ATE281698T1 - Halbleitervorrichtung mit selektiv diffundierten bereichen - Google Patents

Halbleitervorrichtung mit selektiv diffundierten bereichen

Info

Publication number
ATE281698T1
ATE281698T1 AT97954669T AT97954669T ATE281698T1 AT E281698 T1 ATE281698 T1 AT E281698T1 AT 97954669 T AT97954669 T AT 97954669T AT 97954669 T AT97954669 T AT 97954669T AT E281698 T1 ATE281698 T1 AT E281698T1
Authority
AT
Austria
Prior art keywords
substrate
solids
diffusion region
dopant source
pattern
Prior art date
Application number
AT97954669T
Other languages
German (de)
English (en)
Inventor
Joerg Horzel
Mia Honore
Johan Nijs
Jozef Szlufcik
Original Assignee
Imec Vzw
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Vzw filed Critical Imec Vzw
Application granted granted Critical
Publication of ATE281698T1 publication Critical patent/ATE281698T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Thyristors (AREA)
AT97954669T 1996-12-24 1997-12-22 Halbleitervorrichtung mit selektiv diffundierten bereichen ATE281698T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP96120865A EP0851511A1 (en) 1996-12-24 1996-12-24 Semiconductor device with two selectively diffused regions
PCT/EP1997/007246 WO1998028798A1 (en) 1996-12-24 1997-12-22 Semiconductor device with selectively diffused regions

Publications (1)

Publication Number Publication Date
ATE281698T1 true ATE281698T1 (de) 2004-11-15

Family

ID=8223558

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97954669T ATE281698T1 (de) 1996-12-24 1997-12-22 Halbleitervorrichtung mit selektiv diffundierten bereichen

Country Status (10)

Country Link
EP (2) EP0851511A1 (enExample)
JP (2) JP3999820B2 (enExample)
CN (1) CN1155104C (enExample)
AT (1) ATE281698T1 (enExample)
AU (1) AU741153B2 (enExample)
CA (1) CA2276008C (enExample)
DE (1) DE69731485T2 (enExample)
DK (1) DK0960443T3 (enExample)
ES (1) ES2232887T3 (enExample)
WO (1) WO1998028798A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
EP1024523A1 (en) * 1999-01-27 2000-08-02 Imec (Interuniversity Microelectronics Center) VZW Method for fabricating thin film semiconductor devices
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
KR100420030B1 (ko) * 2001-04-23 2004-02-25 삼성에스디아이 주식회사 태양 전지의 제조 방법
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
EP1378947A1 (en) 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates
JP4121928B2 (ja) 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
US7799371B2 (en) 2005-11-17 2010-09-21 Palo Alto Research Center Incorporated Extruding/dispensing multiple materials to form high-aspect ratio extruded structures
AU2006317517A1 (en) 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited High efficiency solar cell fabrication
JP5126795B2 (ja) * 2005-12-21 2013-01-23 サンパワー コーポレイション 裏面電極型太陽電池構造及びその製造プロセス
US7928015B2 (en) * 2006-12-12 2011-04-19 Palo Alto Research Center Incorporated Solar cell fabrication using extruded dopant-bearing materials
WO2008103293A1 (en) * 2007-02-16 2008-08-28 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
JP5374504B2 (ja) * 2007-07-18 2013-12-25 アイメック エミッタ構造の作製方法とその結果のエミッタ構造
ES2505322T3 (es) 2007-07-26 2014-10-09 Universität Konstanz Método para producir una célula solar de silicio con un emisor decapado por grabado así como una célula solar correspondiente
DE102007035068A1 (de) * 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle
JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US8293568B2 (en) * 2008-07-28 2012-10-23 Day4 Energy Inc. Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process
JP5344872B2 (ja) * 2008-08-27 2013-11-20 三菱電機株式会社 光起電力装置
US7999175B2 (en) 2008-09-09 2011-08-16 Palo Alto Research Center Incorporated Interdigitated back contact silicon solar cells with laser ablated grooves
JP5029921B2 (ja) * 2009-01-19 2012-09-19 シャープ株式会社 太陽電池セルの製造方法
DE102009018653B4 (de) * 2009-03-04 2015-12-03 SolarWorld Industries Thüringen GmbH Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken
DE102009041546A1 (de) * 2009-03-27 2010-10-14 Bosch Solar Energy Ag Verfahren zur Herstellung von Solarzellen mit selektivem Emitter
KR101597825B1 (ko) * 2009-07-24 2016-02-25 엘지전자 주식회사 태양전지, 태양전지의 제조방법 및 열확산용 열처리 장치
NL2003324C2 (en) * 2009-07-31 2011-02-02 Otb Solar Bv Photovoltaic cell with a selective emitter and method for making the same.
KR101611456B1 (ko) * 2009-09-02 2016-04-11 엘지이노텍 주식회사 인계 분산제를 포함하는 전극 형성용 페이스트 조성물
US8735234B2 (en) * 2010-02-18 2014-05-27 Varian Semiconductor Equipment Associates, Inc. Self-aligned ion implantation for IBC solar cells
WO2011110231A1 (en) * 2010-03-12 2011-09-15 Q-Cells Se Method and in-line production system for the production of solar cells
KR101046219B1 (ko) * 2010-04-02 2011-07-04 엘지전자 주식회사 선택적 에미터를 갖는 태양전지
JP5734734B2 (ja) * 2010-05-18 2015-06-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体上に電流トラックを形成する方法
CN101866971A (zh) * 2010-05-18 2010-10-20 常州亿晶光电科技有限公司 具有选择性发射级太阳能电池片
CN101866984B (zh) * 2010-05-18 2015-01-07 常州亿晶光电科技有限公司 对晶体硅电池片表面选择性掺杂制发射级的方法
DE102010024308A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle
JP5538103B2 (ja) * 2010-07-07 2014-07-02 三菱電機株式会社 太陽電池セルの製造方法
US20110139231A1 (en) * 2010-08-25 2011-06-16 Daniel Meier Back junction solar cell with selective front surface field
KR101733055B1 (ko) * 2010-09-06 2017-05-24 엘지전자 주식회사 태양 전지 모듈
CN102468364A (zh) * 2010-11-05 2012-05-23 无锡尚德太阳能电力有限公司 一种选择性发射极太阳电池及其制作方法
JP4978759B1 (ja) * 2010-11-17 2012-07-18 日立化成工業株式会社 太陽電池の製造方法
CN102110721A (zh) * 2010-12-17 2011-06-29 福建省上杭县九洲硅业有限公司 晶体硅太阳能电池的梯度型背表面场及其制备方法
CN102082210A (zh) * 2010-12-18 2011-06-01 广东爱康太阳能科技有限公司 制造细栅选择性发射极晶硅太阳电池的方法
KR101198438B1 (ko) 2010-12-31 2012-11-06 현대중공업 주식회사 양면 수광형 국부화 에미터 태양전지 및 그 제조 방법
KR101114198B1 (ko) 2010-12-31 2012-03-13 현대중공업 주식회사 국부화 에미터 태양전지 및 그 제조 방법
DE102011002748A1 (de) 2011-01-17 2012-07-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Silizium-Solarzelle
US8962424B2 (en) 2011-03-03 2015-02-24 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
KR101071546B1 (ko) 2011-04-26 2011-10-10 주식회사 톱텍 태양전지 제조방법 및 이를 통해 제조된 태양전지
DE102011051040A1 (de) * 2011-06-14 2012-12-20 Solarworld Innovations Gmbh Verfahren zum Herstellen einer Solarzelle und Verfahren zum Herstellen einer Metallisierungsstruktur
CN102306684B (zh) * 2011-09-19 2016-01-20 苏州旭环光伏科技有限公司 一种三级掺杂水平的选择性发射极及其制备方法
TWI424584B (zh) * 2011-11-30 2014-01-21 Au Optronics Corp 製作太陽能電池之方法
US20130199604A1 (en) * 2012-02-06 2013-08-08 Silicon Solar Solutions Solar cells and methods of fabrication thereof
US8895325B2 (en) * 2012-04-27 2014-11-25 Varian Semiconductor Equipment Associates, Inc. System and method for aligning substrates for multiple implants
KR102039611B1 (ko) * 2012-05-22 2019-11-01 주성엔지니어링(주) 기판형 태양 전지 및 그의 제조 방법, 기판형 태양 전지의 도핑 방법 및 장치
CN102856436A (zh) * 2012-09-05 2013-01-02 友达光电股份有限公司 太阳能电池及其制作方法
JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
US9960287B2 (en) 2014-02-11 2018-05-01 Picasolar, Inc. Solar cells and methods of fabrication thereof
JP6661891B2 (ja) * 2015-05-07 2020-03-11 日立化成株式会社 太陽電池素子の製造方法及び太陽電池素子
JP6270889B2 (ja) * 2016-03-16 2018-01-31 三菱電機株式会社 太陽電池の製造方法
KR102045989B1 (ko) 2018-03-14 2019-11-18 한국과학기술연구원 상호 확산을 사용한 반도체 소자 및 이를 제조하는 방법
WO2019206679A1 (en) 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Passivated layer stack for a light harvesting device
CN113675289B (zh) * 2021-10-22 2022-03-01 浙江晶科能源有限公司 光伏电池及其制备方法、光伏组件
CN116722056A (zh) * 2022-05-26 2023-09-08 浙江晶科能源有限公司 太阳能电池及太阳能电池的制备方法、光伏组件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2238251B1 (enExample) * 1973-07-03 1977-09-16 Telecommunications Sa
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
DE4401782C2 (de) * 1994-01-21 2001-08-02 Angew Solarenergie Ase Gmbh Verfahren zur Herstellung eines lokal flachen Emitters zwischen den Kontaktfingern einer Solarzelle
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法

Also Published As

Publication number Publication date
DK0960443T3 (da) 2005-03-14
CA2276008A1 (en) 1998-07-02
EP0960443B1 (en) 2004-11-03
CN1241298A (zh) 2000-01-12
AU5955598A (en) 1998-07-17
CN1155104C (zh) 2004-06-23
CA2276008C (en) 2005-03-22
AU741153B2 (en) 2001-11-22
DE69731485T2 (de) 2005-10-27
EP0960443A1 (en) 1999-12-01
JP2002503390A (ja) 2002-01-29
JP2007235174A (ja) 2007-09-13
EP0851511A1 (en) 1998-07-01
ES2232887T3 (es) 2005-06-01
JP3999820B2 (ja) 2007-10-31
DE69731485D1 (de) 2004-12-09
WO1998028798A1 (en) 1998-07-02

Similar Documents

Publication Publication Date Title
DE69731485D1 (de) Halbleitervorrichtung mit selektiv diffundierten bereichen
KR960035794A (ko) 엔모스(nmos) 집적회로장치에서 서브문턱전류를 감소시키는 큰 경사각도 붕소 이온주입 방법
KR920017245A (ko) 반도체장치와 그의 제조방법
KR900001000A (ko) 단일 폴리실리콘 자기-정합 트랜지스터 및 이의 제조 방법
TW369683B (en) A method for forming a semiconductor device having a shallow junction and a low sheet resistance
KR960019649A (ko) 반도체 장치의 제조방법
KR970077166A (ko) 반도체 기판에 삼중웰을 형성하는 방법
EP0341461B1 (en) Process for making a bipolar integrated circuit
TW334641B (en) Method of manufacturing semiconductor device
KR100370784B1 (ko) 반도체 소자의 제조방법
KR910005458A (ko) 반도체장비의 제조방법
WO2003007361A3 (de) Verfahren zur herstellung eines bipolartransistors mit polysiliziumemitter
KR970017994A (ko) 다수의 마이크로 전자 회로를 soi상에 제작하기 위한 방법
KR970051950A (ko) 반도체장치의 고저항 영역 형성방법
KR900019257A (ko) 쌍극 범프 트랜지스터와 그 트랜지스터 제조 방법
KR930010671B1 (ko) 반도체 장치의 제조방법
KR960026148A (ko) 반도체소자 제조방법
JPH09134971A (ja) Ｓｏｉ上の多数のマイクロ電子回路の製造方法
KR970008571A (ko) 모스 전계 효과 트랜지스터 및 그 제조방법
KR970052787A (ko) 금속배선간 절연막 형성방법
KR960026753A (ko) 트윈(twin) 웰 제조방법
DE59608249D1 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
KR970063479A (ko) 반도체 장치의 이온 주입 방법
KR960026948A (ko) 모스펫 제조방법
KR960026653A (ko) 다중-웰 구조를 갖는 반도체 소자 제조방법

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 0960443

Country of ref document: EP