CN100513517C - 氧氮化物荧光体及发光器件 - Google Patents
氧氮化物荧光体及发光器件 Download PDFInfo
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- CN100513517C CN100513517C CNB2005800013250A CN200580001325A CN100513517C CN 100513517 C CN100513517 C CN 100513517C CN B2005800013250 A CNB2005800013250 A CN B2005800013250A CN 200580001325 A CN200580001325 A CN 200580001325A CN 100513517 C CN100513517 C CN 100513517C
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 229910003564 SiAlON Inorganic materials 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000695 excitation spectrum Methods 0.000 description 39
- 238000002474 experimental method Methods 0.000 description 37
- 238000001228 spectrum Methods 0.000 description 35
- 239000011575 calcium Substances 0.000 description 33
- 239000011347 resin Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 21
- 239000000523 sample Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 17
- 229910052791 calcium Inorganic materials 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 230000005284 excitation Effects 0.000 description 14
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 12
- 229910052693 Europium Inorganic materials 0.000 description 11
- 229910052727 yttrium Inorganic materials 0.000 description 11
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 9
- 239000002994 raw material Substances 0.000 description 7
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- 101150072724 cye-1 gene Proteins 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
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- 239000000843 powder Substances 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 101710156645 Peptide deformylase 2 Proteins 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000003081 coactivator Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 235000012204 lemonade/lime carbonate Nutrition 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940043267 rhodamine b Drugs 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004250468 | 2004-08-30 | ||
JP250468/2004 | 2004-08-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1898358A CN1898358A (zh) | 2007-01-17 |
CN100513517C true CN100513517C (zh) | 2009-07-15 |
Family
ID=35999918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800013250A Active CN100513517C (zh) | 2004-08-30 | 2005-08-25 | 氧氮化物荧光体及发光器件 |
Country Status (7)
Country | Link |
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US (1) | US7597821B2 (zh) |
EP (1) | EP1785465B1 (zh) |
JP (1) | JP4045299B2 (zh) |
KR (1) | KR100772047B1 (zh) |
CN (1) | CN100513517C (zh) |
TW (1) | TW200617144A (zh) |
WO (1) | WO2006025261A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070159818A1 (en) * | 2006-01-07 | 2007-07-12 | Rueggeberg Frederick A | Use of integrating sphere technology to provide uniform, high-intensity light, and wavelength mixing from light emitting diodes |
US7938643B2 (en) * | 2006-01-07 | 2011-05-10 | Medical College Of Georgia Research Institute, Inc. | Use of integrating sphere technology to provide uniform, high-intensity light, and wavelength mixing from light emitting diodes |
KR101258229B1 (ko) * | 2006-06-30 | 2013-04-25 | 서울반도체 주식회사 | 발광 소자 |
JP5367218B2 (ja) * | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
JP5229770B2 (ja) | 2007-03-22 | 2013-07-03 | 株式会社フジクラ | サイアロン蛍光体 |
KR101260101B1 (ko) | 2007-04-18 | 2013-05-02 | 미쓰비시 가가꾸 가부시키가이샤 | 형광체 및 그 제조 방법, 형광체 함유 조성물, 발광 장치, 조명 장치, 화상 표시 장치, 그리고 질소 함유 화합물 |
US8436526B2 (en) | 2008-02-11 | 2013-05-07 | Sensor Electronic Technology, Inc. | Multiwavelength solid-state lamps with an enhanced number of rendered colors |
US7990045B2 (en) * | 2008-03-15 | 2011-08-02 | Sensor Electronic Technology, Inc. | Solid-state lamps with partial conversion in phosphors for rendering an enhanced number of colors |
JP2011014766A (ja) * | 2009-07-03 | 2011-01-20 | Koito Mfg Co Ltd | 発光モジュールおよび車両用灯具 |
JP5544161B2 (ja) * | 2009-12-28 | 2014-07-09 | 三菱化学株式会社 | 蛍光体 |
WO2011126035A1 (ja) | 2010-03-31 | 2011-10-13 | 宇部興産株式会社 | サイアロン系酸窒化物蛍光体の製造方法及びサイアロン系酸窒化物蛍光体 |
KR101772656B1 (ko) | 2011-05-19 | 2017-08-29 | 삼성전자주식회사 | 형광체 및 발광장치 |
KR101886714B1 (ko) * | 2011-12-13 | 2018-08-08 | 엘지이노텍 주식회사 | 산질화물 형광체 및 그를 포함한 발광소자 패키지 |
US9777215B2 (en) * | 2013-05-28 | 2017-10-03 | Ube Industries, Ltd. | Oxynitride phosphor powder |
KR102164079B1 (ko) * | 2014-05-30 | 2020-10-12 | 엘지이노텍 주식회사 | 산질화물계 형광체를 포함하는 발광 소자 패키지 |
CN109020558B (zh) * | 2018-09-07 | 2021-11-12 | 安徽理工大学 | 一种大功率暖白光固态照明用SiAlON荧光透明陶瓷及其制备方法 |
WO2023145656A1 (ja) * | 2022-01-26 | 2023-08-03 | 株式会社小糸製作所 | 半導体発光素子、前照灯装置、および半導体発光素子の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3668770B2 (ja) | 2001-06-07 | 2005-07-06 | 独立行政法人物質・材料研究機構 | 希土類元素を付活させた酸窒化物蛍光体 |
US6632379B2 (en) * | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
DE10133352A1 (de) * | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE10147040A1 (de) * | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
JP4207489B2 (ja) | 2002-08-06 | 2009-01-14 | 株式会社豊田中央研究所 | α−サイアロン蛍光体 |
JP4072632B2 (ja) | 2002-11-29 | 2008-04-09 | 豊田合成株式会社 | 発光装置及び発光方法 |
JP4066828B2 (ja) | 2003-02-06 | 2008-03-26 | 宇部興産株式会社 | サイアロン系酸窒化物蛍光体およびその製造方法 |
US7074346B2 (en) * | 2003-02-06 | 2006-07-11 | Ube Industries, Ltd. | Sialon-based oxynitride phosphor, process for its production, and use thereof |
JP2004250468A (ja) | 2003-02-18 | 2004-09-09 | Matsushita Electric Ind Co Ltd | 発泡スチロール減容装置 |
JP3914991B2 (ja) * | 2003-11-27 | 2007-05-16 | 独立行政法人物質・材料研究機構 | サイアロン蛍光体の製造方法 |
EP1736525B1 (en) * | 2004-03-22 | 2011-10-05 | Fujikura Ltd. | Oxynitride phosphor and light-emitting device |
KR100841676B1 (ko) * | 2004-07-13 | 2008-06-26 | 가부시키가이샤후지쿠라 | 형광체 및 그 형광체를 이용한 전구색광을 발하는 전구색광발광 다이오드 램프 |
-
2005
- 2005-08-25 EP EP05774683A patent/EP1785465B1/en active Active
- 2005-08-25 CN CNB2005800013250A patent/CN100513517C/zh active Active
- 2005-08-25 KR KR1020067008823A patent/KR100772047B1/ko not_active IP Right Cessation
- 2005-08-25 JP JP2006515442A patent/JP4045299B2/ja active Active
- 2005-08-25 WO PCT/JP2005/015473 patent/WO2006025261A1/ja active Application Filing
- 2005-08-29 US US11/212,559 patent/US7597821B2/en active Active
- 2005-08-30 TW TW094129781A patent/TW200617144A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI315738B (zh) | 2009-10-11 |
KR20060086388A (ko) | 2006-07-31 |
US20070246732A1 (en) | 2007-10-25 |
EP1785465A4 (en) | 2010-03-24 |
JPWO2006025261A1 (ja) | 2008-05-08 |
CN1898358A (zh) | 2007-01-17 |
US7597821B2 (en) | 2009-10-06 |
WO2006025261A1 (ja) | 2006-03-09 |
KR100772047B1 (ko) | 2007-10-31 |
EP1785465A1 (en) | 2007-05-16 |
JP4045299B2 (ja) | 2008-02-13 |
TW200617144A (en) | 2006-06-01 |
EP1785465B1 (en) | 2013-03-27 |
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Address after: Tokyo, Japan Patentee after: FUJIKURA Ltd. Patentee after: NATIONAL INSTITUTE FOR MATERIALS SCIENCE Address before: Tokyo, Japan Patentee before: Fujikura Ltd. Patentee before: Substances of independent administrative legal persons. Material research institutes |
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