DE69731485D1 - Halbleitervorrichtung mit selektiv diffundierten bereichen - Google Patents

Halbleitervorrichtung mit selektiv diffundierten bereichen

Info

Publication number
DE69731485D1
DE69731485D1 DE69731485T DE69731485T DE69731485D1 DE 69731485 D1 DE69731485 D1 DE 69731485D1 DE 69731485 T DE69731485 T DE 69731485T DE 69731485 T DE69731485 T DE 69731485T DE 69731485 D1 DE69731485 D1 DE 69731485D1
Authority
DE
Germany
Prior art keywords
substrate
solids
diffusion region
dopant source
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69731485T
Other languages
English (en)
Other versions
DE69731485T2 (de
Inventor
Joerg Horzel
Mia Honore
Johan Nijs
Jozef Szlufcik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Application granted granted Critical
Publication of DE69731485D1 publication Critical patent/DE69731485D1/de
Publication of DE69731485T2 publication Critical patent/DE69731485T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Thyristors (AREA)
DE69731485T 1996-12-24 1997-12-22 Halbleitervorrichtung mit selektiv diffundierten bereichen Expired - Lifetime DE69731485T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP96120865A EP0851511A1 (de) 1996-12-24 1996-12-24 Halbleitereinrichtung mit zwei selektiv diffundierten Bereichen
EP96120865 1996-12-24
PCT/EP1997/007246 WO1998028798A1 (en) 1996-12-24 1997-12-22 Semiconductor device with selectively diffused regions

Publications (2)

Publication Number Publication Date
DE69731485D1 true DE69731485D1 (de) 2004-12-09
DE69731485T2 DE69731485T2 (de) 2005-10-27

Family

ID=8223558

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69731485T Expired - Lifetime DE69731485T2 (de) 1996-12-24 1997-12-22 Halbleitervorrichtung mit selektiv diffundierten bereichen

Country Status (10)

Country Link
EP (2) EP0851511A1 (de)
JP (2) JP3999820B2 (de)
CN (1) CN1155104C (de)
AT (1) ATE281698T1 (de)
AU (1) AU741153B2 (de)
CA (1) CA2276008C (de)
DE (1) DE69731485T2 (de)
DK (1) DK0960443T3 (de)
ES (1) ES2232887T3 (de)
WO (1) WO1998028798A1 (de)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
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JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
EP1024523A1 (de) * 1999-01-27 2000-08-02 Imec (Interuniversity Microelectronics Center) VZW Herstellungsverfahren von Dünnschicht-Halbleiterbauelementen
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
KR100420030B1 (ko) * 2001-04-23 2004-02-25 삼성에스디아이 주식회사 태양 전지의 제조 방법
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
EP1378947A1 (de) 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Ätzpaste für Halbleiter und Verwendung einer Ätzpaste zum lokalisierten Ätzen von Halbleitersubstraten
JP4121928B2 (ja) 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
JP4232597B2 (ja) 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
US7906722B2 (en) 2005-04-19 2011-03-15 Palo Alto Research Center Incorporated Concentrating solar collector with solid optical element
US7799371B2 (en) 2005-11-17 2010-09-21 Palo Alto Research Center Incorporated Extruding/dispensing multiple materials to form high-aspect ratio extruded structures
US7765949B2 (en) 2005-11-17 2010-08-03 Palo Alto Research Center Incorporated Extrusion/dispensing systems and methods
US20070107773A1 (en) 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization
WO2007059578A1 (en) 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited High efficiency solar cell fabrication
US7820475B2 (en) * 2005-12-21 2010-10-26 Sunpower Corporation Back side contact solar cell structures and fabrication processes
US7851693B2 (en) 2006-05-05 2010-12-14 Palo Alto Research Center Incorporated Passively cooled solar concentrating photovoltaic device
US8322025B2 (en) 2006-11-01 2012-12-04 Solarworld Innovations Gmbh Apparatus for forming a plurality of high-aspect ratio gridline structures
US7780812B2 (en) 2006-11-01 2010-08-24 Palo Alto Research Center Incorporated Extrusion head with planarized edge surface
US7922471B2 (en) 2006-11-01 2011-04-12 Palo Alto Research Center Incorporated Extruded structure with equilibrium shape
US8226391B2 (en) 2006-11-01 2012-07-24 Solarworld Innovations Gmbh Micro-extrusion printhead nozzle with tapered cross-section
US7638438B2 (en) 2006-12-12 2009-12-29 Palo Alto Research Center Incorporated Solar cell fabrication using extrusion mask
US7928015B2 (en) 2006-12-12 2011-04-19 Palo Alto Research Center Incorporated Solar cell fabrication using extruded dopant-bearing materials
EP2122691A4 (de) 2007-02-16 2011-02-16 Nanogram Corp Solarzellenstrukturen, pv-module und entsprechende verfahren
US7954449B2 (en) 2007-05-08 2011-06-07 Palo Alto Research Center Incorporated Wiring-free, plumbing-free, cooled, vacuum chuck
WO2009010585A2 (en) * 2007-07-18 2009-01-22 Interuniversitair Microelektronica Centrum Vzw Method for producing an emitter structure and emitter structures resulting therefrom
KR20100036344A (ko) * 2007-07-26 2010-04-07 유니페어지태트 콘스탄츠 백-에칭된 이미터 및 대응하는 태양전지를 갖는 실리콘 태양전지의 제조방법
DE102007035068A1 (de) * 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle
JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
CN102105999A (zh) * 2008-07-28 2011-06-22 达伊4能量有限公司 用低温精密回蚀和钝化过程制备的具有选择性发射极的晶体硅光伏电池
JP5344872B2 (ja) * 2008-08-27 2013-11-20 三菱電機株式会社 光起電力装置
US7999175B2 (en) 2008-09-09 2011-08-16 Palo Alto Research Center Incorporated Interdigitated back contact silicon solar cells with laser ablated grooves
US8117983B2 (en) 2008-11-07 2012-02-21 Solarworld Innovations Gmbh Directional extruded bead control
US9150966B2 (en) 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
US8080729B2 (en) 2008-11-24 2011-12-20 Palo Alto Research Center Incorporated Melt planarization of solar cell bus bars
US8960120B2 (en) 2008-12-09 2015-02-24 Palo Alto Research Center Incorporated Micro-extrusion printhead with nozzle valves
JP5029921B2 (ja) * 2009-01-19 2012-09-19 シャープ株式会社 太陽電池セルの製造方法
DE102009018653B4 (de) * 2009-03-04 2015-12-03 SolarWorld Industries Thüringen GmbH Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken
DE102009041546A1 (de) 2009-03-27 2010-10-14 Bosch Solar Energy Ag Verfahren zur Herstellung von Solarzellen mit selektivem Emitter
KR101597825B1 (ko) * 2009-07-24 2016-02-25 엘지전자 주식회사 태양전지, 태양전지의 제조방법 및 열확산용 열처리 장치
NL2003324C2 (en) * 2009-07-31 2011-02-02 Otb Solar Bv Photovoltaic cell with a selective emitter and method for making the same.
KR101611456B1 (ko) * 2009-09-02 2016-04-11 엘지이노텍 주식회사 인계 분산제를 포함하는 전극 형성용 페이스트 조성물
US8735234B2 (en) 2010-02-18 2014-05-27 Varian Semiconductor Equipment Associates, Inc. Self-aligned ion implantation for IBC solar cells
WO2011110231A1 (en) * 2010-03-12 2011-09-15 Q-Cells Se Method and in-line production system for the production of solar cells
KR101046219B1 (ko) * 2010-04-02 2011-07-04 엘지전자 주식회사 선택적 에미터를 갖는 태양전지
CN101866984B (zh) * 2010-05-18 2015-01-07 常州亿晶光电科技有限公司 对晶体硅电池片表面选择性掺杂制发射级的方法
JP5734734B2 (ja) * 2010-05-18 2015-06-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体上に電流トラックを形成する方法
CN101866971A (zh) * 2010-05-18 2010-10-20 常州亿晶光电科技有限公司 具有选择性发射级太阳能电池片
DE102010024308A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle
JP5538103B2 (ja) * 2010-07-07 2014-07-02 三菱電機株式会社 太陽電池セルの製造方法
US20110139231A1 (en) * 2010-08-25 2011-06-16 Daniel Meier Back junction solar cell with selective front surface field
KR101733055B1 (ko) * 2010-09-06 2017-05-24 엘지전자 주식회사 태양 전지 모듈
CN102468364A (zh) * 2010-11-05 2012-05-23 无锡尚德太阳能电力有限公司 一种选择性发射极太阳电池及其制作方法
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CN102110721A (zh) * 2010-12-17 2011-06-29 福建省上杭县九洲硅业有限公司 晶体硅太阳能电池的梯度型背表面场及其制备方法
CN102082210A (zh) * 2010-12-18 2011-06-01 广东爱康太阳能科技有限公司 制造细栅选择性发射极晶硅太阳电池的方法
KR101114198B1 (ko) 2010-12-31 2012-03-13 현대중공업 주식회사 국부화 에미터 태양전지 및 그 제조 방법
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KR102039611B1 (ko) * 2012-05-22 2019-11-01 주성엔지니어링(주) 기판형 태양 전지 및 그의 제조 방법, 기판형 태양 전지의 도핑 방법 및 장치
CN102856436A (zh) * 2012-09-05 2013-01-02 友达光电股份有限公司 太阳能电池及其制作方法
JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
US9960287B2 (en) 2014-02-11 2018-05-01 Picasolar, Inc. Solar cells and methods of fabrication thereof
JP6661891B2 (ja) * 2015-05-07 2020-03-11 日立化成株式会社 太陽電池素子の製造方法及び太陽電池素子
JP6270889B2 (ja) * 2016-03-16 2018-01-31 三菱電機株式会社 太陽電池の製造方法
KR102045989B1 (ko) 2018-03-14 2019-11-18 한국과학기술연구원 상호 확산을 사용한 반도체 소자 및 이를 제조하는 방법
WO2019206679A1 (en) 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Passivated layer stack for a light harvesting device
CN113675289B (zh) * 2021-10-22 2022-03-01 浙江晶科能源有限公司 光伏电池及其制备方法、光伏组件

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Also Published As

Publication number Publication date
CA2276008A1 (en) 1998-07-02
JP2002503390A (ja) 2002-01-29
EP0960443A1 (de) 1999-12-01
EP0851511A1 (de) 1998-07-01
DK0960443T3 (da) 2005-03-14
JP2007235174A (ja) 2007-09-13
AU5955598A (en) 1998-07-17
CA2276008C (en) 2005-03-22
EP0960443B1 (de) 2004-11-03
DE69731485T2 (de) 2005-10-27
CN1155104C (zh) 2004-06-23
ATE281698T1 (de) 2004-11-15
CN1241298A (zh) 2000-01-12
ES2232887T3 (es) 2005-06-01
AU741153B2 (en) 2001-11-22
JP3999820B2 (ja) 2007-10-31
WO1998028798A1 (en) 1998-07-02

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