JP5126795B2 - 裏面電極型太陽電池構造及びその製造プロセス - Google Patents
裏面電極型太陽電池構造及びその製造プロセス Download PDFInfo
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Description
本出願は、2005年12月21日付け出願の米国特許仮出願第60/752664号明細書の利益を主張するものであり、参照によりその全体がここに援用される。
本発明は、太陽電池に関し、より詳細には、裏面電極型太陽電池構造若しくはバックコンタクトソーラーセル(back side contact solar cell structures)及びその製造プロセスに関するが、これに限られることはない。
図1Bでは、各損傷部分102が、部分的に除去されている。つまり、ウェハ100の両面は薄化され、損傷部分102の全てではなくいくらかが除去されている。一態様では、約10μmが、水酸化カリウム又は水酸化ナトリウムを含む湿式エッチングプロセスを利用してウェハ100の各面から除去される。
Claims (19)
- 裏面電極型太陽電池の活性拡散領域を形成する方法であって、
太陽電池に加工されるウェハを設け、該ウェハの前面が、前記太陽電池の通常の作動時に太陽の方を向くように構成されており、
P型ドーパント源及びN型ドーパント源を、前記ウェハの、前記太陽電池の前面とは反対側にある裏面に選択的に堆積し、当該P型及びN型ドーパント源が、前記ウェハの前記裏面に直接的に印刷されることによって選択的に堆積され、前記N型ドーパント源は前記P型ドーパント源によって覆われていない前記ウェハの前記裏面の露出した部分上と、前記P型ドーパント源と重なる位置とに選択的に堆積され、
前記P型ドーパント源からドーパントを拡散させ、前記太陽電池のP型活性拡散領域を形成し、前記N型ドーパント源からドーパントを拡散させ、前記太陽電池のN型活性拡散領域を形成する、拡散ステップを行う
ことを含む、方法。 - 前記N型ドーパント源と第1のP型ドーパント源とを前記ウェハの前記裏面の露出した部分上に選択的に堆積し、前記第1のP型ドーパント源に対して低濃度である第2のP型ドーパント源を前記ウェハの前記裏面の露出した部分上と、前記N型ドーパント源及び前記第1のP型ドーパント源に重なる位置とに選択的に堆積することによって、前記第1のP型ドーパント源、前記第2のP型ドーパント源及び前記N型ドーパント源を選択的に堆積し、
前記N型ドーパント源からドーパントを拡散させ、前記太陽電池の前記N型活性拡散領域を形成し、前記第1のP型ドーパント源からドーパントを拡散させ、前記太陽電池の第1のP型活性拡散領域を形成し、前記第2のP型ドーパント源からドーパントを拡散させ、前記太陽電池の第2のP型活性拡散領域を形成する
請求項1に記載の方法。 - 第1のN型ドーパント源と第1のP型ドーパント源とを前記ウェハの前記裏面の露出した部分上に選択的に堆積し、前記第1のP型ドーパント源に対して低濃度である第2のP型ドーパント源を前記ウェハの前記裏面の露出した部分上と前記第1のP型ドーパント源に重なる位置とに選択的に堆積し、前記第1のN型ドーパント源に対して低濃度である第2のN型ドーパント源を前記ウェハの前記裏面の露出した部分上と前記第1のN型ドーパント源及び前記第2のP型ドーパント源に重なる位置とに選択的に堆積することによって、前記第1のP型ドーパント源、前記第2のP型ドーパント源、前記第1のN型ドーパント源及び前記第2のN型ドーパント源を選択的に堆積し、
前記第1のN型ドーパント源からドーパントを拡散させ、前記太陽電池の第1のN型活性拡散領域を形成し、前記第2のN型ドーパント源からドーパントを拡散させ、前記太陽電池の第2のN型活性拡散領域を形成し、前記第1のP型ドーパント源からドーパントを拡散させ、前記太陽電池の第1のP型活性拡散領域を形成し、前記第2のP型ドーパント源からドーパントを拡散させ、前記太陽電池の第2のP型活性拡散領域を形成する
請求項1に記載の方法。 - 前記ウェハの前記前面が、前記P型及びN型ドーパント源を形成する前に、テクスチャリングされる、請求項1から3のいずれか1項に記載の方法。
- 前記ウェハの前面が、テクスチャリングプロセスを使用してテクスチャリングされ、該テクスチャリングプロセスが、
前記ウェハの前面及び裏面を薄化して、該前面及び該裏面上のウェハの損傷部分を部分的に除去し、
前記ウェハの前面及び裏面をテクスチャリングして、当該ウェハの前面及び裏面上に残された損傷部分を除去し、
前記ウェハの裏面を研磨して、当該ウェハの裏面上のテクスチャリングを除去することを含む、請求項4に記載の方法。 - 前記P型及びN型ドーパント源を、スクリーン印刷によって選択的に堆積させる、請求項1に記載の方法。
- 前記P型及びN型ドーパント源を、インクジェット印刷によって選択的に堆積させる、請求項1に記載の方法。
- 前記P型及びN型ドーパント源を、印刷プロセスの単一のパスで選択的に堆積させる、請求項1に記載の方法。
- 前記拡散ステップを行う前に、前記ウェハの裏面に直接的に印刷することによって、P−ドーパント源及びN−ドーパント源を選択的に堆積させ、
前記P型ドーパント源からドーパントを拡散させて前記太陽電池の前記P型活性拡散領域を形成し、前記N型ドーパント源からドーパントを拡散させて前記太陽電池の前記N型活性拡散領域を形成し、前記P−ドーパント源からドーパントを拡散させて前記太陽電池のP−活性拡散領域を形成し、前記N−ドーパント源からドーパントを拡散させて、前記太陽電池のN−活性拡散領域を形成する、拡散ステップを行う
ことをさらに含む、請求項1に記載の方法。 - 裏面電極型太陽電池の活性拡散領域を形成する方法であって、
太陽電池に加工されるウェハを設け、該ウェハの前面が、前記太陽電池の通常の作動時に太陽の方を向くように構成されており、
前記ウェハの、前記太陽電池の前記前面の反対側の裏面に、第1のドーパント種でドープされた第1の組のドーパント源を選択的に堆積させ、該第1の組のドーパント源が、前記ウェハの裏面に直接的に印刷することによって選択的に堆積され、
前記第1のドーパント種とは異なる第2のドーパント種でドープされた第2の組のドーパント源を、前記第1の組のドーパント源によって覆われていない前記ウェハの前記裏面の露出した部分上と、前記第1の組のドーパント源と重なる位置とに堆積させ、
前記第1の組のドーパント源からドーパントを拡散させ、前記太陽電池の第1の組の活性拡散領域を形成し、前記第2の組のドーパント源からドーパントを拡散させ、前記太陽電池の第2の組の活性拡散領域を形成する、拡散ステップを行う
ことを含む、方法。 - 前記第2の組のドーパント源が、スピンコーティングによって前記ウェハの裏面に形成される、請求項10に記載の方法。
- 前記ウェハの前面が、前記第1及び第2の組のドーパント源を形成する前に、テクスチャリングプロセスを利用してテクスチャリングされ、該テクスチャリングプロセスが、
前記ウェハの前面及び裏面を薄化して、前記前面及び裏面の前記ウェハの損傷部分を部分的に除去し、
前記ウェハの前面及び裏面をテクスチャリングして、前記ウェハの前面及び裏面に残された損傷部分を除去し、
前記ウェハの裏面を研磨して、該ウェハの裏面のテクスチャリングを除去する
ことを含む、請求項10または11に記載の方法。 - 前記第2の組のドーパント源が、前記ウェハの裏面に印刷される、請求項10に記載の方法。
- 前記拡散ステップを行う前に、前記ウェハの裏面に第3の組のドーパント源を堆積し、該第3の組のドーパント源が、前記第1の組のドーパント源よりも低濃度でドープされており、
前記第1の組のドーパント源からドーパントを拡散させて前記太陽電池の第1の組の活性拡散領域を形成し、前記第2の組のドーパント源からドーパントを拡散させて前記太陽電池の第2の組の活性拡散領域を形成し、前記第3の組のドーパント源からドーパントを拡散させて前記太陽電池の第3の組の活性拡散領域を形成する、拡散ステップを行う
ことをさらに含む、請求項13に記載の方法。 - 裏面電極型太陽電池において活性拡散領域を形成する方法であって、
前記太陽電池に加工されるウェハの裏面に、第1の組のドーパント源を形成し、該ウェハが、前記太陽電池の通常の作動時に太陽の方を向くように構成されている前面を有し、前記裏面が前記前面の反対側にあり、
前記第1の組のドーパント源上に第2及び第3の組のドーパント源を選択的に堆積させ、前記第2の組のドーパント源が、前記第1の組のドーパント源を通る第1の組の開口内であって前記第1の組のドーパント源によって覆われていない前記ウェハの前記裏面の露出した部分上と、前記第1の組のドーパント源と重なる位置とに選択的に堆積され、前記第3の組のドーパント源が、前記第1の組のドーパント源を通る第2の組の開口内であって前記第1の組のドーパント源によって覆われていない前記ウェハの前記裏面の露出した部分上と、前記第1の組のドーパント源と重なる位置とに選択的に堆積され、前記第1の組のドーパント源が、前記第2の組のドーパント源及び前記第3の組のドーパント源より厚く形成されており、
前記第1の組のドーパント源からドーパントを拡散させて前記太陽電池の第1の組の活性拡散領域を形成し、前記第2の組のドーパント源からドーパントを拡散させて前記太陽電池の第2の組の活性拡散領域を形成し、前記第3の組のドーパント源からドーパントを拡散させて前記太陽電池の第3の組の活性拡散領域を形成し、
前記拡散の後、前記第1、第2及び第3の組のドーパント源の残された部分をエッチャントに曝し、前記第3及び第2の組のドーパント源の残された部分を自己整合エッチングプロセスで除去し、前記第2及び第3の組の活性拡散領域にコンタクト開口を形成し、その際、前記第1の組のドーパント源の残された部分が完全に除去されない
ことを含む、方法。 - 前記第1、第2及び第3の組のドーパント源の残された部分をエッチャントへ曝すことを、時間制御されたエッチングステップを用いて行う、請求項15に記載の方法。
- 前記第1の組のドーパント源を前記ウェハの裏面に形成することが、
ブランケット堆積を行って前記第1の組のドーパント源を形成し、
前記第1の組のドーパント源をパターニングして、前記第1の組のドーパント源を通る前記第1及び第2の組の開口を形成する
ことを含む、請求項15に記載の方法。 - 前記ブランケット堆積が、スピンコーティングによってなされる、請求項17に記載の方法。
- 前記第1の組のドーパント源を選択的に形成する前且つ前記第2及び第3の組のドーパント源を選択的に堆積させる前に、テクスチャリングプロセスを用いて前記ウェハの前面をテクスチャリングし、前記テクスチャリングプロセスが、
前記ウェハの前面及び裏面を薄化し、前記前面及び裏面の前記ウェハの損傷部分を部分的に除去し、
前記ウェハの前面及び裏面をテクスチャリングして、前記ウェハの前面及び裏面に残された損傷部分を除去し、
前記ウェハの裏面を研磨し、前記ウェハの裏面のテクスチャリングを除去する
ことを含む、請求項15に記載の方法。
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EP1964165B1 (en) | 2018-03-14 |
JP2012114452A (ja) | 2012-06-14 |
EP1964165A4 (en) | 2012-03-14 |
US7820475B2 (en) | 2010-10-26 |
CN101443893B (zh) | 2012-02-01 |
US20070151598A1 (en) | 2007-07-05 |
US8163638B2 (en) | 2012-04-24 |
WO2007081510A2 (en) | 2007-07-19 |
WO2007081510A3 (en) | 2008-06-26 |
MY150880A (en) | 2014-03-14 |
CN101443893A (zh) | 2009-05-27 |
JP2009521805A (ja) | 2009-06-04 |
JP5511861B2 (ja) | 2014-06-04 |
AU2006335142B2 (en) | 2011-09-22 |
CN102420271A (zh) | 2012-04-18 |
US8409912B2 (en) | 2013-04-02 |
AU2006335142A1 (en) | 2007-07-19 |
EP1964165A2 (en) | 2008-09-03 |
CN102420271B (zh) | 2016-07-06 |
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