CN101584006B - 非易失性存储器中的经分割的软编程 - Google Patents
非易失性存储器中的经分割的软编程 Download PDFInfo
- Publication number
- CN101584006B CN101584006B CN200780038267.8A CN200780038267A CN101584006B CN 101584006 B CN101584006 B CN 101584006B CN 200780038267 A CN200780038267 A CN 200780038267A CN 101584006 B CN101584006 B CN 101584006B
- Authority
- CN
- China
- Prior art keywords
- subgroup
- voltage
- soft
- soft programming
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
Abstract
Description
Claims (28)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/549,553 | 2006-10-13 | ||
US11/549,553 US7499338B2 (en) | 2006-10-13 | 2006-10-13 | Partitioned soft programming in non-volatile memory |
US11/549,564 US7535766B2 (en) | 2006-10-13 | 2006-10-13 | Systems for partitioned soft programming in non-volatile memory |
US11/549,564 | 2006-10-13 | ||
PCT/US2007/080740 WO2008048810A2 (en) | 2006-10-13 | 2007-10-08 | Partitioned soft programming in non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101584006A CN101584006A (zh) | 2009-11-18 |
CN101584006B true CN101584006B (zh) | 2013-03-13 |
Family
ID=39302937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780038267.8A Expired - Fee Related CN101584006B (zh) | 2006-10-13 | 2007-10-08 | 非易失性存储器中的经分割的软编程 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7499338B2 (zh) |
CN (1) | CN101584006B (zh) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7450433B2 (en) * | 2004-12-29 | 2008-11-11 | Sandisk Corporation | Word line compensation in non-volatile memory erase operations |
US7495954B2 (en) | 2006-10-13 | 2009-02-24 | Sandisk Corporation | Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory |
US7697338B2 (en) * | 2006-11-16 | 2010-04-13 | Sandisk Corporation | Systems for controlled boosting in non-volatile memory soft programming |
US8296337B2 (en) | 2006-12-06 | 2012-10-23 | Fusion-Io, Inc. | Apparatus, system, and method for managing data from a requesting device with an empty data token directive |
US7894263B2 (en) * | 2007-09-28 | 2011-02-22 | Sandisk Corporation | High voltage generation and control in source-side injection programming of non-volatile memory |
KR100932367B1 (ko) * | 2007-11-09 | 2009-12-18 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치의 소프트 프로그램 방법 |
US7836226B2 (en) | 2007-12-06 | 2010-11-16 | Fusion-Io, Inc. | Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment |
US7813169B2 (en) * | 2008-01-18 | 2010-10-12 | Qimonda Flash Gmbh | Integrated circuit and method to operate an integrated circuit |
KR100953055B1 (ko) * | 2008-05-20 | 2010-04-15 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 동작 방법 |
US9021158B2 (en) | 2009-09-09 | 2015-04-28 | SanDisk Technologies, Inc. | Program suspend/resume for memory |
US8972627B2 (en) | 2009-09-09 | 2015-03-03 | Fusion-Io, Inc. | Apparatus, system, and method for managing operations for data storage media |
EP2476039B1 (en) | 2009-09-09 | 2016-10-26 | SanDisk Technologies LLC | Apparatus, system, and method for power reduction management in a storage device |
US9223514B2 (en) | 2009-09-09 | 2015-12-29 | SanDisk Technologies, Inc. | Erase suspend/resume for memory |
US8116140B2 (en) * | 2010-04-09 | 2012-02-14 | Sandisk Technologies Inc. | Saw-shaped multi-pulse programming for program noise reduction in memory |
KR101734204B1 (ko) * | 2010-06-01 | 2017-05-12 | 삼성전자주식회사 | 프로그램 시퀀서를 포함하는 플래시 메모리 장치 및 시스템, 그리고 그것의 프로그램 방법 |
US8984216B2 (en) | 2010-09-09 | 2015-03-17 | Fusion-Io, Llc | Apparatus, system, and method for managing lifetime of a storage device |
KR101155249B1 (ko) * | 2010-11-10 | 2012-06-13 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 소거 방법 |
US9208071B2 (en) | 2010-12-13 | 2015-12-08 | SanDisk Technologies, Inc. | Apparatus, system, and method for accessing memory |
US9218278B2 (en) | 2010-12-13 | 2015-12-22 | SanDisk Technologies, Inc. | Auto-commit memory |
US10817502B2 (en) | 2010-12-13 | 2020-10-27 | Sandisk Technologies Llc | Persistent memory management |
US10817421B2 (en) | 2010-12-13 | 2020-10-27 | Sandisk Technologies Llc | Persistent data structures |
US8385132B2 (en) | 2010-12-22 | 2013-02-26 | Sandisk Technologies Inc. | Alternate bit line bias during programming to reduce channel to floating gate coupling in memory |
CN102543195A (zh) * | 2010-12-29 | 2012-07-04 | 北京兆易创新科技有限公司 | 一种非易失存储器的擦除方法和装置 |
KR20120133594A (ko) * | 2011-05-31 | 2012-12-11 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치의 동작방법 |
KR101821604B1 (ko) * | 2011-07-25 | 2018-01-24 | 삼성전자주식회사 | 비휘발성 메모리 장치의 프로그램 방법 |
KR101654030B1 (ko) * | 2011-12-29 | 2016-09-05 | 인텔 코포레이션 | Nand 메모리 내구성을 개선하는 동적 윈도우 |
KR101893562B1 (ko) | 2012-01-09 | 2018-10-04 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US9019775B2 (en) | 2012-04-18 | 2015-04-28 | Sandisk Technologies Inc. | Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current |
US8787094B2 (en) * | 2012-04-18 | 2014-07-22 | Sandisk Technologies Inc. | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits |
US9183940B2 (en) | 2013-05-21 | 2015-11-10 | Aplus Flash Technology, Inc. | Low disturbance, power-consumption, and latency in NAND read and program-verify operations |
US9263137B2 (en) | 2013-06-27 | 2016-02-16 | Aplus Flash Technology, Inc. | NAND array architecture for multiple simutaneous program and read |
WO2015013689A2 (en) | 2013-07-25 | 2015-01-29 | Aplus Flash Technology, Inc. | Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations |
US9293205B2 (en) | 2013-09-14 | 2016-03-22 | Aplus Flash Technology, Inc | Multi-task concurrent/pipeline NAND operations on all planes |
US8995198B1 (en) | 2013-10-10 | 2015-03-31 | Spansion Llc | Multi-pass soft programming |
WO2015100434A2 (en) | 2013-12-25 | 2015-07-02 | Aplus Flash Technology, Inc | A HYBRID NAND WITH ALL-BL m-PAGE OPERATION SCHEME |
US9666244B2 (en) | 2014-03-01 | 2017-05-30 | Fusion-Io, Inc. | Dividing a storage procedure |
JP2015176628A (ja) * | 2014-03-17 | 2015-10-05 | 株式会社東芝 | 半導体記憶装置及びメモリコントローラ |
US9659636B2 (en) | 2014-07-22 | 2017-05-23 | Peter Wung Lee | NAND memory array with BL-hierarchical structure for concurrent all-BL, all-threshold-state program, and alternative-WL program, odd/even read and verify operations |
US10242743B2 (en) * | 2014-09-06 | 2019-03-26 | NEO Semiconductor, Inc. | Method and apparatus for writing nonvolatile memory using multiple-page programming |
KR102222594B1 (ko) * | 2014-11-13 | 2021-03-08 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것의 소거 방법, 및 그것을 포함하는 메모리 시스템 |
US9933950B2 (en) | 2015-01-16 | 2018-04-03 | Sandisk Technologies Llc | Storage operation interrupt |
US9543023B2 (en) * | 2015-01-23 | 2017-01-10 | Sandisk Technologies Llc | Partial block erase for block programming in non-volatile memory |
CN104934064A (zh) * | 2015-07-07 | 2015-09-23 | 合肥恒烁半导体有限公司 | 一种nand型闪存存储器的块擦除方法 |
CN105976867A (zh) * | 2016-07-06 | 2016-09-28 | 北京兆易创新科技股份有限公司 | 一种存储单元的擦除方法 |
US10074440B2 (en) | 2016-10-28 | 2018-09-11 | Sandisk Technologies Llc | Erase for partially programmed blocks in non-volatile memory |
CN110808077A (zh) * | 2018-08-06 | 2020-02-18 | 三星电子株式会社 | 非易失性存储器装置及操作其的方法 |
CN110838332A (zh) * | 2018-08-17 | 2020-02-25 | 北京兆易创新科技股份有限公司 | 一种存储数据的擦除方法及装置 |
KR102569820B1 (ko) * | 2018-10-25 | 2023-08-24 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 그 동작 방법 |
US11656673B2 (en) * | 2019-12-30 | 2023-05-23 | Micron Technology, Inc. | Managing reduced power memory operations |
TWI712041B (zh) * | 2020-03-25 | 2020-12-01 | 旺宏電子股份有限公司 | 多層次三維記憶體之抹除方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1428867A (zh) * | 2001-12-27 | 2003-07-09 | 株式会社东芝 | 在单个存储单元中存储多值数据的非易失性半导体存储器 |
CN1582498A (zh) * | 2000-08-15 | 2005-02-16 | 自由度半导体公司 | 非易失存储器,及其制造和编程方法 |
CN1658329A (zh) * | 2004-02-19 | 2005-08-24 | 恩益禧电子股份有限公司 | 非易失半导体存储设备以及在其中编程的方法 |
WO2006105133A1 (en) * | 2005-03-31 | 2006-10-05 | Sandisk Corporation | Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells |
WO2006105120A1 (en) * | 2005-03-31 | 2006-10-05 | Sandisk Corporation | Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4489400A (en) * | 1982-03-01 | 1984-12-18 | Texas Instruments Incorporated | Serially banked read only memory |
DE3468592D1 (en) * | 1984-05-07 | 1988-02-11 | Itt Ind Gmbh Deutsche | Semiconductor memory cell having an electrically floating memory gate |
JP3099887B2 (ja) * | 1990-04-12 | 2000-10-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5428568A (en) * | 1991-10-30 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Electrically erasable and programmable non-volatile memory device and a method of operating the same |
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US5452251A (en) * | 1992-12-03 | 1995-09-19 | Fujitsu Limited | Semiconductor memory device for selecting and deselecting blocks of word lines |
US5491809A (en) * | 1993-01-05 | 1996-02-13 | Texas Instruments Incorporated | Smart erase algorithm with secure scheme for flash EPROMs |
KR0169267B1 (ko) * | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
KR970005644B1 (ko) * | 1994-09-03 | 1997-04-18 | 삼성전자 주식회사 | 불휘발성 반도체 메모리장치의 멀티블럭 소거 및 검증장치 및 그 방법 |
US5808338A (en) * | 1994-11-11 | 1998-09-15 | Nkk Corporation | Nonvolatile semiconductor memory |
US5625600A (en) * | 1995-05-05 | 1997-04-29 | United Microelectronics Corporation | Flash memory array with self-limiting erase |
WO1997008707A1 (fr) * | 1995-08-31 | 1997-03-06 | Hitachi, Ltd. | Dispositif de memoire non volatile a semi-conducteur et systeme informatique faisant appel a ce dispositif |
KR0172408B1 (ko) * | 1995-12-11 | 1999-03-30 | 김광호 | 다수상태 불휘발성 반도체 메모리 및 그의 구동방법 |
JP3481817B2 (ja) * | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
US5963477A (en) * | 1997-12-09 | 1999-10-05 | Macronix International Co., Ltd. | Flash EPROM erase algorithm with wordline level retry |
US6587903B2 (en) * | 1998-02-27 | 2003-07-01 | Micron Technology, Inc. | Soft programming for recovery of overerasure |
JP3905979B2 (ja) * | 1998-06-03 | 2007-04-18 | 株式会社東芝 | 不揮発性半導体メモリ |
US5995417A (en) | 1998-10-20 | 1999-11-30 | Advanced Micro Devices, Inc. | Scheme for page erase and erase verify in a non-volatile memory array |
US6041001A (en) * | 1999-02-25 | 2000-03-21 | Lexar Media, Inc. | Method of increasing data reliability of a flash memory device without compromising compatibility |
TW439293B (en) * | 1999-03-18 | 2001-06-07 | Toshiba Corp | Nonvolatile semiconductor memory |
JP3892612B2 (ja) * | 1999-04-09 | 2007-03-14 | 株式会社東芝 | 半導体装置 |
US6198662B1 (en) * | 1999-06-24 | 2001-03-06 | Amic Technology, Inc. | Circuit and method for pre-erasing/erasing flash memory array |
US6166962A (en) * | 1999-06-24 | 2000-12-26 | Amic Technology, Inc. | Circuit and method for conditioning flash memory array |
US6122198A (en) * | 1999-08-13 | 2000-09-19 | Advanced Micro Devices, Inc. | Bit by bit APDE verify for flash memory applications |
US6452840B1 (en) * | 2000-10-21 | 2002-09-17 | Advanced Micro Devices, Inc. | Feedback method to optimize electric field during channel erase of flash memory devices |
KR100381954B1 (ko) * | 2000-10-26 | 2003-04-26 | 삼성전자주식회사 | 메모리 셀의 과소거를 방지할 수 있는 소거 방법 및그것을 이용한 플래시 메모리 장치 |
KR100407572B1 (ko) * | 2001-01-10 | 2003-12-01 | 삼성전자주식회사 | 낸드형 플래쉬 메모리 장치에서의 셀 드레쉬홀드 전압의분포를 개선하는 방법 |
DE60140039D1 (de) * | 2001-02-05 | 2009-11-12 | St Microelectronics Srl | Löschverfahren für einen Flash-Speicher |
US6620682B1 (en) * | 2001-02-27 | 2003-09-16 | Aplus Flash Technology, Inc. | Set of three level concurrent word line bias conditions for a nor type flash memory array |
US6381174B1 (en) * | 2001-03-12 | 2002-04-30 | Micron Technology, Inc. | Non-volatile memory device with redundant columns |
JP2002319286A (ja) * | 2001-04-19 | 2002-10-31 | Hitachi Ltd | 不揮発性記憶装置および記憶システム |
US6522585B2 (en) * | 2001-05-25 | 2003-02-18 | Sandisk Corporation | Dual-cell soft programming for virtual-ground memory arrays |
US6421276B1 (en) * | 2001-08-09 | 2002-07-16 | Tower Semiconductor Ltd. | Method and apparatus for controlling erase operations of a non-volatile memory system |
JP3974778B2 (ja) * | 2001-12-26 | 2007-09-12 | シャープ株式会社 | 不揮発性半導体メモリ装置およびそのデータ消去方法 |
US6661711B2 (en) * | 2002-02-06 | 2003-12-09 | Sandisk Corporation | Implementation of an inhibit during soft programming to tighten an erase voltage distribution |
JP2003242787A (ja) * | 2002-02-14 | 2003-08-29 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
WO2003073433A1 (fr) * | 2002-02-28 | 2003-09-04 | Renesas Technology Corp. | Memoire a semi-conducteurs non volatile |
KR100476889B1 (ko) * | 2002-04-04 | 2005-03-17 | 삼성전자주식회사 | 플래쉬메모리의 워드라인디코더 |
JP4170682B2 (ja) * | 2002-06-18 | 2008-10-22 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
US6894931B2 (en) * | 2002-06-20 | 2005-05-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US6862223B1 (en) * | 2002-07-05 | 2005-03-01 | Aplus Flash Technology, Inc. | Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout |
US6891752B1 (en) | 2002-07-31 | 2005-05-10 | Advanced Micro Devices | System and method for erase voltage control during multiple sector erase of a flash memory device |
US6842380B2 (en) * | 2002-08-27 | 2005-01-11 | Micron Technology, Inc. | Method and apparatus for erasing memory |
JP4005895B2 (ja) * | 2002-09-30 | 2007-11-14 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
US6771541B1 (en) * | 2003-02-25 | 2004-08-03 | Nexflash Technologies, Inc. | Method and apparatus for providing row redundancy in nonvolatile semiconductor memory |
DE60301851D1 (de) * | 2003-02-28 | 2005-11-17 | St Microelectronics Srl | Gatterspannungsteuerungssystem eines nichtflüchtigen Speichers und eine Programmierungs- und Weichprogrammierungsfase |
US6859397B2 (en) * | 2003-03-05 | 2005-02-22 | Sandisk Corporation | Source side self boosting technique for non-volatile memory |
JP4220319B2 (ja) * | 2003-07-04 | 2009-02-04 | 株式会社東芝 | 不揮発性半導体記憶装置およびそのサブブロック消去方法 |
JP4287222B2 (ja) * | 2003-09-03 | 2009-07-01 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6958936B2 (en) * | 2003-09-25 | 2005-10-25 | Sandisk Corporation | Erase inhibit in non-volatile memories |
US7009889B2 (en) * | 2004-05-28 | 2006-03-07 | Sandisk Corporation | Comprehensive erase verification for non-volatile memory |
US7450433B2 (en) * | 2004-12-29 | 2008-11-11 | Sandisk Corporation | Word line compensation in non-volatile memory erase operations |
KR100673170B1 (ko) * | 2005-03-10 | 2007-01-22 | 주식회사 하이닉스반도체 | 향상된 소거 기능을 가지는 플래쉬 메모리 장치 및 그 소거동작 제어 방법 |
US7403424B2 (en) * | 2005-03-31 | 2008-07-22 | Sandisk Corporation | Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells |
KR100697285B1 (ko) * | 2005-05-11 | 2007-03-20 | 삼성전자주식회사 | 워드라인과 선택라인 사이에 보호라인을 가지는 낸드플래시 메모리 장치 |
EP1729306A1 (en) * | 2005-06-01 | 2006-12-06 | STMicroelectronics S.r.l. | NAND flash memory device with compacted cell threshold voltage distribution |
-
2006
- 2006-10-13 US US11/549,553 patent/US7499338B2/en active Active
-
2007
- 2007-10-08 CN CN200780038267.8A patent/CN101584006B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1582498A (zh) * | 2000-08-15 | 2005-02-16 | 自由度半导体公司 | 非易失存储器,及其制造和编程方法 |
CN1428867A (zh) * | 2001-12-27 | 2003-07-09 | 株式会社东芝 | 在单个存储单元中存储多值数据的非易失性半导体存储器 |
CN1658329A (zh) * | 2004-02-19 | 2005-08-24 | 恩益禧电子股份有限公司 | 非易失半导体存储设备以及在其中编程的方法 |
WO2006105133A1 (en) * | 2005-03-31 | 2006-10-05 | Sandisk Corporation | Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells |
WO2006105120A1 (en) * | 2005-03-31 | 2006-10-05 | Sandisk Corporation | Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells |
Also Published As
Publication number | Publication date |
---|---|
US20080089132A1 (en) | 2008-04-17 |
CN101584006A (zh) | 2009-11-18 |
US7499338B2 (en) | 2009-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101584006B (zh) | 非易失性存储器中的经分割的软编程 | |
CN101584005B (zh) | 非易失性存储器中的经分割擦除及擦除验证 | |
CN101405812B (zh) | 编程不同大小的容限及在选择状态下使用补偿进行感测以改进非易失性存储器中的读取操作 | |
CN102160118B (zh) | 非易失性存储器阵列的最后字线的数据保持的改进 | |
CN101095198B (zh) | 非易失性存储器和擦除该非易失性存储器的方法 | |
CN101006519B (zh) | 非易失性存储器系统及其编程的方法 | |
CN102549673B (zh) | 用较小通道电压干扰和浮栅极到控制栅极泄漏对存储器编程 | |
CN102150216B (zh) | 具有降低的数据存储要求的存储器的多遍编程 | |
CN102306501B (zh) | 编程不同大小的容限及在选择状态下使用补偿进行感测以改进非易失性存储器中的读取操作 | |
CN102138182B (zh) | 编程并选择性地擦除非易失性存储器 | |
CN101595529B (zh) | 非易失性存储器软编程中的受控升压 | |
CN101689400B (zh) | 基于阈值电压分布的动态检验 | |
CN102576567B (zh) | 用于非易失性存储器中的增强沟道升压的减小的编程脉宽 | |
CN102292775B (zh) | 存储器的适应性擦除和软编程 | |
CN100568392C (zh) | 用于非易失性存储器的自升压技术 | |
CN101095197B (zh) | 浮动栅极之间的耦合效应减小的nand电可擦除可编程只读存储器 | |
CN101589436B (zh) | 在非易失性存储器中使用多个升压模式减少程序干扰 | |
CN101213614B (zh) | 擦除非易失性存储器的方法和装置 | |
CN101199024B (zh) | 利用改变字线条件来补偿较慢擦除的存储器单元以擦除非易失性存储器 | |
CN102985976B (zh) | 包括减小其他存储单元的影响的对非易失性存储器的编程 | |
CN102138183B (zh) | 对非易失性存储器的选择性擦除操作 | |
CN102099867B (zh) | 非易失性存储器的擦除-验证处理 | |
CN102576566B (zh) | 使用浮置位线对非易失性存储器的部分速度和全速度编程 | |
CN101218651B (zh) | 非易失性存储器系统及软编程方法 | |
CN107112047A (zh) | 用于在非易失性存储器中区块编程的部分区块擦除 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORPORATION Effective date: 20121102 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121102 Address after: American Texas Applicant after: Sandisk Corp. Address before: American California Applicant before: Sandisk Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: American Texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: American Texas Patentee before: Sandisk Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20191008 |