CN100364056C - 半导体集成电路器件的制造方法 - Google Patents
半导体集成电路器件的制造方法 Download PDFInfo
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- CN100364056C CN100364056C CNB2004100008014A CN200410000801A CN100364056C CN 100364056 C CN100364056 C CN 100364056C CN B2004100008014 A CNB2004100008014 A CN B2004100008014A CN 200410000801 A CN200410000801 A CN 200410000801A CN 100364056 C CN100364056 C CN 100364056C
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP5078197 | 1997-03-05 | ||
JP050781/1997 | 1997-03-05 |
Related Parent Applications (1)
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CNB031233074A Division CN1327489C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
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CN1521810A CN1521810A (zh) | 2004-08-18 |
CN100364056C true CN100364056C (zh) | 2008-01-23 |
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CNA2004100006004A Pending CN1508861A (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNB2004100005995A Expired - Lifetime CN1290163C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CN98803082A Expired - Lifetime CN1115720C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNB2004100008029A Expired - Lifetime CN1317744C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNB2004100008014A Expired - Lifetime CN100364056C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNB2004100008048A Expired - Lifetime CN100533705C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNB031233074A Expired - Lifetime CN1327489C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNA2004100008033A Pending CN1521812A (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
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CNA2004100006004A Pending CN1508861A (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNB2004100005995A Expired - Lifetime CN1290163C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CN98803082A Expired - Lifetime CN1115720C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNB2004100008029A Expired - Lifetime CN1317744C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
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CNB2004100008048A Expired - Lifetime CN100533705C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNB031233074A Expired - Lifetime CN1327489C (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
CNA2004100008033A Pending CN1521812A (zh) | 1997-03-05 | 1998-03-04 | 半导体集成电路器件的制造方法 |
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US (14) | US6239041B1 (zh) |
EP (1) | EP0973191A4 (zh) |
KR (5) | KR100544260B1 (zh) |
CN (8) | CN1508861A (zh) |
TW (11) | TWI278933B (zh) |
WO (1) | WO1998039802A1 (zh) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI278933B (en) * | 1997-03-05 | 2007-04-11 | Hitachi Ltd | Method of making semiconductor IC device |
JPH10335652A (ja) * | 1997-05-30 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH10340909A (ja) | 1997-06-06 | 1998-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US7923383B2 (en) * | 1998-05-21 | 2011-04-12 | Tokyo Electron Limited | Method and apparatus for treating a semi-conductor substrate |
JP2001305368A (ja) * | 2000-04-21 | 2001-10-31 | Shin Etsu Chem Co Ltd | 光導波路基板の製造方法 |
JP2002208592A (ja) * | 2001-01-09 | 2002-07-26 | Sharp Corp | 絶縁膜の形成方法、半導体装置、製造装置 |
US6554002B2 (en) * | 2001-02-21 | 2003-04-29 | United Microelectronics Corp. | Method for removing etching residues |
US7049187B2 (en) | 2001-03-12 | 2006-05-23 | Renesas Technology Corp. | Manufacturing method of polymetal gate electrode |
JPWO2002073697A1 (ja) | 2001-03-12 | 2004-07-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
US20020197823A1 (en) * | 2001-05-18 | 2002-12-26 | Yoo Jae-Yoon | Isolation method for semiconductor device |
JP2003017595A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 半導体装置 |
US20090004850A1 (en) * | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US7517751B2 (en) * | 2001-12-18 | 2009-04-14 | Tokyo Electron Limited | Substrate treating method |
US6764907B2 (en) * | 2002-02-19 | 2004-07-20 | Bart J. Van Zeghbroeck | Method of fabricating self-aligned silicon carbide semiconductor devices |
US7151048B1 (en) | 2002-03-14 | 2006-12-19 | Cypress Semiconductor Corporation | Poly/silicide stack and method of forming the same |
US20030232501A1 (en) | 2002-06-14 | 2003-12-18 | Kher Shreyas S. | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials |
US6887736B2 (en) * | 2002-06-24 | 2005-05-03 | Cermet, Inc. | Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
JP3699956B2 (ja) * | 2002-11-29 | 2005-09-28 | 株式会社東芝 | 半導体装置の製造方法 |
US7189652B1 (en) * | 2002-12-06 | 2007-03-13 | Cypress Semiconductor Corporation | Selective oxidation of gate stack |
US6844082B2 (en) * | 2003-04-28 | 2005-01-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas distribution plate with anodized alumnium coating |
JP3965167B2 (ja) | 2003-07-04 | 2007-08-29 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
US7371637B2 (en) * | 2003-09-26 | 2008-05-13 | Cypress Semiconductor Corporation | Oxide-nitride stack gate dielectric |
US20050106895A1 (en) * | 2003-11-17 | 2005-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Supercritical water application for oxide formation |
US7247534B2 (en) | 2003-11-19 | 2007-07-24 | International Business Machines Corporation | Silicon device on Si:C-OI and SGOI and method of manufacture |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US20050284572A1 (en) * | 2004-06-29 | 2005-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Heating system for load-lock chamber |
US20070111372A1 (en) * | 2004-07-20 | 2007-05-17 | Cermet, Inc. | Methods of forming a p-type group ii-vi semiconductor crystal layer on a substrate |
US7303092B2 (en) * | 2004-12-28 | 2007-12-04 | Kimberly-Clark Worldwide, Inc. | Wet wipe package |
US20060266793A1 (en) * | 2005-05-24 | 2006-11-30 | Caterpillar Inc. | Purging system having workpiece movement device |
KR100648194B1 (ko) * | 2005-07-27 | 2006-11-23 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US7723154B1 (en) | 2005-10-19 | 2010-05-25 | North Carolina State University | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
WO2007123578A2 (en) * | 2005-12-16 | 2007-11-01 | 21St Century Structures, Llc | Inorganic composite building panel |
CN101346320A (zh) * | 2005-12-16 | 2009-01-14 | 21世纪结构有限责任公司 | 无机复合材料和制造方法 |
DE102005061563A1 (de) * | 2005-12-22 | 2007-07-19 | Applied Materials Gmbh & Co. Kg | Anlage zur Behandlung von Substraten und Verfahren |
EP1801843B1 (de) * | 2005-12-22 | 2013-07-03 | Applied Materials GmbH & Co. KG | Anlage und Verfahren zur Behandlung von Substraten |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
JP4620654B2 (ja) * | 2006-12-25 | 2011-01-26 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
US9449831B2 (en) | 2007-05-25 | 2016-09-20 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US20090179253A1 (en) | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8940645B2 (en) | 2007-05-25 | 2015-01-27 | Cypress Semiconductor Corporation | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
US8614124B2 (en) * | 2007-05-25 | 2013-12-24 | Cypress Semiconductor Corporation | SONOS ONO stack scaling |
US9299568B2 (en) | 2007-05-25 | 2016-03-29 | Cypress Semiconductor Corporation | SONOS ONO stack scaling |
US8633537B2 (en) | 2007-05-25 | 2014-01-21 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
US20080299780A1 (en) * | 2007-06-01 | 2008-12-04 | Uv Tech Systems, Inc. | Method and apparatus for laser oxidation and reduction |
US7951728B2 (en) * | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
US9431549B2 (en) | 2007-12-12 | 2016-08-30 | Cypress Semiconductor Corporation | Nonvolatile charge trap memory device having a high dielectric constant blocking region |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
JP2010087475A (ja) * | 2008-09-03 | 2010-04-15 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び製造装置 |
US8491967B2 (en) | 2008-09-08 | 2013-07-23 | Applied Materials, Inc. | In-situ chamber treatment and deposition process |
US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
CN102224570A (zh) * | 2008-11-21 | 2011-10-19 | 国立大学法人长冈技术科学大学 | 基板处理装置 |
KR101258630B1 (ko) * | 2008-11-21 | 2013-04-26 | 고쿠리츠다이가쿠호진 나가오카기쥬츠가가쿠다이가쿠 | 기판 처리 방법 및 기판 처리 장치 |
DE102009003393A1 (de) * | 2009-01-27 | 2010-07-29 | Schott Solar Ag | Verfahren zur Temperaturbehandlung von Halbleiterbauelementen |
US9127340B2 (en) * | 2009-02-13 | 2015-09-08 | Asm International N.V. | Selective oxidation process |
JP5329294B2 (ja) * | 2009-04-30 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5520552B2 (ja) * | 2009-09-11 | 2014-06-11 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
CN102612736A (zh) * | 2009-10-06 | 2012-07-25 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
TWI497854B (zh) * | 2009-10-08 | 2015-08-21 | Truelight Corp | 氧化侷限式面射型雷射製作方法 |
KR20120106786A (ko) * | 2009-12-08 | 2012-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR101945171B1 (ko) | 2009-12-08 | 2019-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8274081B2 (en) | 2010-03-22 | 2012-09-25 | Micron Technology, Inc. | Semiconductor constructions |
US7829376B1 (en) | 2010-04-07 | 2010-11-09 | Lumenz, Inc. | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
WO2012126377A1 (en) | 2011-03-22 | 2012-09-27 | Nantong Fujitsu Microelectronics Co., Ltd. | System-level packaging methods and structures |
US8927363B2 (en) * | 2013-05-17 | 2015-01-06 | International Business Machines Corporation | Integrating channel SiGe into pFET structures |
EA032058B1 (ru) * | 2014-12-17 | 2019-04-30 | Открытое акционерное общество "ИНТЕГРАЛ"-управляющая компания холдинга "ИНТЕГРАЛ" | Способ термического окисления кремниевых пластин |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
WO2019036157A1 (en) * | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER |
CN108031836B (zh) * | 2018-01-22 | 2019-12-03 | 北京大学 | 一种金属-金属氧化物纳米复合材料的制备方法 |
KR102160552B1 (ko) * | 2018-02-28 | 2020-09-28 | 최영준 | 절연막 형성 방법 및 절연막 제조장치 |
CN108447770B (zh) * | 2018-03-08 | 2020-07-28 | 清华大学 | 二氧化硅薄膜的制备方法 |
JP7278111B2 (ja) | 2019-03-08 | 2023-05-19 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
CN111785612B (zh) * | 2020-08-21 | 2022-05-17 | 中电晶华(天津)半导体材料有限公司 | 一种vdmos功率器件用二氧化硅层的制备方法 |
US11972942B2 (en) * | 2021-09-23 | 2024-04-30 | Texas Instruments Incorporated | Gate oxide fabrication and system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06115903A (ja) * | 1992-10-05 | 1994-04-26 | Tadahiro Omi | 水分発生方法 |
JPH06163517A (ja) * | 1992-11-17 | 1994-06-10 | Tadahiro Omi | 低温酸化膜形成装置および低温酸化膜形成方法 |
JPH06333918A (ja) * | 1993-05-25 | 1994-12-02 | Tadahiro Omi | 絶縁酸化膜の形成方法及び半導体装置 |
Family Cites Families (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US24870A (en) * | 1859-07-26 | Improvement in sewing-machines | ||
US42344A (en) * | 1864-04-19 | Oeein h | ||
US9813A (en) * | 1853-06-28 | Refrigerator for cooling liquids | ||
US19419A (en) * | 1858-02-23 | Cttlinaby ladle | ||
US10975A (en) * | 1854-05-30 | Improvement in sewing-machines | ||
US4315A (en) * | 1845-12-16 | Cylindrical type-setting | ||
US6853A (en) * | 1849-11-06 | Improvement in seed-planters | ||
US3857927A (en) | 1972-05-26 | 1974-12-31 | Rockwell International Corp | System and method including a catalyst bed for combining hydrogen and oxygen gases |
US4139658A (en) * | 1976-06-23 | 1979-02-13 | Rca Corp. | Process for manufacturing a radiation hardened oxide |
US4119706A (en) | 1976-10-12 | 1978-10-10 | Engelhard Minerals & Chemicals Corporation | Method of catalytically recombining radiolytic hydrogen and radiolytic oxygen |
US4199706A (en) * | 1977-09-02 | 1980-04-22 | Zenith Radio Corporation | Spring-loaded resistor terminal |
US4139858A (en) | 1977-12-12 | 1979-02-13 | Rca Corporation | Solar cell with a gallium nitride electrode |
JPS553820A (en) | 1978-06-22 | 1980-01-11 | Agency Of Ind Science & Technol | Oxide catalyst for catalytic combustion of hydrogen |
JPS5541805A (en) | 1978-09-18 | 1980-03-24 | Tanaka Kikinzoku Kogyo Kk | Platinum group oxidation catalyst and preparation thereof |
JPS56126650A (en) * | 1980-03-07 | 1981-10-03 | Fuji Heavy Ind Ltd | Air-fuel ratio controlling apparatus |
JPS6234166Y2 (zh) * | 1980-07-28 | 1987-09-01 | ||
JPS5749895A (en) | 1980-09-10 | 1982-03-24 | Hitachi Ltd | Catalyst structure of recombiner |
CA1141522A (en) | 1980-11-03 | 1983-02-22 | Karl T. Chuang | Method of combining gaseous hydrogen and oxygen |
JPS5819599A (ja) | 1981-07-28 | 1983-02-04 | 株式会社東芝 | 放射性気体廃棄物処理系の再結合器用加熱装置 |
US4376796A (en) * | 1981-10-27 | 1983-03-15 | Thermco Products Corporation | Processing silicon wafers employing processing gas atmospheres of similar molecular weight |
JPS59132136A (ja) | 1983-01-19 | 1984-07-30 | Hitachi Ltd | 半導体装置の製造方法 |
JPS60107840A (ja) | 1983-11-16 | 1985-06-13 | Hitachi Ltd | 半導体素子の製造法 |
JPS60247933A (ja) | 1984-05-23 | 1985-12-07 | Oki Electric Ind Co Ltd | 半導体製造装置 |
JPS6124967A (ja) * | 1984-07-13 | 1986-02-03 | 大同酸素株式会社 | 高純度窒素ガス製造装置 |
US4579723A (en) * | 1985-03-28 | 1986-04-01 | The Boc Group, Inc. | Methods for purifying inert gas streams |
JPS62198128A (ja) | 1986-02-26 | 1987-09-01 | Toshiba Corp | シリコン酸化膜形成方法及び装置 |
JPS6385630A (ja) | 1986-09-30 | 1988-04-16 | Fuji Photo Film Co Ltd | ハロゲン化銀カラ−写真感光材料 |
CH674003A5 (zh) * | 1987-03-11 | 1990-04-30 | Bbc Brown Boveri & Cie | |
JPH01319940A (ja) | 1988-06-22 | 1989-12-26 | Kimmon Mfg Co Ltd | 外部燃焼酸化装置 |
JP3122125B2 (ja) * | 1989-05-07 | 2001-01-09 | 忠弘 大見 | 酸化膜の形成方法 |
US5296392A (en) * | 1990-03-06 | 1994-03-22 | Digital Equipment Corporation | Method of forming trench isolated regions with sidewall doping |
US6110531A (en) * | 1991-02-25 | 2000-08-29 | Symetrix Corporation | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition |
JPH0519746A (ja) | 1991-07-12 | 1993-01-29 | Matsushita Electric Ind Co Ltd | 画像位置決定装置 |
US6146135A (en) * | 1991-08-19 | 2000-11-14 | Tadahiro Ohmi | Oxide film forming method |
US5495121A (en) * | 1991-09-30 | 1996-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPH05114740A (ja) | 1991-10-23 | 1993-05-07 | Kawasaki Steel Corp | 半導体装置の製造方法 |
WO1993010556A1 (en) | 1991-11-22 | 1993-05-27 | Tadahiro Ohmi | Apparatus for forming oxide film, heat treatment apparatus, semiconductor device, manufacturing method therefor |
JP3535876B2 (ja) | 1991-11-22 | 2004-06-07 | 財団法人国際科学振興財団 | 半導体装置及びその製造方法 |
JPH05144804A (ja) | 1991-11-22 | 1993-06-11 | Tadahiro Omi | 半導体装置の製造方法 |
JPH05141871A (ja) | 1991-11-22 | 1993-06-08 | Tadahiro Omi | 熱処理装置 |
JP3129338B2 (ja) * | 1991-11-29 | 2001-01-29 | 忠弘 大見 | 酸化膜形成装置 |
US5244843A (en) * | 1991-12-17 | 1993-09-14 | Intel Corporation | Process for forming a thin oxide layer |
JPH06163423A (ja) * | 1992-11-18 | 1994-06-10 | Fujitsu Ltd | 半導体製造装置 |
JPH0710935A (ja) | 1993-06-25 | 1995-01-13 | Kanegafuchi Chem Ind Co Ltd | グラフト共重合体及び該グラフト共重合体を含有してなるポリオレフィン系樹脂組成物 |
JP3081886B2 (ja) * | 1993-06-30 | 2000-08-28 | 東京エレクトロン株式会社 | 成膜方法 |
JPH0811976B2 (ja) | 1993-06-30 | 1996-02-07 | 光精工株式会社 | 円錐摩擦車式変速比連続可変変速機 |
JPH0710935U (ja) * | 1993-07-24 | 1995-02-14 | ヤマハ株式会社 | 縦型熱処理炉 |
JPH0786271A (ja) | 1993-09-17 | 1995-03-31 | Fujitsu Ltd | シリコン酸化膜の作製方法 |
JP3277421B2 (ja) * | 1993-10-19 | 2002-04-22 | ソニー株式会社 | 加熱処理装置および熱処理方法 |
US5777300A (en) * | 1993-11-19 | 1998-07-07 | Tokyo Electron Kabushiki Kaisha | Processing furnace for oxidizing objects |
JPH07155069A (ja) | 1993-12-09 | 1995-06-20 | Kubota Corp | 杭打ち装置 |
JP3256059B2 (ja) | 1993-12-27 | 2002-02-12 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPH07273101A (ja) | 1994-03-31 | 1995-10-20 | Tokyo Electron Ltd | 枚葉式熱処理装置 |
JPH07283210A (ja) | 1994-04-01 | 1995-10-27 | Sony Corp | 絶縁膜形成装置及び絶縁膜形成方法 |
JPH07297181A (ja) | 1994-04-20 | 1995-11-10 | Sony Corp | 熱酸化処理方法及び熱酸化処理装置 |
JPH07297201A (ja) | 1994-04-20 | 1995-11-10 | Sony Corp | 半導体基板の熱処理方法及び熱処理装置 |
JPH07321102A (ja) | 1994-05-26 | 1995-12-08 | Sony Corp | 半導体装置の製造方法 |
US5880041A (en) * | 1994-05-27 | 1999-03-09 | Motorola Inc. | Method for forming a dielectric layer using high pressure |
JPH0851205A (ja) | 1994-08-08 | 1996-02-20 | Ricoh Co Ltd | 半導体装置の製造方法 |
JP3453223B2 (ja) | 1994-08-19 | 2003-10-06 | 東京エレクトロン株式会社 | 処理装置 |
JP3805825B2 (ja) | 1995-09-19 | 2006-08-09 | 株式会社東芝 | 絶縁膜の形成方法 |
US5786263A (en) | 1995-04-04 | 1998-07-28 | Motorola, Inc. | Method for forming a trench isolation structure in an integrated circuit |
JPH0990092A (ja) | 1995-09-20 | 1997-04-04 | Hitachi Ltd | 原子炉格納容器 |
JP2636817B2 (ja) | 1995-10-27 | 1997-07-30 | 株式会社日立製作所 | 枚葉式薄膜形成法および薄膜形成装置 |
JP3423131B2 (ja) | 1995-11-20 | 2003-07-07 | 東京エレクトロン株式会社 | 熱処理装置及び処理装置 |
US5629536A (en) * | 1995-11-21 | 1997-05-13 | Motorola, Inc. | High voltage current limiter and method for making |
JPH09153489A (ja) | 1995-11-30 | 1997-06-10 | Toshiba Corp | 半導体装置の製造方法 |
JP2910647B2 (ja) * | 1995-12-18 | 1999-06-23 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
JPH09172011A (ja) | 1995-12-19 | 1997-06-30 | Hitachi Ltd | 酸化膜形成方法 |
IL125366A (en) * | 1996-01-29 | 2001-12-23 | Fujikin Kk | A method of generating moisture, a reactor for generating moisture, a method for cooling a reactor temperature to generate moisture and a method for creating a platinum-coated stripping layer. |
US5686345A (en) * | 1996-01-30 | 1997-11-11 | International Business Machines Corporation | Trench mask for forming deep trenches in a semiconductor substrate, and method of using same |
JPH11186255A (ja) | 1996-11-29 | 1999-07-09 | Sony Corp | シリコン酸化膜の形成方法 |
US5874760A (en) * | 1997-01-22 | 1999-02-23 | International Business Machines Corporation | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation |
TWI278933B (en) | 1997-03-05 | 2007-04-11 | Hitachi Ltd | Method of making semiconductor IC device |
JP3644790B2 (ja) | 1997-04-28 | 2005-05-11 | 忠弘 大見 | 水分発生用反応炉 |
JP3393031B2 (ja) | 1997-03-26 | 2003-04-07 | 忠弘 大見 | 水分発生用反応炉 |
JPH10284484A (ja) | 1997-04-04 | 1998-10-23 | Sony Corp | シリコン酸化膜の形成方法 |
US5851892A (en) * | 1997-05-07 | 1998-12-22 | Cypress Semiconductor Corp. | Fabrication sequence employing an oxide formed with minimized inducted charge and/or maximized breakdown voltage |
JPH10335652A (ja) | 1997-05-30 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH10340909A (ja) | 1997-06-06 | 1998-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP3808975B2 (ja) * | 1997-06-17 | 2006-08-16 | 忠弘 大見 | 半導体製造用水分の発生方法 |
US5861347A (en) * | 1997-07-03 | 1999-01-19 | Motorola Inc. | Method for forming a high voltage gate dielectric for use in integrated circuit |
US6037273A (en) | 1997-07-11 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for insitu vapor generation |
JP3757566B2 (ja) | 1997-08-21 | 2006-03-22 | ソニー株式会社 | シリコン酸化膜の形成方法及び酸化膜成膜装置 |
JPH1174264A (ja) | 1997-08-29 | 1999-03-16 | Sony Corp | シリコン酸化膜の形成方法 |
US5935650A (en) * | 1997-10-17 | 1999-08-10 | Lerch; Wilfried | Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system |
JPH11135492A (ja) | 1997-11-04 | 1999-05-21 | Sony Corp | シリコン酸化膜の形成方法及びシリコン酸化膜形成装置 |
US6118167A (en) * | 1997-11-13 | 2000-09-12 | National Semiconductor Corporation | Polysilicon coated nitride-lined shallow trench |
JPH11162970A (ja) | 1997-11-25 | 1999-06-18 | Sony Corp | 酸化膜の形成方法 |
JP3588994B2 (ja) | 1997-11-27 | 2004-11-17 | ソニー株式会社 | 酸化膜の形成方法及びp形半導体素子の製造方法 |
JP3644810B2 (ja) | 1997-12-10 | 2005-05-11 | 株式会社フジキン | 少流量の水分供給方法 |
JPH11186248A (ja) | 1997-12-22 | 1999-07-09 | Sony Corp | シリコン酸化膜の形成方法及びシリコン酸化膜形成装置 |
JP3563950B2 (ja) | 1998-01-06 | 2004-09-08 | 株式会社ルネサステクノロジ | 水素含有排ガス処理装置 |
JPH11204517A (ja) | 1998-01-12 | 1999-07-30 | Sony Corp | シリコン酸化膜の形成方法、及びシリコン酸化膜形成装置 |
JPH11233508A (ja) | 1998-02-13 | 1999-08-27 | Sony Corp | 絶縁膜の形成方法 |
US6291868B1 (en) | 1998-02-26 | 2001-09-18 | Micron Technology, Inc. | Forming a conductive structure in a semiconductor device |
US6277765B1 (en) * | 1999-08-17 | 2001-08-21 | Intel Corporation | Low-K Dielectric layer and method of making same |
SE516755C2 (sv) * | 1999-12-16 | 2002-02-26 | Inmotion Technologies Ab | Drivenhet för elektriska motorer innefattande ett kretskort med kraftdistributionsstavar. |
US6579889B2 (en) * | 2000-06-22 | 2003-06-17 | Merck & Co., Inc. | Substituted isonipecotyl derivatives as inhibitors of cell adhesion |
-
1998
- 1998-02-27 TW TW095107658A patent/TWI278933B/zh not_active IP Right Cessation
- 1998-02-27 TW TW089119829A patent/TW471068B/zh not_active IP Right Cessation
- 1998-02-27 TW TW094103535A patent/TWI278932B/zh not_active IP Right Cessation
- 1998-02-27 TW TW091102373A patent/TWI233164B/zh not_active IP Right Cessation
- 1998-02-27 TW TW090114047A patent/TW577129B/zh not_active IP Right Cessation
- 1998-02-27 TW TW096101926A patent/TW200746302A/zh not_active IP Right Cessation
- 1998-02-27 TW TW091102374A patent/TWI227530B/zh not_active IP Right Cessation
- 1998-02-27 TW TW087102898A patent/TW462093B/zh not_active IP Right Cessation
- 1998-02-27 TW TW093110289A patent/TWI250583B/zh not_active IP Right Cessation
- 1998-02-27 TW TW091102375A patent/TWI227531B/zh not_active IP Right Cessation
- 1998-02-27 TW TW090114046A patent/TW577128B/zh not_active IP Right Cessation
- 1998-03-04 CN CNA2004100006004A patent/CN1508861A/zh active Pending
- 1998-03-04 WO PCT/JP1998/000892 patent/WO1998039802A1/ja active IP Right Grant
- 1998-03-04 KR KR1020057019434A patent/KR100544260B1/ko not_active IP Right Cessation
- 1998-03-04 CN CNB2004100005995A patent/CN1290163C/zh not_active Expired - Lifetime
- 1998-03-04 KR KR1020057019433A patent/KR100544259B1/ko not_active IP Right Cessation
- 1998-03-04 US US09/380,646 patent/US6239041B1/en not_active Expired - Lifetime
- 1998-03-04 CN CN98803082A patent/CN1115720C/zh not_active Expired - Lifetime
- 1998-03-04 EP EP98905758A patent/EP0973191A4/en not_active Ceased
- 1998-03-04 CN CNB2004100008029A patent/CN1317744C/zh not_active Expired - Lifetime
- 1998-03-04 CN CNB2004100008014A patent/CN100364056C/zh not_active Expired - Lifetime
- 1998-03-04 CN CNB2004100008048A patent/CN100533705C/zh not_active Expired - Lifetime
- 1998-03-04 CN CNB031233074A patent/CN1327489C/zh not_active Expired - Lifetime
- 1998-03-04 CN CNA2004100008033A patent/CN1521812A/zh active Pending
- 1998-03-04 KR KR1020057019431A patent/KR100544257B1/ko not_active IP Right Cessation
- 1998-03-04 KR KR1019997008059A patent/KR100551650B1/ko not_active IP Right Cessation
- 1998-03-04 KR KR1020057019432A patent/KR100544258B1/ko not_active IP Right Cessation
-
2000
- 2000-01-31 US US09/494,036 patent/US6518201B1/en not_active Expired - Lifetime
-
2001
- 2001-01-03 US US09/752,737 patent/US6518202B2/en not_active Expired - Lifetime
- 2001-01-03 US US09/752,766 patent/US6528431B2/en not_active Expired - Lifetime
- 2001-01-03 US US09/752,736 patent/US6417114B2/en not_active Expired - Lifetime
- 2001-08-28 US US09/939,621 patent/US6569780B2/en not_active Expired - Lifetime
- 2001-08-28 US US09/939,600 patent/US6596650B2/en not_active Expired - Lifetime
-
2003
- 2003-04-28 US US10/424,105 patent/US6855642B2/en not_active Expired - Lifetime
-
2004
- 2004-02-10 US US10/774,588 patent/US7008880B2/en not_active Expired - Lifetime
- 2004-02-10 US US10/774,406 patent/US6962880B2/en not_active Expired - Lifetime
- 2004-02-10 US US10/774,589 patent/US6962881B2/en not_active Expired - Lifetime
-
2005
- 2005-05-19 US US11/132,289 patent/US7250376B2/en not_active Expired - Fee Related
- 2005-05-19 US US11/132,306 patent/US7053007B2/en not_active Expired - Lifetime
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JPH06115903A (ja) * | 1992-10-05 | 1994-04-26 | Tadahiro Omi | 水分発生方法 |
JPH06163517A (ja) * | 1992-11-17 | 1994-06-10 | Tadahiro Omi | 低温酸化膜形成装置および低温酸化膜形成方法 |
JPH06333918A (ja) * | 1993-05-25 | 1994-12-02 | Tadahiro Omi | 絶縁酸化膜の形成方法及び半導体装置 |
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