CN101523296B - 精细图案形成方法及用于此法的抗蚀基板处理溶液 - Google Patents

精细图案形成方法及用于此法的抗蚀基板处理溶液 Download PDF

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Publication number
CN101523296B
CN101523296B CN2007800383435A CN200780038343A CN101523296B CN 101523296 B CN101523296 B CN 101523296B CN 2007800383435 A CN2007800383435 A CN 2007800383435A CN 200780038343 A CN200780038343 A CN 200780038343A CN 101523296 B CN101523296 B CN 101523296B
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CN
China
Prior art keywords
pattern
resist
resist pattern
treatment solution
present
Prior art date
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Expired - Fee Related
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CN2007800383435A
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English (en)
Chinese (zh)
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CN101523296A (zh
Inventor
能谷刚
岛崎龙太
小林政一
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Merck Patent GmbH
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AZ Electronic Materials Japan Co Ltd
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Publication of CN101523296A publication Critical patent/CN101523296A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/11—Vinyl alcohol polymer or derivative
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2007800383435A 2006-10-19 2007-10-12 精细图案形成方法及用于此法的抗蚀基板处理溶液 Expired - Fee Related CN101523296B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006285312A JP5000260B2 (ja) 2006-10-19 2006-10-19 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
JP285312/2006 2006-10-19
PCT/JP2007/069977 WO2008047719A1 (en) 2006-10-19 2007-10-12 Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method

Publications (2)

Publication Number Publication Date
CN101523296A CN101523296A (zh) 2009-09-02
CN101523296B true CN101523296B (zh) 2012-05-30

Family

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CN2007800383435A Expired - Fee Related CN101523296B (zh) 2006-10-19 2007-10-12 精细图案形成方法及用于此法的抗蚀基板处理溶液

Country Status (8)

Country Link
US (1) US8101333B2 (enExample)
EP (1) EP2088470B1 (enExample)
JP (1) JP5000260B2 (enExample)
KR (1) KR20090082232A (enExample)
CN (1) CN101523296B (enExample)
MY (1) MY149342A (enExample)
TW (1) TWI417682B (enExample)
WO (1) WO2008047719A1 (enExample)

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JP5270840B2 (ja) * 2007-01-23 2013-08-21 東京応化工業株式会社 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法
JP5270839B2 (ja) * 2007-01-23 2013-08-21 東京応化工業株式会社 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法
JP5154395B2 (ja) * 2008-02-28 2013-02-27 東京エレクトロン株式会社 半導体装置の製造方法及びレジスト塗布・現像処理システム
JP5306755B2 (ja) * 2008-09-16 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 基板処理液およびそれを用いたレジスト基板処理方法
JP5705669B2 (ja) 2011-07-14 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法
JP5758263B2 (ja) 2011-10-11 2015-08-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
SG11201504607QA (en) 2012-12-14 2015-07-30 Basf Se Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
JP6157151B2 (ja) * 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6459759B2 (ja) * 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤
KR101658066B1 (ko) * 2014-07-24 2016-09-20 금호석유화학 주식회사 미세 패턴 형성용 코팅 조성물 및 이를 이용한 미세 패턴 형성 방법
KR102480056B1 (ko) * 2014-10-17 2022-12-21 도오꾜오까고오교 가부시끼가이샤 레지스트 패턴 형성 방법
JP6455370B2 (ja) * 2014-10-30 2019-01-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6455369B2 (ja) * 2014-10-30 2019-01-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6503206B2 (ja) 2015-03-19 2019-04-17 東京応化工業株式会社 レジストパターン修復方法
JP6642809B2 (ja) 2015-03-31 2020-02-12 日産化学株式会社 レジストパターン被覆用塗布液及びパターンの形成方法
JP6520753B2 (ja) * 2016-02-19 2019-05-29 信越化学工業株式会社 ポジ型レジスト材料、及びパターン形成方法
KR101806748B1 (ko) 2016-12-02 2017-12-07 에스케이하이닉스 주식회사 포토레지스트 패턴 코팅용 조성물 및 이를 이용한 미세패턴 형성 방법

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Also Published As

Publication number Publication date
TW200832087A (en) 2008-08-01
US8101333B2 (en) 2012-01-24
JP2008102348A (ja) 2008-05-01
EP2088470A4 (en) 2010-10-20
CN101523296A (zh) 2009-09-02
MY149342A (en) 2013-08-30
WO2008047719A1 (en) 2008-04-24
EP2088470B1 (en) 2017-10-04
TWI417682B (zh) 2013-12-01
JP5000260B2 (ja) 2012-08-15
EP2088470A1 (en) 2009-08-12
US20100021700A1 (en) 2010-01-28
KR20090082232A (ko) 2009-07-29

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