200980130037.3A CN200980130037A CN102150246B CN 102150246 B CN102150246 B CN 102150246B CN 200980130037 A CN200980130037 A CN 200980130037A CN 102150246 B CN102150246 B CN 102150246B
- Authority
- CN
- China
- Prior art keywords
- electrode substrate
- substrate
- area
- hole
- metal material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/17181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1492—Periodical treatments, e.g. pulse plating of through-holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
- H05K3/426—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in substrates without metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
- H05K3/445—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits having insulated holes or insulated via connections through the metal core
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Wire Bonding (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510085056.6A CN104617037B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板的制造方法 |
| CN201510085057.0A CN104681503B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板和使用贯通电极基板的半导体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008267870 | 2008-10-16 | ||
| JP2008-267870 | 2008-10-16 | ||
| JP2009194245A JP5246103B2 (ja) | 2008-10-16 | 2009-08-25 | 貫通電極基板の製造方法 |
| JP2009-194245 | 2009-08-25 | ||
| PCT/JP2009/064886 WO2010044315A1 (ja) | 2008-10-16 | 2009-08-26 | 貫通電極基板及びその製造方法、並びに貫通電極基板を用いた半導体装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510085056.6A Division CN104617037B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板的制造方法 |
| CN201510085057.0A Division CN104681503B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板和使用贯通电极基板的半导体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102150246A CN102150246A (zh) | 2011-08-10 |
| CN102150246B true CN102150246B (zh) | 2015-03-25 |
Family
ID=42106482
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510085056.6A Active CN104617037B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板的制造方法 |
| CN201510085057.0A Active CN104681503B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板和使用贯通电极基板的半导体装置 |
| CN200980130037.3A Active CN102150246B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板及其制造方法和使用贯通电极基板的半导体装置 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510085056.6A Active CN104617037B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板的制造方法 |
| CN201510085057.0A Active CN104681503B (zh) | 2008-10-16 | 2009-08-26 | 贯通电极基板和使用贯通电极基板的半导体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8288772B2 (enExample) |
| JP (1) | JP5246103B2 (enExample) |
| CN (3) | CN104617037B (enExample) |
| WO (1) | WO2010044315A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4735767B2 (ja) * | 2008-10-16 | 2011-07-27 | 大日本印刷株式会社 | 貫通電極基板及び半導体装置 |
| JP5246103B2 (ja) | 2008-10-16 | 2013-07-24 | 大日本印刷株式会社 | 貫通電極基板の製造方法 |
| JP5044685B2 (ja) * | 2010-09-10 | 2012-10-10 | 株式会社東芝 | マイクロプローブ、記録装置、及びマイクロプローブの製造方法 |
| US9018094B2 (en) * | 2011-03-07 | 2015-04-28 | Invensas Corporation | Substrates with through vias with conductive features for connection to integrated circuit elements, and methods for forming through vias in substrates |
| US8587127B2 (en) * | 2011-06-15 | 2013-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structures and methods of forming the same |
| US8487425B2 (en) * | 2011-06-23 | 2013-07-16 | International Business Machines Corporation | Optimized annular copper TSV |
| JP2013077808A (ja) * | 2011-09-16 | 2013-04-25 | Hoya Corp | 基板製造方法および配線基板の製造方法 |
| JP2013077809A (ja) * | 2011-09-16 | 2013-04-25 | Hoya Corp | 基板製造方法および配線基板の製造方法 |
| KR20140011137A (ko) * | 2012-07-17 | 2014-01-28 | 삼성전자주식회사 | Tsv 구조를 구비한 집적회로 소자 및 그 제조 방법 |
| US9263569B2 (en) * | 2013-08-05 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | MISFET device and method of forming the same |
| JP5846185B2 (ja) | 2013-11-21 | 2016-01-20 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
| JP2015153978A (ja) * | 2014-02-18 | 2015-08-24 | キヤノン株式会社 | 貫通配線の作製方法 |
| US10154598B2 (en) * | 2014-10-13 | 2018-12-11 | Rohm And Haas Electronic Materials Llc | Filling through-holes |
| CN108140534B (zh) * | 2015-10-08 | 2020-07-07 | 大日本印刷株式会社 | 检测元件 |
| US9812155B1 (en) | 2015-11-23 | 2017-11-07 | Western Digital (Fremont), Llc | Method and system for fabricating high junction angle read sensors |
| US10508357B2 (en) * | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
| JP2017199854A (ja) | 2016-04-28 | 2017-11-02 | Tdk株式会社 | 貫通配線基板 |
| JP6372546B2 (ja) * | 2016-11-15 | 2018-08-15 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
| WO2019065095A1 (ja) * | 2017-09-26 | 2019-04-04 | 富士フイルム株式会社 | 金属充填微細構造体の製造方法および絶縁性基材 |
| US20210083160A1 (en) * | 2017-12-14 | 2021-03-18 | Osram Opto Semiconductors Gmbh | Semiconductor Device and Method for Producing a Carrier Element Suitable for a Semiconductor Device |
| CN110769616B (zh) * | 2018-07-26 | 2022-08-02 | 健鼎(无锡)电子有限公司 | 电路板结构的制造方法 |
| CN113506849B (zh) * | 2018-12-14 | 2022-07-08 | 新唐科技日本株式会社 | 半导体装置 |
| US11342256B2 (en) | 2019-01-24 | 2022-05-24 | Applied Materials, Inc. | Method of fine redistribution interconnect formation for advanced packaging applications |
| IT201900006736A1 (it) | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di fabbricazione di package |
| IT201900006740A1 (it) | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di strutturazione di substrati |
| US11931855B2 (en) | 2019-06-17 | 2024-03-19 | Applied Materials, Inc. | Planarization methods for packaging substrates |
| US11862546B2 (en) | 2019-11-27 | 2024-01-02 | Applied Materials, Inc. | Package core assembly and fabrication methods |
| US11257790B2 (en) | 2020-03-10 | 2022-02-22 | Applied Materials, Inc. | High connectivity device stacking |
| US11454884B2 (en) | 2020-04-15 | 2022-09-27 | Applied Materials, Inc. | Fluoropolymer stamp fabrication method |
| US11400545B2 (en) | 2020-05-11 | 2022-08-02 | Applied Materials, Inc. | Laser ablation for package fabrication |
| US11232951B1 (en) | 2020-07-14 | 2022-01-25 | Applied Materials, Inc. | Method and apparatus for laser drilling blind vias |
| US11676832B2 (en) | 2020-07-24 | 2023-06-13 | Applied Materials, Inc. | Laser ablation system for package fabrication |
| CN112739068A (zh) * | 2020-11-12 | 2021-04-30 | 福莱盈电子股份有限公司 | 一种线路板通孔的填孔方法 |
| US11521937B2 (en) | 2020-11-16 | 2022-12-06 | Applied Materials, Inc. | Package structures with built-in EMI shielding |
| US11404318B2 (en) | 2020-11-20 | 2022-08-02 | Applied Materials, Inc. | Methods of forming through-silicon vias in substrates for advanced packaging |
| US11705365B2 (en) | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
| CN115835530A (zh) * | 2021-09-17 | 2023-03-21 | 无锡深南电路有限公司 | 一种电路板的加工方法及电路板 |
| US12183684B2 (en) | 2021-10-26 | 2024-12-31 | Applied Materials, Inc. | Semiconductor device packaging methods |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1402608A (zh) * | 2001-08-08 | 2003-03-12 | 株式会社丰田自动织机 | 通路孔镀铜的方法 |
| CN1977365A (zh) * | 2004-07-06 | 2007-06-06 | 东京毅力科创株式会社 | 贯通基板、内插器以及贯通基板的制造方法 |
| TW200733143A (en) * | 2006-01-23 | 2007-09-01 | Hitachi Metals Ltd | Conductor paste, multilayer ceramic substrate and fabrication method of multilayer ceramic substrate |
| CN101066004A (zh) * | 2004-11-24 | 2007-10-31 | 大日本印刷株式会社 | 具有被导电材料填充的通孔的基板的制造方法 |
| WO2008120755A1 (ja) * | 2007-03-30 | 2008-10-09 | Nec Corporation | 機能素子内蔵回路基板及びその製造方法、並びに電子機器 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0782041A (ja) * | 1993-06-30 | 1995-03-28 | Tdk Corp | 多層セラミック部品の製造方法および多層セラミック部品 |
| JP3033574B1 (ja) | 1999-02-15 | 2000-04-17 | 日本電気株式会社 | 研磨方法 |
| JP2000349198A (ja) * | 1999-04-02 | 2000-12-15 | Nitto Denko Corp | チップサイズパッケージ用インターポーザ及びその製造方法と中間部材 |
| JP4780857B2 (ja) | 2001-05-31 | 2011-09-28 | 京セラ株式会社 | 配線基板の製造方法 |
| JP2003110241A (ja) * | 2001-09-28 | 2003-04-11 | Kyocera Corp | 配線基板およびこれを用いた電子装置 |
| WO2003033775A1 (en) | 2001-10-16 | 2003-04-24 | Shinko Electric Industries Co., Ltd. | Method of copper-plating small-diameter holes |
| US6818464B2 (en) * | 2001-10-17 | 2004-11-16 | Hymite A/S | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
| JP2003213489A (ja) * | 2002-01-15 | 2003-07-30 | Learonal Japan Inc | ビアフィリング方法 |
| JP4063619B2 (ja) | 2002-03-13 | 2008-03-19 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
| SG111972A1 (en) * | 2002-10-17 | 2005-06-29 | Agency Science Tech & Res | Wafer-level package for micro-electro-mechanical systems |
| JP2005019577A (ja) * | 2003-06-25 | 2005-01-20 | Hitachi Cable Ltd | 半導体装置用テープキャリアの製造方法 |
| JP2005045046A (ja) * | 2003-07-23 | 2005-02-17 | Mitsubishi Gas Chem Co Inc | 多層プリント配線板の製造方法 |
| KR100826068B1 (ko) | 2003-09-09 | 2008-04-29 | 호야 가부시키가이샤 | 양면 배선 글래스 기판의 제조 방법 |
| JP4634735B2 (ja) * | 2004-04-20 | 2011-02-16 | 大日本印刷株式会社 | 多層配線基板の製造方法 |
| JP4660119B2 (ja) * | 2004-05-26 | 2011-03-30 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100594716B1 (ko) * | 2004-07-27 | 2006-06-30 | 삼성전자주식회사 | 공동부를 구비한 캡 웨이퍼, 이를 이용한 반도체 칩, 및그 제조방법 |
| JP2006054307A (ja) * | 2004-08-11 | 2006-02-23 | Shinko Electric Ind Co Ltd | 基板の製造方法 |
| JP3987521B2 (ja) * | 2004-11-08 | 2007-10-10 | 新光電気工業株式会社 | 基板の製造方法 |
| JP4564342B2 (ja) | 2004-11-24 | 2010-10-20 | 大日本印刷株式会社 | 多層配線基板およびその製造方法 |
| JPWO2006070652A1 (ja) | 2004-12-27 | 2008-06-12 | 日本電気株式会社 | 半導体装置およびその製造方法と、配線基板およびその製造方法と、半導体パッケージ並びに電子機器 |
| KR100632552B1 (ko) * | 2004-12-30 | 2006-10-11 | 삼성전기주식회사 | 내부 비아홀의 필 도금 구조 및 그 제조 방법 |
| JP4456027B2 (ja) * | 2005-03-25 | 2010-04-28 | Okiセミコンダクタ株式会社 | 貫通導電体の製造方法 |
| JP2006339483A (ja) * | 2005-06-03 | 2006-12-14 | Toppan Printing Co Ltd | 配線基板の製造方法及び配線基板 |
| JP2007095743A (ja) | 2005-09-27 | 2007-04-12 | Matsushita Electric Works Ltd | 貫通孔配線及びその製造方法 |
| KR100783467B1 (ko) * | 2006-02-24 | 2007-12-07 | 삼성전기주식회사 | 내부 관통홀을 가지는 인쇄회로기판 및 그 제조 방법 |
| JP2007246194A (ja) | 2006-03-14 | 2007-09-27 | Toshiba Elevator Co Ltd | マシンルームレスエレベータ |
| US7910837B2 (en) * | 2007-08-10 | 2011-03-22 | Napra Co., Ltd. | Circuit board, electronic device and method for manufacturing the same |
| JP5428280B2 (ja) | 2008-10-16 | 2014-02-26 | 大日本印刷株式会社 | 貫通電極基板及び貫通電極基板を用いた半導体装置 |
| JP5246103B2 (ja) | 2008-10-16 | 2013-07-24 | 大日本印刷株式会社 | 貫通電極基板の製造方法 |
-
2009
- 2009-08-25 JP JP2009194245A patent/JP5246103B2/ja active Active
- 2009-08-26 WO PCT/JP2009/064886 patent/WO2010044315A1/ja not_active Ceased
- 2009-08-26 CN CN201510085056.6A patent/CN104617037B/zh active Active
- 2009-08-26 CN CN201510085057.0A patent/CN104681503B/zh active Active
- 2009-08-26 CN CN200980130037.3A patent/CN102150246B/zh active Active
-
2010
- 2010-08-12 US US12/855,266 patent/US8288772B2/en active Active
-
2012
- 2012-09-07 US US13/607,011 patent/US8637397B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1402608A (zh) * | 2001-08-08 | 2003-03-12 | 株式会社丰田自动织机 | 通路孔镀铜的方法 |
| CN1977365A (zh) * | 2004-07-06 | 2007-06-06 | 东京毅力科创株式会社 | 贯通基板、内插器以及贯通基板的制造方法 |
| CN101066004A (zh) * | 2004-11-24 | 2007-10-31 | 大日本印刷株式会社 | 具有被导电材料填充的通孔的基板的制造方法 |
| TW200733143A (en) * | 2006-01-23 | 2007-09-01 | Hitachi Metals Ltd | Conductor paste, multilayer ceramic substrate and fabrication method of multilayer ceramic substrate |
| WO2008120755A1 (ja) * | 2007-03-30 | 2008-10-09 | Nec Corporation | 機能素子内蔵回路基板及びその製造方法、並びに電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010118645A (ja) | 2010-05-27 |
| US20110062594A1 (en) | 2011-03-17 |
| US20120329276A1 (en) | 2012-12-27 |
| CN104617037B (zh) | 2018-04-24 |
| CN102150246A (zh) | 2011-08-10 |
| US8637397B2 (en) | 2014-01-28 |
| US8288772B2 (en) | 2012-10-16 |
| CN104681503A (zh) | 2015-06-03 |
| CN104617037A (zh) | 2015-05-13 |
| CN104681503B (zh) | 2017-10-03 |
| JP5246103B2 (ja) | 2013-07-24 |
| WO2010044315A1 (ja) | 2010-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102150246B (zh) | 贯通电极基板及其制造方法和使用贯通电极基板的半导体装置 | |
| JP5664641B2 (ja) | 貫通電極基板の製造方法 | |
| US11901281B2 (en) | Bonded structures with integrated passive component | |
| US7112472B2 (en) | Methods of fabricating a composite carbon nanotube thermal interface device | |
| US8474126B2 (en) | Manufacturing method of semiconductor device | |
| JP7007285B2 (ja) | ナノ構造体のエネルギー貯蔵装置を有するインターポーザ | |
| US20100233359A1 (en) | Method for manufacturing capacitor embedded in interposer | |
| JP2004056145A (ja) | シリコン・ウェハ上に作製されセラミック基板に接合されたインターポーザ・コンデンサ | |
| US11302618B2 (en) | Microelectronic assemblies having substrate-integrated perovskite layers | |
| JP2016072433A (ja) | 貫通電極基板及びその製造方法 | |
| JP2017098402A (ja) | 貫通電極基板及びその製造方法 | |
| JP2023120327A (ja) | キャパシタ内蔵部品及びキャパシタ内蔵部品を備える実装基板並びにキャパシタ内蔵部品の製造方法 | |
| JP6561635B2 (ja) | 貫通電極基板及びその製造方法 | |
| JP5428280B2 (ja) | 貫通電極基板及び貫通電極基板を用いた半導体装置 | |
| JP6163833B2 (ja) | 電子部品、電子部品の製造方法、電子機器および移動体 | |
| JP6446934B2 (ja) | 導電材スルーホール基板及びその製造方法 | |
| JP2018195661A (ja) | 貫通電極基板、貫通電極基板の製造方法及び貫通電極基板を用いた半導体装置 | |
| CN116344517A (zh) | 衬底内的电耦合沟槽电容器 | |
| WO2022092129A1 (ja) | 配線基板、電子装置及び電子モジュール | |
| JP6672705B2 (ja) | インターポーザ及びインターポーザの製造方法 | |
| JP6658846B2 (ja) | 貫通電極基板 | |
| JP2016167491A (ja) | 貫通配線基板の製造方法 | |
| CN211265463U (zh) | 一种半导体装置 | |
| JP2017041558A (ja) | 貫通電極基板及びその製造方法 | |
| CN117673018A (zh) | 嵌入式迹线衬底组合件及相关微电子装置组合件、电子系统及工艺 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |