CN101044594B - 衬底处理方法、曝光装置及器件制造方法 - Google Patents
衬底处理方法、曝光装置及器件制造方法 Download PDFInfo
- Publication number
- CN101044594B CN101044594B CN2005800359899A CN200580035989A CN101044594B CN 101044594 B CN101044594 B CN 101044594B CN 2005800359899 A CN2005800359899 A CN 2005800359899A CN 200580035989 A CN200580035989 A CN 200580035989A CN 101044594 B CN101044594 B CN 101044594B
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- China
- Prior art keywords
- substrate
- liquid
- exposure
- immersion
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP310993/2004 | 2004-10-26 | ||
| JP2004310993 | 2004-10-26 | ||
| PCT/JP2005/019604 WO2006046562A1 (ja) | 2004-10-26 | 2005-10-25 | 基板処理方法、露光装置及びデバイス製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101407110A Division CN101866113B (zh) | 2004-10-26 | 2005-10-25 | 衬底处理方法、曝光装置及器件制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101044594A CN101044594A (zh) | 2007-09-26 |
| CN101044594B true CN101044594B (zh) | 2010-05-12 |
Family
ID=36227803
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800359899A Expired - Fee Related CN101044594B (zh) | 2004-10-26 | 2005-10-25 | 衬底处理方法、曝光装置及器件制造方法 |
| CN2010101407110A Expired - Fee Related CN101866113B (zh) | 2004-10-26 | 2005-10-25 | 衬底处理方法、曝光装置及器件制造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101407110A Expired - Fee Related CN101866113B (zh) | 2004-10-26 | 2005-10-25 | 衬底处理方法、曝光装置及器件制造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8040489B2 (enExample) |
| EP (1) | EP1814144B1 (enExample) |
| JP (2) | JP4665712B2 (enExample) |
| KR (2) | KR101236120B1 (enExample) |
| CN (2) | CN101044594B (enExample) |
| TW (1) | TWI436403B (enExample) |
| WO (1) | WO2006046562A1 (enExample) |
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| TW200511388A (en) | 2003-06-13 | 2005-03-16 | Nikon Corp | Exposure method, substrate stage, exposure apparatus and method for manufacturing device |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2005055296A1 (ja) | 2003-12-03 | 2005-06-16 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法、並びに光学部品 |
| JP4220423B2 (ja) | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
| JP4665712B2 (ja) * | 2004-10-26 | 2011-04-06 | 株式会社ニコン | 基板処理方法、露光装置及びデバイス製造方法 |
| KR20070100865A (ko) | 2004-12-06 | 2007-10-12 | 가부시키가이샤 니콘 | 기판 처리 방법, 노광 방법, 노광 장치 및 디바이스 제조방법 |
| WO2006101120A1 (ja) * | 2005-03-23 | 2006-09-28 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
| WO2006118258A1 (ja) | 2005-04-28 | 2006-11-09 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
| JP4718893B2 (ja) * | 2005-05-13 | 2011-07-06 | 株式会社東芝 | パターン形成方法 |
| US20090033896A1 (en) * | 2005-06-28 | 2009-02-05 | Hiroyuki Nagasaka | Exposure apparatus and method, and device manufacturing method |
| US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| WO2007135990A1 (ja) * | 2006-05-18 | 2007-11-29 | Nikon Corporation | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
| JP2008004928A (ja) * | 2006-05-22 | 2008-01-10 | Nikon Corp | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
| JP4994976B2 (ja) * | 2006-07-18 | 2012-08-08 | 東京エレクトロン株式会社 | 高屈折率液体循環システム、パターン形成方法およびコンピュータ読取可能な記憶媒体 |
| JP2008042004A (ja) * | 2006-08-08 | 2008-02-21 | Tokyo Electron Ltd | パターン形成方法およびパターン形成装置 |
| US8570484B2 (en) | 2006-08-30 | 2013-10-29 | Nikon Corporation | Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid |
| WO2008029884A1 (en) * | 2006-09-08 | 2008-03-13 | Nikon Corporation | Cleaning member, cleaning method and device manufacturing method |
| JP4807749B2 (ja) * | 2006-09-15 | 2011-11-02 | 東京エレクトロン株式会社 | 露光・現像処理方法 |
| JP4926678B2 (ja) * | 2006-12-04 | 2012-05-09 | 東京エレクトロン株式会社 | 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体 |
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| NL2004808A (en) * | 2009-06-30 | 2011-01-12 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
| JP5402664B2 (ja) * | 2010-01-19 | 2014-01-29 | 株式会社ニコン | 洗浄方法、露光装置、及びデバイスの製造方法 |
| NL2008168A (en) * | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | Method of calculating model parameters of a substrate, a lithographic apparatus and an apparatus for controlling lithographic processing by a lithographic apparatus. |
| JP6099883B2 (ja) * | 2011-05-24 | 2017-03-22 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び部品 |
| CN107615169B (zh) * | 2015-05-28 | 2021-02-23 | 株式会社尼康 | 物体保持装置、曝光装置、平板显示器的制造方法及器件制造方法 |
| US11014103B2 (en) * | 2017-07-26 | 2021-05-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Substrate processing apparatus and substrate processing method |
| CN107255907B (zh) * | 2017-08-17 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种补偿装置、曝光装置及曝光补偿方法 |
| CN107561747A (zh) * | 2017-10-12 | 2018-01-09 | 惠科股份有限公司 | 一种显示基板的预烘烤装置及预烘烤系统 |
| TWI673567B (zh) * | 2018-02-13 | 2019-10-01 | 特銓股份有限公司 | 光罩靜電清潔設備以及光罩靜電清潔方法 |
| CN110597021B (zh) * | 2019-09-20 | 2021-04-23 | 上海华力微电子有限公司 | 浸没式光刻工艺中晶圆表面残水缺陷的改善方法 |
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| JP2006080143A (ja) * | 2004-09-07 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
| JP4665712B2 (ja) | 2004-10-26 | 2011-04-06 | 株式会社ニコン | 基板処理方法、露光装置及びデバイス製造方法 |
| US7732123B2 (en) * | 2004-11-23 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion photolithography with megasonic rinse |
| US7446850B2 (en) * | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7196770B2 (en) * | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| US8383322B2 (en) * | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
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2005
- 2005-10-25 JP JP2005309546A patent/JP4665712B2/ja not_active Expired - Fee Related
- 2005-10-25 WO PCT/JP2005/019604 patent/WO2006046562A1/ja not_active Ceased
- 2005-10-25 US US11/666,165 patent/US8040489B2/en not_active Expired - Fee Related
- 2005-10-25 CN CN2005800359899A patent/CN101044594B/zh not_active Expired - Fee Related
- 2005-10-25 EP EP05805228A patent/EP1814144B1/en not_active Expired - Lifetime
- 2005-10-25 KR KR1020077003267A patent/KR101236120B1/ko not_active Expired - Fee Related
- 2005-10-25 KR KR1020127016035A patent/KR101285951B1/ko not_active Expired - Fee Related
- 2005-10-25 TW TW094137268A patent/TWI436403B/zh not_active IP Right Cessation
- 2005-10-25 CN CN2010101407110A patent/CN101866113B/zh not_active Expired - Fee Related
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2008
- 2008-06-09 US US12/155,714 patent/US8941808B2/en not_active Expired - Fee Related
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2010
- 2010-04-05 JP JP2010087338A patent/JP5408006B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-13 US US13/137,789 patent/US20120008112A1/en not_active Abandoned
Non-Patent Citations (2)
| Title |
|---|
| JP特开2001-319849A 2001.11.16 |
| JP特开2002-343698A 2002.11.29 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1814144A4 (en) | 2010-01-06 |
| US8941808B2 (en) | 2015-01-27 |
| KR101285951B1 (ko) | 2013-07-12 |
| US20120008112A1 (en) | 2012-01-12 |
| CN101044594A (zh) | 2007-09-26 |
| TWI436403B (zh) | 2014-05-01 |
| JP4665712B2 (ja) | 2011-04-06 |
| CN101866113A (zh) | 2010-10-20 |
| EP1814144B1 (en) | 2012-06-06 |
| CN101866113B (zh) | 2013-04-24 |
| KR101236120B1 (ko) | 2013-02-28 |
| WO2006046562A1 (ja) | 2006-05-04 |
| JP2006156974A (ja) | 2006-06-15 |
| US20080143980A1 (en) | 2008-06-19 |
| TW200631073A (en) | 2006-09-01 |
| JP5408006B2 (ja) | 2014-02-05 |
| JP2010177693A (ja) | 2010-08-12 |
| US20080246931A1 (en) | 2008-10-09 |
| US8040489B2 (en) | 2011-10-18 |
| KR20120075497A (ko) | 2012-07-06 |
| EP1814144A1 (en) | 2007-08-01 |
| HK1147567A1 (en) | 2011-08-12 |
| KR20070068341A (ko) | 2007-06-29 |
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