CN101095198B - 非易失性存储器和擦除该非易失性存储器的方法 - Google Patents
非易失性存储器和擦除该非易失性存储器的方法 Download PDFInfo
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- CN101095198B CN101095198B CN2005800419955A CN200580041995A CN101095198B CN 101095198 B CN101095198 B CN 101095198B CN 2005800419955 A CN2005800419955 A CN 2005800419955A CN 200580041995 A CN200580041995 A CN 200580041995A CN 101095198 B CN101095198 B CN 101095198B
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/025,620 US7450433B2 (en) | 2004-12-29 | 2004-12-29 | Word line compensation in non-volatile memory erase operations |
US11/025,620 | 2004-12-29 | ||
PCT/US2005/045557 WO2006071559A1 (en) | 2004-12-29 | 2005-12-15 | Word line compensation in non-volatile memory erase operations |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101095198A CN101095198A (zh) | 2007-12-26 |
CN101095198B true CN101095198B (zh) | 2010-04-07 |
Family
ID=36101527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800419955A Active CN101095198B (zh) | 2004-12-29 | 2005-12-15 | 非易失性存储器和擦除该非易失性存储器的方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7450433B2 (zh) |
EP (2) | EP2306463B1 (zh) |
JP (2) | JP2008525941A (zh) |
KR (1) | KR100897415B1 (zh) |
CN (1) | CN101095198B (zh) |
TW (1) | TWI316711B (zh) |
WO (1) | WO2006071559A1 (zh) |
Families Citing this family (79)
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US7522457B2 (en) * | 2005-03-31 | 2009-04-21 | Sandisk Corporation | Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage |
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US7499317B2 (en) * | 2006-10-13 | 2009-03-03 | Sandisk Corporation | System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling |
US7495954B2 (en) * | 2006-10-13 | 2009-02-24 | Sandisk Corporation | Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory |
US7535766B2 (en) * | 2006-10-13 | 2009-05-19 | Sandisk Corporation | Systems for partitioned soft programming in non-volatile memory |
US7468911B2 (en) * | 2006-11-02 | 2008-12-23 | Sandisk Corporation | Non-volatile memory using multiple boosting modes for reduced program disturb |
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- 2005-12-15 WO PCT/US2005/045557 patent/WO2006071559A1/en active Application Filing
- 2005-12-15 JP JP2007549433A patent/JP2008525941A/ja active Pending
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- 2005-12-15 EP EP05854307A patent/EP1831894A1/en not_active Withdrawn
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JP2008525941A (ja) | 2008-07-17 |
CN101095198A (zh) | 2007-12-26 |
TW200636731A (en) | 2006-10-16 |
US7606074B2 (en) | 2009-10-20 |
KR100897415B1 (ko) | 2009-05-14 |
EP1831894A1 (en) | 2007-09-12 |
EP2306463B1 (en) | 2013-01-23 |
WO2006071559A1 (en) | 2006-07-06 |
TWI316711B (en) | 2009-11-01 |
KR20070110267A (ko) | 2007-11-16 |
EP2306463A1 (en) | 2011-04-06 |
US20090021983A1 (en) | 2009-01-22 |
JP2011170964A (ja) | 2011-09-01 |
US20060140012A1 (en) | 2006-06-29 |
US7450433B2 (en) | 2008-11-11 |
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