HK1003548A1 - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
HK1003548A1
HK1003548A1 HK98102683A HK98102683A HK1003548A1 HK 1003548 A1 HK1003548 A1 HK 1003548A1 HK 98102683 A HK98102683 A HK 98102683A HK 98102683 A HK98102683 A HK 98102683A HK 1003548 A1 HK1003548 A1 HK 1003548A1
Authority
HK
Hong Kong
Prior art keywords
sacrificial layer
manufacturing
same
semiconductor device
rib
Prior art date
Application number
HK98102683A
Inventor
Martin Kerber
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of HK1003548A1 publication Critical patent/HK1003548A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The transistor mfr. has a sacrificial layer (4) with an edge (4a) used for adjustment of a mask (12) during a mfg. process. The electrical characteristics of the transistor are independent of the sacrificial layer. Pref. the sacrificial layer is formed as a rib (7) provided by an oxide layer. The underlying surface of the semiconductor substrate (1) incorporates doped regions (5,6) of opposite conductivity on opposite sides of the rib. The edge of the sacrificial layer pref. carries an adjustment marking for alignment of the mask.
HK98102683A 1995-09-19 1998-03-30 Semiconductor device and method of manufacturing the same HK1003548A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19534784A DE19534784C1 (en) 1995-09-19 1995-09-19 Semiconductor circuit element and method for its manufacture

Publications (1)

Publication Number Publication Date
HK1003548A1 true HK1003548A1 (en) 1998-10-30

Family

ID=7772598

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98102683A HK1003548A1 (en) 1995-09-19 1998-03-30 Semiconductor device and method of manufacturing the same

Country Status (8)

Country Link
US (1) US5962901A (en)
EP (1) EP0764983B1 (en)
JP (1) JP3875750B2 (en)
KR (1) KR100279956B1 (en)
AT (1) ATE209395T1 (en)
DE (2) DE19534784C1 (en)
HK (1) HK1003548A1 (en)
TW (1) TW353793B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368970B1 (en) * 2000-08-24 2002-04-09 Infineon Technologies Ag Semiconductor configuration and corresponding production process
EP1505587A2 (en) * 2003-08-07 2005-02-09 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and a method of manufacturing the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3724065A (en) * 1970-10-01 1973-04-03 Texas Instruments Inc Fabrication of an insulated gate field effect transistor device
JPS6197859A (en) * 1984-10-18 1986-05-16 Matsushita Electronics Corp Manufacture of cmos ic
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production
JPH0722179B2 (en) * 1985-12-27 1995-03-08 日本電気株式会社 Method for forming alignment mark of semiconductor wafer
US4690730A (en) * 1986-03-07 1987-09-01 Texas Instruments Incorporated Oxide-capped titanium silicide formation
US4893163A (en) * 1988-03-28 1990-01-09 International Business Machines Corporation Alignment mark system for electron beam/optical mixed lithography
JPH0265254A (en) * 1988-08-31 1990-03-05 Toshiba Corp Semiconductor device
JPH02172253A (en) * 1988-12-24 1990-07-03 Mitsubishi Electric Corp Semiconductor device and its manufacture
US4992394A (en) * 1989-07-31 1991-02-12 At&T Bell Laboratories Self aligned registration marks for integrated circuit fabrication
JPH081930B2 (en) * 1989-09-11 1996-01-10 株式会社東芝 Method for manufacturing semiconductor device
US5214305A (en) * 1990-08-28 1993-05-25 United Microelectronics Corporation Polycide gate MOSFET for integrated circuits
KR940011483B1 (en) * 1990-11-28 1994-12-19 가부시끼가이샤 도시바 Semiconductor device with nitrided gate insulating film
JPH04286361A (en) * 1991-03-15 1992-10-12 Sony Corp Solid-state image sensing device
EP0510370B1 (en) * 1991-03-27 1999-08-25 Fujitsu Limited Semiconductor memory device having thin film transistor and method of producing the same
DE4214302C2 (en) * 1991-05-03 2000-01-13 Hyundai Electronics Ind Process for the production of a CMOS structure with double wells
EP0562309B1 (en) * 1992-03-25 2002-06-12 Texas Instruments Incorporated Planar process using common alignment marks for well implants
JP2809253B2 (en) * 1992-10-02 1998-10-08 富士電機株式会社 Injection control type Schottky barrier rectifier
US5486715A (en) * 1993-10-15 1996-01-23 Ixys Corporation High frequency MOS device
US5397715A (en) * 1993-10-21 1995-03-14 Micrel, Incorporated MOS transistor having increased gate-drain capacitance
JPH07176639A (en) * 1993-12-17 1995-07-14 Nec Corp Semiconductor integrated circuit device and fabrication thereof
US5455444A (en) * 1994-04-22 1995-10-03 United Microelectronics Corporation Double polysilicon electrostatic discharge protection device for SRAM and DRAM memory devices

Also Published As

Publication number Publication date
JP3875750B2 (en) 2007-01-31
JPH09129836A (en) 1997-05-16
TW353793B (en) 1999-03-01
EP0764983A3 (en) 1997-04-02
KR100279956B1 (en) 2001-02-01
DE59608249D1 (en) 2002-01-03
EP0764983B1 (en) 2001-11-21
EP0764983A2 (en) 1997-03-26
US5962901A (en) 1999-10-05
KR970018713A (en) 1997-04-30
DE19534784C1 (en) 1997-04-24
ATE209395T1 (en) 2001-12-15

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20050910