AU2002211730A1 - Plasma reactor with reduced reaction chamber - Google Patents

Plasma reactor with reduced reaction chamber

Info

Publication number
AU2002211730A1
AU2002211730A1 AU2002211730A AU1173002A AU2002211730A1 AU 2002211730 A1 AU2002211730 A1 AU 2002211730A1 AU 2002211730 A AU2002211730 A AU 2002211730A AU 1173002 A AU1173002 A AU 1173002A AU 2002211730 A1 AU2002211730 A1 AU 2002211730A1
Authority
AU
Australia
Prior art keywords
reaction chamber
plasma reactor
reduced reaction
reduced
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002211730A
Inventor
Steven T. Fink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2002211730A1 publication Critical patent/AU2002211730A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
AU2002211730A 2000-10-16 2001-10-15 Plasma reactor with reduced reaction chamber Abandoned AU2002211730A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24005700P 2000-10-16 2000-10-16
US60/240,057 2000-10-16
PCT/US2001/032094 WO2002033729A2 (en) 2000-10-16 2001-10-15 Plasma reactor with reduced reaction chamber

Publications (1)

Publication Number Publication Date
AU2002211730A1 true AU2002211730A1 (en) 2002-04-29

Family

ID=22904926

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002211730A Abandoned AU2002211730A1 (en) 2000-10-16 2001-10-15 Plasma reactor with reduced reaction chamber

Country Status (3)

Country Link
US (1) US20030209324A1 (en)
AU (1) AU2002211730A1 (en)
WO (1) WO2002033729A2 (en)

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US7045430B2 (en) * 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US20040189336A1 (en) * 2003-03-26 2004-09-30 Tokyo Electron Limited Apparatus for monitoring the connection state of connectors and a method for using the same
US8293069B2 (en) * 2004-03-15 2012-10-23 Sungkyunkwan University Inductively coupled plasma apparatus
US8317968B2 (en) 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US8349128B2 (en) * 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
KR100897176B1 (en) * 2005-07-20 2009-05-14 삼성모바일디스플레이주식회사 Inductively Coupled Plasma Processing Apparatus
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7897217B2 (en) * 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US20070116873A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
KR100907438B1 (en) * 2007-01-15 2009-07-14 (주)제이하라 Plasma generator
TW200830941A (en) * 2007-01-15 2008-07-16 Jehara Corp Plasma generating apparatus
US7993457B1 (en) * 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
KR100873923B1 (en) * 2007-05-18 2008-12-15 (주)제이하라 Plasma generator
JP4638550B2 (en) * 2008-09-29 2011-02-23 東京エレクトロン株式会社 Mask pattern forming method, fine pattern forming method, and film forming apparatus
CN101768731B (en) * 2008-12-29 2012-10-17 K.C.科技股份有限公司 Atomic layer deposition apparatus
JP5292160B2 (en) * 2009-03-31 2013-09-18 東京エレクトロン株式会社 Gas flow path structure and substrate processing apparatus
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
JP5432686B2 (en) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 Plasma processing equipment
JP5591585B2 (en) * 2010-05-17 2014-09-17 東京エレクトロン株式会社 Plasma processing equipment
US9398680B2 (en) * 2010-12-03 2016-07-19 Lam Research Corporation Immersible plasma coil assembly and method for operating the same
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US20130160948A1 (en) * 2011-12-23 2013-06-27 Lam Research Corporation Plasma Processing Devices With Corrosion Resistant Components
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
US20180142355A1 (en) * 2016-11-18 2018-05-24 Adnanotek Corp. System integrating atomic layer deposition and reactive ion etching
JP6615153B2 (en) * 2017-06-16 2019-12-04 東京エレクトロン株式会社 Substrate processing apparatus, substrate mounting mechanism, and substrate processing method
JP7011535B2 (en) * 2018-06-07 2022-01-26 株式会社日立ハイテク Stage device and charged particle beam device
SG11202101649WA (en) * 2018-09-28 2021-04-29 Applied Materials Inc Coaxial lift device with dynamic leveling
CN112807897A (en) * 2020-05-12 2021-05-18 王怀注 Chemical element analysis device with protection function
US20230070804A1 (en) * 2021-09-02 2023-03-09 Wonik Ips Co., Ltd. Substrate processing apparatus

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JPS5723227A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
CA1331163C (en) * 1986-04-18 1994-08-02 Applied Materials, Inc. Multiple-processing and contamination-free plasma etching system
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
DE3914065A1 (en) * 1989-04-28 1990-10-31 Leybold Ag DEVICE FOR CARRYING OUT PLASMA ETCHING PROCESSES
US5336355A (en) * 1991-12-13 1994-08-09 Hughes Aircraft Company Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films
US5354413A (en) * 1993-03-18 1994-10-11 Advanced Micro Devices, Inc. Electrode position controller for a semiconductor etching device
KR100264445B1 (en) * 1993-10-04 2000-11-01 히가시 데쓰로 Plasma treatment equipment
TW299559B (en) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
US6000360A (en) * 1996-07-03 1999-12-14 Tokyo Electron Limited Plasma processing apparatus
US6537418B1 (en) * 1997-09-19 2003-03-25 Siemens Aktiengesellschaft Spatially uniform gas supply and pump configuration for large wafer diameters

Also Published As

Publication number Publication date
US20030209324A1 (en) 2003-11-13
WO2002033729A3 (en) 2002-08-01
WO2002033729A2 (en) 2002-04-25

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