JP4049172B2 - ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ - Google Patents
ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ Download PDFInfo
- Publication number
- JP4049172B2 JP4049172B2 JP2005203749A JP2005203749A JP4049172B2 JP 4049172 B2 JP4049172 B2 JP 4049172B2 JP 2005203749 A JP2005203749 A JP 2005203749A JP 2005203749 A JP2005203749 A JP 2005203749A JP 4049172 B2 JP4049172 B2 JP 4049172B2
- Authority
- JP
- Japan
- Prior art keywords
- chuck top
- support
- wafer
- preferable
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000001816 cooling Methods 0.000 claims description 108
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 14
- 239000002826 coolant Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 126
- 239000010410 layer Substances 0.000 description 81
- 238000010438 heat treatment Methods 0.000 description 57
- 229910052751 metal Inorganic materials 0.000 description 49
- 239000002184 metal Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 38
- 239000000463 material Substances 0.000 description 33
- 239000004020 conductor Substances 0.000 description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- 239000011347 resin Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 21
- 239000000523 sample Substances 0.000 description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 19
- 239000002131 composite material Substances 0.000 description 16
- 230000003746 surface roughness Effects 0.000 description 15
- 239000011888 foil Substances 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 238000009413 insulation Methods 0.000 description 10
- 238000007747 plating Methods 0.000 description 10
- 239000010935 stainless steel Substances 0.000 description 10
- 229910001220 stainless steel Inorganic materials 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 9
- 229910052863 mullite Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005219 brazing Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000007751 thermal spraying Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000010445 mica Substances 0.000 description 3
- 229910052618 mica group Inorganic materials 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
- G01R31/2877—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to cooling
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2865—Holding devices, e.g. chucks; Handlers or transport devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
2 チャックトップ
3 チャックトップ導体層
4 支持体
5 空隙
6 加熱体
7 支持棒
9 昇降手段
21 環状溝
22 放射状溝
23 柱状体
30 冷却機構
40 板状体
61 抵抗発熱体
62 絶縁体
Claims (5)
- 半導体を検査するためのウェハプローバ用ウェハ保持体であって、前記保持体は少なくともチャックトップと、該チャックトップを支持する支持体とからなり、前記チャックトップには冷媒を流すための流路が形成されておらず、前記チャックトップと支持体の間に形成される空隙部に、チャックトップ及び/または支持体を冷却する流体が流れる流路を有する冷却機構を具備し、前記支持体は前記冷却機構を介さずに前記チャックトップを支持し、前記冷却機構の流路のチャックトップ側及び/または前記冷却機構の流路の支持体底部側に板状体を備えていることを特徴とするウェハプローバ用ウェハ保持体。
- 前記冷却機構は、チャックトップと支持体の間に形成された空隙部の底部に設置されていることを特徴とする、請求項1に記載のウェハプローバ用ウェハ保持体。
- 前記冷却機構は、チャックトップと支持体の間に形成された空隙部の少なくともチャックトップ近傍に設置されていることを特徴とする、請求項1に記載のウェハプローバ用ウェハ保持体。
- 前記冷却機構は、チャックトップに対して当接または離間可能な可動式であることを特徴とする、請求項1乃至3のいずれかに記載のウェハプローバ用ウェハ保持体。
- 請求項1乃至4のいずれかに記載したウェハプローバ用ウェハ保持体を備えることを特徴とするウェハプローバ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005203749A JP4049172B2 (ja) | 2005-07-13 | 2005-07-13 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
US11/485,624 US7425838B2 (en) | 2005-07-13 | 2006-07-13 | Body for keeping a wafer and wafer prober using the same |
TW095125668A TW200711023A (en) | 2005-07-13 | 2006-07-13 | Body for keeping a wafer and wafer prober using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005203749A JP4049172B2 (ja) | 2005-07-13 | 2005-07-13 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007131408A Division JP2007235171A (ja) | 2007-05-17 | 2007-05-17 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007027218A JP2007027218A (ja) | 2007-02-01 |
JP4049172B2 true JP4049172B2 (ja) | 2008-02-20 |
Family
ID=37693631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005203749A Active JP4049172B2 (ja) | 2005-07-13 | 2005-07-13 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7425838B2 (ja) |
JP (1) | JP4049172B2 (ja) |
TW (1) | TW200711023A (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10216786C5 (de) * | 2002-04-15 | 2009-10-15 | Ers Electronic Gmbh | Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden |
JP2007227442A (ja) * | 2006-02-21 | 2007-09-06 | Sumitomo Electric Ind Ltd | ウェハ保持体およびそれを搭載したウェハプローバ |
JP4950688B2 (ja) * | 2006-03-13 | 2012-06-13 | 東京エレクトロン株式会社 | 載置装置 |
CN101563230B (zh) * | 2006-12-26 | 2014-05-28 | 富士胶卷迪马蒂克斯股份有限公司 | 具有导电元件的打印系统 |
JP2009135261A (ja) * | 2007-11-30 | 2009-06-18 | Espec Corp | 試験装置 |
EP2182619B1 (en) * | 2008-10-28 | 2012-10-03 | Siemens Aktiengesellschaft | Arrangement for cooling of an electrical machine |
DE102009045291A1 (de) * | 2009-10-02 | 2011-04-07 | Ers Electronic Gmbh | Vorrichtung zur Konditionierung von Halbleiterchips und Testverfahren unter Verwendung der Vorrichtung |
US8704542B2 (en) * | 2011-07-08 | 2014-04-22 | Titan Semiconductor Tool, LLC | Thermal chamber for IC chip testing |
JP6209376B2 (ja) * | 2013-07-08 | 2017-10-04 | 株式会社日本マイクロニクス | 電気的接続装置 |
JP5905050B2 (ja) * | 2014-05-16 | 2016-04-20 | 三菱電機株式会社 | 回転電機 |
JP5792364B1 (ja) * | 2014-07-31 | 2015-10-07 | 株式会社日立国際電気 | 基板処理装置、チャンバリッドアセンブリ、半導体装置の製造方法、プログラム及び記録媒体 |
WO2017030873A1 (en) | 2015-08-14 | 2017-02-23 | M Cubed Technologies, Inc. | Wafer chuck featuring reduced friction support surface |
JP7353150B2 (ja) * | 2019-11-27 | 2023-09-29 | 東京エレクトロン株式会社 | 載置台、及び、検査装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2631165B1 (fr) * | 1988-05-05 | 1992-02-21 | Moulene Daniel | Support conditionneur de temperature pour petits objets tels que des composants semi-conducteurs et procede de regulation thermique utilisant ce support |
US6328096B1 (en) * | 1997-12-31 | 2001-12-11 | Temptronic Corporation | Workpiece chuck |
US6340895B1 (en) * | 1999-07-14 | 2002-01-22 | Aehr Test Systems, Inc. | Wafer-level burn-in and test cartridge |
JP2001033484A (ja) | 1999-07-15 | 2001-02-09 | Ibiden Co Ltd | ウエハプローバ |
JP2002064133A (ja) * | 2000-03-30 | 2002-02-28 | Ibiden Co Ltd | 支持容器および半導体製造・検査装置 |
JP2002083667A (ja) * | 2000-07-06 | 2002-03-22 | Ibiden Co Ltd | セラミックヒータ |
US6771086B2 (en) * | 2002-02-19 | 2004-08-03 | Lucas/Signatone Corporation | Semiconductor wafer electrical testing with a mobile chiller plate for rapid and precise test temperature control |
DE10246282B4 (de) * | 2002-10-02 | 2005-12-29 | Suss Microtec Test Systems Gmbh | Prober zum Testen von Substraten bei tiefen Temperaturen |
JP2005064313A (ja) * | 2003-08-18 | 2005-03-10 | Seiko Epson Corp | プローブカード、プローブ装置及び半導体装置の製造方法 |
-
2005
- 2005-07-13 JP JP2005203749A patent/JP4049172B2/ja active Active
-
2006
- 2006-07-13 TW TW095125668A patent/TW200711023A/zh unknown
- 2006-07-13 US US11/485,624 patent/US7425838B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070024299A1 (en) | 2007-02-01 |
TW200711023A (en) | 2007-03-16 |
JP2007027218A (ja) | 2007-02-01 |
US7425838B2 (en) | 2008-09-16 |
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