ES2232887T3 - Dispositivo semiconductor con zonas difusas selectivamente. - Google Patents
Dispositivo semiconductor con zonas difusas selectivamente.Info
- Publication number
- ES2232887T3 ES2232887T3 ES97954669T ES97954669T ES2232887T3 ES 2232887 T3 ES2232887 T3 ES 2232887T3 ES 97954669 T ES97954669 T ES 97954669T ES 97954669 T ES97954669 T ES 97954669T ES 2232887 T3 ES2232887 T3 ES 2232887T3
- Authority
- ES
- Spain
- Prior art keywords
- dopant
- substrate
- zone
- doped
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 238000000034 method Methods 0.000 claims abstract description 77
- 238000009792 diffusion process Methods 0.000 claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- 230000007480 spreading Effects 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 42
- 230000008569 process Effects 0.000 description 31
- 238000001465 metallisation Methods 0.000 description 22
- 235000015927 pasta Nutrition 0.000 description 14
- 238000007650 screen-printing Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N Adamantane Natural products C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96120865A EP0851511A1 (en) | 1996-12-24 | 1996-12-24 | Semiconductor device with two selectively diffused regions |
| EP96120865 | 1996-12-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2232887T3 true ES2232887T3 (es) | 2005-06-01 |
Family
ID=8223558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES97954669T Expired - Lifetime ES2232887T3 (es) | 1996-12-24 | 1997-12-22 | Dispositivo semiconductor con zonas difusas selectivamente. |
Country Status (10)
| Country | Link |
|---|---|
| EP (2) | EP0851511A1 (enExample) |
| JP (2) | JP3999820B2 (enExample) |
| CN (1) | CN1155104C (enExample) |
| AT (1) | ATE281698T1 (enExample) |
| AU (1) | AU741153B2 (enExample) |
| CA (1) | CA2276008C (enExample) |
| DE (1) | DE69731485T2 (enExample) |
| DK (1) | DK0960443T3 (enExample) |
| ES (1) | ES2232887T3 (enExample) |
| WO (1) | WO1998028798A1 (enExample) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000138386A (ja) * | 1998-11-04 | 2000-05-16 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法およびこの方法で製造された太陽電池 |
| EP1024523A1 (en) * | 1999-01-27 | 2000-08-02 | Imec (Interuniversity Microelectronics Center) VZW | Method for fabricating thin film semiconductor devices |
| NL1012961C2 (nl) * | 1999-09-02 | 2001-03-05 | Stichting Energie | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| KR100420030B1 (ko) * | 2001-04-23 | 2004-02-25 | 삼성에스디아이 주식회사 | 태양 전지의 제조 방법 |
| GB0114896D0 (en) * | 2001-06-19 | 2001-08-08 | Bp Solar Ltd | Process for manufacturing a solar cell |
| EP1378947A1 (en) | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
| JP4121928B2 (ja) | 2003-10-08 | 2008-07-23 | シャープ株式会社 | 太陽電池の製造方法 |
| JP4232597B2 (ja) * | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | シリコン太陽電池セルとその製造方法 |
| JP2006073617A (ja) * | 2004-08-31 | 2006-03-16 | Sharp Corp | 太陽電池およびその製造方法 |
| US7799371B2 (en) | 2005-11-17 | 2010-09-21 | Palo Alto Research Center Incorporated | Extruding/dispensing multiple materials to form high-aspect ratio extruded structures |
| AU2006317517A1 (en) | 2005-11-24 | 2007-05-31 | Newsouth Innovations Pty Limited | High efficiency solar cell fabrication |
| JP5126795B2 (ja) * | 2005-12-21 | 2013-01-23 | サンパワー コーポレイション | 裏面電極型太陽電池構造及びその製造プロセス |
| US7928015B2 (en) * | 2006-12-12 | 2011-04-19 | Palo Alto Research Center Incorporated | Solar cell fabrication using extruded dopant-bearing materials |
| WO2008103293A1 (en) * | 2007-02-16 | 2008-08-28 | Nanogram Corporation | Solar cell structures, photovoltaic modules and corresponding processes |
| JP5374504B2 (ja) * | 2007-07-18 | 2013-12-25 | アイメック | エミッタ構造の作製方法とその結果のエミッタ構造 |
| ES2505322T3 (es) | 2007-07-26 | 2014-10-09 | Universität Konstanz | Método para producir una célula solar de silicio con un emisor decapado por grabado así como una célula solar correspondiente |
| DE102007035068A1 (de) * | 2007-07-26 | 2009-01-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle |
| JP5236914B2 (ja) * | 2007-09-19 | 2013-07-17 | シャープ株式会社 | 太陽電池の製造方法 |
| US8222516B2 (en) * | 2008-02-20 | 2012-07-17 | Sunpower Corporation | Front contact solar cell with formed emitter |
| US8293568B2 (en) * | 2008-07-28 | 2012-10-23 | Day4 Energy Inc. | Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process |
| JP5344872B2 (ja) * | 2008-08-27 | 2013-11-20 | 三菱電機株式会社 | 光起電力装置 |
| US7999175B2 (en) | 2008-09-09 | 2011-08-16 | Palo Alto Research Center Incorporated | Interdigitated back contact silicon solar cells with laser ablated grooves |
| JP5029921B2 (ja) * | 2009-01-19 | 2012-09-19 | シャープ株式会社 | 太陽電池セルの製造方法 |
| DE102009018653B4 (de) * | 2009-03-04 | 2015-12-03 | SolarWorld Industries Thüringen GmbH | Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken |
| DE102009041546A1 (de) * | 2009-03-27 | 2010-10-14 | Bosch Solar Energy Ag | Verfahren zur Herstellung von Solarzellen mit selektivem Emitter |
| KR101597825B1 (ko) * | 2009-07-24 | 2016-02-25 | 엘지전자 주식회사 | 태양전지, 태양전지의 제조방법 및 열확산용 열처리 장치 |
| NL2003324C2 (en) * | 2009-07-31 | 2011-02-02 | Otb Solar Bv | Photovoltaic cell with a selective emitter and method for making the same. |
| KR101611456B1 (ko) * | 2009-09-02 | 2016-04-11 | 엘지이노텍 주식회사 | 인계 분산제를 포함하는 전극 형성용 페이스트 조성물 |
| US8735234B2 (en) * | 2010-02-18 | 2014-05-27 | Varian Semiconductor Equipment Associates, Inc. | Self-aligned ion implantation for IBC solar cells |
| WO2011110231A1 (en) * | 2010-03-12 | 2011-09-15 | Q-Cells Se | Method and in-line production system for the production of solar cells |
| KR101046219B1 (ko) * | 2010-04-02 | 2011-07-04 | 엘지전자 주식회사 | 선택적 에미터를 갖는 태양전지 |
| JP5734734B2 (ja) * | 2010-05-18 | 2015-06-17 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 半導体上に電流トラックを形成する方法 |
| CN101866971A (zh) * | 2010-05-18 | 2010-10-20 | 常州亿晶光电科技有限公司 | 具有选择性发射级太阳能电池片 |
| CN101866984B (zh) * | 2010-05-18 | 2015-01-07 | 常州亿晶光电科技有限公司 | 对晶体硅电池片表面选择性掺杂制发射级的方法 |
| DE102010024308A1 (de) * | 2010-06-18 | 2011-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle |
| JP5538103B2 (ja) * | 2010-07-07 | 2014-07-02 | 三菱電機株式会社 | 太陽電池セルの製造方法 |
| US20110139231A1 (en) * | 2010-08-25 | 2011-06-16 | Daniel Meier | Back junction solar cell with selective front surface field |
| KR101733055B1 (ko) * | 2010-09-06 | 2017-05-24 | 엘지전자 주식회사 | 태양 전지 모듈 |
| CN102468364A (zh) * | 2010-11-05 | 2012-05-23 | 无锡尚德太阳能电力有限公司 | 一种选择性发射极太阳电池及其制作方法 |
| JP4978759B1 (ja) * | 2010-11-17 | 2012-07-18 | 日立化成工業株式会社 | 太陽電池の製造方法 |
| CN102110721A (zh) * | 2010-12-17 | 2011-06-29 | 福建省上杭县九洲硅业有限公司 | 晶体硅太阳能电池的梯度型背表面场及其制备方法 |
| CN102082210A (zh) * | 2010-12-18 | 2011-06-01 | 广东爱康太阳能科技有限公司 | 制造细栅选择性发射极晶硅太阳电池的方法 |
| KR101198438B1 (ko) | 2010-12-31 | 2012-11-06 | 현대중공업 주식회사 | 양면 수광형 국부화 에미터 태양전지 및 그 제조 방법 |
| KR101114198B1 (ko) | 2010-12-31 | 2012-03-13 | 현대중공업 주식회사 | 국부화 에미터 태양전지 및 그 제조 방법 |
| DE102011002748A1 (de) | 2011-01-17 | 2012-07-19 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Silizium-Solarzelle |
| US8962424B2 (en) | 2011-03-03 | 2015-02-24 | Palo Alto Research Center Incorporated | N-type silicon solar cell with contact/protection structures |
| KR101071546B1 (ko) | 2011-04-26 | 2011-10-10 | 주식회사 톱텍 | 태양전지 제조방법 및 이를 통해 제조된 태양전지 |
| DE102011051040A1 (de) * | 2011-06-14 | 2012-12-20 | Solarworld Innovations Gmbh | Verfahren zum Herstellen einer Solarzelle und Verfahren zum Herstellen einer Metallisierungsstruktur |
| CN102306684B (zh) * | 2011-09-19 | 2016-01-20 | 苏州旭环光伏科技有限公司 | 一种三级掺杂水平的选择性发射极及其制备方法 |
| TWI424584B (zh) * | 2011-11-30 | 2014-01-21 | Au Optronics Corp | 製作太陽能電池之方法 |
| US20130199604A1 (en) * | 2012-02-06 | 2013-08-08 | Silicon Solar Solutions | Solar cells and methods of fabrication thereof |
| US8895325B2 (en) * | 2012-04-27 | 2014-11-25 | Varian Semiconductor Equipment Associates, Inc. | System and method for aligning substrates for multiple implants |
| KR102039611B1 (ko) * | 2012-05-22 | 2019-11-01 | 주성엔지니어링(주) | 기판형 태양 전지 및 그의 제조 방법, 기판형 태양 전지의 도핑 방법 및 장치 |
| CN102856436A (zh) * | 2012-09-05 | 2013-01-02 | 友达光电股份有限公司 | 太阳能电池及其制作方法 |
| JP6379461B2 (ja) * | 2013-09-02 | 2018-08-29 | 日立化成株式会社 | ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子 |
| US9960287B2 (en) | 2014-02-11 | 2018-05-01 | Picasolar, Inc. | Solar cells and methods of fabrication thereof |
| JP6661891B2 (ja) * | 2015-05-07 | 2020-03-11 | 日立化成株式会社 | 太陽電池素子の製造方法及び太陽電池素子 |
| JP6270889B2 (ja) * | 2016-03-16 | 2018-01-31 | 三菱電機株式会社 | 太陽電池の製造方法 |
| KR102045989B1 (ko) | 2018-03-14 | 2019-11-18 | 한국과학기술연구원 | 상호 확산을 사용한 반도체 소자 및 이를 제조하는 방법 |
| WO2019206679A1 (en) | 2018-04-24 | 2019-10-31 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Passivated layer stack for a light harvesting device |
| CN113675289B (zh) * | 2021-10-22 | 2022-03-01 | 浙江晶科能源有限公司 | 光伏电池及其制备方法、光伏组件 |
| CN116722056A (zh) * | 2022-05-26 | 2023-09-08 | 浙江晶科能源有限公司 | 太阳能电池及太阳能电池的制备方法、光伏组件 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2238251B1 (enExample) * | 1973-07-03 | 1977-09-16 | Telecommunications Sa | |
| US4152824A (en) * | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells |
| US4478879A (en) * | 1983-02-10 | 1984-10-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Screen printed interdigitated back contact solar cell |
| DE4217428A1 (de) * | 1991-12-09 | 1993-06-17 | Deutsche Aerospace | Hochleistungs-solarzellenstruktur |
| DE4401782C2 (de) * | 1994-01-21 | 2001-08-02 | Angew Solarenergie Ase Gmbh | Verfahren zur Herstellung eines lokal flachen Emitters zwischen den Kontaktfingern einer Solarzelle |
| JP3032422B2 (ja) * | 1994-04-28 | 2000-04-17 | シャープ株式会社 | 太陽電池セルとその製造方法 |
-
1996
- 1996-12-24 EP EP96120865A patent/EP0851511A1/en not_active Withdrawn
-
1997
- 1997-12-22 CN CNB971808910A patent/CN1155104C/zh not_active Expired - Lifetime
- 1997-12-22 JP JP52840198A patent/JP3999820B2/ja not_active Expired - Lifetime
- 1997-12-22 AU AU59555/98A patent/AU741153B2/en not_active Ceased
- 1997-12-22 WO PCT/EP1997/007246 patent/WO1998028798A1/en not_active Ceased
- 1997-12-22 ES ES97954669T patent/ES2232887T3/es not_active Expired - Lifetime
- 1997-12-22 DE DE69731485T patent/DE69731485T2/de not_active Expired - Lifetime
- 1997-12-22 EP EP97954669A patent/EP0960443B1/en not_active Expired - Lifetime
- 1997-12-22 AT AT97954669T patent/ATE281698T1/de active
- 1997-12-22 DK DK97954669T patent/DK0960443T3/da active
- 1997-12-22 CA CA002276008A patent/CA2276008C/en not_active Expired - Fee Related
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2007
- 2007-05-25 JP JP2007139083A patent/JP2007235174A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DK0960443T3 (da) | 2005-03-14 |
| CA2276008A1 (en) | 1998-07-02 |
| EP0960443B1 (en) | 2004-11-03 |
| CN1241298A (zh) | 2000-01-12 |
| AU5955598A (en) | 1998-07-17 |
| CN1155104C (zh) | 2004-06-23 |
| CA2276008C (en) | 2005-03-22 |
| AU741153B2 (en) | 2001-11-22 |
| DE69731485T2 (de) | 2005-10-27 |
| EP0960443A1 (en) | 1999-12-01 |
| JP2002503390A (ja) | 2002-01-29 |
| JP2007235174A (ja) | 2007-09-13 |
| EP0851511A1 (en) | 1998-07-01 |
| ATE281698T1 (de) | 2004-11-15 |
| JP3999820B2 (ja) | 2007-10-31 |
| DE69731485D1 (de) | 2004-12-09 |
| WO1998028798A1 (en) | 1998-07-02 |
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