JP5000260B2 - 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液 - Google Patents

微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液 Download PDF

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Publication number
JP5000260B2
JP5000260B2 JP2006285312A JP2006285312A JP5000260B2 JP 5000260 B2 JP5000260 B2 JP 5000260B2 JP 2006285312 A JP2006285312 A JP 2006285312A JP 2006285312 A JP2006285312 A JP 2006285312A JP 5000260 B2 JP5000260 B2 JP 5000260B2
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JP
Japan
Prior art keywords
pattern
resist
resist pattern
substrate processing
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006285312A
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English (en)
Japanese (ja)
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JP2008102348A5 (enExample
JP2008102348A (ja
Inventor
谷 剛 能
崎 竜 太 嶋
林 政 一 小
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Performance Materials IP Japan GK
Original Assignee
AZ Electronic Materials IP Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006285312A priority Critical patent/JP5000260B2/ja
Application filed by AZ Electronic Materials IP Japan Co Ltd filed Critical AZ Electronic Materials IP Japan Co Ltd
Priority to CN2007800383435A priority patent/CN101523296B/zh
Priority to KR1020097010254A priority patent/KR20090082232A/ko
Priority to PCT/JP2007/069977 priority patent/WO2008047719A1/ja
Priority to US12/311,725 priority patent/US8101333B2/en
Priority to EP07829713.2A priority patent/EP2088470B1/en
Priority to MYPI20091007A priority patent/MY149342A/en
Priority to TW096138818A priority patent/TWI417682B/zh
Publication of JP2008102348A publication Critical patent/JP2008102348A/ja
Publication of JP2008102348A5 publication Critical patent/JP2008102348A5/ja
Application granted granted Critical
Publication of JP5000260B2 publication Critical patent/JP5000260B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/11—Vinyl alcohol polymer or derivative
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006285312A 2006-10-19 2006-10-19 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液 Expired - Fee Related JP5000260B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006285312A JP5000260B2 (ja) 2006-10-19 2006-10-19 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
KR1020097010254A KR20090082232A (ko) 2006-10-19 2007-10-12 미세화된 패턴의 형성 방법 및 이에 사용하는 레지스트 기판 처리액
PCT/JP2007/069977 WO2008047719A1 (en) 2006-10-19 2007-10-12 Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method
US12/311,725 US8101333B2 (en) 2006-10-19 2007-10-12 Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method
CN2007800383435A CN101523296B (zh) 2006-10-19 2007-10-12 精细图案形成方法及用于此法的抗蚀基板处理溶液
EP07829713.2A EP2088470B1 (en) 2006-10-19 2007-10-12 Method for formation of miniaturized pattern
MYPI20091007A MY149342A (en) 2006-10-19 2007-10-12 Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method
TW096138818A TWI417682B (zh) 2006-10-19 2007-10-17 微細化圖案之形成方法及用於它之光阻基板處理液

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006285312A JP5000260B2 (ja) 2006-10-19 2006-10-19 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液

Publications (3)

Publication Number Publication Date
JP2008102348A JP2008102348A (ja) 2008-05-01
JP2008102348A5 JP2008102348A5 (enExample) 2009-04-23
JP5000260B2 true JP5000260B2 (ja) 2012-08-15

Family

ID=39313950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006285312A Expired - Fee Related JP5000260B2 (ja) 2006-10-19 2006-10-19 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液

Country Status (8)

Country Link
US (1) US8101333B2 (enExample)
EP (1) EP2088470B1 (enExample)
JP (1) JP5000260B2 (enExample)
KR (1) KR20090082232A (enExample)
CN (1) CN101523296B (enExample)
MY (1) MY149342A (enExample)
TW (1) TWI417682B (enExample)
WO (1) WO2008047719A1 (enExample)

Families Citing this family (17)

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JP5270840B2 (ja) * 2007-01-23 2013-08-21 東京応化工業株式会社 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法
JP5270839B2 (ja) * 2007-01-23 2013-08-21 東京応化工業株式会社 パターン微細化用被覆形成剤及びそれを用いた微細パターンの形成方法
JP5154395B2 (ja) * 2008-02-28 2013-02-27 東京エレクトロン株式会社 半導体装置の製造方法及びレジスト塗布・現像処理システム
JP5306755B2 (ja) * 2008-09-16 2013-10-02 ＡｚエレクトロニックマテリアルズＩｐ株式会社 基板処理液およびそれを用いたレジスト基板処理方法
JP5705669B2 (ja) 2011-07-14 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法
JP5758263B2 (ja) * 2011-10-11 2015-08-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
CN104871289B (zh) 2012-12-14 2017-10-10 巴斯夫欧洲公司 包含表面活性剂和疏水化剂的组合物在处理线间距尺寸为50nm或更低的图案化材料时避免图案崩塌的用途
JP6157151B2 (ja) * 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6459759B2 (ja) * 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤
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TWI682250B (zh) * 2014-10-17 2020-01-11 日商東京應化工業股份有限公司 光阻圖型形成方法
JP6455369B2 (ja) * 2014-10-30 2019-01-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6455370B2 (ja) * 2014-10-30 2019-01-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6503206B2 (ja) 2015-03-19 2019-04-17 東京応化工業株式会社 レジストパターン修復方法
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Also Published As

Publication number Publication date
US20100021700A1 (en) 2010-01-28
TW200832087A (en) 2008-08-01
EP2088470B1 (en) 2017-10-04
EP2088470A4 (en) 2010-10-20
MY149342A (en) 2013-08-30
CN101523296A (zh) 2009-09-02
JP2008102348A (ja) 2008-05-01
US8101333B2 (en) 2012-01-24
EP2088470A1 (en) 2009-08-12
KR20090082232A (ko) 2009-07-29
TWI417682B (zh) 2013-12-01
CN101523296B (zh) 2012-05-30
WO2008047719A1 (en) 2008-04-24

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