MY149342A - Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method - Google Patents

Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method

Info

Publication number
MY149342A
MY149342A MYPI20091007A MYPI20091007A MY149342A MY 149342 A MY149342 A MY 149342A MY PI20091007 A MYPI20091007 A MY PI20091007A MY PI20091007 A MYPI20091007 A MY PI20091007A MY 149342 A MY149342 A MY 149342A
Authority
MY
Malaysia
Prior art keywords
pattern
resist
formation
resist substrate
resist pattern
Prior art date
Application number
MYPI20091007A
Other languages
English (en)
Inventor
Noya Go
Shimazaki Ryuta
Kobayashi Masakazu
Original Assignee
Az Electronic Materials Ip Japan K K
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Ip Japan K K filed Critical Az Electronic Materials Ip Japan K K
Publication of MY149342A publication Critical patent/MY149342A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/11—Vinyl alcohol polymer or derivative
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
MYPI20091007A 2006-10-19 2007-10-12 Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method MY149342A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006285312A JP5000260B2 (ja) 2006-10-19 2006-10-19 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液

Publications (1)

Publication Number Publication Date
MY149342A true MY149342A (en) 2013-08-30

Family

ID=39313950

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20091007A MY149342A (en) 2006-10-19 2007-10-12 Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method

Country Status (8)

Country Link
US (1) US8101333B2 (enExample)
EP (1) EP2088470B1 (enExample)
JP (1) JP5000260B2 (enExample)
KR (1) KR20090082232A (enExample)
CN (1) CN101523296B (enExample)
MY (1) MY149342A (enExample)
TW (1) TWI417682B (enExample)
WO (1) WO2008047719A1 (enExample)

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JP5270840B2 (ja) * 2007-01-23 2013-08-21 東京応化工業株式会社 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法
JP5270839B2 (ja) * 2007-01-23 2013-08-21 東京応化工業株式会社 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法
JP5154395B2 (ja) * 2008-02-28 2013-02-27 東京エレクトロン株式会社 半導体装置の製造方法及びレジスト塗布・現像処理システム
JP5306755B2 (ja) * 2008-09-16 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 基板処理液およびそれを用いたレジスト基板処理方法
JP5705669B2 (ja) 2011-07-14 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法
JP5758263B2 (ja) * 2011-10-11 2015-08-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
CN104871289B (zh) 2012-12-14 2017-10-10 巴斯夫欧洲公司 包含表面活性剂和疏水化剂的组合物在处理线间距尺寸为50nm或更低的图案化材料时避免图案崩塌的用途
JP6157151B2 (ja) * 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6459759B2 (ja) * 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤
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TWI682250B (zh) * 2014-10-17 2020-01-11 日商東京應化工業股份有限公司 光阻圖型形成方法
JP6455369B2 (ja) * 2014-10-30 2019-01-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6455370B2 (ja) * 2014-10-30 2019-01-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6503206B2 (ja) 2015-03-19 2019-04-17 東京応化工業株式会社 レジストパターン修復方法
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Also Published As

Publication number Publication date
US20100021700A1 (en) 2010-01-28
TW200832087A (en) 2008-08-01
EP2088470B1 (en) 2017-10-04
EP2088470A4 (en) 2010-10-20
CN101523296A (zh) 2009-09-02
JP2008102348A (ja) 2008-05-01
US8101333B2 (en) 2012-01-24
EP2088470A1 (en) 2009-08-12
KR20090082232A (ko) 2009-07-29
TWI417682B (zh) 2013-12-01
CN101523296B (zh) 2012-05-30
WO2008047719A1 (en) 2008-04-24
JP5000260B2 (ja) 2012-08-15

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