CN101831631A - 使用含硅前驱物和原子氧进行高质量流体状硅氧化物的化学气相沉积 - Google Patents

使用含硅前驱物和原子氧进行高质量流体状硅氧化物的化学气相沉积 Download PDF

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CN101831631A
CN101831631A CN201010169884A CN201010169884A CN101831631A CN 101831631 A CN101831631 A CN 101831631A CN 201010169884 A CN201010169884 A CN 201010169884A CN 201010169884 A CN201010169884 A CN 201010169884A CN 101831631 A CN101831631 A CN 101831631A
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precursor
annealing
sediment chamber
silicon
chamber
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N·K·英格尔
Z·袁
P·基
K·萨普瑞
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Applied Materials Inc
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Abstract

本文描述沉积氧化硅层于基材上的方法。该方法可包括提供基材至沉积室、在沉积室外产生氧原子前驱物以及将氧原子前驱物引至沉积室中的多个步骤。该方法亦可包括引进硅前驱物至沉积室中，其中硅前驱物和氧原子前驱物先在沉积室内混合。硅前驱物与氧原子前驱物反应而形成氧化硅层于基材上，所沉积的氧化硅层可经退火处理。本文亦描述用来沉积氧化硅层于基材上的系统。

Description

使用含硅前驱物和原子氧进行高质量流体状硅氧化物的化学气相沉积
本申请是提交于2007年5月30日，申请号为200780000130.3，题为“使用含硅前驱物和原子氧进行高质量流体状硅氧化物的化学气相沉积”的专利申请的分案申请。
技术领域
本文是有关于沉积氧化硅层于基材上的方法以及用来沉积氧化硅层于基材上的系统。
背景技术
随着集成电路上的组件密度不断提高，组件结构的尺寸与间距亦不断缩小。结构间隙和沟渠的宽度变窄会提高这些结构的高度对宽度的比例(即深宽比)。换言的，集成电路组件持续微型化对于缩小组件的横向宽度的幅度大于缩小纵向高度的幅度。
虽然提高组件结构的深宽比可在半导体芯片基材的相同表面积上放置更多的结构，但也会引起制造上的问题。问题之一在于，进行填入制程时难以在不产生空隙(void)或裂缝(seam)的情况下完全填满这些结构中的间隙和沟渠。对于电气隔绝邻近的组件结构来说，以介电材料(如氧化硅)填入间隙和沟渠中是必要步骤。若间隙未填入介电材料，则将有太多电噪声和(或)影响适当操作组件的漏电流。
当间隙宽度较大时(深宽比较小)，较易快速沉积介电材料来填入间隙。沉积材料将覆盖间隙的侧面与底部，并持续由下往上填入，直到填满裂缝或沟渠。然随着深宽比增加，要填满既深且窄的沟渠但又不会在沟渠中形成空隙或裂缝变得越来越困难。
介电层中的空隙与裂缝会引发半导体组件制作与完成组件性质的问题。任意形成在介电层中的空隙与裂缝具有无法预测的大小、形状、位置和分布密度。这将会导致例如蚀刻、研磨、退火等沉积后(post-deposition)处理制程产生不可预期且不一致的处理效果。成品组件中的空隙与裂缝亦会造成组件结构之间隙和沟渠中的介电品质差异。因此组件间将产生电性相互干扰、漏电、甚至短路，以致组件性质不稳且较差。
已开发出多种技术，用来减少于高深宽比结构上沉积介电材料时形成空隙与裂缝的问题。该些技术包括减慢沉积介电材料的速率，使介电材料能更加共形地沉积于沟渠的侧壁与底面。更共形地沉积可减少因沉积材料累积在沟渠的顶部或中间处导致最后封住空隙顶端的情形。然而，减慢沉积速率代表沉积时间增长，因而降低处理效率和生产速率。
另一种控制空隙形成的技术为增进所沉积的介电材料的流动性。流动性较佳的材料可较快填入空隙或裂缝，且可避免其变成填入空间中的永久性缺陷。增进氧化硅介电材料的流动性通常涉及在用来形成氧化层的前驱物混合物中添加水蒸气或过氧化物，例如过氧化氢(H2O2)。水蒸气会于沉积层中形成较多的Si-OH键，使得膜层的流动性提高。然而，不幸的是，于氧化硅沉积过程中增加水气可能对沉积层的性质造成不良影响，包括密度(即提高湿蚀刻速率比(WERR))和介电性质(即增加k值)。
因此，目前仍需要能在间隙、沟渠和其它高深宽比组件结构中沉积无空隙、无裂缝的介电层的介电沉积系统及方法。也需要可快速沉积具流动性的介电材料的系统及方法，且不会恶化填充结构的品质。本发明将提出这些与其它介电层沉积制程的态样。
发明内容
本发的实施例包括数种沉积氧化硅层于基材上的方法。该些方法可包括多个步骤：提供基材至沉积室中、在沉积室外产生氧原子前驱物(atomicoxygen precursor)以及引进氧原子前驱物至沉积室中。该些方法还可包括引进硅前驱物至沉积室中，其中硅前驱物和氧原子前驱物先在沉积室内混合。硅前驱物与氧原子前驱物反应而形成氧化硅层于基材上。该些方法亦可包括退火处理所沉积的氧化硅层。
本发明实施例还包括数种形成氧化硅层于基材上的方法。该些方法可包括提供硅晶片基材至反应室以及在高密度氩等离子体中解离氧分子而产生氧原子前驱物。氧原子前驱物可由位于反应室外的远程等离子体产生室产生。该些方法还可包括在反应室中混合氧原子前驱物与硅前驱物，其中氧原子前驱物与硅前驱物在进入反应室前尚未混合。沉积在基材上的氧化硅层包括氧原子与硅前驱物反应的产物。
本发明实施例更包括沉积氧化硅层于基材上的系统。该系统可包括一沉积室以及一连接沉积室的远程等离子体产生系统，其中该沉积室中可撑托基材，并且该等离子体产生系统是用来产生氧原子前驱物。该系统还可包括一供应硅前驱物至沉积室的硅前驱物源以及一前驱物操作系统(precursor handling system)，用以引导氧原子前驱物与硅前驱物流入沉积室。前驱物操作系统可用来防止氧原子前驱物与硅前驱物进入沉积室前先行混合。
其它实施例和特征将部分说明于下，且其在熟谙此技艺者检阅说明书或实践本发明后将变得明显易懂。由说明书所述的手段、组合和方法可理解及达到本发明的特征与优点。
附图说明
本发明的本质和优点在参阅说明书其余部分与所附图式后将更明显易懂，其中，各图式中相同的组件符号表示类似的组件。在某些例子中，与组件符号相连的下标与连字号代表多个类似组件的其中一个。若文中指出的组件符号，但没有特定指出下标时，则表示其是指所有此类的类似组件。
图1为一流程图，其显示根据本发明实施例形成氧化层于基材上的方法的步骤；
图2绘示根据本发明另一实施例形成氧化层的方法的步骤；
图3绘示根据本发明实施例形成氧化层的方法的步骤，其使用不同的反应室来沉积和固化膜层；
图4为根据本发明实施例利用不含Si-C键的硅前驱物来形成氧化层的步骤流程图；
图5为根据本发明实施例利用含Si-C键的硅前驱物来形成氧化层的步骤流程图；
图6A绘示根据本发明实施例，可用来形成氧化硅层的基材处理系统的垂直剖面；以及
图6B为根据本发明实施例的基材处理系统中系统监测器/控制器组件的示意图。
主要组件符号说明
7气体源                8管线
9混合系统              10系统
11歧管                 12基座
12a平面                12b顶针
13a面板                13b穿孔
14虚线/处理位置        15真空室/处理室
15a室壁                15b室盖组件
16狭长孔               17空间
19内衬                 20室盖
21延伸部               23通道
24关闭阀               25出口
26开口                 32马达
34控制器               36线路
37处理器               38存储器
42阻挡盘               44功率供应器
50a屏幕                50b光笔
60等离子体产生器       64转接器
66隔绝件               70混合装置
72插入件               74狭缝
77三向阀
100、200、300、400、500方法
102、104、106、108、110、112、114、202、204、206、208、210、212、214、216、218、220、222、302、304、306、308、310、312、402、404、406、408、410、502、504、506、508、510、512步骤
具体实施方式
本文描述沉积高流动性的氧化硅层的系统及方法，并且该氧化硅层随后经固化(即退火处理)成高品质的氧化层或填充层。最初形成的氧化物具高流动性而能填满高深宽比之间隙和沟渠(如深宽比大于5∶1)，且不会形成空隙或裂缝。随后执行固化步骤来驱除水气而留下致密的氧化层，该致密氧化层的湿蚀刻速率比(WERR)接近氧化硅层的实际极限值，例如WERR降为约1.8至约1.4。以含碳的硅前驱物所制得的膜层而言，也可形成最初高流动性与固化后具有高品质的低k氧化层。
本发明的方法包括在沉积室/反应室外的远程处产生反应性氧原子。氧原子先在沉积室内与硅前驱物混合，在此即使是在低温与低压下，二者仍会快速反应并沉积氧化硅至基材上。所形成的氧化物富含与硅(Si)键结的氢氧(OH)基，使得该氧化物具高流动性。于填充间隙或沟渠期间，一旦沉积该氧化物，其即便在低温下仍可快速流动而填入初生成的空隙与裂缝。沉积后，固化步骤将许多Si-OH基转化成纯二氧化硅和水蒸气，并将水蒸气逐出沉积层。
在沉积富含Si-C键的低k膜层的实施例中，固化制程可分成将Si-C键水解成Si-OH键以消除碳的第一步骤，以及随后去除氢氧基并驱除所生成的水气的第二步骤。达成方法可包括先进行湿式退火(如高达约950℃的蒸气退火)，其是以水(H2O)将Si-C键水解成Si-OH键，接着进行干式退火(如在约900℃下使用干燥氮气(N2))将Si-OH基转化成氧化硅。本发明的制程与方法实施例将进一步说明于下。
形成氧化层的示例方法
图1为根据本发明实施例，形成氧化层于基材上的方法100的流程图。方法100包括提供基材至沉积室(步骤102)。基材可为半导体晶片，例如直径约300毫米或更小的硅晶片，如直径约为100毫米、150毫米、200毫米、300毫米、400毫米等的硅晶片，并且可包括预先形成的结构、装置组件等。例如，基材可包括具有高深宽比之间隙、沟渠等，如深宽比为5∶1或更包、6∶1或更包、7∶1或更包、8∶1或更高、9∶1或更高、10∶1或更高、11∶1或更高、12∶1或更高等。
方法100也包括在沉积室外的远程处产生氧原子前驱物(步骤104)。可由解离诸如氧分子(O2)、臭氧(O3)、氮氧化合物(如，一氧化氮(NO)、二氧化氮(NO2)、氧化亚氮(N2O)等)、氢氧化合物(如，水(H2O)、过氧化氢(H2O2)等)、碳氧化合物(如，一氧化碳(CO)、二氧化碳(CO2)等)等含氧前驱物和其它含氧前驱物与前驱物组合物来产生氧原子。
解离含氧前驱物来产生氧原子的方式包括热解离、紫外光解离及/或等离子体解离等。等离子体解离可包括在远程等离子体产生室中点燃氦气、氩气、氢气(H2)、氙气、氨气(NH3)等的等离子体，并将氧前驱物引至等离子体中以产生氧原子前驱物。
接着将反应性氧原子等离子体引导到沉积室(步骤106)，并在此与亦引入沉积室的硅前驱物初次混合(步骤108)。极具反应性的氧原子将在如反应温度低于100℃等适当温度和压力(如约0.1托耳至约10托耳；总室压约0.5-6托耳等)下与硅前驱物(以及反应室中的其它沉积前驱物)反应而形成氧化硅层(步骤110)。沉积时，可利用支撑晶片的晶片基座来可调整(即加热或冷却)晶片温度约达0℃至约150℃。
硅前驱物可包括有机硅烷化合物及/或不含碳的硅化合物。不含碳的硅前驱物可包括甲硅烷(SiH4)等化合物。有机硅烷化合物可包括具Si-C键的化合物及/或具Si-O-C键结的化合物。有机硅烷硅前驱物的例子可包括二甲基硅烷(dimethylsilane)、三甲基硅烷(trimethylsilane)、四甲基硅烷(tetramethylsilane)、二乙基硅烷(diethylsilane)、四甲氧基硅烷(tetramethylorthosilicate，TMOS，或称正硅酸四甲酯)、四乙氧基硅烷(tetraethylorthosilicate，TEOS，或称正硅酸四乙酯)、八甲基三硅氧(octamethyltrisiloxane，OMTS)、八甲基环四硅氧(octamethylcyclotetrasiloxane，OMCTS)、四甲基二甲基二甲氧二硅烷(tetramethyldimethyldimethoxydisilane)、四甲基环四硅氧(tetramethylcyclotetrasiloxane，TOMCATS)、DMDMOS、DEMS、甲基三乙氧基硅烷(methyl triethoxysilane，MTES)、苯基二甲基硅烷(phenyldimethylsilane)和苯基硅烷(phenylsilane)等。
硅前驱物在引入沉积室之前或期间可与载气混合。载气可能是不会与形成于基材上的氧化层反应的惰性气体。载气的例子包括氦气、氖气、氩气、氮气(N2)和氢气(H2)等气体。
在方法100的实施例中，氧原子与硅前驱物在引入沉积室之前不先混合。前驱物可经由各自设置于反应室周围的前驱物入口进入反应室。例如，氧原子前驱物可从反应室顶部且位于基材正上方的一个入口或多个入口进入。该入口引导氧前驱物以垂直于基材沉积面的方向流动。同时，硅前驱物可从沉积室侧边的一或多个入口进入。该些入口可引导硅前驱物以近乎平行于沉积面的方向流动。
其它实施例包括透过多端口喷洒头(multi-port showerhead)的个别通口来输送氧原子和硅前驱物。例如，位于基材上方的喷洒头可包括由多个开口所构成的图案，以供前驱物进入沉积室。一开口子群组可供氧原子前驱物使用，而第二开口子群组可供硅前驱物使用。流经不同组开口的前驱物在进入沉积室之前可先彼此隔离。有关前驱物操作设备的型式与设计细节描述于、Lubomirsky等人于公元2006年5月30日提出且标题为「用于介电沟渠填充的处理室(Process chamber for dielectric gapfill)」的共同受让的美国专利临时申请案60/803,499号以及后续与本申请案同日提出申请的非临时申请案(代理人文件编号A11162/T72710)中，其均一并引用供作参考。
当氧原子与硅前驱物于沉积室内反应时，其将形成氧化硅层于基材沉积面上(步骤112)。此初始氧化层具有绝佳的流动性，并可快速移入沉积面的结构中的间隙、沟渠、空隙、裂缝内。如此一来，利用方法100来填充氧化物实质上不会在间隙、沟渠和其它具高深宽比(如深宽比AR约5∶1、6∶1、7∶1、8∶1、9∶1、10∶1、11∶1、和12∶1或更高)的表面结构中产生空隙与裂缝。
尽管不欲结合特定理论，成信硅前驱物与远程产生的氧原子可反应形成具有高浓度硅-氢氧(Si-OH)键的氧化硅。并成信这些键结可增加氧化硅层的流动性。然Si-OH键亦会提高沉积层的湿蚀刻速率比(WERR)和介电常数，因而降低该沉积氧化物的品质以及其做为电绝缘体的效果。因此，借着于沉积后退火(即固化)该氧化硅层来降低Si-OH键的浓度(步骤114)。
该沉积氧化硅层(步骤114)的沉积后退火处理步骤可为单一步骤或多个步骤。单一步骤退火例如可借着在实质干燥的氛围(如干燥氮气、氦气、氩气等)中加热该沉积层约达300℃至约1000℃，例如约600℃至约900℃。退火处理移除了沉积层的水气，并将Si-OH基转化成氧化硅。经退火后的氧化硅层具有较佳的膜层品质(如WERR为约6至约3或更低)和介电性质(如k值近似或等于纯二氧化硅)。
多步骤退火可包括二阶段退火，其中膜层先经湿式退火处理，例如在蒸气中加热膜层至高约达950℃，例如约650℃。接着进行干式退火，此时在实质上不含水气的氛围(如干燥氮气)中加热膜层(如约900℃)。如上所述，多步骤退火可搭配使用有机硅前驱物，以形成实质含碳的氧化硅层，例如具有高密度Si-C键的氧化硅层。第一阶段的湿式退火有助于以Si-OH键取代掉一些Si-C键，干式退火则将Si-OH转化成氧化硅键并驱除膜层中的水气。
除了湿式和干式热退火以外，也可单独或结合使用其它退火技术来退火该氧化硅层(步骤114)。其包括蒸气退火、等离子体退火、紫外光退火、电子束退火及/或微波退火等。
参照图2，其绘示根据本发明另一实施例形成氧化层的方法200的步骤。方法200包括提供基材到反应室(步骤202)及在基材上执行一预处理蚀刻制程(步骤204)。预处理蚀刻可包括等离子体蚀刻，例如使用氩等离子体的高密度等离子体蚀刻，以弄平基材结构并移除表面杂质。
方法200还包括在远程等离子体室中产生等离子体(步骤206)及供应含氧气体(例如氧分子)至等离子体室(步骤208)，以产生氧原子等离子体(步骤210)。方法200的实施例包括在产生氧原子前驱物前，利用远程等离子体室产生的等离子体来预处理蚀刻该基材(步骤204)。完成预处理蚀刻后，将该含氧气体引入远程等离子体室以产生氧原子前驱物(步骤210)。等离子体可于预处理步骤与沉积氧化硅步骤之间间断或在该等步骤之间连续流入反应室。
为了开始沉积氧化层至基材上，将远程产生的氧原子前驱物和硅前驱物(例如TEOS、OMCATS)引进反应室(步骤212、214)。在反应室中，二种前驱物发生反应(步骤216)，并形成氧化硅层于基材上(步骤218)。氧化层的形成速率可为约250埃
Figure GSA00000098006200091
/分钟至约2微米(μm)/分钟。方法200的实施例包括使用含碳的硅前驱物，其加入显著量的碳到氧化层中，例如Si-C键及/或Si-O-C键。故，在方法200中执行二阶段退火，其先在第一退火温度下进行蒸气退火(步骤220)，接着在第二退火温度下进行干式退火(步骤222)。第一退火温度(例如约600℃至约950℃)可低于第二退火温度(例如约900℃至约1000℃；如约950℃)。
图3绘示根据本发明实施例形成氧化层的方法300，其使用不同的反应室来沉积和固化膜层。方法300包括提供基材至沉积室(步骤302)及引导氧原子前驱物和硅前驱物至反应室(步骤304、306)。前驱物在沉积室内反应形成氧化硅层于基材上(步骤308)。
此时，使前驱物停止流入沉积室，并移出基材。接着将基材移至独立的退火室(步骤310)，以退火该氧化硅层(步骤312)。基材可在真空及/或惰性环境下从沉积室传送到退火室，以免微粒、氧气或其它污染物接触沉积层。例如，沉积室与退火室可为用来在晶片基材上形成半导体组件结构、金属前介电质(PMD)、层间介电质(ILD)、金属化结构、覆盖层的大型群组反应室中的一员。可在控制环境下由自动化机器(例如机械手臂、传送带等)将晶片从一反应室传送到另一反应室。
参照图4及图5，其分别绘示采用以及不用含碳的硅前驱物来形成氧化硅层的方法实施例。图4显示利用不含Si-C键的硅前驱物形成氧化物层的方法400的步骤。方法400包括提供基材至沉积室(步骤402)以及引导氧原子前驱物和不含碳的硅前驱物至反应室(步骤404、406)。该等前驱物在沉积室内反应形成氧化硅层于基材上(步骤408)，接着进行退火处理。氧化硅层(步骤410)的退火处理可为在干燥氮气氛围、约800℃至约1000℃下进行单一步骤退火。由于所用的硅前驱物不含碳，因此所沉积的氧化物的碳含量很低，故不需进行蒸气退火来移除碳。
图5的方法500则采用含碳的硅前驱物(例如有机硅烷)，因此沉积于基材上的初始氧化硅层含有一定量的碳。类似图4，图5的方法500包括提供基材至沉积室(步骤502)以及引导氧原子前驱物至反应室(步骤504)。但所引入的硅前驱物为含碳的有机硅烷前驱物(步骤506)。氧原子与有机硅烷前驱物反应形成含碳的氧化硅层于基材上(步骤508)。沉积后，进行二阶段退火，其先施行第一退火处理以降低氧化硅层的碳含量(步骤510)，接着施行第二退火处理以减少膜层中的水气，例如水(H2O)和Si-OH(步骤512)。第一退火处理可包括至少水解部分Si-C键的蒸气退火，及/或将较大有机分子分解成较小分子的等离子体退火、电子束退火或紫外光退火。第二退火处理可进一步将较小的碳分子氧化成一氧化碳(CO)、二氧化碳(CO2)、甲酸等，然后随着水气一起移除。在一些实施例中，第一退火处理为蒸气退火，第二退火处理为干燥氮气退火。
应理解的是，图1至图5绘示与说明的方法仅为根据本发明可用来沉积氧化层于基材上的多个实施例中的一部分。其它实施例可包括额外步骤和不同的步骤顺序以形成氧化层。例如，虽然图1中显示氧原子比硅前驱物还要早引进反应室中，但方法100也可同时引进二者、或者先引进硅前驱物、再引进氧原子前驱物。叙述完本发明的部分实施例后，以下将说明基材处理系统的实施例。
示例的基材处理系统
可用于本发明实施例的沉积系统包括高密度等离子体化学气相沉积(H DP-CVD)系统、等离子体加强化学气相沉积(PECVD)系统、次大气压化学气相沉积(SACVD)系统、热化学气相沉积系统和其它类型的系统等。可用于本发明实施例的CVD系统实例包括CENTURA ULTIMATM HDP-CVD反应室/系统和PRODUCERTM PECVD反应室/系统，其皆从美国加州圣克拉拉市的应用材料公司(Applied Materials，Inc.)取得。
可经修改而适用于本发明实施例的基材处理系统描述于共同受让的美国专利证书号6,387,207与6,830,624的专利案，其皆引用于本文中以供参考。图6A绘示CVD系统10的垂直剖面，该系统10包括具室壁15a和室盖组件15b的真空室或处理室15。
CVD系统10包含一气体分配歧管11，用以将制程气体分散至位在处理室15中间的加热基座12上的基材(未绘示)。气体分配歧管11可由导电材料组成，以做为用来形成电容等离子体的电极。处理时，例如半导体晶片等基材置于基座12的平坦或些微凸起的表面12a上。基座12可控制地在较低的装载/卸载位置(如图6A所示)与较高的处理位置(以图6A的虚线14表示)之间移动，并且该处理位置邻近歧管11。中央板(未绘示)包括多个传感器，用以提供晶片位置的信息。
沉积气体和载气通过传统平面环形气体分配面板13a的穿孔13b引入处理室15中。更明确而言，沉积制程气体经由入口歧管11、传统多孔阻挡盘42和气体分配面板13a的穿孔13b流入反应室。
到达歧管11之前，沉积气体与载气从气体源7经由气体供应管线8输入到混合系统9，沉积气体与载气在此混合，随后输送到歧管11。各制程气体的供应管线一般包括(i)数个安全关闭阀(未绘示)，其可自动或手动停止制程气体流入反应室，以及(ii)多个流量控制器(亦未绘示)，用以测量气体流经供应管线的流量。若制程使用有毒气体，则会在各个气体供应管在线设置数个安全关闭阀。
CVD系统10执行的沉积制程可为热制程或等离子体加强制程。就等离子体加强制程而言，RF功率供应器44施加电功率于气体分配面板13a与基座12之间，用以激发制程混合气体而在面板13a与基座12间的圆柱形区域形成等离子体。此区域在此亦称为「反应区域」。等离子体成分进行反应以沉积一预定膜层至基座12上的半导体晶片表面。RF功率供应器44为混合频率的RF功率供应器，其一般以13.56MHz的RF高频(RF1)与360kHz的RF低频(RF2)供应电功率，用以促进分解引进真空室15中的反应物种。就热制程而言，则不采用RF功率供应器44，且制程混合气体将进行热反应而沉积一预定膜层至基座12上的半导体晶片表面，基座12为电阻式加热来提供反应热能。
在等离子体加强沉积制程期间，等离子体加热整个处理系统10，包括包围排放通道23与关闭阀24的主体室壁15a。当等离子体未开启或进行热沉积制程时，一热液体循环遍及处理室15的室壁15a，以保持处理室的升温状态。室壁15a中的其它通道则未绘示。用来加热室壁15a的流体包括典型的流体类型，即以水性(water-based)的乙二醇(ethylene glycol)或以油性的热传流体。此加热动作(指由「热交换」加热)可大幅减少或消除非期望的反应产物的凝结作用，并有助于减少制程气体与其它污染物的挥发性产物，因为若其凝结在冷却的真空通道壁上且在未流入气体时流回处理室，可能会污染制程。
未沉积成膜层的剩余混合气体(包括反应副产物)由真空泵(未绘示)排出处理室15。更明确而言，气体经由围绕反应区域的环状狭长孔16排放到环状排放空间17。环状狭长孔16和空间17是由圆柱形室壁15a顶部(包括壁面上的上介电内衬19)与圆形室盖20底部间的间隙所定义。360度环形对称与均匀配置的狭长孔16和空间17可使制程气体均匀流到晶片上方，故可在晶片上沉积出均匀的膜层。
离开排放空间17后，气体流经排放空间17的侧向延伸部21下方、通过一窗口口(未绘示)、并流过一向下延伸的气体通道23、一真空关闭阀24(其主体合并于下室壁15a)并且流入透过前置管线(未绘示)连接到外部真空泵(未绘示)的排放出口25。
基座12的晶片支撑盘(较佳为铝、陶瓷或其组合物)利用埋设式的在单一循环加热器组件来进行电阻式加热，其以平行同心圆形式排列成完整两圈。加热器组件的外部份邻接支撑盘周围而延伸，其内部份沿着半径较小的同心圆延伸。加热器组件的线路穿过基座12主干。
一般来说，任一个或所有的处理室内衬、气体入口歧管面板和各种反应器硬件是由诸如铝、阳极铝或陶瓷构成。此类CVD设备的例子描述于共同受让的美国专利证书号5,558,717、标题为「CVD处理室(CVDprocessing chamber)」、且颁予Zhao等人的专利案，其一并引用于本文中以供参考。
当由机器手臂叶片(未绘示)经由系统10侧边的插入/移出开口26传送晶片进出处理室15主体时，升降机制与马达32(图6A)抬高及降低加热器基座组件12和其晶片顶针12b。马达32抬起及降下基座12至处理位置14与较低的晶片装载位置。马达、连接至供应管线8的阀或流量控制器、气体输送系统、节流阀、RF功率供应器44和处理室与基材加热系统全受控于控制线路36上的系统控制器，图中仅显示部分控制线路。控制器34依据光学传感器的回馈讯号来判别可移动机械构件的位置，例如节流阀和基底(susceptor)，其在控制器34的控制下由适当的马达移动。
在此示范实施例中，系统控制器包括硬盘机(存储器38)、软盘机和处理器37。处理器含有单板计算机(SBC)、模拟与数字输入/输出板、接口板和步进马达控制板。CVD系统10的各种零件皆符合用来规范各种板、卡笼(card cage)和连接器的尺寸与种类的Versa Modular European(VME)标准。VME标准亦订定具16位数据总线与24位地址总线的总线结构。
系统控制器34控制CVD机器的所用动作。系统控制器执行系统控制软件，其为储存于计算机可读取媒体(如存储器38)中的计算机程序。较佳地，存储器38为硬盘机，但存储器38也可为其它类型的存储器。计算机程序包括用来指定特定制程的时序、混合气体、处理室压力、处理室温度、RF功率大小、基座位置和其它参数的多组指令。其它储存于它种存储器装置(例如包括软盘或其它适合的驱动器)中的计算机程序亦可用来操作控制器34。
沉积膜层于基材上的制程或清洗处理室15的制程可实施成为控制器34执行的计算机程序产品。计算机程序码可以任一传统计算机可读取程序语言编写，例如68000汇编语言、C、C++、Pascal、Fortran或其它语言。适当的程序代码利用传统文字编辑器输入于单一档案或多个档案中，并储存或内建在计算机可用的媒体中，如计算机的存储器系统。若输入码文字为高级语言，则进行编码，并将产生的编译程序码连结至预先编译的WindowsTM书库例行程序(WindowsTM library route)的目的码。为执行已连结的编译目的码，系统使用者启动该目的码，使计算机系统加载存储器中的编码。自此CPU读取并执行编码，以进行程序中所决定的任务。
如图6B所示，使用者与控制器34间的接口为CRT屏幕50a和光笔50b；图6B为基材处理系统中系统屏幕和CVD系统10的简示图，其可包括一或多个处理室。在一较佳实施例中为采用两个屏幕50a，其一放置于无尘室壁面供操作员使用，另一放置于壁面后方供维修技师使用。二屏幕50a同时显示相同的信息，但只有一个光笔50b可用。光笔50b利用笔尖的感光器侦测CRT显示器发射的光线。为选择特定画面或功能，操作员触碰显示画面的指定区域，并按压光笔50b上的按钮。触碰区域改变其反白标示颜色或显示新的选单或画面，以确定光笔与显示画面的沟通无碍。亦可额外使用其它诸如键盘、鼠标或其它点触或通信装置等输入装置或代替光笔50b，以提供使用者与处理器34之间的沟通管道。
图6A显示装设于处理室15的室盖组件15b上的远程等离子体产生器60，处理室15包括气体分配面板13a和气体分配歧管11。最好如图6A所示，架设转接器64将远程等离子体产生器60装设在室盖组件15b上。转接器64通常由金属构成。混合装置70耦接于气体分配歧管11的上游处(图6A)。混合装置70包括位于混合区块的狭缝74内的混合插入件72，用以混合制程气体。陶瓷隔绝件66放置在架设转接器64与混合装置70之间(图6A)。陶瓷隔绝件66可由陶瓷材料制成，例如三氧化二铝(Al2O3)(纯度99％)、Teflon
Figure GSA00000098006200141
等。安装时，混合装置70和陶瓷隔绝件66可构成室盖组件15b的一部分。隔绝件66将金属转接器64从混合装置70与气体分配歧管11隔离出来，以减少在室盖组件15b中形成二次等离子体，此将进一步详述于下。三向阀77控制制程气体直接或经由远程等离子体产生器60流入处理室15。
远程等离子体产生器60较佳为精巧独立的单元，其便于装设在室盖组件15b上，并且不费时费工即可修改并安装至现有处理室上。适合的单元范例为ASTRON
Figure GSA00000098006200142
产生器，其可从美国麻萨诸塞州Woburn市的应用科学与科技公司(Applied Science and Technology，Inc.)取得。ASTRON
Figure GSA00000098006200143
产生器利用低场超环面等离子体来解离制程气体。在一实施例中，等离子体可解离制程气体(包括如三氟化氮(NF3)的含氟气体)和诸如氩气等载气，以产生自由氟离子来清洗处理室15中的沉积物。
根据上述数个实施例，熟谙此技艺者将可理解各种润饰、更动与均等物皆不脱离本发明的精神与范围。另外，本文中未对一些熟知的制程和组件进行描述是为了避免不必要的混淆。因此，以上说明内容不应用来限制本发明的保护范围。
应理解到，除非内文特别指明，否则文中所提供的数值范围亦明确揭露介于此范围上限与下限之间的每个数值到下限单位的十分的一位数。介于任一所述值之间，或介于所述范围内任一数值与该范围内的其它所述值或区间值之间的较小范围也包含在内。较小范围的上限与下限可各自涵盖在此范围内或排除在外，且本发明亦包含每一种包含较小范围的上限及/或下限或不含上下限的范围，取决于论述范围中特别排除的限制。当论述范围包括限制的一或二者时，排除这些限制的范围亦包含在内。
除非内文另清楚指明，否则本文和所附申请专利范围中使用的单数形式「一」与「该」亦包括多个的意思。例如，「一制程」可包括数个此类制程、「该前驱物」包括一或多个前驱物和熟谙此技艺者知晓的均等物。
再者，本说明书和以下申请专利范围采用的「包含」与「包括」等字词意指存在有多个所述的特征、整数、组件或步骤，但并不排除另有一或多个其它特征、整数、组件、步骤、动作或群组。

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1.一种沉积氧化硅层于一基材上的系统，该系统至少包含：
一沉积室，其内撑托该基材；
一远程等离子体产生系统，其连接至该沉积室，其中该等离子体产生系统是用来产生一氧原子前驱物；
一硅前驱物源，用以供应一硅前驱物至该沉积室；以及
一前驱物操作系统，用以引导该氧原子前驱物与该硅前驱物流入该沉积室，其中该前驱物操作系统防止该氧原子前驱物与该硅前驱物进入该沉积室前先行混合。
2.如权利要求1所述的系统，其中该远程等离子体产生系统为一高密度等离子体产生系统。
3.如权利要求2所述的系统，其中该系统包含一氩气源和一氧气分子源，并且该氩气源和该氧气分子源耦接至该远程等离子体产生系统。
4.如权利要求1所述的系统，其中来自一载气源的一载气在进入该沉积室之前先与该硅前驱物混合。
5.如权利要求1所述的系统，其中该前驱物操作系统包含形成于该沉积室中的一第一入口和一第二入口，其中该第一入口与该第二入口互相垂直，并且该氧原子前驱物从该第一入口进入该沉积室，该硅前驱物从该第二入口进入该沉积室。
6.如权利要求1所述的系统，其中该系统包含一退火系统，用以退火该氧化硅层。
7.如权利要求6所述的系统，其中该退火系统包含热退火系统、蒸气退火系统、等离子体退火系统、紫外光退火系统、电子束退火系统或微波退火系统。
8.如权利要求6所述的系统，其中该氧化硅层是在该沉积室中进行退火。
9.如权利要求1所述的系统，其中该系统包含一高密度等离子体化学气相沉积(HDP-CVD)系统。
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US20070281496A1 (en) 2007-12-06
US7825038B2 (en) 2010-11-02
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