CN100378903C - 调节半导体晶片和/或混合电路的方法和装置 - Google Patents
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Abstract
本发明提供一种调节半导体晶片和/或混合波导联结的方法,具有以下步骤:准备一个空间(1),该空间(1)至少部分被封上并且有一个里面装有晶片/混合波导联结的装置(10),所述里面装有晶片/混合波导联结的装置(10)在所述空间内并用于放置半导体晶片和/或混合波导联结;引导干燥流体通过所述里面装有晶片/混合波导联结的装置(10)以对该里面装有晶片/混合波导联结的装置(10)进行加热处理;离开所述里面装有晶片/混合波导联结的装置(10)的流体的至少一部分用于调节所述空间(1)内的空气。本发明还提供一种相应的用于调节半导体晶片和/或混合波导联结的装置。
Description
技术领域
本发明涉及一种调节半导体晶片和/或混合电路的方法和装置。
背景技术
人们熟知一般在-200℃到+400℃的范围内对半导体晶片进行试验测量。对于加热处理来说,在其试样阶段使用一个半导体晶片,根据想要的温度对该试样台架进行冷却和/或加热。在此过程中,确保半导体晶片的温度不低于周围的气体介质的露点是非常必要的,否则,水蒸气就会凝结在晶片的表面或会出现结冰现象,这样会阻碍或妨碍试验测量的进行。
图5示出了一种调节装置的截面示意图,该图用来说明作为本发明基础的问题。
图4,参考符号1表示一个容器5内的空间,在此空间内提供一个温度能够被控制的试样台架10,在此台架上放置一个半导体晶片(未示出)用来进行试验。所述容器5的体积一般在400至800升之间。
所述空间1基本上被所述容器5的壁所封上,容器5有用于电力线路和介质供应线路的套管,以及,如果适当的话,还有探测器的套管,该探测器要连到所述半导体晶片的外部,并且所述半导体晶片利用此探测器进行试样测量。不过,根据用途,所述容器5不必将此空间1密封,但也必须封闭到一个程度,这个程度就是能够通过形成一个内部过压来避免并不希望的周围的潮湿空气的进入。
所述试样台架10(也称为卡盘)有一热绝缘15,试样台架通过该热绝缘连接到一个通常是可移动的机座20上。一个相应的移动装置(未示出)一般可按照X、Y和Z的方向调节。如果该移动装置并不位于所述容器内,就必须在所述机座于容器之间进行密封。
进一步来说,在所述试样台架10加上一个加热装置90,该加热装置90可由用于加热的电流从外部提供,且这个加热装置有一个温度探测器(未示出)。
参考符号100表示一个露点传感器,通过该传感器来确定所述容器内的露点,且该传感器能够向容器5外面的监测器101提供相应的信号。所述露点传感器100专门用于打开容器时的可靠性检测,打开所述装置是为了,例如,进行补偿性加热,以避免凝结水。
再者,通过流出元件30(oBdA,仅示出两个),来自外部的干燥空气或类似的流体,如氮气,就能够经过一条线r1而进入所述容器,以从该容器中将周围的潮湿空气逐出。先将该空气通过一条线r00加到外部的空气干燥器3中,然后加到所述线r1中。
通过相应的电力线11和介质供应线r2将一独立的单元连接到所述容器5上,该独立单元是含有以下装置的温度控制架2。
参考符号80表示一个温度控制器,该温度控制器能够通过所述加热装置90来调节所述试样台架10的温度,同时或作为一种选择,该试样台架10可以置于空气中以便冷却,这会在下面详细描述。
参考符号70表示一个温度调节装置,来自,例如,气瓶或气体干燥器的干燥空气通过所述线r0和i1提供给该温度调节装置,该温度调节装置有一个连接到冷却组件71和72的热交换器95,通过所述冷却组件,该热交换器95就能够被冷却到预定的温度。
通过所述线r0和i1提供的干燥空气通过所述热交换器95导入,然后被通过供应线r2加入所述容器5中到达所述试样台架10,通过所述试样台架10,所述干燥空气穿过相应的冷却线圈或冷却管(未示出)。已将所述试样台架10冷却的干燥空气通过线r3离开所述试样台架10并被导出到所述容器5外面的空气中。
为了调节所述容器5的空气而通过所述流出元件30导入所述容器5的干燥空气的温度通常保持在室温,以使只有所述试样台架10的表面的温度保持在想要的测量温度,如-20℃,而所述容器5中的其它元件的温度大致保持在室温。通过所述流出元件30导入的干燥空气通过开口或缝隙(未示出)或单独的出口线流出所述容器5。
干燥空气的消耗量较大,因为一方面用于调节空气而另一方面用于冷却所述试样台架10的所述干燥空气被吹动并穿过所述容器5而进入大气中,在这种已知的用于调节半导体晶片的装置中证明没有好处。因此,干燥空气的消耗量就相对较大。空气干燥器3的故障也会导致所述试验晶片在相应的温度立即结冰。
发明内容
出于此原因,本发明的目的是提供调节半导体晶片和/或混合电路的、能够允许更多的有效调节的一种方法和一种装置。
本发明所述的调节半导体晶片和/或混合电路的方法,具有以下步骤:
准备一个空间1,该空间1至少部分被封上并且有一个里面装有半导体晶片和/或混合电路的装置10,所述里面装有半导体晶片和/或混合电路的装置10在所述空间1内并用于放置半导体晶片和/或混合电路;
引导干燥流体通过所述里面装有半导体晶片和/或混合电路的装置10以对所述里面装有半导体晶片和/或混合电路的装置10进行加热处理;
其特征在于:离开所述里面装有半导体晶片和/或混合电路的装置10的流体的至少一部分用于调节所述空间1内的空气。
本发明所述的调节半导体晶片和/或混合电路的装置,具有:
一个空间1,该空间1至少部分被封上并且有一个里面装有半导体晶片和/或混合电路的装置10,所述里面装有半导体晶片和/或混合电路的装置10在所述空间内并用于放置半导体晶片和/或混合电路;
一个线装置r2、r3、r4、r5、i3和i4,该线装置用于引导干燥流体穿过所述里面装有半导体晶片和/或混合电路的装置10来对所述里面装有半导体晶片和/或混合电路的装置10进行加热处理,并且将离开所述里面装有半导体晶片和/或混合电路的装置10的流体的至少一部分导入所述空间1内用来调节所述空间1内的空气。
与已知的解决方法相比,本发明所述的调节半导体晶片和/或混合电路的方法和装置具有能够有效利用所述干燥气体的优点,如干燥空气。本发明的其它优点是高水平的运行可靠性和能够保证不结冰和不冷凝,因为离开里面装有所述晶片/或混合波导联结的装置的干燥空气总是低于里面装有所述晶片/或混合波导联结的装置的温度的露点。
本发明所根据的想法是将离开里面装有所述晶片/或混合波导联结的装置的气体中的一部分用来调节所述空间内的空气。因此在本发明中,冷却空气在同时至少有一部分用作干燥空气。如果该部分空气先进行加热处理然后再使其离开所述空间,这样做就很有好处。
例如,这部分空气先在容器外进行加热处理,然后再加入该容器中。这个例子的一个特别的好处是通过相应地从所述试样台架将空气返回到所述容器的外部,能够达到高水平的冷却效果。换言之,返回的、被冷却的空气既可以用来对加入的干燥空气进行预冷却,也可以用来冷却具体的组件,而不仅仅是用来冷却里面装有所述晶片/或混合波导联结的装置。
不过,作为一种选择或附加,还可以允许所述空气的一部分在其离开所述试样台架之后直接离开所述容器。由于允许其以任何温度直接流出并不有利,所以为这一部分空气安装一个相应的调节阀。
在从属权利要求中给出了本发明的各个主题的优点。
根据一个优选实施例,所述线装置有一个第一线,通过该第一线能够将所述流体从所述空间的外部导入所述的里面装有所述晶片/或混合波导联结的装置;一个第二线,通过该第二线能够将所述流体从所述的里面装有所述晶片/或混合波导联结的装置导向所述空间的外部;一个第三线,通过该第三线能够将所述流体从所述空间的外部返回到所述空间内。在所述第二与第三线之间安装一个温度调节装置。
根据另一个优选实施例,在所述第三线的末端安装流出元件。
根据另一个优选实施例,所述线装置有一个第一线,通过该第一线能够将所述流体从所述空间的外部导入所述的里面装有所述晶片/或混合波导联结的装置;一个第四线,通过该第四线能够将所述流体从所述的里面装有所述晶片/或混合波导联结的装置导向所述空间的内部。
根据另一个优选实施例,所述线装置有一个第二线,通过该第二线能够将所述流体从所述的里面装有所述晶片/或混合波导联结的装置导向所述空间的外部;一个第三线,通过该第三线能够将所述流体从所述空间的外部返回到所述空间的内部。在所述第二与第三线之间安装一个温度调节装置。
根据另一个优选实施例,提供一个阀门来调节所述第四线的流速。
根据另一个优选实施例,所述温度调节装置有一加热装置。
根据另一个优选实施例,所述温度调节装置有一热交换器,离开所述空间的流体中的至少一部分可以导向该热交换器。
根据另一个优选实施例,所述热交换器用于对返回的流体进行预冷却。
根据另一个优选实施例,所述线装置设计成离开所述热交换器的部分至少一部分能够被返回到所述空间以调节空气。
根据另一个优选实施例,还提供一条线,通过该线能够另外将干燥流体从所述空间的外部直接导入所述空间的内部。
根据另一个优选实施例,所述空间基本上由一容器封上。
附图说明
本发明的具有代表性的实施例在附图中做了举例说明,并在后面的描述中做详细说明。在这些附图中:
图1是根据本发明的调节装置的第一个实施例的示意图;
图2是根据本发明的调节装置的第二个实施例的示意图;
图3是根据本发明的调节装置的第三个实施例的截面示意图;
图4是根据本发明的调节装置的第四个实施例的截面示意图;
图5示出了一种调节装置的截面示意图,该图用来说明作为本发明基础的问题。
在这些附图中,相同的参考符号表示相同的或功能上相同的部件。
具体实施方式
图1是根据本发明的调节装置的第一个实施例的示意图。
已在上面的描述以及图5中做了说明的部件在以下的描述中不再说明以避免重复。
参考符号80’表示一个经过改变的温度控制器,该温度控制器不仅能够通过所述加热装置90来调节所述试样台架10的温度,而且能够通过一条线12同所述露点传感器100联结在一起并因此而能够在有水/结冰凝结危险的时候自动启动补偿性加热。
在根据图1的实施例中,一个加热装置105附加在所述温度调节装置70中,且不与所述热交换器95直接接触。所述线r3并不是在周围的空气中终结,而是被导入到所述加热装置105,以使已离开所述试样台架10的干燥空气被,似乎是被,返回到所述温度控制架2,并且所述干燥空气在已通过所述加热装置105之后,通过所述线r4被导回所述容器5中,在所述容器5中,所述干燥空气通过流出元件40流出而进入所述空间1以调节空气。
参考符号4表示用来感测所述空间1中温度的温度传感器,该传感器向所述温度调节装置70提供一个相应的温度信号TS,该温度调节装置70用来通过所述加热装置105对温度进行调节。
通过这种排列,所述干燥空气可实现双重功能,其明确的第一个功能是冷却所述试样台架10,第二是在通过所述容器5的开口被返回到周围的空气中之前,调节所述空间1的空气,因此干燥空气就能够得到有效的利用。
图2是根据本发明的调节装置的第二个实施例的示意图。
在根据图2的第二个实施例中,一条线r5从恰好位于所述试样台架10前面的线r2分叉并以冷却线圈或冷却管的形式被引导穿过所述试样台架10,然后该线r5离开所述试样台架10,不过,其离开所述试样台架10的点与线r3所离开的点不同,也与通过一个可控制的出口阀45的点不同,该可控制的出口阀45在相应的干燥空气离开所述试样台架10之后将其直接导入所述容器5中。
由于这样会在某些温度非常低的用途中出现问题,所以这种将所述干燥空气通过所述线r5导入所述容器1的选择可以通过出口阀45的方式来进行调节。这种调节可采用习惯的方法进行,例如,可用遥控或线控的方式。
在其它方面,此第二实施例的设计与上述第一实施例中的设计相同。
图3是根据本发明的调节装置的第三个实施例的截面示意图。
参考符号80’也表示一个经过改变的温度控制器,该温度控制器还通过所述控制线ST来控制所述调节装置70的温度并因此而起着中央温度控制系统的作用。
在根据图3的第三个实施例中,通过线r3而被返回的干燥空气的一部分在所述加热装置105前通过线i3被分流并被引导而穿过所述热交换器95,所述干燥空气在所述热交换器95处也以与通过线r0和i1而被导入的新鲜的干燥空气一样的方式进行冷却。所述干燥空气通过所述线i4离开所述热交换器95,并紧接在所述加热装置105之后与已经流过所述加热装置105的空气汇合。该干燥空气在相应的汇合点通过所述线r4和所述流出元件40以与所述第一个实施例中的方式恰好相同的方式被导入所述容器5中以调节空气。
这个实施例还提供一种可控混合阀45和一种旁路线r10,通过该可控混合阀45和旁路线r10,所述热交换器就能够通过旁路。
这个实施例特别的优点是从所述试样台架10流回的干燥空气的“余冷”能够被用来冷却所述热交换器并在加热后的同时能够被返回到所述容器5之中。
在其它方面,此第二实施例的设计与上述第一实施例中的设计相同。
图4是根据本发明的调节装置的第四个实施例的截面示意图。
图4中的参考符号85表示一个附加的空气温度控制器,干燥空气,例如,从与所述热交换器95相同的气体来源通过线r0和i2被加入该空气温度控制器,所述空气的温度由该空气温度控制器提前设定,然后该空气通过所述线r1和流出元件30被导入所述容器5的内部。
经过所述试样台架10的通流速度完全足够来调节所述容器内的空气。
虽然已在前面通过参考具有代表性的优选实施例对本发明进行了描述,但本发明并不仅限于这些实施例,而是能够以不同的方式对其进行修改。
特别地,应能够注意到所述具有代表性的实施例当然能够相互结合。也能够提供分别用于气流的、能够手动或电动控制的附加线路连接和调节阀。
此外,返回气体的余冷不仅能够用来冷却所述热交换器95,而且在其被返回到所述容器5之前,也能够用来冷却任何其它希望冷却的组件或热交换器。
本发明也并不仅限于气态干燥空气,原则上它可以用于任何其它流体。
而且,所述里面装有所述半导体晶片和/或混合电路的装置并不限于试样台架或卡盘,它可以按照需要进行变化,如紧固装置或类似的装置。
Claims (19)
1.调节半导体晶片和/或混合电路的方法,具有以下步骤:
准备一个空间(1),该空间(1)至少部分被封上并且有一个里面装有半导体晶片和/或混合电路的装置(10),所述里面装有半导体晶片和/或混合电路的装置(10)在所述空间(1)内并用于放置半导体晶片和/或混合电路;
引导干燥流体通过所述里面装有半导体晶片和/或混合电路的装置(10)以对所述里面装有半导体晶片和/或混合电路的装置(10)进行加热处理;
其特征在于:离开所述里面装有半导体晶片和/或混合电路的装置(10)的流体的至少一部分用于调节所述空间(1)内的空气。
2.如权利要求1所述的方法,其特征在于:所述空间(1)基本上由一容器(5)封上。
3.如权利要求1或2所述的方法,其特征在于:所述流体部分首先被进行加热处理,然后被允许从所述空间(1)内流出。
4.如权利要求1或2所述的方法,其特征在于:所述流体部分被在所述空间(1)的外面进行加热处理,然后被返回到所述空间(1)。
5.如权利要求1所述的方法,其特征在于:所述流体部分在离开所述里面装有半导体晶片和/或混合电路的装置(10)之后就立即被允许从所述空间(1)内流出。
6.如权利要求1所述的方法,其特征在于:离开所述试样台架(10)的流体的部分首先被进行加热处理,然后被允许从所述空间(1)内流出,且另一部分在离开所述里面装有半导体晶片和/或混合电路的装置(10)之后就立即被允许从所述空间(1)内流出。
7.如权利要求3所述的方法,其特征在于:所述流体部分在其用于预冷却时会被进行加热处理,特别是用于在所述部分被允许从所述空间(1)流出之前在所述空间(1)外面对流体进行冷却时。
8.调节半导体晶片和/或混合电路的装置,具有:
一个空间(1),该空间(1)至少部分被封上并且有一个里面装有半导体晶片和/或混合电路的装置(10),所述里面装有半导体晶片和/或混合电路的装置(10)在所述空间内并用于放置半导体晶片和/或混合电路;
一个线装置(r2、r3、r4、r5、i3和i4),该线装置用于引导干燥流体穿过所述里面装有半导体晶片和/或混合电路的装置(10)来对所述里面装有半导体晶片和/或混合电路的装置(10)进行加热处理,并且将离开所述里面装有半导体晶片和/或混合电路的装置(10)的流体的至少一部分导入所述空间(1)内用来调节所述空间(1)内的空气。
9.如权利要求8所述的装置,其特征在于:所述线装置(r2、r3、r4、r5、i3和i4)具有:
一个第一线(r2),通过该第一线能够将所述流体从所述空间(1)的外部导入所述的里面装有所述半导体晶片和/或混合电路的装置(10)中;
一个第二线(r3),通过该第二线能够将所述流体从所述的里面装有所述半导体晶片和/或混合电路的装置(10)导向所述空间(1)的外部;
一个第三线(r4),通过该第三线能够将所述流体从所述空间(1)的外部返回到所述空间(1)内;
其特征在于:在所述第二线(r3)与第三线(r4)之间提供一个温度调节装置(70)。
10.如权利要求9所述的装置,其特征在于:在所述第三线(r4)的末端安装流出元件(40)。
11.如权利要求8所述的装置,其特征在于:所述线装置(r2、r3、r4、r5、i3和i4)具有:
一个第一线(r2),通过该第一线能够将所述流体从所述空间(1)的外部导入所述的里面装有所述半导体晶片和/或混合电路的装置(10)中;
一个第四线(r5),通过该第四线能够将所述流体从所述的里面装有所述半导体晶片和/或混合电路的装置(10)导向所述空间(1)的内部。
12.如权利要求11所述的装置,其特征在于:所述线装置(r2、r3、r4、r5、i3和i4)具有:
一个第二线(r3),通过该第二线能够将所述流体从所述的里面装有所述半导体晶片和/或混合电路的装置(10)的外部导向所述空间(1)的外部;
一个第三线(r4),通过该第三线能够将所述流体从所述空间(1)的外部返回到所述空间(1)内;
其特征在于:在所述第二线(r3)与第三线(r4)之间提供一个温度调节装置(70)。
13.如权利要求11或12所述的装置,其特征在于:提供一种阀门(45)来调节所述第四线(r5)的流速。
14.如权利要求9到12中任意一项的一个所述的装置,其特征在于:所述温度调节装置(70)有一个加热装置(105)。
15.如权利要求9~12中任意一项中的一个所述的装置,其特征在于:所述温度调节装置(70)有一个热交换器(95),离开所述空间(1)的流体的至少一部分能够被导向该热交换器(95)。
16.如权利要求15所述的装置,其特征在于:所述热交换器(95)用于对返回来的流体进行预冷却。
17.如权利要求12所述的装置,其特征在于:所述线装置(r2、r3、r4、r5、i3和i4)设计成离开所述热交换器(95)的流体的至少一部分能够被返回到所述空间(1)以调节空气。
18.如权利要求8~12、17中任意一项所述的装置,其特征在于:还提供一条线(r1),干燥空气能够通过该线(r1)从所述空间(1)的外部被直接导入所述空间(1)内。
19.如权利要求8~12、17中任意一项所述的装置,其特征在于:所述空间(1)基本上由一容器(5)所封上。
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- 2003-04-15 PL PL371238A patent/PL211045B1/pl unknown
- 2003-04-15 RU RU2004130436/28A patent/RU2284609C2/ru active
- 2003-04-15 ES ES03720475T patent/ES2274225T7/es active Active
- 2003-04-15 DE DE50305265T patent/DE50305265D1/de not_active Expired - Lifetime
- 2003-04-15 DK DK03720475.7T patent/DK1495486T5/da active
- 2003-04-15 KR KR1020047016355A patent/KR100625631B1/ko active IP Right Grant
- 2003-04-15 PT PT03720475T patent/PT1495486E/pt unknown
- 2003-04-15 CA CA2481260A patent/CA2481260C/en not_active Expired - Fee Related
- 2003-04-15 AU AU2003224079A patent/AU2003224079A1/en not_active Abandoned
- 2003-04-15 CN CNB038084384A patent/CN100378903C/zh not_active Expired - Lifetime
- 2003-04-15 US US10/511,335 patent/US7900373B2/en active Active
- 2003-04-15 AT AT03720475T patent/ATE341831T1/de active
- 2003-04-15 JP JP2003585158A patent/JP4070724B2/ja not_active Expired - Lifetime
- 2003-04-15 EP EP03720475A patent/EP1495486B3/de not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
KR20040111509A (ko) | 2004-12-31 |
PT1495486E (pt) | 2007-01-31 |
US7900373B2 (en) | 2011-03-08 |
ES2274225T7 (es) | 2010-03-31 |
WO2003088323A1 (de) | 2003-10-23 |
PL211045B1 (pl) | 2012-04-30 |
KR100625631B1 (ko) | 2006-09-20 |
RU2004130436A (ru) | 2005-07-10 |
ATE341831T1 (de) | 2006-10-15 |
NO336896B1 (no) | 2015-11-23 |
AU2003224079A1 (en) | 2003-10-27 |
CA2481260A1 (en) | 2003-10-23 |
US20050227503A1 (en) | 2005-10-13 |
CA2481260C (en) | 2010-10-12 |
JP2005528781A (ja) | 2005-09-22 |
DE10216786A1 (de) | 2003-11-06 |
DE10216786B4 (de) | 2004-07-15 |
EP1495486B1 (de) | 2006-10-04 |
DE10216786C5 (de) | 2009-10-15 |
DK1495486T3 (da) | 2007-02-05 |
CN1647246A (zh) | 2005-07-27 |
RU2284609C2 (ru) | 2006-09-27 |
DK1495486T5 (da) | 2010-03-08 |
EP1495486A1 (de) | 2005-01-12 |
NO20044607L (no) | 2004-10-26 |
PL371238A1 (en) | 2005-06-13 |
EP1495486B3 (de) | 2009-10-21 |
ES2274225T3 (es) | 2007-05-16 |
JP4070724B2 (ja) | 2008-04-02 |
DE50305265D1 (de) | 2006-11-16 |
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