JP6006796B2 - 異なってドープされた領域のパターンの形成方法 - Google Patents
異なってドープされた領域のパターンの形成方法 Download PDFInfo
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- JP6006796B2 JP6006796B2 JP2014523314A JP2014523314A JP6006796B2 JP 6006796 B2 JP6006796 B2 JP 6006796B2 JP 2014523314 A JP2014523314 A JP 2014523314A JP 2014523314 A JP2014523314 A JP 2014523314A JP 6006796 B2 JP6006796 B2 JP 6006796B2
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- 238000000034 method Methods 0.000 title claims description 63
- 239000000758 substrate Substances 0.000 claims description 56
- 239000002019 doping agent Substances 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 8
- 238000000608 laser ablation Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 86
- 230000008569 process Effects 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000002513 implantation Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000001994 activation Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
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- 238000007650 screen-printing Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
Claims (9)
- 半導体基板の同じ側(30)に第1ドープ領域(22)および第2ドープ領域(13)を備えた、異なってドープされた領域のパターンを形成する方法であって、
パターン化ドープ層(12)を、半導体基板(10)の表面に、少なくとも1つの第1ドープ領域(22)が形成される所定の場所に設けるステップと、
パターン化ドープ層(12)をマスクとして用いて、800℃〜1200℃の範囲の温度で、半導体基板の同じ側に、少なくとも1つの第2ドープ領域(13)を選択的にエピタキシャル成長するステップとを含み、これにより選択成長と同時に、パターン化ドープ層(12)からのドーパントを半導体基板(10)に打ち込んで、第1ドープ領域(22)を所定の場所に形成するようにした方法。 - パターン化ドープ層(12)は、ドープ誘電体層である請求項1記載の方法。
- 第1ドープ領域(22)および第2ドープ領域(13)は、反対のドーピング型である請求項1または2記載の方法。
- 第1ドープ領域(22)および第2ドープ領域(13)は、異なるドーピングプロファイルを有する請求項1〜3のいずれかに記載の方法。
- パターン化ドープ層(12)を設けることは、無地のドープ層(11)を設けることと、レーザアブレーションによって層のパターニングを行うこととを含む請求項1〜4のいずれかに記載の方法。
- IBC太陽電池セルを製造するために使用され、
第1ドープ領域(22)および第2ドープ領域(13)は、半導体基板の後側に交差指型パターンを形成する請求項1〜5のいずれかに記載の方法。 - 第1ドープ領域(22)は、裏面電界領域であり、
第2ドープ領域(13)は、エミッタ領域である請求項6記載の方法。 - 第1ドープ領域(22)は、エミッタ領域であり、
第2ドープ領域(13)は、裏面電界領域である請求項6記載の方法。 - 第2ドープ領域を選択的に成長する前に、基板と同じドーピング型を有するドープ層を半導体基板の表面に設けることをさらに含む請求項6〜8のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161515788P | 2011-08-05 | 2011-08-05 | |
US61/515,788 | 2011-08-05 | ||
PCT/EP2012/065014 WO2013020868A1 (en) | 2011-08-05 | 2012-08-01 | Method for forming patterns of differently doped regions |
Publications (2)
Publication Number | Publication Date |
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JP2014527297A JP2014527297A (ja) | 2014-10-09 |
JP6006796B2 true JP6006796B2 (ja) | 2016-10-12 |
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JP2014523314A Expired - Fee Related JP6006796B2 (ja) | 2011-08-05 | 2012-08-01 | 異なってドープされた領域のパターンの形成方法 |
Country Status (5)
Country | Link |
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US (1) | US9496430B2 (ja) |
EP (1) | EP2740149B1 (ja) |
JP (1) | JP6006796B2 (ja) |
TW (1) | TWI542028B (ja) |
WO (1) | WO2013020868A1 (ja) |
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JP6006796B2 (ja) | 2011-08-05 | 2016-10-12 | アイメックImec | 異なってドープされた領域のパターンの形成方法 |
TWI492410B (zh) * | 2013-03-28 | 2015-07-11 | Motech Ind Inc | 半導體裝置及其製造方法 |
CN104282771B (zh) * | 2013-07-09 | 2017-04-12 | 英稳达科技股份有限公司 | 背面接触型太阳能电池 |
EP2993699B1 (en) * | 2014-09-04 | 2018-03-21 | IMEC vzw | Method for fabricating crystalline photovoltaic cells |
CN105529251A (zh) * | 2014-09-30 | 2016-04-27 | 上海晶玺电子科技有限公司 | 掺杂方法 |
NL2013608B1 (en) | 2014-10-10 | 2016-10-04 | Univ Delft Tech | Self aligned low temperature process for solar cells. |
CN110100317B (zh) * | 2016-12-13 | 2022-09-30 | 信越化学工业株式会社 | 高效背面接触型太阳能电池单元、太阳能电池组件和光伏发电系统 |
WO2022087677A1 (en) * | 2020-10-29 | 2022-05-05 | Newsouth Innovations Pty Limited | A solar cell structure and a method of forming a solar cell structure |
DE102020132245A1 (de) | 2020-12-04 | 2022-06-09 | EnPV GmbH | Rückseitenkontaktierte Solarzelle und Herstellung einer solchen |
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US4868633A (en) * | 1986-10-22 | 1989-09-19 | Texas Instruments Incorporated | Selective epitaxy devices and method |
JPH01230270A (ja) * | 1988-03-10 | 1989-09-13 | Oki Electric Ind Co Ltd | バイポーラ型トランジスタ及びその製造方法 |
JP2006237181A (ja) * | 2005-02-24 | 2006-09-07 | Canon Inc | 半導体基板及び太陽電池の製造方法 |
CN102420271B (zh) * | 2005-12-21 | 2016-07-06 | 太阳能公司 | 背面触点太阳能电池及制造方法 |
EP2324509A2 (en) * | 2008-08-27 | 2011-05-25 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
EP2329530A4 (en) * | 2008-08-27 | 2013-03-20 | Applied Materials Inc | PHOTOPIL MODULES WITH REAR CONTACTS |
US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
JP5274277B2 (ja) * | 2009-01-27 | 2013-08-28 | 京セラ株式会社 | 太陽電池素子の製造方法 |
JP2010177655A (ja) * | 2009-01-27 | 2010-08-12 | Fumimasa Yo | 裏面接合型太陽電池の製造方法 |
WO2011017339A2 (en) * | 2009-08-06 | 2011-02-10 | Applied Materials, Inc. | Methods of selectively depositing an epitaxial layer |
US8652916B2 (en) * | 2011-02-11 | 2014-02-18 | International Business Machines Corporation | Self aligned impact-ionization MOS (I-MOS) device and methods of manufacture |
JP6006796B2 (ja) | 2011-08-05 | 2016-10-12 | アイメックImec | 異なってドープされた領域のパターンの形成方法 |
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- 2012-08-01 JP JP2014523314A patent/JP6006796B2/ja not_active Expired - Fee Related
- 2012-08-01 TW TW101127859A patent/TWI542028B/zh not_active IP Right Cessation
- 2012-08-01 EP EP12750718.4A patent/EP2740149B1/en active Active
- 2012-08-01 WO PCT/EP2012/065014 patent/WO2013020868A1/en unknown
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- 2014-02-04 US US14/172,697 patent/US9496430B2/en active Active
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TW201310689A (zh) | 2013-03-01 |
WO2013020868A1 (en) | 2013-02-14 |
US9496430B2 (en) | 2016-11-15 |
US20140179054A1 (en) | 2014-06-26 |
EP2740149B1 (en) | 2020-05-20 |
TWI542028B (zh) | 2016-07-11 |
JP2014527297A (ja) | 2014-10-09 |
EP2740149A1 (en) | 2014-06-11 |
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