DE69926002D1 - Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode - Google Patents

Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode

Info

Publication number
DE69926002D1
DE69926002D1 DE69926002T DE69926002T DE69926002D1 DE 69926002 D1 DE69926002 D1 DE 69926002D1 DE 69926002 T DE69926002 T DE 69926002T DE 69926002 T DE69926002 T DE 69926002T DE 69926002 D1 DE69926002 D1 DE 69926002D1
Authority
DE
Germany
Prior art keywords
diode
integration
fabricating
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69926002T
Other languages
English (en)
Other versions
DE69926002T2 (de
Inventor
Jean-Michel Reynes
Ivana Deram
Evgueniy Stefanov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Components Industries LLC
NXP USA Inc
Original Assignee
Semiconductor Components Industries LLC
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Industries LLC, Freescale Semiconductor Inc filed Critical Semiconductor Components Industries LLC
Publication of DE69926002D1 publication Critical patent/DE69926002D1/de
Application granted granted Critical
Publication of DE69926002T2 publication Critical patent/DE69926002T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66719—With a step of forming an insulating sidewall spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69926002T 1999-11-17 1999-11-17 Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode Expired - Fee Related DE69926002T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99402846A EP1102318B1 (de) 1999-11-17 1999-11-17 Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode

Publications (2)

Publication Number Publication Date
DE69926002D1 true DE69926002D1 (de) 2005-08-04
DE69926002T2 DE69926002T2 (de) 2006-05-11

Family

ID=8242179

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69926002T Expired - Fee Related DE69926002T2 (de) 1999-11-17 1999-11-17 Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode

Country Status (4)

Country Link
US (1) US6773977B1 (de)
EP (1) EP1102318B1 (de)
AT (1) ATE298929T1 (de)
DE (1) DE69926002T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI236101B (en) * 2004-10-18 2005-07-11 Episil Technologies Inc Method for fabricating power MOSFET
KR100657911B1 (ko) * 2004-11-10 2006-12-14 삼성전자주식회사 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자
WO2007006337A1 (en) 2005-07-13 2007-01-18 Freescale Semiconductor, Inc. A temperature sensing device
WO2008038439A1 (fr) * 2006-09-28 2008-04-03 Sharp Kabushiki Kaisha Panneau d'affichage et dispositif d'affichage
CN101589471B (zh) * 2007-01-04 2012-05-23 飞思卡尔半导体公司 半导体器件及形成半导体器件的方法
CN108538866B (zh) * 2018-06-13 2024-04-26 中山大学 一种高温环境原位探测GaN基功率器件工作温度的传感器及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108776A (en) * 1977-03-04 1978-09-21 Nec Corp Semiconductor device
US4837176A (en) * 1987-01-30 1989-06-06 Motorola Inc. Integrated circuit structures having polycrystalline electrode contacts and process
JPH02185069A (ja) * 1988-12-02 1990-07-19 Motorola Inc 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス
US5985708A (en) * 1996-03-13 1999-11-16 Kabushiki Kaisha Toshiba Method of manufacturing vertical power device
US5763916A (en) * 1996-04-19 1998-06-09 Micron Technology, Inc. Structure and method for improved storage node isolation
JP3332825B2 (ja) * 1997-10-27 2002-10-07 三洋電機株式会社 半導体装置の製造方法
US6091114A (en) * 1998-03-31 2000-07-18 Texas Instruments Incorporated Method and apparatus for protecting gate oxide from process-induced charging effects

Also Published As

Publication number Publication date
EP1102318B1 (de) 2005-06-29
ATE298929T1 (de) 2005-07-15
DE69926002T2 (de) 2006-05-11
EP1102318A1 (de) 2001-05-23
US6773977B1 (en) 2004-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee