CN102142357B - 等离子处理装置 - Google Patents
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- 238000009832 plasma treatment Methods 0.000 claims description 25
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Abstract
本发明提供一种等离子处理装置。与以往相比能提高处理的面内均匀性,并能削减处理腔室内无用的空间而谋求装置的小型化,而且能容易地改变上部电极和下部电极的间隔。该等离子处理装置包括:上部电极,其与下部电极相对地设置于处理腔室内,自设置于相对面的多个气体喷出孔供给气体,且能够上下运动;盖体,其设置于上部电极的上侧并气密地闭塞处理腔室的上部开口;多个排气孔,其形成于相对面;环状构件,其沿上部电极的周缘部设置,能与上部电极连动地上下移动,在其下降位置形成由环状构件、下部电极和上部电极围成的处理空间;多个环状构件气体喷出孔,其开口于环状构件的内壁部分;多个环状构件排气孔,其开口于环状构件的内壁部分。
Description
技术领域
本发明涉及一种等离子处理装置。
背景技术
以往在半导体装置的制造领域等中,为了以喷淋状向半导体晶圆等基板供给气体而使用簇射头。即,例如在对半导体晶圆等基板实施等离子蚀刻处理的等离子处理装置中,在处理腔室内设置有用于载置基板的载置台,并与此载置台相对地设置有簇射头。在该簇射头的与载置台相对的相对面上设置有多个气体喷出孔,自这些气体喷出孔以喷淋状朝向基板供给气体。
在上述等离子处理装置中,为了使处理腔室内的气体流动均匀化,公知有一种自载置台的周围向下方排气的构造。为了提高等离子处理的面内均匀性,还公知有一种等离子处理装置,该等离子处理装置除上述簇射头之外还在载置台的基板的周围部分设置有向基板供给气体的气体喷出部(例如,参照专利文献1)。还公知有一种自簇射头的周围向处理腔室的上方排气的等离子处理装置(例如,参照专利文献2)。另外,还公知有一种能够使作为上部电极的簇射头上下移动而改变其与作为下部电极的载置台的间隔的等离子处理装置(例如,参照专利文献3)。
专利文献1:日本特开2006-344701公报
专利文献2:日本专利第2662365号公报
专利文献3:日本特开2005-93843号公报
在上述的以往技术中,采用如下结构:或者自载置台(基板)的周围向处理腔室的下方排气,或者自簇射头的周围向处理腔室的上方排气。因此,存在的问题在于,形成有自簇射头供给来的气体从基板的中央部朝向周边部流动的气流,从而在基板的中央部和周边部的处理的状态容易产生差异,处理的面内均匀性下降。并且,因为需要在载置台(基板)的周围和簇射头的周围设置排气流路,所以处理腔室内部的容积比其收容的基板大得多,无用的空间变多,很难谋求整个装置的小型化。
并且,还存在如下问题:在簇射头兼作上部电极、载置台兼作下部电极的电容耦合型的等离子处理装置中,期望能够改变该上部电极(簇射头)和下部电极(载置台)的间隔。但是,由于处理腔室内处于减压气氛,因此,为了克服处理腔室内外的压力差而使上部电极(簇射头)或下部电极(载置台)上下移动的话,驱动源需要很大的驱动力,导致驱动所需要能量也变大。
发明内容
本发明为解决上述以往的问题,提供一种与以往相比能够谋求提高处理的面内均匀性并能够削减处理腔室内的无用空间而谋求装置的小型化、而且能够容易地改变上部电极和下部电极的间隔的等离子处理装置。
本发明的等离子处理装置包括:
下部电极,其设置于处理腔室内,兼作用于载置基板的载置台;
上部电极,其与上述下部电极相对地设置于上述处理腔室内,且具有自多个气体喷出孔以喷淋状朝向上述基板供给气体的作为簇射头的功能,该多个气体喷出孔设置于该上部电极的与上述下部电极相对的相对面上,并且该上部电极能够上下移动,从而能够改变其与上述下部电极的间隔;
盖体,其设置于上述上部电极的上侧,用于气密地闭塞上述处理腔室的上部开口;
多个排气孔,其形成于上述相对面;
环状构件,其以沿上述上部电极的周缘部向下方突出的方式设置,能够与上述上部电极连动地上下移动,在其下降位置,形成由该环状构件、上述下部电极和上述上部电极围成的处理空间;
多个环状构件气体喷出孔,其开口于上述环状构件的内壁部分,用于向上述处理空间内供给气体;
多个环状构件排气孔,其开口于上述环状构件的内壁部分,用于对上述处理空间内进行排气。
本发明能够提供一种与以往相比能够谋求提高处理的面内均匀性并能够削减处理腔室内的无用空间而谋求装置的小型化、并且能够容易地改变上部电极和下部电极的间隔的等离子处理装置。
附图说明
图1是表示本发明的一个实施方式的等离子处理装置的结构的纵剖视图。
图2是将图1的等离子处理装置的主要部分结构扩大地表示的纵剖视图。
图3是表示使图1的等离子处理装置的簇射头上升后的状态的纵剖视图。
图4是表示图1的等离子处理装置的薄片电缆(sheetcable)的结构的俯视图。
图5是表示图1的等离子处理装置的等效电路的图。
具体实施方式
以下,参照附图详细说明本发明的实施方式。
图1是示意地表示本发明的等离子处理装置的一个实施方式的等离子蚀刻装置200的剖面结构的图,图2是示意地表示设置于图1的等离子蚀刻装置200中的簇射头100的结构的剖视图。该等离子蚀刻装置200构成为电容耦合型平行平板等离子蚀刻装置,其电极板上下平行地相对,并且连接有等离子形成用电源(未图示)。
如图2所示,簇射头100由层叠体10构成,该层叠体10是由下侧构件1和配置于该下侧构件1的上侧的上侧构件2这两者层叠而成的。该下侧构件1及上侧构件2例如由在表面实施了阳极氧化处理后的铝等构成。如图1所示,该簇射头100以与用于载置半导体晶圆的载置台202相对的方式配置在等离子蚀刻装置200的处理腔室201中。即,以图2所示的下侧构件1侧形成与图1所示的载置台202相对的相对面14的方式设置。
在上述层叠体10中,用于形成与载置台202相对的相对面14的下侧构件1中形成有许多个气体喷出孔11,在下侧构件1和上侧构件2之间形成有与这些气体喷出孔11连通的气体流路12。如图2中箭头所示,这些气体喷出孔11用于以喷淋状朝向基板(图2中下侧)供给气体。在层叠体10的周缘部还设置有用于向气体流路12内导入气体的气体导入部(未图示)。
并且,在该层叠体10中形成有许多个贯通上述层叠体10、即贯通下侧构件1和上侧构件2的排气孔13。如图2中虚线的箭头所示,这些排气孔13构成排气机构,该排气机构以自基板侧(图2中下侧)朝向与基板相反的一侧(图2中上侧)形成气流的方式进行排气。
这些排气孔13的直径设定为例如1.2mm左右,且该排气孔13大致均等地设置于簇射头100的除周缘部(用于固定后述环状构件220的固定部)之外的整个区域。例如在用于处理直径为12英寸(300mm)的半导体晶圆的簇射头100的情况下,排气孔13的数量为2000~2500个左右。排气孔13的形状并不限定于圆形,例如也可以为椭圆形等,这些排气孔13也起到排出反应生成物的作用。并且,本实施方式中,簇射头100的外形与作为被处理基板的半导体晶圆的外形相配合地构成为圆板状。
图1所示的等离子蚀刻处理装置200的处理腔室(处理容器)201例如由表面被阳极氧化处理后的铝等形成为圆筒形状,该处理腔室201接地。在处理腔室201内设有载置台202,该载置台202用于载置作为被处理基板的半导体晶圆、且构成下部电极。在此载置台202上连接有未图示的高频电源等的高频电力施加装置。
在载置台202上侧设置有用于在其上静电吸附半导体晶圆的静电吸盘203。静电吸盘203是在绝缘材料之间配置电极而构成的,通过对该电极施加直流电压,利用库仑力来静电吸附半导体晶圆。并且,在载置台202中形成有供温度调节介质循环的流路(未图示),从而能够将吸附于静电卡盘203上的半导体晶圆的温度调整至规定的温度。如图3所示,在处理腔室201的侧壁部还形成有用于将半导体晶圆搬入到处理腔室201内或者自处理腔室201内搬出半导体晶圆的开口215。
在载置台202的上方,以与载置台202隔开间隔地相对的方式配置有图2所示的簇射头100。并且,形成簇射头100为上部电极、载置台202为下部电极的一对相对电极。自未图示的气体供给源向簇射头100的气体流路12内供给规定的气体(蚀刻气体)。
在簇射头100的上部还设置有盖体205,该盖体205用于气密地闭塞处理腔室201的上部开口,并构成处理腔室201的顶部,在该盖体205的中央部配设有筒状的排气管210。涡轮分子泵等真空泵(未图示)借助开闭控制阀门及开闭机构等与该排气管210连接。
在簇射头100的下面,设有以沿该簇射头100的周缘部向下方突出的方式形成为圆环状(圆筒状)的环状构件220。该环状构件220例如由被绝缘性的覆膜(阳极氧化覆膜等)覆盖的铝等构成,其以与作为上部电极的簇射头100电导通的状态被固定。
环状构件220连接于升降机构221,其能够与簇射头100一同上下移动。该环状构件220的内径设定得稍大于载置台202的外径,环状构件220能够下降至其下侧部分处于包围载置台202周围的状态的位置。图1是表示使环状构件220及簇射头100处于下降位置的状态。在该下降位置,在载置台202的上方形成有由载置台(下部电极)202、簇射头(上部电极)100和环状构件220围成的处理空间222。由此,通过利用能够上下运动的环状构件220来分隔出处理空间222,使处理空间222只形成于载置台202的上方,能够抑制自载置台202的周缘部朝向外侧地沿水平方向扩展的无用空间的形成。
另一方面,图3表示使环状构件220及簇射头100处于上升位置的状态。在该上升位置,用于向处理腔室201内搬入半导体晶圆或者自处理腔室201搬出半导体晶圆的开口215处于打开的状态,在该状态下进行向处理腔室201中搬入半导体晶圆或者自处理腔室201搬出半导体晶圆的操作。如图1所示,当使环状构件220及簇射头100处于下降位置时,该开口215被环状构件220覆盖而成为闭塞的状态。
作为升降机构221的驱动源,本实施方式中采用电动缸260。并且,使用沿处理腔室201的圆周方向等间隔地设置多个升降机构221的多点驱动方式。如此,通过使用采用电动缸260的多点驱动方式,例如与使用气压驱动的驱动机构的情况相比,能够更精确地控制环状构件220及簇射头100的位置。并且,即使做成多点驱动方式,也能够在电学上容易地对其进行协调控制。
如图1所示,电动缸260的驱动轴连接于升降轴261,该升降轴261以贯穿圆筒状的固定轴262内的方式配设,该固定轴262以自处理腔室201的底部朝向处理腔室201内的上部延伸的方式竖立设置。并且,在气密密封部263中,例如利用双重O型密封圈等实现升降轴261的驱动部分的气密密封。
在本实施方式中,簇射头100配置在用于将处理腔室201的上部开口气密地闭塞的盖体205的内侧的减压气氛内,减压气氛和大气气氛之间的压力差不会施加于簇射头100自身,压力差只施加于升降轴261部分。因此,能够用较小的驱动力容易地使簇射头100上下移动,从而能够谋求节能化。并且,因为能够降低驱动机构的机械强度,所以能够谋求降低装置成本。
在环状构件220中设置有开口于其内周面的多个环状构件排气孔230、及多个环状构件喷出孔240。在本实施方式中,环状构件排气孔230沿上下方向在直线上3个一组地设置,且沿环状构件220的圆周方向以规定的间隔均匀地形成有多组该环状构件排气孔230。并且,环状构件喷出孔240沿上下方向在直线上4个一组地设置,且沿环状构件侧220的圆周方向以规定的间隔均匀地形成有多组该环状构件喷出孔240。并且,环状构件排气孔230和环状构件喷出孔240的数量并不限定于上述的数量。
环状构件排气孔230用于对处理空间222内进行排气,其与在环状构件220的内部沿着圆周方向设置的未图示的排气通路相连通。这些环状构件排气孔230的形状不限定于圆形,例如也可以是椭圆形等。这些环状构件排气孔230也起到将反应生成物排出的作用。
并且,环状构件喷出孔240用于自未图示的气体供给源向处理空间222内供给处理气体,其与在环状构件220的内部沿圆周方向设置的未图示的处理气体流路相连通。另外,环状构件喷出孔240既可以大致水平地形成而水平地喷出处理气体,也可以与水平方向成规定的角度地形成、例如自上方向下方、即朝向基板的表面供给处理气体。
在环状构件220和载置台202下部的高频一侧的线的接地侧设置有用于将该两者电连接起来的薄片电缆250。该薄片电缆250沿着环状构件220的圆周方向等间隔地设置有多个。如图4所示,薄片电缆250是通过利用绝缘层252包覆由铜等形成的薄片状的导体251的表面而构成的,在薄片电缆250的两侧端部附近设有连接部253,该连接部253露出导体并形成有用于紧固螺钉的通孔。该薄片电缆250的厚度例如为几百微米左右,其具有挠性,且随着环状构件220及簇射头100的上下运动能够自由地变形。
薄片电缆250的作用在于形成环状构件220及作为上部电极的簇射头100的高频的回路。图5表示该等效电路。如图5所示,作为上部电极的簇射头100和环状构件220电连接,它们电连接于高频一侧的线的接地侧。
如此,在本实施方式中并不是通过处理腔室壁等,而是通过薄片电缆250以较短的路径使环状构件220及作为上部电极的簇射头100电连接于高频一侧的线的接地侧。由此,能够将由等离子体导致的各部位的电位差抑制得极低。
而且,环状构件220及作为上部电极的簇射头100上下移动的同时始终地借助薄片电缆250电连接于高频一侧的线的接地侧,不会出现电浮动状态。
如上所述,在等离子蚀刻装置200中具备能够上下运动的环状构件220,所以,能够使处理空间222只形成于载置台202的上方,从而能够抑制向水平方向外侧扩展的无用的空间。由此,能够谋求削减消耗的处理气体等。并且,由于自环状构件220供给并排出处理气体,因此,能够更加精细地控制处理空间222内的处理气体的状态,从而能够进行均匀的处理。而且,能够依据处理的条件等改变作为上部电极的簇射头100和载置台202之间的距离。
因为处理空间222的物理形状对称,所以,能够抑制由存在后述的开口215形成的非对称形状给等离子体造成的影响,从而能够进行更均匀的处理;前述的开口215用于向处理腔室201内搬入半导体晶圆或者自处理腔室201内搬出半导体晶圆。
在使用上述构造的等离子蚀刻装置200对半导体晶圆进行等离子蚀刻时,首先如图3所示,使环状构件220及簇射头100上升,打开开口215。在该状态下,自开口215向处理腔室201内搬入半导体晶圆,将半导体晶圆载置在静电吸盘203上,将其静电吸附于静电吸盘203上。
接着,使环状构件220及簇射头100下降,并关闭开口215,成为在半导体晶圆的上方形成处理空间222的状态。并且,利用真空泵等经由排气孔13及环状构件排气孔230将处理腔室201内的处理空间222真空抽吸至规定的真空度。
之后,自未图示的气体供给源供给规定流量的规定的处理气体(蚀刻气体)。该处理气体经由簇射头100的气体流路12自气体喷出孔11以喷淋状被供给至载置台202上的半导体晶圆。与此同时,规定流量的规定的处理气体(蚀刻气体)自环状构件气体喷出孔240被朝向载置台202上的半导体晶圆供给。
并且,处理腔室201内的压力被维持为规定的压力之后,向载置台202施加规定的频率、例如13.56MHz的高频电力。由此,在作为上部电极的簇射头100和作为下部电极的载置台202之间产生高频电场,蚀刻气体离解而等离子化。利用该等离子体对半导体晶圆进行规定的蚀刻处理。
在上述蚀刻处理中,自簇射头100的气体喷出孔11及环状构件200的环状构件气体喷出孔240供给来的处理气体自分散形成于簇射头100的许多个排气孔13及形成于环状构件220的环状构件排气孔230被排出,所以,不会像自处理腔室201的下部排气的情况那样地形成自半导体晶圆的中央部流向周围部气流。因此,能够使供给至半导体晶圆的处理气体更加均匀化。由此,能够使等离子体的状态均匀化,从而能够对半导体晶圆的各部分实施均匀的蚀刻处理。即,能够提高处理的面内均匀性。
而且,当规定的等离子蚀刻处理完成时,停止施加高频电力和供给处理气体,以与上述操作顺序相反的操作顺序自处理腔室201内搬出半导体晶圆。
如上所述,采用本实施方式的等离子蚀刻装置200,利用簇射头100及环状构件220来进行处理气体的供给及排出,所以,能够使供给到半导体品圆的处理气体更加均匀化。由此,能够对半导体晶圆的各部分实施均匀的蚀刻处理。
在上述的等离子蚀刻装置200中,因为自设置于簇射头100的排气孔13及设置于环状构件220的环状构件排气孔230进行排气,所以,不必像以往的装置那样,在载置台202的周围和簇射头100的周围设置排气路径。因此,能够使处理腔室201的直径更加接近于作为被处理基板的半导体晶圆的外径,从而能够谋求装置的小型化。并且,因为能够将真空泵设置于处理腔室201的上方,从而能够自更靠近处理腔室201的处理空间的部分进行排气,所以,能够高效率地进行排气。并且,因为设置有两个排气系统,所以,能够减少每个真空泵的容量,从而能够进一步谋求小型化。
并且,能够依据处理的情况,改变簇射头(上部电极)100和载置台(下部电极)202之间的间隔,而且能够用较小的驱动力容易地使簇射头100上下移动,所以,能够谋求节能化和降低装置成本。
另外,不言而喻,本发明不限定于上述的实施方式,能够进行各种变形。例如,在上述实施方式中,针对向载置台(下部电极)供给1个频率的高频电力的情况进行了说明,但是本发明也同样适用于向下部电极施加频率不同的多个高频电力这种类型的装置等。
Claims (6)
1.一种等离子处理装置,其特征在于,
包括:
下部电极,其设置于处理腔室内,兼作用于载置基板的载置台;
上部电极,其与上述下部电极相对地设置于上述处理腔室内,且具有自多个气体喷出孔以喷淋状朝向上述基板供给气体的作为由层叠体构成的簇射头的功能,该多个气体喷出孔设置于该上部电极的与上述下部电极相对的相对面上,并且该上部电极能够上下移动,从而能够改变其与上述下部电极的间隔;
盖体,其设置于上述上部电极的上侧,用于气密地闭塞上述处理腔室的上部开口;
多个排气孔,其形成于上述相对面,该排气孔贯穿上述层叠体;
环状构件,其以沿上述上部电极的周缘部向下方突出的方式设置,并且能够与上述上部电极连动地上下运动,在其下降位置,形成由该环状构件、上述下部电极和上述上部电极围成的处理空间;
多个环状构件气体喷出孔,其开口于上述环状构件的内壁部分,用于向上述处理空间内供给气体;
多个环状构件排气孔,其开口于上述环状构件的内壁部分,用于对上述处理空间内进行排气。
2.根据权利要求1所述的等离子处理装置,其特征在于,
在上述处理腔室侧壁的、位于上述下部电极和上述上部电极之间的位置,设有用于搬入或搬出上述基板的能够自由开闭的开口部,在使上述环状构件上升后的状态下搬入或搬出上述基板。
3.根据权利要求1或2所述的等离子处理装置,其特征在于,
上述环状构件由覆盖有绝缘性覆膜的铝构成。
4.根据权利要求1或2所述的等离子处理装置,其特征在于,
上述多个环状构件气体喷出孔中的至少一部分喷出孔以相对于水平方向成规定的角度的方式形成。
5.根据权利要求1或2所述的等离子处理装置,其特征在于,
上述环状构件与上述上部电极在电导通状态下固定在一起,上述环状构件借助薄片电缆连接于接地电位,该薄片电缆由表面被绝缘层覆盖的金属薄片构成且具有挠性。
6.根据权利要求1或2所述的等离子处理装置,其特征在于,
使上述环状构件和上述上部电极进行上下移动的驱动方法是利用电动缸的多点驱动。
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USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
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US20110132542A1 (en) | 2011-06-09 |
KR101977320B1 (ko) | 2019-05-10 |
US8986495B2 (en) | 2015-03-24 |
TWI497583B (zh) | 2015-08-21 |
KR20170015413A (ko) | 2017-02-08 |
KR20110063342A (ko) | 2011-06-10 |
KR101791991B1 (ko) | 2017-11-01 |
CN102142357A (zh) | 2011-08-03 |
TW201142940A (en) | 2011-12-01 |
JP5432686B2 (ja) | 2014-03-05 |
JP2011119461A (ja) | 2011-06-16 |
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