CN101935526B - 荧光体、其制备方法和发光装置 - Google Patents
荧光体、其制备方法和发光装置 Download PDFInfo
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- CN101935526B CN101935526B CN2010102688982A CN201010268898A CN101935526B CN 101935526 B CN101935526 B CN 101935526B CN 2010102688982 A CN2010102688982 A CN 2010102688982A CN 201010268898 A CN201010268898 A CN 201010268898A CN 101935526 B CN101935526 B CN 101935526B
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 23
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 13
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 238000002310 reflectometry Methods 0.000 claims description 37
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 26
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 26
- 229960001866 silicon dioxide Drugs 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 23
- 229910017083 AlN Inorganic materials 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- 229910052791 calcium Inorganic materials 0.000 claims description 14
- MYLBTCQBKAKUTJ-UHFFFAOYSA-N 7-methyl-6,8-bis(methylsulfanyl)pyrrolo[1,2-a]pyrazine Chemical compound C1=CN=CC2=C(SC)C(C)=C(SC)N21 MYLBTCQBKAKUTJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052788 barium Inorganic materials 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 11
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- 238000002156 mixing Methods 0.000 claims description 10
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- 229910052751 metal Inorganic materials 0.000 claims description 6
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- 238000010521 absorption reaction Methods 0.000 claims description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
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- 102100032047 Alsin Human genes 0.000 description 4
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- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
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- 229910052757 nitrogen Inorganic materials 0.000 description 4
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- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- 238000001228 spectrum Methods 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 239000004110 Zinc silicate Substances 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- IJBYNGRZBZDSDK-UHFFFAOYSA-N barium magnesium Chemical compound [Mg].[Ba] IJBYNGRZBZDSDK-UHFFFAOYSA-N 0.000 description 1
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- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- 238000007789 sealing Methods 0.000 description 1
- -1 siloxanes Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003019 stabilising effect Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 235000019352 zinc silicate Nutrition 0.000 description 1
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 1
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
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- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Chemical & Material Sciences (AREA)
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- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
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- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Luminescent Compositions (AREA)
- Ceramic Products (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
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Abstract
Description
Claims (7)
Applications Claiming Priority (2)
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JP2006317524A JP5367218B2 (ja) | 2006-11-24 | 2006-11-24 | 蛍光体の製造方法および発光装置の製造方法 |
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Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007049114A (ja) | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
US20070052342A1 (en) * | 2005-09-01 | 2007-03-08 | Sharp Kabushiki Kaisha | Light-emitting device |
JP5367218B2 (ja) * | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
EP2148910B1 (en) * | 2007-04-20 | 2010-12-08 | Philips Intellectual Property & Standards GmbH | White emitting light source and luminescent material with improved colour stability |
JP2009019163A (ja) * | 2007-07-13 | 2009-01-29 | Sharp Corp | 発光装置用蛍光体粒子集合体、発光装置、および液晶表示用バックライト装置 |
US8058088B2 (en) | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
JP5832713B2 (ja) * | 2008-04-14 | 2015-12-16 | 日亜化学工業株式会社 | 蛍光体及びこれを用いた発光装置並びに蛍光体の製造方法 |
US8158026B2 (en) | 2008-08-12 | 2012-04-17 | Samsung Led Co., Ltd. | Method for preparing B-Sialon phosphor |
CN102216421B (zh) * | 2008-08-12 | 2014-12-17 | 三星电子株式会社 | 制备β-SiAlON磷光体的方法 |
JP2010177620A (ja) * | 2009-02-02 | 2010-08-12 | Showa Denko Kk | 発光装置の製造方法 |
WO2010098141A1 (ja) * | 2009-02-26 | 2010-09-02 | 日亜化学工業株式会社 | 蛍光体及びその製造方法並びにこれを用いた発光装置 |
JP5450625B2 (ja) | 2009-07-02 | 2014-03-26 | シャープ株式会社 | 発光装置 |
JP5558787B2 (ja) | 2009-11-13 | 2014-07-23 | 電気化学工業株式会社 | β型サイアロンの製造方法 |
US8709283B2 (en) | 2010-01-08 | 2014-04-29 | Sharp Kabushiki Kaisha | Phosphor, light emitting apparatus, and liquid crystal display apparatus using the same |
JP5190475B2 (ja) * | 2010-02-19 | 2013-04-24 | 株式会社東芝 | 蛍光体およびそれを用いた発光装置 |
JP4740379B1 (ja) * | 2010-02-25 | 2011-08-03 | 電気化学工業株式会社 | β型サイアロン蛍光体、その用途及びβ型サイアロン蛍光体の製造方法 |
JP5791034B2 (ja) | 2010-02-26 | 2015-10-07 | 国立研究開発法人物質・材料研究機構 | 発光装置 |
US20110220920A1 (en) * | 2010-03-09 | 2011-09-15 | Brian Thomas Collins | Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices |
US8643038B2 (en) * | 2010-03-09 | 2014-02-04 | Cree, Inc. | Warm white LEDs having high color rendering index values and related luminophoric mediums |
US8901591B2 (en) | 2010-07-26 | 2014-12-02 | Sharp Kabushiki Kaisha | Light-emitting device |
CN102376860A (zh) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | 发光装置及其制造方法 |
JP2012057071A (ja) * | 2010-09-09 | 2012-03-22 | Denki Kagaku Kogyo Kk | β型サイアロンの製造方法 |
EP2664660A4 (en) | 2010-09-16 | 2014-03-05 | Denki Kagaku Kogyo Kk | BETA-TYPE SIALON, METHOD FOR PRODUCING THE SAME, AND LIGHT-EMITTING DEVICE |
US20120153184A1 (en) * | 2010-12-21 | 2012-06-21 | Honeywell International Inc. | Luminescent phosphor-containing materials, and methods for their production and use in authenticating articles |
EP3133135B1 (en) * | 2011-01-18 | 2019-03-06 | Sharp Kabushiki Kaisha | Semiconductor light-emitting device |
DE102011016567B4 (de) * | 2011-04-08 | 2023-05-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes Bauelement |
US8513900B2 (en) * | 2011-05-12 | 2013-08-20 | Ledengin, Inc. | Apparatus for tuning of emitter with multiple LEDs to a single color bin |
CN102796522A (zh) * | 2011-05-27 | 2012-11-28 | 亿广科技(上海)有限公司 | 荧光粉组合物及使用该荧光粉组合物的白色发光装置 |
US8814621B2 (en) | 2011-06-03 | 2014-08-26 | Cree, Inc. | Methods of determining and making red nitride compositions |
US8729790B2 (en) | 2011-06-03 | 2014-05-20 | Cree, Inc. | Coated phosphors and light emitting devices including the same |
US8906263B2 (en) | 2011-06-03 | 2014-12-09 | Cree, Inc. | Red nitride phosphors |
US8747697B2 (en) | 2011-06-07 | 2014-06-10 | Cree, Inc. | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
EP2637224B1 (en) * | 2012-03-09 | 2019-04-03 | Panasonic Intellectual Property Management Co., Ltd. | Light emitting device, illumination apparatus and system using same |
JP6341097B2 (ja) | 2013-02-07 | 2018-06-13 | 三菱ケミカル株式会社 | 窒化物蛍光体とその製造方法 |
US8941295B2 (en) * | 2013-04-29 | 2015-01-27 | Kai-Shon Tsai | Fluorescent material and illumination device |
CN104212448A (zh) * | 2013-05-30 | 2014-12-17 | 晶元光电股份有限公司 | 萤光材料及其制备方法 |
WO2016094863A1 (en) * | 2014-12-11 | 2016-06-16 | Nitto Denko Corporation | Nitride phosphor element for light emitting diodes |
CN104485327B (zh) * | 2014-12-11 | 2017-08-01 | 杭州杭科光电股份有限公司 | 一种led光源和led发光模组的制备方法 |
US9530943B2 (en) | 2015-02-27 | 2016-12-27 | Ledengin, Inc. | LED emitter packages with high CRI |
JP6354626B2 (ja) * | 2015-03-09 | 2018-07-11 | 豊田合成株式会社 | 発光装置の製造方法 |
JP6472728B2 (ja) | 2015-08-04 | 2019-02-20 | 日亜化学工業株式会社 | 発光装置および発光装置を備えたバックライト |
US11004891B2 (en) * | 2016-02-09 | 2021-05-11 | Nichia Corporation | Light emitting device and backlight including the light emitting device |
US10219345B2 (en) | 2016-11-10 | 2019-02-26 | Ledengin, Inc. | Tunable LED emitter with continuous spectrum |
JP7428465B2 (ja) * | 2017-07-20 | 2024-02-06 | デンカ株式会社 | 赤色蛍光体及び発光装置 |
KR102230459B1 (ko) * | 2017-09-06 | 2021-03-23 | 지엘비텍 주식회사 | D50, d65 고연색성 표준 led 발광 모듈 및 조명 장치 |
JP6912728B2 (ja) * | 2018-03-06 | 2021-08-04 | 日亜化学工業株式会社 | 発光装置及び光源装置 |
KR102674932B1 (ko) * | 2018-03-29 | 2024-06-14 | 덴카 주식회사 | α형 사이알론 형광체 및 발광 장치 |
NL2023498B1 (en) * | 2019-07-12 | 2021-02-04 | Physee Group B V | Optical structures comprising luminescent materials for plant growth optimization |
US11293602B2 (en) * | 2020-02-28 | 2022-04-05 | Glbtech Co., Ltd. | High color rendering D50/D65 standard LED illuminant module and lighting apparatus |
TWI772234B (zh) * | 2021-12-02 | 2022-07-21 | 財團法人工業技術研究院 | 透明氮化物 |
EP4293733A4 (en) | 2022-01-20 | 2024-04-17 | Mitsubishi Chemical Corporation | PHOSPHORUS, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, IMAGE DISPLAY DEVICE AND VEHICLE DISPLAY LAMP |
KR102599818B1 (ko) | 2022-01-20 | 2023-11-08 | 미쯔비시 케미컬 주식회사 | 형광체, 발광 장치, 조명 장치, 화상 표시 장치 및 차량용 표시등 |
Family Cites Families (142)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3707641A (en) | 1970-12-22 | 1972-12-26 | Westinghouse Electric Corp | Discharge device which utilizes a mixture of two fluorescent materials |
NL160869C (nl) | 1972-11-03 | Philips Nv | Luminescerend scherm, alsmede ontladingslamp en katho- de straalbuis, voorzien van een dergelijk scherm. | |
US4390637A (en) | 1980-09-10 | 1983-06-28 | Nippon Electric Glass Company, Limited | X-Ray absorbing glass for a color cathode ray tube having a controlled chromaticity value and a selective light absorption |
JPH0316988A (ja) | 1989-06-14 | 1991-01-24 | Hitachi Cable Ltd | 化合物半導体単結晶製造装置 |
JP2790673B2 (ja) | 1989-09-20 | 1998-08-27 | 化成オプトニクス株式会社 | アルミン酸塩蛍光体 |
EP0686997A3 (en) | 1994-06-06 | 1996-06-26 | Matsushita Electric Ind Co Ltd | Discharge lamp and lighting device for general lighting |
TW353678B (en) | 1994-08-17 | 1999-03-01 | Mitsubishi Chem Corp | Aluminate phosphor |
EP1441395B9 (de) | 1996-06-26 | 2012-08-15 | OSRAM Opto Semiconductors GmbH | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US6608332B2 (en) | 1996-07-29 | 2003-08-19 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device and display |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
JP2927279B2 (ja) | 1996-07-29 | 1999-07-28 | 日亜化学工業株式会社 | 発光ダイオード |
JP3106988B2 (ja) | 1997-02-07 | 2000-11-06 | 三菱マテリアル株式会社 | 薄膜形成用溶液及び薄膜形成方法 |
JPH10228868A (ja) | 1997-02-13 | 1998-08-25 | Ind Technol Res Inst | プラズマディスプレイの発光効率を改善する方法 |
JP3095366B2 (ja) | 1997-04-07 | 2000-10-03 | 北川精機株式会社 | プレス制御方法及びプレス装置 |
JP3966954B2 (ja) | 1997-09-01 | 2007-08-29 | 東芝電子エンジニアリング株式会社 | 照明装置、読み取り装置、投影装置、浄化装置、および表示装置 |
US6340824B1 (en) | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
JPH11140437A (ja) | 1997-11-06 | 1999-05-25 | Matsushita Electric Ind Co Ltd | 二価ユーロピウム付活蛍光体の製造方法 |
JP2907286B1 (ja) | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | 蛍光カバーを有する樹脂封止型半導体発光装置 |
JP3645422B2 (ja) | 1998-07-14 | 2005-05-11 | 東芝電子エンジニアリング株式会社 | 発光装置 |
JP3486345B2 (ja) | 1998-07-14 | 2004-01-13 | 東芝電子エンジニアリング株式会社 | 半導体発光装置 |
JP2000109826A (ja) | 1998-10-05 | 2000-04-18 | Kasei Optonix Co Ltd | アルカリ土類アルミン酸塩蛍光体及び蛍光ランプ |
US6429583B1 (en) | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
JP3081842B1 (ja) * | 1999-07-13 | 2000-08-28 | ファインセラミックス技術研究組合 | αサイアロン粒子 |
US6686691B1 (en) | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
TWI272299B (en) | 1999-10-06 | 2007-02-01 | Sumitomo Chemical Co | A process for producing aluminate-based phosphor |
JP2001127346A (ja) | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | 発光ダイオード |
JP2001172623A (ja) | 1999-12-20 | 2001-06-26 | Toshiba Corp | 蛍光体およびそれを用いた蛍光ランプ |
TWI285217B (en) | 2000-04-06 | 2007-08-11 | Sumitomo Chemical Co | Vacuum ultraviolet ray-excited light-emitting phosphor |
JP2002003836A (ja) | 2000-06-22 | 2002-01-09 | Matsushita Electric Ind Co Ltd | 蛍光体およびそれを用いた蛍光ランプ |
JP3515737B2 (ja) | 2000-06-22 | 2004-04-05 | 松下電器産業株式会社 | 蛍光体およびそれを用いた蛍光ランプ |
CN100567447C (zh) | 2000-06-27 | 2009-12-09 | 住友化学工业株式会社 | 铝酸盐荧光物质的制法、荧光物质和含荧光物质的装置 |
DE10036940A1 (de) | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lumineszenz-Konversions-LED |
JP4077170B2 (ja) | 2000-09-21 | 2008-04-16 | シャープ株式会社 | 半導体発光装置 |
JP3609709B2 (ja) | 2000-09-29 | 2005-01-12 | 株式会社シチズン電子 | 発光ダイオード |
US20020084745A1 (en) | 2000-12-29 | 2002-07-04 | Airma Optoelectronics Corporation | Light emitting diode with light conversion by dielectric phosphor powder |
MY131962A (en) | 2001-01-24 | 2007-09-28 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
JP3447274B2 (ja) | 2001-02-22 | 2003-09-16 | 化成オプトニクス株式会社 | アルミン酸塩蛍光体の製造方法 |
JP2002275462A (ja) | 2001-03-21 | 2002-09-25 | Nemoto & Co Ltd | ランプ用蛍光体およびその製造方法 |
JP4101468B2 (ja) | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
US7091656B2 (en) | 2001-04-20 | 2006-08-15 | Nichia Corporation | Light emitting device |
JP3668770B2 (ja) * | 2001-06-07 | 2005-07-06 | 独立行政法人物質・材料研究機構 | 希土類元素を付活させた酸窒化物蛍光体 |
US6632379B2 (en) | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
JP2003121838A (ja) | 2001-08-06 | 2003-04-23 | Toray Ind Inc | 液晶表示装置 |
JP4032682B2 (ja) | 2001-08-28 | 2008-01-16 | 三菱化学株式会社 | 蛍光体 |
US7189340B2 (en) | 2004-02-12 | 2007-03-13 | Mitsubishi Chemical Corporation | Phosphor, light emitting device using phosphor, and display and lighting system using light emitting device |
JP3985486B2 (ja) | 2001-10-01 | 2007-10-03 | 松下電器産業株式会社 | 半導体発光素子とこれを用いた発光装置 |
US7294956B2 (en) | 2001-10-01 | 2007-11-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and light emitting device using this |
JP3946541B2 (ja) | 2002-02-25 | 2007-07-18 | 三菱電線工業株式会社 | 発光装置およびそれを用いた照明装置、ならびに該発光装置の製造方法と設計方法 |
JP4214768B2 (ja) | 2002-11-29 | 2009-01-28 | 日亜化学工業株式会社 | 窒化物蛍光体及びそれを用いた発光装置 |
AU2003221442A1 (en) | 2002-03-22 | 2003-10-08 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
JP2003321675A (ja) | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | 窒化物蛍光体及びその製造方法 |
EP1490453B1 (en) | 2002-03-25 | 2012-08-15 | Philips Intellectual Property & Standards GmbH | Tri-color white light led lamp |
JP3707446B2 (ja) | 2002-05-28 | 2005-10-19 | 住友電気工業株式会社 | 白色発光素子 |
CA2427559A1 (en) | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
ATE421169T1 (de) | 2002-06-13 | 2009-01-15 | Cree Inc | Halbleiter-strahlungsquelle mit gesättigtem phosphor |
JP3655267B2 (ja) | 2002-07-17 | 2005-06-02 | 株式会社東芝 | 半導体発光装置 |
JP4197109B2 (ja) | 2002-08-06 | 2008-12-17 | 静雄 藤田 | 照明装置 |
JP4222059B2 (ja) | 2002-09-24 | 2009-02-12 | 日亜化学工業株式会社 | 発光装置 |
US6717353B1 (en) | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
JP2004210921A (ja) | 2002-12-27 | 2004-07-29 | Nichia Chem Ind Ltd | オキシ窒化物蛍光体及びその製造方法並びにそれを用いた発光装置 |
JP3775377B2 (ja) | 2002-11-06 | 2006-05-17 | 日亜化学工業株式会社 | マンガン付活アルミン酸塩蛍光体とその製造方法及び真空紫外線励起発光装置 |
JP4207537B2 (ja) | 2002-11-08 | 2009-01-14 | 日亜化学工業株式会社 | 蛍光体および発光装置 |
JP5138145B2 (ja) | 2002-11-12 | 2013-02-06 | 日亜化学工業株式会社 | 蛍光体積層構造及びそれを用いる光源 |
JP4072632B2 (ja) | 2002-11-29 | 2008-04-09 | 豊田合成株式会社 | 発光装置及び発光方法 |
JP4124684B2 (ja) | 2003-03-25 | 2008-07-23 | セイコーインスツル株式会社 | 半透過型液晶表示装置 |
JP4274843B2 (ja) | 2003-04-21 | 2009-06-10 | シャープ株式会社 | Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 |
KR100609830B1 (ko) | 2003-04-25 | 2006-08-09 | 럭스피아 주식회사 | 녹색 및 적색형광체를 이용하는 백색 반도체 발광장치 |
DE10324832A1 (de) | 2003-06-02 | 2004-12-23 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Entladungslampe mit Leuchtstoff |
JP2005003436A (ja) | 2003-06-10 | 2005-01-06 | Konica Minolta Medical & Graphic Inc | 輝尽性蛍光体の製造方法と、それを用いた放射線画像変換パネル及びその製造方法 |
US7026755B2 (en) * | 2003-08-07 | 2006-04-11 | General Electric Company | Deep red phosphor for general illumination applications |
US7544316B2 (en) | 2003-08-27 | 2009-06-09 | Graftech International Holdings Inc. | Process for making graphite articles |
US7285913B2 (en) | 2003-08-29 | 2007-10-23 | Matsushita Electric Industrial Co., Ltd. | Plasma display device having blue phosphor layers with alkaline earth metal aluminate containing molybdenum or tungsten |
JP2005091480A (ja) | 2003-09-12 | 2005-04-07 | Nitto Denko Corp | 異方性フィルムの製造方法 |
US7723740B2 (en) | 2003-09-18 | 2010-05-25 | Nichia Corporation | Light emitting device |
JP4366161B2 (ja) | 2003-09-19 | 2009-11-18 | スタンレー電気株式会社 | 半導体発光装置 |
JP2005109085A (ja) | 2003-09-30 | 2005-04-21 | Okaya Electric Ind Co Ltd | 発光ダイオード |
US7488432B2 (en) | 2003-10-28 | 2009-02-10 | Nichia Corporation | Fluorescent material and light-emitting device |
US7094362B2 (en) | 2003-10-29 | 2006-08-22 | General Electric Company | Garnet phosphor materials having enhanced spectral characteristics |
JP3837588B2 (ja) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
KR100540848B1 (ko) | 2004-01-02 | 2006-01-11 | 주식회사 메디아나전자 | 이중 몰드로 구성된 백색 발광다이오드 소자 및 그 제조방법 |
US20080231170A1 (en) | 2004-01-26 | 2008-09-25 | Fukudome Masato | Wavelength Converter, Light-Emitting Device, Method of Producing Wavelength Converter and Method of Producing Light-Emitting Device |
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
JP4511849B2 (ja) | 2004-02-27 | 2010-07-28 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、光源、並びにled |
JP2005244075A (ja) | 2004-02-27 | 2005-09-08 | Matsushita Electric Works Ltd | 発光装置 |
TWI262609B (en) | 2004-02-27 | 2006-09-21 | Dowa Mining Co | Phosphor and manufacturing method thereof, and light source, LED using said phosphor |
JP3921545B2 (ja) | 2004-03-12 | 2007-05-30 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法 |
JP2005298805A (ja) | 2004-03-16 | 2005-10-27 | Mitsubishi Chemicals Corp | 発光装置及び照明装置 |
EP1736525B1 (en) * | 2004-03-22 | 2011-10-05 | Fujikura Ltd. | Oxynitride phosphor and light-emitting device |
JP2005272486A (ja) * | 2004-03-22 | 2005-10-06 | Fujikura Ltd | 粉末蛍光体、アルファサイアロン蛍光体製造方法及び発光デバイス |
TWI286393B (en) | 2004-03-24 | 2007-09-01 | Toshiba Lighting & Technology | Lighting apparatus |
JP4451178B2 (ja) | 2004-03-25 | 2010-04-14 | スタンレー電気株式会社 | 発光デバイス |
JP4128564B2 (ja) | 2004-04-27 | 2008-07-30 | 松下電器産業株式会社 | 発光装置 |
US7391060B2 (en) | 2004-04-27 | 2008-06-24 | Matsushita Electric Industrial Co., Ltd. | Phosphor composition and method for producing the same, and light-emitting device using the same |
US7077978B2 (en) | 2004-05-14 | 2006-07-18 | General Electric Company | Phosphors containing oxides of alkaline-earth and group-IIIB metals and white-light sources incorporating same |
JP4565141B2 (ja) | 2004-06-30 | 2010-10-20 | 独立行政法人物質・材料研究機構 | 蛍光体と発光器具 |
US8417215B2 (en) | 2004-07-28 | 2013-04-09 | Koninklijke Philips Electronics N.V. | Method for positioning of wireless medical devices with short-range radio frequency technology |
JP4888624B2 (ja) * | 2004-07-30 | 2012-02-29 | 独立行政法人物質・材料研究機構 | α型サイアロン粉末の製造方法 |
US7138756B2 (en) | 2004-08-02 | 2006-11-21 | Dowa Mining Co., Ltd. | Phosphor for electron beam excitation and color display device using the same |
US7453195B2 (en) | 2004-08-02 | 2008-11-18 | Lumination Llc | White lamps with enhanced color contrast |
JP4524470B2 (ja) | 2004-08-20 | 2010-08-18 | Dowaエレクトロニクス株式会社 | 蛍光体およびその製造方法、並びに当該蛍光体を用いた光源 |
JP4543250B2 (ja) | 2004-08-27 | 2010-09-15 | Dowaエレクトロニクス株式会社 | 蛍光体混合物および発光装置 |
CN100513517C (zh) * | 2004-08-30 | 2009-07-15 | 株式会社藤仓 | 氧氮化物荧光体及发光器件 |
JP4729281B2 (ja) | 2004-09-13 | 2011-07-20 | 株式会社フジクラ | 発光ダイオード及び発光ダイオード製造方法 |
WO2006033418A1 (ja) | 2004-09-22 | 2006-03-30 | National Institute For Materials Science | 蛍光体とその製造方法および発光器具 |
CN101023535B (zh) | 2004-09-22 | 2010-06-02 | 株式会社东芝 | 发光装置与使用该发光装置的背照光及液晶显示装置 |
JP4674348B2 (ja) | 2004-09-22 | 2011-04-20 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法および発光器具 |
US7265488B2 (en) | 2004-09-30 | 2007-09-04 | Avago Technologies General Ip Pte. Ltd | Light source with wavelength converting material |
JP2006114637A (ja) | 2004-10-13 | 2006-04-27 | Toshiba Corp | 半導体発光装置 |
US7713441B2 (en) | 2004-10-15 | 2010-05-11 | Mitsubishi Chemical Corporation | Fluorescent material, fluorescent device using the same, and image display device and lighting equipment |
JP2006165266A (ja) | 2004-12-07 | 2006-06-22 | Matsushita Electric Works Ltd | 発光装置 |
US7356054B2 (en) | 2004-12-17 | 2008-04-08 | Nichia Corporation | Light emitting device |
JP4720177B2 (ja) | 2004-12-17 | 2011-07-13 | 日亜化学工業株式会社 | 発光装置 |
EP1830415B1 (en) | 2004-12-24 | 2017-01-25 | Kabushiki Kaisha Toshiba | White led, backlight using same and liquid crystal display |
US20070114562A1 (en) | 2005-11-22 | 2007-05-24 | Gelcore, Llc | Red and yellow phosphor-converted LEDs for signal applications |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
US7648649B2 (en) | 2005-02-02 | 2010-01-19 | Lumination Llc | Red line emitting phosphors for use in led applications |
US7497973B2 (en) | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
CN102585810A (zh) | 2005-02-28 | 2012-07-18 | 电气化学工业株式会社 | 荧光体及其制造方法及使用了该荧光体的发光元件 |
JP4104013B2 (ja) | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | 発光デバイス及び照明装置 |
KR100984822B1 (ko) | 2005-03-22 | 2010-10-04 | 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 | 형광체와 그 제조 방법 |
JP2006332269A (ja) | 2005-05-25 | 2006-12-07 | Toyoda Gosei Co Ltd | 発光装置 |
JP2007049114A (ja) | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
JP4817728B2 (ja) | 2005-06-29 | 2011-11-16 | 株式会社東芝 | 超音波診断装置 |
JP4794235B2 (ja) | 2005-08-02 | 2011-10-19 | シャープ株式会社 | 発光装置 |
US20070052342A1 (en) * | 2005-09-01 | 2007-03-08 | Sharp Kabushiki Kaisha | Light-emitting device |
JP4832995B2 (ja) | 2005-09-01 | 2011-12-07 | シャープ株式会社 | 発光装置 |
JP4769132B2 (ja) | 2005-11-30 | 2011-09-07 | シャープ株式会社 | 発光装置 |
US8147715B2 (en) | 2005-12-08 | 2012-04-03 | National Institute For Materials Science | Phosphor, process for producing the same, and luminescent device |
WO2007088966A1 (ja) * | 2006-02-02 | 2007-08-09 | Mitsubishi Chemical Corporation | 複合酸窒化物蛍光体、それを用いた発光装置、画像表示装置、照明装置及び蛍光体含有組成物、並びに、複合酸窒化物 |
EP2043165B1 (en) | 2006-06-27 | 2014-12-03 | Mitsubishi Chemical Corporation | Illuminating device |
US20080029720A1 (en) | 2006-08-03 | 2008-02-07 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
JP5367218B2 (ja) * | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
EP2175006B1 (en) | 2007-07-09 | 2013-07-24 | Sharp Kabushiki Kaisha | Group of phosphor particles, and light-emitting device using the same |
JP2009019163A (ja) | 2007-07-13 | 2009-01-29 | Sharp Corp | 発光装置用蛍光体粒子集合体、発光装置、および液晶表示用バックライト装置 |
JP2009094199A (ja) | 2007-10-05 | 2009-04-30 | Sharp Corp | 発光装置、面光源、表示装置と、その製造方法 |
CN102790164B (zh) | 2008-03-03 | 2016-08-10 | Ge磷光体技术有限责任公司 | 发光装置 |
JP5239941B2 (ja) | 2009-02-26 | 2013-07-17 | 豊田合成株式会社 | 発光装置の製造方法 |
CN102365345A (zh) | 2009-04-06 | 2012-02-29 | 夏普株式会社 | 荧光体粒子组以及使用该荧光体粒子组的发光装置、液晶电视 |
US8709283B2 (en) | 2010-01-08 | 2014-04-29 | Sharp Kabushiki Kaisha | Phosphor, light emitting apparatus, and liquid crystal display apparatus using the same |
JP4740379B1 (ja) * | 2010-02-25 | 2011-08-03 | 電気化学工業株式会社 | β型サイアロン蛍光体、その用途及びβ型サイアロン蛍光体の製造方法 |
CN102376860A (zh) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | 发光装置及其制造方法 |
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US10259997B2 (en) | 2019-04-16 |
CN101935526A (zh) | 2011-01-05 |
US20080258602A1 (en) | 2008-10-23 |
US8663498B2 (en) | 2014-03-04 |
US20140139101A1 (en) | 2014-05-22 |
CN101186820A (zh) | 2008-05-28 |
US9624427B2 (en) | 2017-04-18 |
US20180044587A1 (en) | 2018-02-15 |
US20170081586A1 (en) | 2017-03-23 |
US9884990B2 (en) | 2018-02-06 |
JP2008127547A (ja) | 2008-06-05 |
JP5367218B2 (ja) | 2013-12-11 |
CN101186820B (zh) | 2013-03-13 |
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