DE69926002D1 - Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode - Google Patents
Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten DiodeInfo
- Publication number
- DE69926002D1 DE69926002D1 DE69926002T DE69926002T DE69926002D1 DE 69926002 D1 DE69926002 D1 DE 69926002D1 DE 69926002 T DE69926002 T DE 69926002T DE 69926002 T DE69926002 T DE 69926002T DE 69926002 D1 DE69926002 D1 DE 69926002D1
- Authority
- DE
- Germany
- Prior art keywords
- diode
- integration
- fabricating
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000010354 integration Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000002019 doping agent Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99402846A EP1102318B1 (de) | 1999-11-17 | 1999-11-17 | Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69926002D1 true DE69926002D1 (de) | 2005-08-04 |
DE69926002T2 DE69926002T2 (de) | 2006-05-11 |
Family
ID=8242179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69926002T Expired - Fee Related DE69926002T2 (de) | 1999-11-17 | 1999-11-17 | Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode |
Country Status (4)
Country | Link |
---|---|
US (1) | US6773977B1 (de) |
EP (1) | EP1102318B1 (de) |
AT (1) | ATE298929T1 (de) |
DE (1) | DE69926002T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI236101B (en) * | 2004-10-18 | 2005-07-11 | Episil Technologies Inc | Method for fabricating power MOSFET |
KR100657911B1 (ko) * | 2004-11-10 | 2006-12-14 | 삼성전자주식회사 | 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자 |
WO2007006337A1 (en) | 2005-07-13 | 2007-01-18 | Freescale Semiconductor, Inc. | A temperature sensing device |
WO2008038439A1 (fr) * | 2006-09-28 | 2008-04-03 | Sharp Kabushiki Kaisha | Panneau d'affichage et dispositif d'affichage |
CN101589471B (zh) * | 2007-01-04 | 2012-05-23 | 飞思卡尔半导体公司 | 半导体器件及形成半导体器件的方法 |
CN108538866B (zh) * | 2018-06-13 | 2024-04-26 | 中山大学 | 一种高温环境原位探测GaN基功率器件工作温度的传感器及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53108776A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Semiconductor device |
US4837176A (en) * | 1987-01-30 | 1989-06-06 | Motorola Inc. | Integrated circuit structures having polycrystalline electrode contacts and process |
JPH02185069A (ja) * | 1988-12-02 | 1990-07-19 | Motorola Inc | 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス |
US5985708A (en) * | 1996-03-13 | 1999-11-16 | Kabushiki Kaisha Toshiba | Method of manufacturing vertical power device |
US5763916A (en) * | 1996-04-19 | 1998-06-09 | Micron Technology, Inc. | Structure and method for improved storage node isolation |
JP3332825B2 (ja) * | 1997-10-27 | 2002-10-07 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6091114A (en) * | 1998-03-31 | 2000-07-18 | Texas Instruments Incorporated | Method and apparatus for protecting gate oxide from process-induced charging effects |
-
1999
- 1999-11-17 AT AT99402846T patent/ATE298929T1/de not_active IP Right Cessation
- 1999-11-17 DE DE69926002T patent/DE69926002T2/de not_active Expired - Fee Related
- 1999-11-17 EP EP99402846A patent/EP1102318B1/de not_active Expired - Lifetime
-
2000
- 2000-11-17 US US09/715,748 patent/US6773977B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1102318B1 (de) | 2005-06-29 |
ATE298929T1 (de) | 2005-07-15 |
DE69926002T2 (de) | 2006-05-11 |
EP1102318A1 (de) | 2001-05-23 |
US6773977B1 (en) | 2004-08-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |