WO2004068538A3 - Object-moving method, object-moving apparatus and production process using the method - Google Patents

Object-moving method, object-moving apparatus and production process using the method Download PDF

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Publication number
WO2004068538A3
WO2004068538A3 PCT/JP2004/000963 JP2004000963W WO2004068538A3 WO 2004068538 A3 WO2004068538 A3 WO 2004068538A3 JP 2004000963 W JP2004000963 W JP 2004000963W WO 2004068538 A3 WO2004068538 A3 WO 2004068538A3
Authority
WO
WIPO (PCT)
Prior art keywords
moving
production process
moving means
deposit
moving apparatus
Prior art date
Application number
PCT/JP2004/000963
Other languages
French (fr)
Other versions
WO2004068538A2 (en
Inventor
Toshiaki Aiba
Original Assignee
Canon Kk
Toshiaki Aiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk, Toshiaki Aiba filed Critical Canon Kk
Priority to US10/542,145 priority Critical patent/US7173253B2/en
Publication of WO2004068538A2 publication Critical patent/WO2004068538A2/en
Publication of WO2004068538A3 publication Critical patent/WO2004068538A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/002—Apparatus for assembling MEMS, e.g. micromanipulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3114—Machining
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Abstract

A method of moving an object (3) comprises a step of fixing the object to an object-moving means (7,8), a step of moving the object to a prescribed position by the object-moving means, and a step of releasing the object from the object-moving means; wherein the fixing step comprises forming a deposit (6), for fixation of the object (3) to the object-moving means (8) by applying a first corpuscular beam (1) in a first gas (9) to form a deposit; and the releasing step comprises etching the deposit (6) by applying a second corpuscular beam in contact with a second gas.
PCT/JP2004/000963 2003-01-31 2004-01-30 Object-moving method, object-moving apparatus and production process using the method WO2004068538A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/542,145 US7173253B2 (en) 2003-01-31 2004-01-30 Object-moving method, object-moving apparatus, production process and produced apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-023819 2003-01-31
JP2003023819 2003-01-31

Publications (2)

Publication Number Publication Date
WO2004068538A2 WO2004068538A2 (en) 2004-08-12
WO2004068538A3 true WO2004068538A3 (en) 2004-10-21

Family

ID=32820743

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/000963 WO2004068538A2 (en) 2003-01-31 2004-01-30 Object-moving method, object-moving apparatus and production process using the method

Country Status (2)

Country Link
US (1) US7173253B2 (en)
WO (1) WO2004068538A2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7804068B2 (en) 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
US9012867B2 (en) 2003-10-16 2015-04-21 Carl Zeiss Microscopy, Llc Ion sources, systems and methods
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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US7504639B2 (en) 2003-10-16 2009-03-17 Alis Corporation Ion sources, systems and methods
US7488952B2 (en) 2003-10-16 2009-02-10 Alis Corporation Ion sources, systems and methods
US7485873B2 (en) 2003-10-16 2009-02-03 Alis Corporation Ion sources, systems and methods
US7601953B2 (en) 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US7495232B2 (en) 2003-10-16 2009-02-24 Alis Corporation Ion sources, systems and methods
US7368727B2 (en) 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
DE602006015768D1 (en) 2006-02-23 2010-09-09 Integrated Circuit Testing Particle beam device with ozone source
EP1879011B1 (en) * 2006-07-10 2013-01-30 Fei Company Method for separating a minute sample from a work piece
US7615745B2 (en) * 2006-07-10 2009-11-10 Fei Company Method for separating a minute sample from a work piece
US8143732B2 (en) * 2008-12-15 2012-03-27 Caterpillar Inc. Stationary genset power system having turbo-compounding
US9312095B2 (en) * 2010-03-24 2016-04-12 Brown University Method and system for automating sample preparation for microfluidic cryo TEM
US9355813B2 (en) * 2010-03-24 2016-05-31 Brown University Microfluidic blotless cryo TEM device and method
US20140103582A1 (en) * 2012-10-15 2014-04-17 International Business Machines Corporation Nano-Pipet Fabrication
CN103723672A (en) * 2012-10-15 2014-04-16 国际商业机器公司 Device containing nano-pipet and fabrication method thereof
CN104792583B (en) * 2014-01-17 2018-06-26 中芯国际集成电路制造(上海)有限公司 A kind of preparation method of TEM sample
JP6585280B2 (en) 2016-03-18 2019-10-02 株式会社日立製作所 MEMS manufacturing method and MEMS manufacturing apparatus
CN109434818A (en) * 2018-10-30 2019-03-08 襄阳市科瑞杰医疗器械有限公司 Manipulator sampling mechanism and microscope

Citations (2)

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JPH09185950A (en) * 1996-11-01 1997-07-15 Seiko Instr Inc Working method for focusing ion beam working device
JPH11258130A (en) * 1998-03-10 1999-09-24 Hitachi Ltd Apparatus for producing sample and method for producing sample

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JP2001272316A (en) 2000-03-28 2001-10-05 Matsushita Electric Ind Co Ltd Sample preparation method for transmission electron microscope
WO2004075268A1 (en) * 2003-02-19 2004-09-02 Nikon Corporation Transfer method, exposure method and exposure device, and device manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09185950A (en) * 1996-11-01 1997-07-15 Seiko Instr Inc Working method for focusing ion beam working device
JPH11258130A (en) * 1998-03-10 1999-09-24 Hitachi Ltd Apparatus for producing sample and method for producing sample

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
MINAMI K ET AL: "YAG laser assisted etching for releasing silicon micro structure", PROCEEDINGS OF THE WORKSHOP ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) FORT LAUDERDALE, FEB. 7 - 10, 1993, NEW YORK, IEEE, US, vol. WORKSHOP 6, 7 February 1993 (1993-02-07), pages 53 - 58, XP010111061, ISBN: 0-7803-0957-X *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 11 28 November 1997 (1997-11-28) *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 14 22 December 1999 (1999-12-22) *
REYNTJENS S ET AL: "A review of focused ion beam applications in microsystem technology", J. MICROMECH. MICROENG. (UK), JOURNAL OF MICROMECHANICS AND MICROENGINEERING, JULY 2001, IOP PUBLISHING, UK, vol. 11, no. 4, 2001, pages 287 - 300, XP002288061, ISSN: 0960-1317 *
TERRILL R E ET AL: "Laser chemical vapor deposition for microelectronics production", AEROSPACE CONFERENCE, 1998 IEEE SNOWMASS AT ASPEN, CO, USA 21-28 MARCH 1998, NEW YORK, NY, USA,IEEE, US, 21 March 1998 (1998-03-21), pages 377 - 382, XP010287028, ISBN: 0-7803-4311-5 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US9012867B2 (en) 2003-10-16 2015-04-21 Carl Zeiss Microscopy, Llc Ion sources, systems and methods
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US9236225B2 (en) 2003-10-16 2016-01-12 Carl Zeiss Microscopy, Llc Ion sources, systems and methods
US7804068B2 (en) 2006-11-15 2010-09-28 Alis Corporation Determining dopant information

Also Published As

Publication number Publication date
US20060131269A1 (en) 2006-06-22
US7173253B2 (en) 2007-02-06
WO2004068538A2 (en) 2004-08-12

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