KR20080098344A - 반도체 장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 Download PDFInfo
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- KR20080098344A KR20080098344A KR1020080102326A KR20080102326A KR20080098344A KR 20080098344 A KR20080098344 A KR 20080098344A KR 1020080102326 A KR1020080102326 A KR 1020080102326A KR 20080102326 A KR20080102326 A KR 20080102326A KR 20080098344 A KR20080098344 A KR 20080098344A
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Classifications
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H—ELECTRICITY
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Abstract
Description
액체의 종류 | 관찰한 기판수 | 관찰한 집적회로의 총수 | 파괴된 집적회로의 총수 | 파괴된 집적회로의 비율 |
순수 | 3 | 144 | 0 | 0.0% |
CO2수 | 3 | 144 | 0 | 0.0% |
HCl수 | 1 | 48 | 0 | 0.0% |
없음 | 4 | 192 | 59 | 30.7% |
액체의 종류 | 관찰한 기판수 | 관찰한 소자 형성층의 총수 | 깨어짐 등이 관찰된 소자 형성층의 총수 | 깨어짐 등이 발생한 소자 형성층의 비율 |
CO2수 | 2 | 96 | 4 | 4.2% |
없음 | 2 | 96 | 53 | 55.2% |
Claims (12)
- 반도체 장치 제조 방법에 있어서:기판 위에 박리층을 형성하는 단계;상기 박리층 위에 반도체 소자를 포함하는 소자 형성층을 형성하는 단계;상기 소자 형성층 위에 지지 기재(支持基材)를 제공하는 단계;상기 박리층과 상기 소자 형성층 사이의 계면에 박리를 생성하는 단계;롤러(roller)에 상기 지지 기재 및 상기 소자 형성층을 감음(winding)으로써 상기 기판으로부터 상기 소자 형성층을 분리하는 단계; 및상기 박리에 의해 나타나는 상기 소자 형성층의 표면을 액체로 적시는 단계를 포함하는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법에 있어서:기판 위에 박리층을 형성하는 단계;상기 박리층 위에 반도체 소자를 포함하는 소자 형성층을 형성하는 단계;상기 소자 형성층 위에 지지 기재를 제공하는 단계;상기 박리층과 상기 기판 사이의 계면에 박리를 생성하는 단계;롤러에 상기 지지 기재 및 상기 소자 형성층을 감음으로써 상기 기판으로부터 상기 소자 형성층을 분리하는 단계; 및상기 박리에 의해 나타나는 표면을 액체로 적시는 단계를 포함하는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법에 있어서:기판 위에 박리층을 형성하는 단계;상기 박리층 위에 반도체 소자를 포함하는 소자 형성층을 형성하는 단계;상기 소자 형성층 위에 지지 기재를 제공하는 단계;상기 박리층 내부에 박리를 생성하는 단계;롤러에 상기 지지 기재 및 상기 소자 형성층을 감음으로써 상기 기판으로부터 상기 소자 형성층을 분리하는 단계; 및상기 박리에 의해 나타나는 표면을 액체로 적시는 단계를 포함하는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법에 있어서:기판 위에 박리층을 형성하는 단계;상기 박리층 위에 반도체 소자를 포함하는 소자 형성층을 형성하는 단계;상기 소자 형성층 위에 지지 기재를 제공하는 단계;상기 박리층과 상기 소자 형성층 사이의 계면에 박리를 생성하는 단계; 및상기 박리에 의해 나타나는 표면이 액체로 적셔지는 동안 롤러에 상기 지지 기재 및 상기 소자 형성층을 감음으로써 상기 기판으로부터 상기 소자 형성층을 분리하는 단계를 포함하는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법에 있어서:기판 위에 박리층을 형성하는 단계;상기 박리층 위에 반도체 소자를 포함하는 소자 형성층을 형성하는 단계;상기 소자 형성층 위에 지지 기재를 제공하는 단계;상기 박리층과 상기 기판 사이의 계면에 박리를 생성하는 단계; 및상기 박리에 의해 나타나는 표면이 액체로 적셔지는 동안 롤러에 상기 지지 기재 및 상기 소자 형성층을 감음으로써 상기 기판으로부터 상기 소자 형성층을 분리하는 단계를 포함하는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법에 있어서:기판 위에 박리층을 형성하는 단계;상기 박리층 위에 반도체 소자를 포함하는 소자 형성층을 형성하는 단계;상기 소자 형성층 위에 지지 기재를 제공하는 단계;상기 박리층 내부에 박리를 생성하는 단계; 및상기 박리에 의해 나타나는 표면이 액체로 적셔지는 동안 롤러에 상기 지지 기재 및 상기 소자 형성층을 감음으로써 상기 기판으로부터 상기 소자 형성층을 분리하는 단계를 포함하는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 액체는 순수인, 반도체 장치 제조 방법.
- 제 2 항 내지 제 6 항 중 어느 한 항에 있어서,상기 박리에 의해 나타나는 상기 표면은 노즐을 이용함으로써 액체로 적셔지는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 박리층은 금속을 포함하는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 지지 기재는 가요성 필름인, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 액체는 극성 액체인, 반도체 장치 제조 방법.
- 제 1 항에 있어서,상기 박리에 의해 나타나는 상기 소자 형성층의 표면은 노즐을 이용함으로써 액체로 적셔지는, 반도체 장치 제조 방법.
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WO2006033451A1 (en) * | 2004-09-24 | 2006-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20070183184A1 (en) * | 2006-02-03 | 2007-08-09 | Semiconductor Energy Laboratory Ltd. | Apparatus and method for manufacturing semiconductor device |
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