PL1591557T3 - Sposób nakładania powłok za pomocą urządzeń pracujących w linii ciągłej - Google Patents

Sposób nakładania powłok za pomocą urządzeń pracujących w linii ciągłej

Info

Publication number
PL1591557T3
PL1591557T3 PL04023123T PL04023123T PL1591557T3 PL 1591557 T3 PL1591557 T3 PL 1591557T3 PL 04023123 T PL04023123 T PL 04023123T PL 04023123 T PL04023123 T PL 04023123T PL 1591557 T3 PL1591557 T3 PL 1591557T3
Authority
PL
Poland
Prior art keywords
substrate
chamber
coating method
line apparatus
coating
Prior art date
Application number
PL04023123T
Other languages
English (en)
Inventor
Andreas Pflug
Bernd Szyszka
Albert Kastner
Michael Geisler
Thomas Leipnitz
Jürgen Bruch
Original Assignee
Applied Mat Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Mat Gmbh & Co Kg filed Critical Applied Mat Gmbh & Co Kg
Publication of PL1591557T3 publication Critical patent/PL1591557T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
PL04023123T 2004-04-26 2004-09-29 Sposób nakładania powłok za pomocą urządzeń pracujących w linii ciągłej PL1591557T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004020466A DE102004020466A1 (de) 2004-04-26 2004-04-26 Verfahren zum Beschichten von Substraten in Inline-Anlagen
EP04023123A EP1591557B1 (de) 2004-04-26 2004-09-29 Verfahren zum Beschichten von Substraten in Inline-Anlagen

Publications (1)

Publication Number Publication Date
PL1591557T3 true PL1591557T3 (pl) 2008-10-31

Family

ID=34926762

Family Applications (1)

Application Number Title Priority Date Filing Date
PL04023123T PL1591557T3 (pl) 2004-04-26 2004-09-29 Sposób nakładania powłok za pomocą urządzeń pracujących w linii ciągłej

Country Status (11)

Country Link
US (1) US20050236276A1 (pl)
EP (1) EP1591557B1 (pl)
JP (1) JP2005314795A (pl)
KR (1) KR100789483B1 (pl)
CN (1) CN1690247A (pl)
AT (1) ATE392494T1 (pl)
DE (2) DE102004020466A1 (pl)
ES (1) ES2305639T3 (pl)
PL (1) PL1591557T3 (pl)
PT (1) PT1591557E (pl)
TW (1) TWI265204B (pl)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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EP1698715A1 (de) * 2005-03-03 2006-09-06 Applied Films GmbH & Co. KG Anlage zum Beschichten eines Substrats und Einschubelement
EP1840936A1 (de) * 2006-03-29 2007-10-03 Applied Materials GmbH & Co. KG Sputterkammer zum Beschichten eines Substrats
DE102006061324B4 (de) * 2006-06-20 2008-07-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Regelung eines reaktiven Hochleistungs-Puls-Magnetronsputterprozesses und Vorrichtung hierzu
DE102006036403B4 (de) * 2006-08-02 2009-11-19 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung
KR20090116809A (ko) * 2007-03-02 2009-11-11 오를리콘 트레이딩 아크티엔게젤샤프트, 트뤼프바흐 진공 코팅 장치
JP2013089409A (ja) * 2011-10-17 2013-05-13 Sen Corp イオン注入装置及びイオン注入方法
CN102492934B (zh) * 2011-12-26 2016-05-11 常州二维碳素科技股份有限公司 一种制备石墨烯薄膜的装置、方法及所得石墨烯薄膜
US8963107B2 (en) * 2012-01-12 2015-02-24 Axcelis Technologies, Inc. Beam line design to reduce energy contamination
DE102012103710A1 (de) * 2012-04-27 2013-10-31 Roth & Rau Ag Modulare Durchlauf-Plasmabearbeitungsanlage
DE102013107167B4 (de) 2013-07-08 2017-10-05 Von Ardenne Gmbh Anordnung zum Schutz von Einbauten in Vakuumkammern
JP5970583B2 (ja) * 2015-04-23 2016-08-17 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
DE102015117753A1 (de) * 2015-10-19 2017-04-20 Von Ardenne Gmbh Vakuumschleusenanordnung, Vakuumanordnung und Verfahren
CN110438463A (zh) * 2019-07-29 2019-11-12 光驰科技(上海)有限公司 一种解决镀膜产品横向均匀性的方法及其镀膜装置
CN110819963B (zh) * 2019-12-16 2022-05-17 凯盛光伏材料有限公司 一种提高薄膜太阳能电池薄膜均匀性的方法
FR3120125B1 (fr) 2021-02-25 2023-09-08 Saint Gobain Dispositif de mesure de pression vide secondaire et système embarqué pour mesure de pression de vide résiduel
CN115406489B (zh) * 2022-11-01 2023-01-24 山东申华光学科技有限公司 一种镀膜机镀膜的监测预警方法及系统

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JP2658840B2 (ja) * 1993-12-01 1997-09-30 日本電気株式会社 プロセスシミュレータおよびこれを用いたｃｖｄ装置およびプロセスシミュレーション方法
JP2910611B2 (ja) * 1995-03-30 1999-06-23 日本電気株式会社 形状シミュレーション方法
JP2806349B2 (ja) * 1996-03-13 1998-09-30 日本電気株式会社 スパッタ装置シミュレーション方法
JP2950253B2 (ja) 1996-10-21 1999-09-20 日本電気株式会社 シミュレーション方法
US5882413A (en) * 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
JP3107023B2 (ja) * 1997-11-28 2000-11-06 日本電気株式会社 スパッタ装置シミュレーション方法
US6151532A (en) * 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
JP2888240B1 (ja) * 1998-03-26 1999-05-10 日本電気株式会社 スパッタ形状シミュレーション方法
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US8032348B2 (en) * 2003-09-30 2011-10-04 Tokyo Electron Limited System and method for using first-principles simulation to facilitate a semiconductor manufacturing process

Also Published As

Publication number Publication date
EP1591557B1 (de) 2008-04-16
KR20050103450A (ko) 2005-10-31
ES2305639T3 (es) 2008-11-01
US20050236276A1 (en) 2005-10-27
TWI265204B (en) 2006-11-01
KR100789483B1 (ko) 2007-12-31
PT1591557E (pt) 2008-07-25
CN1690247A (zh) 2005-11-02
DE502004006837D1 (de) 2008-05-29
TW200535269A (en) 2005-11-01
DE102004020466A1 (de) 2005-11-17
ATE392494T1 (de) 2008-05-15
EP1591557A1 (de) 2005-11-02
JP2005314795A (ja) 2005-11-10

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