JP5500421B2 - ウェハ保持体およびそれを搭載したウェハプローバ - Google Patents
ウェハ保持体およびそれを搭載したウェハプローバ Download PDFInfo
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- JP5500421B2 JP5500421B2 JP2009282552A JP2009282552A JP5500421B2 JP 5500421 B2 JP5500421 B2 JP 5500421B2 JP 2009282552 A JP2009282552 A JP 2009282552A JP 2009282552 A JP2009282552 A JP 2009282552A JP 5500421 B2 JP5500421 B2 JP 5500421B2
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- chuck top
- wafer
- bottom plate
- support
- temperature
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 26
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052863 mullite Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052878 cordierite Inorganic materials 0.000 claims description 3
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- -1 steatite Chemical compound 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 52
- 239000002184 metal Substances 0.000 description 52
- 238000010438 heat treatment Methods 0.000 description 44
- 239000010410 layer Substances 0.000 description 36
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- 239000004020 conductor Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 19
- 239000000523 sample Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 238000009826 distribution Methods 0.000 description 17
- 239000011888 foil Substances 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 14
- 238000005259 measurement Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 230000003746 surface roughness Effects 0.000 description 11
- 238000007747 plating Methods 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000010935 stainless steel Substances 0.000 description 9
- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 230000002265 prevention Effects 0.000 description 7
- 238000002791 soaking Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 238000007751 thermal spraying Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000010445 mica Substances 0.000 description 4
- 229910052618 mica group Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
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- 229910001120 nichrome Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000002528 anti-freeze Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
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- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
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- 238000009833 condensation Methods 0.000 description 1
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- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
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- 230000009257 reactivity Effects 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
10 チャックトップ
20 温度制御手段
30 反り防止板
40 支持体
50 底板
60 空隙
70 締結手段
Claims (5)
- ウェハ載置面を有するチャックトップと、該チャックトップのウェハ載置面の反対側に設置される温度制御手段と、前記チャックトップ及び/又は温度制御手段を支持する支持体と、該支持体の下部に設置された底板とを有し、該底板の熱膨張係数が、前記チャックトップの熱膨張係数以上であり、前記チャックトップ、支持体、底板の熱伝導率をそれぞれK1、K2、K3としたとき、K1>K2かつK3>K2であり、前記底板の熱伝導率(K3)が60W/mK以上であることを特徴とするウェハ保持体。
- 前記チャックトップが窒化アルミニウム、炭化ケイ素、シリコンと炭化ケイ素の複合体、アルミニウムと炭化ケイ素の複合体、アルミニウムとシリコンと炭化ケイ素の複合体のいずれかであることを特徴とする請求項1に記載のウェハ保持体。
- 前記支持体が、アルミナ、ムライトアルミナ、ムライト、コージライト、ステアタイト、窒化ケイ素のいずれかであることを特徴とする請求項1に記載のウェハ保持体。
- 前記底板が、窒化アルミニウム、炭化ケイ素、シリコンと炭化ケイ素の複合体、アルミニウムと炭化ケイ素の複合体、アルミニウムとシリコンと炭化ケイ素の複合体のいずれかであることを特徴とする請求項1に記載のウェハ保持体。
- 請求項1〜4のいずれか1項に記載のウェハ保持体が搭載されていることを特徴とするウェハプローバ。
Priority Applications (1)
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JP2009282552A JP5500421B2 (ja) | 2009-12-14 | 2009-12-14 | ウェハ保持体およびそれを搭載したウェハプローバ |
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JP2009282552A JP5500421B2 (ja) | 2009-12-14 | 2009-12-14 | ウェハ保持体およびそれを搭載したウェハプローバ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011124466A JP2011124466A (ja) | 2011-06-23 |
JP5500421B2 true JP5500421B2 (ja) | 2014-05-21 |
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JP2009282552A Active JP5500421B2 (ja) | 2009-12-14 | 2009-12-14 | ウェハ保持体およびそれを搭載したウェハプローバ |
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JP (1) | JP5500421B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6379954B2 (ja) * | 2014-10-03 | 2018-08-29 | 住友電気工業株式会社 | ウエハ加熱ヒータ |
KR102294884B1 (ko) * | 2019-06-27 | 2021-08-27 | 세메스 주식회사 | 반도체 소자의 검사 장치 및 반도체 소자의 검사 방법 |
JP7353150B2 (ja) * | 2019-11-27 | 2023-09-29 | 東京エレクトロン株式会社 | 載置台、及び、検査装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3945527B2 (ja) * | 2004-11-30 | 2007-07-18 | 住友電気工業株式会社 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
JP4646715B2 (ja) * | 2005-07-11 | 2011-03-09 | 住友電気工業株式会社 | ウェハプローバ用ウェハ保持体およびそれを搭載したウェハプローバ |
JP2007035737A (ja) * | 2005-07-25 | 2007-02-08 | Sumitomo Electric Ind Ltd | ウェハ保持体及びウェハ保持体を備えたウェハプローバ |
JP4950688B2 (ja) * | 2006-03-13 | 2012-06-13 | 東京エレクトロン株式会社 | 載置装置 |
JP5067050B2 (ja) * | 2007-07-13 | 2012-11-07 | 住友電気工業株式会社 | ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ |
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- 2009-12-14 JP JP2009282552A patent/JP5500421B2/ja active Active
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