CN101114673B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN101114673B CN101114673B CN200610164669XA CN200610164669A CN101114673B CN 101114673 B CN101114673 B CN 101114673B CN 200610164669X A CN200610164669X A CN 200610164669XA CN 200610164669 A CN200610164669 A CN 200610164669A CN 101114673 B CN101114673 B CN 101114673B
- Authority
- CN
- China
- Prior art keywords
- district
- mixed crystal
- silicon substrate
- crystal layer
- sige mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 304
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 121
- 239000010703 silicon Substances 0.000 claims abstract description 120
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 110
- 230000012010 growth Effects 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 76
- 239000012535 impurity Substances 0.000 claims description 78
- 238000009792 diffusion process Methods 0.000 claims description 66
- 229910021332 silicide Inorganic materials 0.000 claims description 32
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 32
- 229910052732 germanium Inorganic materials 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 150000003376 silicon Chemical class 0.000 claims description 10
- 230000008676 import Effects 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 16
- 230000002093 peripheral effect Effects 0.000 claims 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 295
- 239000010410 layer Substances 0.000 description 394
- 239000000523 sample Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 239000002800 charge carrier Substances 0.000 description 11
- 230000002950 deficient Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 230000006837 decompression Effects 0.000 description 9
- 239000013074 reference sample Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 230000006835 compression Effects 0.000 description 7
- 238000007906 compression Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910005883 NiSi Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000003595 mist Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910005881 NiSi 2 Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 244000287680 Garcinia dulcis Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006206910A JP5076388B2 (ja) | 2006-07-28 | 2006-07-28 | 半導体装置及びその製造方法 |
JP2006206910 | 2006-07-28 | ||
JP2006-206910 | 2006-07-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101114673A CN101114673A (zh) | 2008-01-30 |
CN101114673B true CN101114673B (zh) | 2010-07-07 |
Family
ID=38985317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610164669XA Active CN101114673B (zh) | 2006-07-28 | 2006-12-15 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (4) | US7626215B2 (zh) |
JP (1) | JP5076388B2 (zh) |
CN (1) | CN101114673B (zh) |
TW (1) | TWI326918B (zh) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8994104B2 (en) | 1999-09-28 | 2015-03-31 | Intel Corporation | Contact resistance reduction employing germanium overlayer pre-contact metalization |
US7892928B2 (en) * | 2007-03-23 | 2011-02-22 | International Business Machines Corporation | Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers |
US7989901B2 (en) | 2007-04-27 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with improved source/drain regions with SiGe |
JP5168287B2 (ja) * | 2008-01-25 | 2013-03-21 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US8153501B2 (en) * | 2008-03-06 | 2012-04-10 | Toshiba America Electronic Components, Inc. | Maskless selective boron-doped epitaxial growth |
US7838887B2 (en) * | 2008-04-30 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain carbon implant and RTA anneal, pre-SiGe deposition |
JP5315922B2 (ja) | 2008-10-27 | 2013-10-16 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7902009B2 (en) * | 2008-12-11 | 2011-03-08 | Intel Corporation | Graded high germanium compound films for strained semiconductor devices |
JP5697849B2 (ja) * | 2009-01-28 | 2015-04-08 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
US8071481B2 (en) * | 2009-04-23 | 2011-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming highly strained source/drain trenches |
JP2010282991A (ja) * | 2009-06-02 | 2010-12-16 | Renesas Electronics Corp | 半導体装置 |
JP5287621B2 (ja) * | 2009-09-10 | 2013-09-11 | 富士通セミコンダクター株式会社 | 半導体装置 |
US8415718B2 (en) * | 2009-10-30 | 2013-04-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming epi film in substrate trench |
US8765532B2 (en) * | 2010-01-11 | 2014-07-01 | International Business Machines Corporation | Fabrication of field effect devices using spacers |
US8329568B1 (en) * | 2010-05-03 | 2012-12-11 | Xilinx, Inc. | Semiconductor device and method for making the same |
US8828850B2 (en) | 2010-05-20 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing variation by using combination epitaxy growth |
US9064688B2 (en) | 2010-05-20 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Performing enhanced cleaning in the formation of MOS devices |
US9263339B2 (en) | 2010-05-20 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective etching in the formation of epitaxy regions in MOS devices |
KR101776926B1 (ko) | 2010-09-07 | 2017-09-08 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR101811796B1 (ko) * | 2010-10-06 | 2018-01-25 | 삼성전자주식회사 | 급경사 접합 프로파일을 갖는 소스/드레인 영역들을 구비하는 반도체 소자 및 그 제조방법 |
CN102479717B (zh) * | 2010-11-29 | 2015-07-08 | 中芯国际集成电路制造(北京)有限公司 | 硅锗外延层的形成方法 |
US9484432B2 (en) | 2010-12-21 | 2016-11-01 | Intel Corporation | Contact resistance reduction employing germanium overlayer pre-contact metalization |
US8901537B2 (en) | 2010-12-21 | 2014-12-02 | Intel Corporation | Transistors with high concentration of boron doped germanium |
US8716750B2 (en) * | 2011-07-25 | 2014-05-06 | United Microelectronics Corp. | Semiconductor device having epitaxial structures |
CN102931082B (zh) * | 2011-08-10 | 2015-04-22 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
US20130089962A1 (en) * | 2011-10-11 | 2013-04-11 | Chung-Fu Chang | Semiconductor process |
CN103107070B (zh) * | 2011-11-14 | 2017-11-07 | 联华电子股份有限公司 | 半导体装置及制作外延层的方法 |
JP5426732B2 (ja) * | 2012-07-10 | 2014-02-26 | 株式会社東芝 | 電界効果トランジスタ |
KR20140039544A (ko) * | 2012-09-24 | 2014-04-02 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
CN103715089B (zh) * | 2012-09-29 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
CN103779278A (zh) * | 2012-10-22 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | Cmos管的形成方法 |
US9099421B2 (en) * | 2012-10-31 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company Limited | Surface profile for semiconductor region |
CN103943507A (zh) * | 2014-03-24 | 2014-07-23 | 上海华力微电子有限公司 | 嵌入式锗硅外延位错缺陷的改善方法 |
CN105206530A (zh) * | 2014-06-27 | 2015-12-30 | 中芯国际集成电路制造(上海)有限公司 | Pmos晶体管的形成方法 |
KR102200922B1 (ko) * | 2014-07-17 | 2021-01-11 | 삼성전자주식회사 | 절연 패턴을 갖는 반도체 소자 및 그 형성 방법 |
KR20230042141A (ko) | 2014-08-02 | 2023-03-27 | 애플 인크. | 상황 특정 사용자 인터페이스 |
US10452253B2 (en) | 2014-08-15 | 2019-10-22 | Apple Inc. | Weather user interface |
CN105762068A (zh) * | 2014-12-19 | 2016-07-13 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
WO2016144385A1 (en) | 2015-03-08 | 2016-09-15 | Apple Inc. | Sharing user-configurable graphical constructs |
CN104821336B (zh) * | 2015-04-20 | 2017-12-12 | 上海华力微电子有限公司 | 用于使用保形填充层改善器件表面均匀性的方法和系统 |
EP4321088A3 (en) | 2015-08-20 | 2024-04-24 | Apple Inc. | Exercise-based watch face |
CN105097554B (zh) * | 2015-08-24 | 2018-12-07 | 上海华力微电子有限公司 | 用于减少高浓度外延工艺中的位错缺陷的方法和系统 |
CN108091651B (zh) * | 2016-11-23 | 2021-03-30 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
DK179412B1 (en) | 2017-05-12 | 2018-06-06 | Apple Inc | Context-Specific User Interfaces |
TWI743252B (zh) | 2017-06-30 | 2021-10-21 | 台灣積體電路製造股份有限公司 | 鰭狀場效電晶體裝置與其形成方法 |
CN109962108B (zh) * | 2017-12-22 | 2022-05-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
CN110047753B (zh) * | 2018-01-16 | 2022-03-29 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的形成方法和半导体器件 |
US11327650B2 (en) | 2018-05-07 | 2022-05-10 | Apple Inc. | User interfaces having a collection of complications |
CN113113360B (zh) * | 2020-01-13 | 2022-11-18 | 中芯国际集成电路制造(天津)有限公司 | 半导体器件及其形成方法 |
DK202070625A1 (en) | 2020-05-11 | 2022-01-04 | Apple Inc | User interfaces related to time |
CN115552375A (zh) | 2020-05-11 | 2022-12-30 | 苹果公司 | 用于管理用户界面共享的用户界面 |
KR20220030374A (ko) | 2020-08-28 | 2022-03-11 | 삼성전자주식회사 | 반도체 장치 |
US11694590B2 (en) | 2020-12-21 | 2023-07-04 | Apple Inc. | Dynamic user interface with time indicator |
US11720239B2 (en) | 2021-01-07 | 2023-08-08 | Apple Inc. | Techniques for user interfaces related to an event |
US11921992B2 (en) | 2021-05-14 | 2024-03-05 | Apple Inc. | User interfaces related to time |
CN114023820B (zh) * | 2021-10-08 | 2023-12-19 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3209731B2 (ja) * | 1998-09-10 | 2001-09-17 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6319782B1 (en) | 1998-09-10 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
JP2002100762A (ja) * | 2000-09-22 | 2002-04-05 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002124665A (ja) * | 2000-10-12 | 2002-04-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6891192B2 (en) | 2003-08-04 | 2005-05-10 | International Business Machines Corporation | Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions |
JP2005101278A (ja) | 2003-09-25 | 2005-04-14 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
JP4375619B2 (ja) * | 2004-05-26 | 2009-12-02 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7172933B2 (en) * | 2004-06-10 | 2007-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Recessed polysilicon gate structure for a strained silicon MOSFET device |
JP4369359B2 (ja) * | 2004-12-28 | 2009-11-18 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
JP4361880B2 (ja) | 2005-01-11 | 2009-11-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
JP5130648B2 (ja) * | 2006-04-27 | 2013-01-30 | ソニー株式会社 | 半導体装置の製造方法および半導体装置 |
-
2006
- 2006-07-28 JP JP2006206910A patent/JP5076388B2/ja not_active Expired - Fee Related
- 2006-11-24 TW TW095143524A patent/TWI326918B/zh active
- 2006-11-28 US US11/604,694 patent/US7626215B2/en active Active
- 2006-12-15 CN CN200610164669XA patent/CN101114673B/zh active Active
-
2009
- 2009-09-22 US US12/564,313 patent/US8207042B2/en active Active
-
2011
- 2011-09-22 US US13/240,303 patent/US8278177B2/en active Active
-
2012
- 2012-09-05 US US13/603,577 patent/US8518785B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI326918B (en) | 2010-07-01 |
CN101114673A (zh) | 2008-01-30 |
JP2008034650A (ja) | 2008-02-14 |
US7626215B2 (en) | 2009-12-01 |
US20080023773A1 (en) | 2008-01-31 |
JP5076388B2 (ja) | 2012-11-21 |
US20120329229A1 (en) | 2012-12-27 |
TW200807712A (en) | 2008-02-01 |
US8278177B2 (en) | 2012-10-02 |
US20120009750A1 (en) | 2012-01-12 |
US8518785B2 (en) | 2013-08-27 |
US20100015774A1 (en) | 2010-01-21 |
US8207042B2 (en) | 2012-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101114673B (zh) | 半导体器件及其制造方法 | |
CN100386863C (zh) | 半导体器件制造方法及其半导体器件 | |
CN100479191C (zh) | Mosfet器件及其制造方法 | |
US8106380B2 (en) | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same | |
CN106328538B (zh) | 自对准硅锗鳍式fet | |
CN103210493B (zh) | 邻接的soi结隔离结构和器件以及制造方法 | |
US20120161105A1 (en) | Uniaxially strained quantum well device and method of making same | |
US20080135879A1 (en) | Method of fabricating cmos transistor and cmos transistor fabricated thereby | |
US7018882B2 (en) | Method to form local “silicon-on-nothing” or “silicon-on-insulator” wafers with tensile-strained silicon | |
CN102214684B (zh) | 一种具有悬空源漏的半导体结构及其形成方法 | |
JP2004087671A (ja) | 半導体装置およびその製造方法 | |
JP2007519223A5 (zh) | ||
Yamada et al. | Suppression of drain-induced barrier lowering in silicon-on-insulator MOSFETs through source/drain engineering for low-operating-power system-on-chip applications | |
Yeo et al. | Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel | |
CN100370622C (zh) | 半导体场效应晶体管器件及其形成方法 | |
CN102214685B (zh) | 具有悬空源漏的半导体结构及其形成方法 | |
CN101916770B (zh) | 具有双缓变结的Si-Ge-Si半导体结构及其形成方法 | |
CN102354708B (zh) | 具有悬空源漏的隧穿场效应晶体管结构及其形成方法 | |
CN102738161B (zh) | 一种双多晶双应变混合晶面Si基BiCMOS集成器件及制备方法 | |
CN102214683B (zh) | 具有悬空源漏的半导体结构及其形成方法 | |
CN104681439A (zh) | 一种半导体器件及其制造方法和电子装置 | |
CN102916015B (zh) | 一种基于SOI SiGe HBT的应变Si BiCMOS集成器件及制备方法 | |
CN105244275B (zh) | 具有突变隧穿结的pnin/npip型绝缘层上张应变锗tfet及制备方法 | |
US20150001594A1 (en) | Forming tunneling field-effect transistor with stacking fault and resulting device | |
CN102738172B (zh) | 一种双多晶平面SOI BiCMOS集成器件及制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kawasaki, Kanagawa, Japan Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20200803 Address after: Kanagawa Prefecture, Japan Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: FUJITSU MICROELECTRONICS Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230621 Address after: Kanagawa Patentee after: FUJITSU Ltd. Address before: Kanagawa Patentee before: FUJITSU MICROELECTRONICS Ltd. |