CN101584005B - 非易失性存储器中的经分割擦除及擦除验证 - Google Patents
非易失性存储器中的经分割擦除及擦除验证 Download PDFInfo
- Publication number
- CN101584005B CN101584005B CN2007800381675A CN200780038167A CN101584005B CN 101584005 B CN101584005 B CN 101584005B CN 2007800381675 A CN2007800381675 A CN 2007800381675A CN 200780038167 A CN200780038167 A CN 200780038167A CN 101584005 B CN101584005 B CN 101584005B
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- China
- Prior art keywords
- son group
- wipe
- memory cell
- memory element
- erasing voltage
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- Read Only Memory (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/549,515 | 2006-10-13 | ||
US11/549,515 US7495954B2 (en) | 2006-10-13 | 2006-10-13 | Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory |
US11/549,533 US7499317B2 (en) | 2006-10-13 | 2006-10-13 | System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling |
US11/549,533 | 2006-10-13 | ||
PCT/US2007/080626 WO2008048798A1 (en) | 2006-10-13 | 2007-10-05 | Partitioned erase and erase verification in non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101584005A CN101584005A (zh) | 2009-11-18 |
CN101584005B true CN101584005B (zh) | 2012-08-29 |
Family
ID=39302939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800381675A Expired - Fee Related CN101584005B (zh) | 2006-10-13 | 2007-10-05 | 非易失性存储器中的经分割擦除及擦除验证 |
Country Status (2)
Country | Link |
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US (1) | US7499317B2 (zh) |
CN (1) | CN101584005B (zh) |
Families Citing this family (45)
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US9286198B2 (en) | 2005-04-21 | 2016-03-15 | Violin Memory | Method and system for storage of data in non-volatile media |
US8452929B2 (en) * | 2005-04-21 | 2013-05-28 | Violin Memory Inc. | Method and system for storage of data in non-volatile media |
US8200887B2 (en) | 2007-03-29 | 2012-06-12 | Violin Memory, Inc. | Memory management system and method |
US7495954B2 (en) | 2006-10-13 | 2009-02-24 | Sandisk Corporation | Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory |
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WO2008070812A2 (en) | 2006-12-06 | 2008-06-12 | Fusion Multisystems, Inc. (Dba Fusion-Io) | Apparatus, system, and method for data storage using progressive raid |
KR100811274B1 (ko) * | 2006-12-28 | 2008-03-07 | 주식회사 하이닉스반도체 | 낸드형 플래쉬 메모리소자의 데이터 소거방법 |
US7468920B2 (en) * | 2006-12-30 | 2008-12-23 | Sandisk Corporation | Applying adaptive body bias to non-volatile storage |
US9632870B2 (en) | 2007-03-29 | 2017-04-25 | Violin Memory, Inc. | Memory system with multiple striping of raid groups and method for performing the same |
US11010076B2 (en) | 2007-03-29 | 2021-05-18 | Violin Systems Llc | Memory system with multiple striping of raid groups and method for performing the same |
US7836226B2 (en) | 2007-12-06 | 2010-11-16 | Fusion-Io, Inc. | Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment |
US7813169B2 (en) * | 2008-01-18 | 2010-10-12 | Qimonda Flash Gmbh | Integrated circuit and method to operate an integrated circuit |
JP2009252278A (ja) * | 2008-04-04 | 2009-10-29 | Toshiba Corp | 不揮発性半導体記憶装置及びメモリシステム |
CN102576330B (zh) * | 2009-06-12 | 2015-01-28 | 提琴存储器公司 | 具有持久化无用单元收集机制的存储系统 |
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KR101689420B1 (ko) | 2009-09-09 | 2016-12-23 | 샌디스크 테크놀로지스 엘엘씨 | 저장 장치의 전력 감소 관리를 위한 장치, 시스템, 및 방법 |
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US8984216B2 (en) | 2010-09-09 | 2015-03-17 | Fusion-Io, Llc | Apparatus, system, and method for managing lifetime of a storage device |
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US10817421B2 (en) | 2010-12-13 | 2020-10-27 | Sandisk Technologies Llc | Persistent data structures |
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KR20130072665A (ko) * | 2011-12-22 | 2013-07-02 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 동작 방법 |
WO2013101043A1 (en) * | 2011-12-29 | 2013-07-04 | Intel Corporation | Dynamic window to improve nand memory endurance |
US9019775B2 (en) | 2012-04-18 | 2015-04-28 | Sandisk Technologies Inc. | Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current |
US8787094B2 (en) | 2012-04-18 | 2014-07-22 | Sandisk Technologies Inc. | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits |
US8713406B2 (en) * | 2012-04-30 | 2014-04-29 | Freescale Semiconductor, Inc. | Erasing a non-volatile memory (NVM) system having error correction code (ECC) |
US9225356B2 (en) | 2012-11-12 | 2015-12-29 | Freescale Semiconductor, Inc. | Programming a non-volatile memory (NVM) system having error correction code (ECC) |
US9224494B2 (en) | 2014-01-10 | 2015-12-29 | Sandisk Technologies Inc. | Erase speed adjustment for endurance of non-volatile storage |
US9666244B2 (en) | 2014-03-01 | 2017-05-30 | Fusion-Io, Inc. | Dividing a storage procedure |
US9361990B1 (en) * | 2014-12-18 | 2016-06-07 | SanDisk Technologies, Inc. | Time domain ramp rate control for erase inhibit in flash memory |
US9933950B2 (en) | 2015-01-16 | 2018-04-03 | Sandisk Technologies Llc | Storage operation interrupt |
KR102376505B1 (ko) * | 2016-01-13 | 2022-03-18 | 삼성전자주식회사 | 불휘발성 메모리 장치 내 소거 불량 워드라인 검출 방법 |
US9711228B1 (en) * | 2016-05-27 | 2017-07-18 | Micron Technology, Inc. | Apparatus and methods of operating memory with erase de-bias |
US10340017B2 (en) * | 2017-11-06 | 2019-07-02 | Macronix International Co., Ltd. | Erase-verify method for three-dimensional memories and memory system |
US10580506B2 (en) * | 2017-12-07 | 2020-03-03 | Micron Technology, Inc. | Semiconductor memory device and erase method including changing erase pulse magnitude for a memory array |
KR102441551B1 (ko) * | 2018-01-30 | 2022-09-08 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그것의 동작 방법 |
JP7332343B2 (ja) * | 2019-05-28 | 2023-08-23 | キオクシア株式会社 | 半導体記憶装置 |
US11527287B1 (en) * | 2021-05-27 | 2022-12-13 | Micron Technology, Inc. | Drift aware read operations |
CN113409872B (zh) * | 2021-06-30 | 2024-03-12 | 芯天下技术股份有限公司 | 一种抑制闪存过擦除的方法、装置、电子设备及存储介质 |
Citations (1)
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CN1610124A (zh) * | 2003-10-20 | 2005-04-27 | 旺宏电子股份有限公司 | 集成电路元件与位元组抹除的方法 |
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2006
- 2006-10-13 US US11/549,533 patent/US7499317B2/en active Active
-
2007
- 2007-10-05 CN CN2007800381675A patent/CN101584005B/zh not_active Expired - Fee Related
Patent Citations (1)
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CN1610124A (zh) * | 2003-10-20 | 2005-04-27 | 旺宏电子股份有限公司 | 集成电路元件与位元组抹除的方法 |
Also Published As
Publication number | Publication date |
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US7499317B2 (en) | 2009-03-03 |
US20080089135A1 (en) | 2008-04-17 |
CN101584005A (zh) | 2009-11-18 |
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