CN101399178A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

Info

Publication number
CN101399178A
CN101399178A CNA200810168157XA CN200810168157A CN101399178A CN 101399178 A CN101399178 A CN 101399178A CN A200810168157X A CNA200810168157X A CN A200810168157XA CN 200810168157 A CN200810168157 A CN 200810168157A CN 101399178 A CN101399178 A CN 101399178A
Authority
CN
China
Prior art keywords
layer
peeling
substrate
liquid
element formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200810168157XA
Other languages
English (en)
Chinese (zh)
Inventor
江口晋吾
门马洋平
谷敦弘
广末美佐子
桥本健一
保坂泰靖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101399178A publication Critical patent/CN101399178A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Laser Beam Processing (AREA)
CNA200810168157XA 2006-09-29 2007-09-29 半导体装置的制造方法 Pending CN101399178A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006266543 2006-09-29
JP2006266543 2006-09-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101532439A Division CN101154562A (zh) 2006-09-29 2007-09-29 半导体装置的制造方法

Publications (1)

Publication Number Publication Date
CN101399178A true CN101399178A (zh) 2009-04-01

Family

ID=39256125

Family Applications (6)

Application Number Title Priority Date Filing Date
CNA200810168157XA Pending CN101399178A (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CNA2007101532439A Pending CN101154562A (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CN201510575878.2A Pending CN105261593A (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CN2008101681565A Expired - Fee Related CN101399177B (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CN201510578752.0A Expired - Fee Related CN105206566B (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CN2008101681584A Expired - Fee Related CN101399179B (zh) 2006-09-29 2007-09-29 半导体装置的制造方法

Family Applications After (5)

Application Number Title Priority Date Filing Date
CNA2007101532439A Pending CN101154562A (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CN201510575878.2A Pending CN105261593A (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CN2008101681565A Expired - Fee Related CN101399177B (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CN201510578752.0A Expired - Fee Related CN105206566B (zh) 2006-09-29 2007-09-29 半导体装置的制造方法
CN2008101681584A Expired - Fee Related CN101399179B (zh) 2006-09-29 2007-09-29 半导体装置的制造方法

Country Status (5)

Country Link
US (6) US8048777B2 (https=)
JP (8) JP5070166B2 (https=)
KR (12) KR101383120B1 (https=)
CN (6) CN101399178A (https=)
TW (6) TWI433306B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9905589B2 (en) 2013-12-03 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101150996B1 (ko) * 2004-09-24 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US20070183184A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Ltd. Apparatus and method for manufacturing semiconductor device
TWI433306B (zh) 2006-09-29 2014-04-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
JP2010153813A (ja) * 2008-11-18 2010-07-08 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法、並びに、携帯電話機
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
US7989356B2 (en) * 2009-03-24 2011-08-02 Stats Chippac, Ltd. Semiconductor device and method of forming enhanced UBM structure for improving solder joint reliability
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
TWI473213B (zh) * 2009-07-20 2015-02-11 鴻海精密工業股份有限公司 柔性半導體器件之製造方法
JP2011029504A (ja) * 2009-07-28 2011-02-10 Toshiba Corp 実装構造体
US9847243B2 (en) 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
EP2667407B1 (de) * 2009-09-01 2019-01-23 EV Group GmbH Verfahren zum Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat mittels eines Lösungsmittels und Schallwellen durch Verformung eines auf einem Filmrahmen montierten flexiblen Films
KR102369012B1 (ko) 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
US8987040B2 (en) 2010-06-02 2015-03-24 Kuka Systems Gmbh Manufacturing means and process
JP5902406B2 (ja) 2010-06-25 2016-04-13 株式会社半導体エネルギー研究所 分離方法および半導体装置の作製方法
US20130303887A1 (en) 2010-08-20 2013-11-14 Veran Medical Technologies, Inc. Apparatus and method for four dimensional soft tissue navigation
KR101267529B1 (ko) * 2010-10-30 2013-05-24 엘지디스플레이 주식회사 플렉서블한 유기전계 발광소자 제조 방법
CN103477260B (zh) 2011-01-14 2016-02-03 3Sae科技公司 热力学扩散系统和方法
JP5695535B2 (ja) 2011-09-27 2015-04-08 株式会社東芝 表示装置の製造方法
JP5888927B2 (ja) 2011-10-06 2016-03-22 株式会社ディスコ ダイアタッチフィルムのアブレーション加工方法
JP6368647B2 (ja) * 2011-12-21 2018-08-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板を処理するシステムおよび方法
JP6048498B2 (ja) * 2012-04-24 2016-12-21 コニカミノルタ株式会社 積層ガスバリア性樹脂基材の製造方法
JP6178077B2 (ja) * 2013-01-23 2017-08-09 株式会社ディスコ ウエーハの加工方法
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US10201623B2 (en) 2013-03-15 2019-02-12 Memorial Sloan Kettering Cancer Center HSP90-targeted cardiac imaging and therapy
KR102082407B1 (ko) 2013-04-03 2020-02-28 삼성디스플레이 주식회사 플렉서블 기판, 플렉서블 표시 장치, 및 플렉서블 표시 장치의 제조 방법
TWI515852B (zh) * 2013-05-01 2016-01-01 友達光電股份有限公司 主動元件基板與其之製作方法
KR102187752B1 (ko) 2013-05-07 2020-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 박리 장치
TWI642094B (zh) * 2013-08-06 2018-11-21 半導體能源研究所股份有限公司 剝離方法
CN103456689B (zh) * 2013-08-13 2015-02-25 京东方科技集团股份有限公司 用于将柔性基板与玻璃基板分离的装置及生产设备
CN103456900B (zh) * 2013-08-20 2016-07-06 Tcl集团股份有限公司 柔性显示装置的制造方法
KR102437483B1 (ko) * 2013-08-30 2022-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 적층의 가공 장치 및 가공 방법
KR102104334B1 (ko) * 2013-09-04 2020-04-27 삼성디스플레이 주식회사 유기 발광 표시 장치의 제조방법
TW201943069A (zh) 2013-09-06 2019-11-01 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
US9981457B2 (en) 2013-09-18 2018-05-29 Semiconductor Emergy Laboratory Co., Ltd. Manufacturing apparatus of stack
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
KR102462742B1 (ko) 2013-12-02 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
US9427949B2 (en) 2013-12-03 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and stack manufacturing apparatus
WO2015087192A1 (en) * 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6548871B2 (ja) 2014-05-03 2019-07-24 株式会社半導体エネルギー研究所 積層体の基板剥離装置
WO2015170210A1 (en) * 2014-05-03 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Separation apparatus for thin film stacked body
JP2016021560A (ja) * 2014-06-20 2016-02-04 株式会社半導体エネルギー研究所 剥離装置
US9799829B2 (en) * 2014-07-25 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Separation method, light-emitting device, module, and electronic device
KR101702184B1 (ko) 2014-08-14 2017-02-02 주식회사 엘지화학 패널로부터 편광 필름을 박리하기 위한 박리바, 이를 이용한 박리 장치 및 박리 방법
TWI584703B (zh) * 2014-08-22 2017-05-21 友達光電股份有限公司 顯示模組基板及其製造方法
CN104201096B (zh) * 2014-09-04 2017-11-24 广州新视界光电科技有限公司 一种解离剂、解离工艺、柔性显示器件制备及其制备工艺
KR102457313B1 (ko) * 2014-09-29 2022-10-20 린텍 가부시키가이샤 반도체 웨이퍼 가공용 시트용 기재, 반도체 웨이퍼 가공용 시트 및 반도체 장치의 제조 방법
KR102348725B1 (ko) * 2015-04-30 2022-01-07 엘지디스플레이 주식회사 플렉서블 디스플레이 장치 및 이의 제조 방법
JP6815096B2 (ja) 2015-05-27 2021-01-20 株式会社半導体エネルギー研究所 剥離装置
US9496165B1 (en) 2015-07-09 2016-11-15 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier
JP6470414B2 (ja) * 2015-08-11 2019-02-13 東京応化工業株式会社 支持体分離装置及び支持体分離方法
JP6363309B2 (ja) * 2015-12-29 2018-07-25 鴻海精密工業股▲ふん▼有限公司 樹脂フィルムの剥離方法、フレキシブル基板を有する電子デバイスの製造方法および有機ｅｌ表示装置の製造方法ならびに樹脂フィルムの剥離装置
US10625443B2 (en) 2015-12-29 2020-04-21 Hon Hai Precision Industry Co., Ltd. Method and device for releasing resin film, method for manufacturing electronic device, and method for manufacturing organic EL display device
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
KR102340066B1 (ko) 2016-04-07 2021-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
US10003023B2 (en) 2016-04-15 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10185190B2 (en) 2016-05-11 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Display device, module, and electronic device
KR102554183B1 (ko) 2016-07-29 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
TW201808628A (zh) 2016-08-09 2018-03-16 半導體能源研究所股份有限公司 半導體裝置的製造方法
US11637009B2 (en) 2016-10-07 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
CN110178238B (zh) * 2017-01-11 2023-07-28 应用材料公司 用于处理基板的方法和设备和对应的显示元件
JP6954992B2 (ja) * 2017-03-21 2021-10-27 三井金属鉱業株式会社 配線板の製造方法
KR102436547B1 (ko) * 2017-09-29 2022-08-29 삼성디스플레이 주식회사 전자 장치
KR102547124B1 (ko) 2018-03-30 2023-06-26 삼성디스플레이 주식회사 표시장치
JP7010369B2 (ja) 2018-04-16 2022-01-26 日本製鉄株式会社 高周波焼入れ装置
WO2020054445A1 (ja) 2018-09-10 2020-03-19 日東電工株式会社 調光素子の製造方法
CN111047980B (zh) * 2018-10-12 2021-12-14 华为技术有限公司 柔性显示面板及终端设备
TWI885128B (zh) * 2020-04-28 2025-06-01 日商東京威力科創股份有限公司 半導體裝置之製造方法、半導體製造裝置及系統
CN111524860B (zh) * 2020-05-26 2024-06-18 信利半导体有限公司 一种柔性基板的机械剥离方法及装置
CN111613625A (zh) * 2020-05-26 2020-09-01 信利半导体有限公司 柔性基板及其机械剥离方法
CN112201708B (zh) * 2020-09-27 2022-07-05 上海海事大学 一种柔性衬底卷曲量子阱薄膜材料及其制备方法
KR20220100115A (ko) * 2021-01-07 2022-07-15 삼성디스플레이 주식회사 박리 장치 및 박리 장치의 박리 방법
CN113083386B (zh) * 2021-04-02 2023-04-18 重庆大学 一种液样简便、快速离散化芯片及其使用方法
CN115602048B (zh) * 2021-06-28 2025-09-26 广东聚华印刷显示技术有限公司 显示面板的制备方法及其处理设备

Family Cites Families (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2601757B2 (ja) * 1993-03-09 1997-04-16 米原 隆 エアロゾル噴霧法及びその装置
JP3352340B2 (ja) * 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
JPH08130201A (ja) * 1994-10-28 1996-05-21 Disco Abrasive Syst Ltd 混合手段を有する処理装置
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0848415A1 (en) 1995-08-31 1998-06-17 Nitto Denko Corporation Method and apparatus for peeling protective adhesive tape from semiconductor wafer
US6072239A (en) * 1995-11-08 2000-06-06 Fujitsu Limited Device having resin package with projections
JP2859847B2 (ja) 1996-05-20 1999-02-24 日本カーバイド工業株式会社 接着シートの剥離方法
JP4619462B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
EP1758169A3 (en) * 1996-08-27 2007-05-23 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
ATE261612T1 (de) * 1996-12-18 2004-03-15 Canon Kk Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht
JP3012571B2 (ja) * 1997-09-22 2000-02-21 九州日本電気株式会社 洗浄装置
US6265328B1 (en) 1998-01-30 2001-07-24 Silicon Genesis Corporation Wafer edge engineering method and device
JPH11297816A (ja) 1998-04-09 1999-10-29 Seiko Epson Corp 半導体装置の製造方法
US6326279B1 (en) * 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
JP2000279852A (ja) 1999-03-29 2000-10-10 Tomotaka Marui 自生旋回流動の形状変形装置と流動方向の反転装置および流動の形状変形を用いたプロセス装置、移動体構造、トンネル構造、ならびに流動方向の反転を用いた噴流生成装置、物体吸引装置および物体操作方法と生体刺激方法
JP2001026500A (ja) 1999-07-14 2001-01-30 Canon Inc 薄膜単結晶デバイスの製造法
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
JP2001111081A (ja) 1999-07-30 2001-04-20 Canon Inc 太陽電池モジュール及び太陽電池モジュールの製造方法
US6391220B1 (en) * 1999-08-18 2002-05-21 Fujitsu Limited, Inc. Methods for fabricating flexible circuit structures
US6592739B1 (en) * 1999-11-29 2003-07-15 Canon Kabushiki Kaisha Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device
JP4311702B2 (ja) * 1999-12-08 2009-08-12 キヤノン株式会社 複合部材の分離方法及び薄膜の製造方法
US7060153B2 (en) * 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP2001237215A (ja) * 2000-02-23 2001-08-31 Nec Corp 半導体装置の製造方法及びその装置
JP4884592B2 (ja) 2000-03-15 2012-02-29 株式会社半導体エネルギー研究所 発光装置の作製方法及び表示装置の作製方法
JP2001328849A (ja) 2000-05-19 2001-11-27 Tomoegawa Paper Co Ltd 粘着剤付ディスプレイ材料のリサイクル方法
JP3945130B2 (ja) 2000-06-08 2007-07-18 株式会社Ｓｕｍｃｏ 張り合わせ誘電体分離ウェーハの製造方法
SG136795A1 (en) * 2000-09-14 2007-11-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4803884B2 (ja) * 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
KR100379533B1 (ko) 2001-05-28 2003-04-10 주식회사 하이닉스반도체 반도체소자의 게이트절연막 제조방법
TW548860B (en) * 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4027740B2 (ja) * 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4527068B2 (ja) * 2001-07-16 2010-08-18 株式会社半導体エネルギー研究所 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法
US6887650B2 (en) 2001-07-24 2005-05-03 Seiko Epson Corporation Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, ic card, and electronic appliance
JP4602261B2 (ja) * 2001-08-10 2010-12-22 株式会社半導体エネルギー研究所 剥離方法および半導体装置の作製方法
TW554398B (en) 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP3824510B2 (ja) * 2001-08-24 2006-09-20 大日本スクリーン製造株式会社 基板処理装置
KR100944886B1 (ko) 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP2003237263A (ja) 2002-02-18 2003-08-27 Minolta Co Ltd 再生可能な情報保持体、該情報保持体の再生方法、及び再生装置
DE60325669D1 (de) 2002-05-17 2009-02-26 Semiconductor Energy Lab Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements
JP2004047975A (ja) 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
JP2004047823A (ja) * 2002-07-12 2004-02-12 Tokyo Seimitsu Co Ltd ダイシングテープ貼付装置およびバックグラインド・ダイシングテープ貼付システム
TWI272641B (en) 2002-07-16 2007-02-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4471563B2 (ja) 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
AU2003275614A1 (en) 2002-10-30 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2004158765A (ja) 2002-11-08 2004-06-03 Tokyo Kakoki Kk 基板処理装置
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
KR101033797B1 (ko) 2003-01-15 2011-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법
US7436050B2 (en) 2003-01-22 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a flexible printed circuit
JP4151421B2 (ja) * 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
TWI356658B (en) * 2003-01-23 2012-01-11 Toray Industries Members for circuit board, method and device for m
JP2004310051A (ja) 2003-03-24 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法および製造装置
JP2004311955A (ja) * 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
JP2005079395A (ja) 2003-09-01 2005-03-24 Seiko Epson Corp 積層体及びその製造方法、電気光学装置、電子機器
JP2005079553A (ja) 2003-09-03 2005-03-24 Seiko Epson Corp 転写方法、剥離方法、及び剥離装置
JP4809600B2 (ja) * 2003-10-28 2011-11-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1528594B1 (en) 2003-10-28 2019-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2005045908A1 (ja) 2003-11-06 2005-05-19 Matsushita Electric Industrial Co., Ltd. 基板貼り合わせ方法、その貼り合わせ基板及び直接接合基板
JP2005148638A (ja) 2003-11-19 2005-06-09 Nitto Denko Corp 粘着型光学フィルムの剥離方法
CN100583193C (zh) * 2003-11-28 2010-01-20 株式会社半导体能源研究所 制造显示设备的方法
US7566640B2 (en) * 2003-12-15 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US7015075B2 (en) * 2004-02-09 2006-03-21 Freescale Semiconuctor, Inc. Die encapsulation using a porous carrier
CN100521117C (zh) * 2004-02-25 2009-07-29 株式会社半导体能源研究所 半导体器件及其制造方法
JP2006049800A (ja) 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
US7282380B2 (en) * 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101187403B1 (ko) * 2004-06-02 2012-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
CN100540431C (zh) * 2004-07-02 2009-09-16 夏普股份有限公司 膜剥离方法和装置
US7591863B2 (en) * 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
JP4749062B2 (ja) 2004-07-16 2011-08-17 株式会社半導体エネルギー研究所 薄膜集積回路を封止する装置及びｉｃチップの作製方法
JP4749074B2 (ja) * 2004-07-30 2011-08-17 株式会社半導体エネルギー研究所 Ｉｃチップの作製方法及び装置
JP5041686B2 (ja) 2004-07-30 2012-10-03 株式会社半導体エネルギー研究所 薄膜集積回路の剥離方法および半導体装置の作製方法
WO2006011664A1 (en) 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2006011665A1 (en) 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip
JP5008289B2 (ja) * 2004-09-24 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法
KR101150996B1 (ko) 2004-09-24 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
EP1814369A4 (en) * 2004-10-01 2008-10-29 Toray Industries LONG FILM PCB AND PRODUCTION PROCESS AND PRODUCTION DEVICE THEREFOR
JP5072210B2 (ja) * 2004-10-05 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4945726B2 (ja) * 2004-11-05 2012-06-06 セイコーエプソン株式会社 薄膜装置の製造方法
US7482248B2 (en) * 2004-12-03 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5089037B2 (ja) 2004-12-03 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4649198B2 (ja) * 2004-12-20 2011-03-09 新光電気工業株式会社 配線基板の製造方法
JP2006178185A (ja) * 2004-12-22 2006-07-06 Konica Minolta Photo Imaging Inc レンズの製造方法、映像表示装置の製造方法、レンズの製造装置及び映像表示装置の製造装置
JP4479512B2 (ja) 2005-01-18 2010-06-09 東レ株式会社 回路基板用部材および回路基板用部材の製造方法
JP5100012B2 (ja) * 2005-01-28 2012-12-19 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
CN101950748B (zh) 2005-01-28 2013-06-12 株式会社半导体能源研究所 半导体器件和制造它的方法
JP2006216891A (ja) 2005-02-07 2006-08-17 Tokyo Univ Of Agriculture & Technology 薄膜素子構造の作製方法、及び薄膜素子構造作製用の機能性基体
JP2006228776A (ja) * 2005-02-15 2006-08-31 Advantest Corp 荷電粒子ビーム露光装置及び荷電粒子ビーム露光方法
CN1283874C (zh) 2005-02-18 2006-11-08 孙占明 不剪开式圆筒针织物烧毛除皱定型机
US7566633B2 (en) 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5153058B2 (ja) * 2005-02-25 2013-02-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI413152B (zh) * 2005-03-01 2013-10-21 半導體能源研究所股份有限公司 半導體裝置製造方法
JP2006259095A (ja) 2005-03-16 2006-09-28 Mitsubishi Paper Mills Ltd 光架橋性樹脂組成物
JP4795743B2 (ja) * 2005-05-19 2011-10-19 リンテック株式会社 貼付装置
US7820526B2 (en) * 2005-05-20 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7465674B2 (en) * 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
EP1760776B1 (en) 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
US7767543B2 (en) * 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
JP2007184495A (ja) 2006-01-10 2007-07-19 Fujifilm Corp ウエーハリングの再生処理装置
JP4610515B2 (ja) * 2006-04-21 2011-01-12 株式会社半導体エネルギー研究所 剥離方法
TWI433306B (zh) 2006-09-29 2014-04-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8137417B2 (en) * 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9905589B2 (en) 2013-12-03 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
CN101399179A (zh) 2009-04-01
JP2013254989A (ja) 2013-12-19
CN101399177B (zh) 2012-10-10
JP5355202B2 (ja) 2013-11-27
KR20140089330A (ko) 2014-07-14
KR101955913B1 (ko) 2019-03-11
JP5070166B2 (ja) 2012-11-07
KR20150013106A (ko) 2015-02-04
KR101154834B1 (ko) 2012-06-18
JP2015109467A (ja) 2015-06-11
JP2017017337A (ja) 2017-01-19
CN101399179B (zh) 2012-09-05
US20090017599A1 (en) 2009-01-15
KR101513008B1 (ko) 2015-04-17
CN105206566B (zh) 2019-07-30
US9054141B2 (en) 2015-06-09
JP5378097B2 (ja) 2013-12-25
KR20180034362A (ko) 2018-04-04
KR20140003346A (ko) 2014-01-09
TW201601298A (zh) 2016-01-01
TWI379409B (en) 2012-12-11
KR100987917B1 (ko) 2010-10-18
KR20080098345A (ko) 2008-11-07
US9472429B2 (en) 2016-10-18
KR101021051B1 (ko) 2011-03-15
JP2018078300A (ja) 2018-05-17
US20150017751A1 (en) 2015-01-15
TWI430435B (zh) 2014-03-11
CN105206566A (zh) 2015-12-30
US20120045861A1 (en) 2012-02-23
KR20150066499A (ko) 2015-06-16
KR20100011966A (ko) 2010-02-03
KR101472773B1 (ko) 2014-12-15
US8048777B2 (en) 2011-11-01
JP2009004810A (ja) 2009-01-08
KR101589950B1 (ko) 2016-01-29
CN101399177A (zh) 2009-04-01
US20090017567A1 (en) 2009-01-15
KR20080029887A (ko) 2008-04-03
TW200913236A (en) 2009-03-16
TWI570900B (zh) 2017-02-11
US20080132033A1 (en) 2008-06-05
JP6255074B2 (ja) 2017-12-27
JP2009278124A (ja) 2009-11-26
TW201419502A (zh) 2014-05-16
TWI433306B (zh) 2014-04-01
US8043936B2 (en) 2011-10-25
KR20080098346A (ko) 2008-11-07
JP2009164649A (ja) 2009-07-23
KR20160041870A (ko) 2016-04-18
TWI450387B (zh) 2014-08-21
JP6017594B2 (ja) 2016-11-02
KR100987918B1 (ko) 2010-10-18
CN101154562A (zh) 2008-04-02
KR101383120B1 (ko) 2014-04-09
TW200830542A (en) 2008-07-16
JP5297871B2 (ja) 2013-09-25
TW200921905A (en) 2009-05-16
KR20080098344A (ko) 2008-11-07
KR20170066302A (ko) 2017-06-14
TWI611565B (zh) 2018-01-11
CN105261593A (zh) 2016-01-20
US8048770B2 (en) 2011-11-01
US20090023251A1 (en) 2009-01-22
JP2009164650A (ja) 2009-07-23
TW200915546A (en) 2009-04-01

Similar Documents

Publication Publication Date Title
CN101399179B (zh) 半导体装置的制造方法
CN101154561B (zh) 剥离装置及半导体装置的制造方法
JP4402144B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20090401