JP3999820B2 - 選択性拡散領域を有する光電池の製造方法 - Google Patents

選択性拡散領域を有する光電池の製造方法 Download PDF

Info

Publication number
JP3999820B2
JP3999820B2 JP52840198A JP52840198A JP3999820B2 JP 3999820 B2 JP3999820 B2 JP 3999820B2 JP 52840198 A JP52840198 A JP 52840198A JP 52840198 A JP52840198 A JP 52840198A JP 3999820 B2 JP3999820 B2 JP 3999820B2
Authority
JP
Japan
Prior art keywords
substrate
region
manufacturing
dopant
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP52840198A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002503390A (ja
JP2002503390A5 (enExample
Inventor
ホルツェル，イェルク
ホノレ，ミア
ネイス，ヨハン
シルフツィック，ユゼフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of JP2002503390A publication Critical patent/JP2002503390A/ja
Publication of JP2002503390A5 publication Critical patent/JP2002503390A5/ja
Application granted granted Critical
Publication of JP3999820B2 publication Critical patent/JP3999820B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
JP52840198A 1996-12-24 1997-12-22 選択性拡散領域を有する光電池の製造方法 Expired - Lifetime JP3999820B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP96120865A EP0851511A1 (en) 1996-12-24 1996-12-24 Semiconductor device with two selectively diffused regions
EP96120865.9 1996-12-24
PCT/EP1997/007246 WO1998028798A1 (en) 1996-12-24 1997-12-22 Semiconductor device with selectively diffused regions

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007139083A Division JP2007235174A (ja) 1996-12-24 2007-05-25 選択性拡散領域を有する光電池

Publications (3)

Publication Number Publication Date
JP2002503390A JP2002503390A (ja) 2002-01-29
JP2002503390A5 JP2002503390A5 (enExample) 2005-09-08
JP3999820B2 true JP3999820B2 (ja) 2007-10-31

Family

ID=8223558

Family Applications (2)

Application Number Title Priority Date Filing Date
JP52840198A Expired - Lifetime JP3999820B2 (ja) 1996-12-24 1997-12-22 選択性拡散領域を有する光電池の製造方法
JP2007139083A Pending JP2007235174A (ja) 1996-12-24 2007-05-25 選択性拡散領域を有する光電池

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007139083A Pending JP2007235174A (ja) 1996-12-24 2007-05-25 選択性拡散領域を有する光電池

Country Status (10)

Country Link
EP (2) EP0851511A1 (enExample)
JP (2) JP3999820B2 (enExample)
CN (1) CN1155104C (enExample)
AT (1) ATE281698T1 (enExample)
AU (1) AU741153B2 (enExample)
CA (1) CA2276008C (enExample)
DE (1) DE69731485T2 (enExample)
DK (1) DK0960443T3 (enExample)
ES (1) ES2232887T3 (enExample)
WO (1) WO1998028798A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
EP1024523A1 (en) * 1999-01-27 2000-08-02 Imec (Interuniversity Microelectronics Center) VZW Method for fabricating thin film semiconductor devices
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
KR100420030B1 (ko) * 2001-04-23 2004-02-25 삼성에스디아이 주식회사 태양 전지의 제조 방법
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
EP1378947A1 (en) 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates
JP4121928B2 (ja) 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
US7799371B2 (en) 2005-11-17 2010-09-21 Palo Alto Research Center Incorporated Extruding/dispensing multiple materials to form high-aspect ratio extruded structures
AU2006317517A1 (en) 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited High efficiency solar cell fabrication
JP5126795B2 (ja) * 2005-12-21 2013-01-23 サンパワー コーポレイション 裏面電極型太陽電池構造及びその製造プロセス
US7928015B2 (en) * 2006-12-12 2011-04-19 Palo Alto Research Center Incorporated Solar cell fabrication using extruded dopant-bearing materials
WO2008103293A1 (en) * 2007-02-16 2008-08-28 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
JP5374504B2 (ja) * 2007-07-18 2013-12-25 アイメック エミッタ構造の作製方法とその結果のエミッタ構造
ES2505322T3 (es) 2007-07-26 2014-10-09 Universität Konstanz Método para producir una célula solar de silicio con un emisor decapado por grabado así como una célula solar correspondiente
DE102007035068A1 (de) * 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle
JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US8293568B2 (en) * 2008-07-28 2012-10-23 Day4 Energy Inc. Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process
JP5344872B2 (ja) * 2008-08-27 2013-11-20 三菱電機株式会社 光起電力装置
US7999175B2 (en) 2008-09-09 2011-08-16 Palo Alto Research Center Incorporated Interdigitated back contact silicon solar cells with laser ablated grooves
JP5029921B2 (ja) * 2009-01-19 2012-09-19 シャープ株式会社 太陽電池セルの製造方法
DE102009018653B4 (de) * 2009-03-04 2015-12-03 SolarWorld Industries Thüringen GmbH Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken
DE102009041546A1 (de) * 2009-03-27 2010-10-14 Bosch Solar Energy Ag Verfahren zur Herstellung von Solarzellen mit selektivem Emitter
KR101597825B1 (ko) * 2009-07-24 2016-02-25 엘지전자 주식회사 태양전지, 태양전지의 제조방법 및 열확산용 열처리 장치
NL2003324C2 (en) * 2009-07-31 2011-02-02 Otb Solar Bv Photovoltaic cell with a selective emitter and method for making the same.
KR101611456B1 (ko) * 2009-09-02 2016-04-11 엘지이노텍 주식회사 인계 분산제를 포함하는 전극 형성용 페이스트 조성물
US8735234B2 (en) * 2010-02-18 2014-05-27 Varian Semiconductor Equipment Associates, Inc. Self-aligned ion implantation for IBC solar cells
WO2011110231A1 (en) * 2010-03-12 2011-09-15 Q-Cells Se Method and in-line production system for the production of solar cells
KR101046219B1 (ko) * 2010-04-02 2011-07-04 엘지전자 주식회사 선택적 에미터를 갖는 태양전지
JP5734734B2 (ja) * 2010-05-18 2015-06-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体上に電流トラックを形成する方法
CN101866971A (zh) * 2010-05-18 2010-10-20 常州亿晶光电科技有限公司 具有选择性发射级太阳能电池片
CN101866984B (zh) * 2010-05-18 2015-01-07 常州亿晶光电科技有限公司 对晶体硅电池片表面选择性掺杂制发射级的方法
DE102010024308A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle
JP5538103B2 (ja) * 2010-07-07 2014-07-02 三菱電機株式会社 太陽電池セルの製造方法
US20110139231A1 (en) * 2010-08-25 2011-06-16 Daniel Meier Back junction solar cell with selective front surface field
KR101733055B1 (ko) * 2010-09-06 2017-05-24 엘지전자 주식회사 태양 전지 모듈
CN102468364A (zh) * 2010-11-05 2012-05-23 无锡尚德太阳能电力有限公司 一种选择性发射极太阳电池及其制作方法
JP4978759B1 (ja) * 2010-11-17 2012-07-18 日立化成工業株式会社 太陽電池の製造方法
CN102110721A (zh) * 2010-12-17 2011-06-29 福建省上杭县九洲硅业有限公司 晶体硅太阳能电池的梯度型背表面场及其制备方法
CN102082210A (zh) * 2010-12-18 2011-06-01 广东爱康太阳能科技有限公司 制造细栅选择性发射极晶硅太阳电池的方法
KR101198438B1 (ko) 2010-12-31 2012-11-06 현대중공업 주식회사 양면 수광형 국부화 에미터 태양전지 및 그 제조 방법
KR101114198B1 (ko) 2010-12-31 2012-03-13 현대중공업 주식회사 국부화 에미터 태양전지 및 그 제조 방법
DE102011002748A1 (de) 2011-01-17 2012-07-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Silizium-Solarzelle
US8962424B2 (en) 2011-03-03 2015-02-24 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
KR101071546B1 (ko) 2011-04-26 2011-10-10 주식회사 톱텍 태양전지 제조방법 및 이를 통해 제조된 태양전지
DE102011051040A1 (de) * 2011-06-14 2012-12-20 Solarworld Innovations Gmbh Verfahren zum Herstellen einer Solarzelle und Verfahren zum Herstellen einer Metallisierungsstruktur
CN102306684B (zh) * 2011-09-19 2016-01-20 苏州旭环光伏科技有限公司 一种三级掺杂水平的选择性发射极及其制备方法
TWI424584B (zh) * 2011-11-30 2014-01-21 Au Optronics Corp 製作太陽能電池之方法
US20130199604A1 (en) * 2012-02-06 2013-08-08 Silicon Solar Solutions Solar cells and methods of fabrication thereof
US8895325B2 (en) * 2012-04-27 2014-11-25 Varian Semiconductor Equipment Associates, Inc. System and method for aligning substrates for multiple implants
KR102039611B1 (ko) * 2012-05-22 2019-11-01 주성엔지니어링(주) 기판형 태양 전지 및 그의 제조 방법, 기판형 태양 전지의 도핑 방법 및 장치
CN102856436A (zh) * 2012-09-05 2013-01-02 友达光电股份有限公司 太阳能电池及其制作方法
JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
US9960287B2 (en) 2014-02-11 2018-05-01 Picasolar, Inc. Solar cells and methods of fabrication thereof
JP6661891B2 (ja) * 2015-05-07 2020-03-11 日立化成株式会社 太陽電池素子の製造方法及び太陽電池素子
JP6270889B2 (ja) * 2016-03-16 2018-01-31 三菱電機株式会社 太陽電池の製造方法
KR102045989B1 (ko) 2018-03-14 2019-11-18 한국과학기술연구원 상호 확산을 사용한 반도체 소자 및 이를 제조하는 방법
WO2019206679A1 (en) 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Passivated layer stack for a light harvesting device
CN113675289B (zh) * 2021-10-22 2022-03-01 浙江晶科能源有限公司 光伏电池及其制备方法、光伏组件
CN116722056A (zh) * 2022-05-26 2023-09-08 浙江晶科能源有限公司 太阳能电池及太阳能电池的制备方法、光伏组件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2238251B1 (enExample) * 1973-07-03 1977-09-16 Telecommunications Sa
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
DE4401782C2 (de) * 1994-01-21 2001-08-02 Angew Solarenergie Ase Gmbh Verfahren zur Herstellung eines lokal flachen Emitters zwischen den Kontaktfingern einer Solarzelle
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法

Also Published As

Publication number Publication date
DK0960443T3 (da) 2005-03-14
CA2276008A1 (en) 1998-07-02
EP0960443B1 (en) 2004-11-03
CN1241298A (zh) 2000-01-12
AU5955598A (en) 1998-07-17
CN1155104C (zh) 2004-06-23
CA2276008C (en) 2005-03-22
AU741153B2 (en) 2001-11-22
DE69731485T2 (de) 2005-10-27
EP0960443A1 (en) 1999-12-01
JP2002503390A (ja) 2002-01-29
JP2007235174A (ja) 2007-09-13
EP0851511A1 (en) 1998-07-01
ATE281698T1 (de) 2004-11-15
ES2232887T3 (es) 2005-06-01
DE69731485D1 (de) 2004-12-09
WO1998028798A1 (en) 1998-07-02

Similar Documents

Publication Publication Date Title
JP3999820B2 (ja) 選択性拡散領域を有する光電池の製造方法
US6825104B2 (en) Semiconductor device with selectively diffused regions
KR101991767B1 (ko) 넓은 밴드갭 반도체 재료를 갖는 이미터 영역을 구비한 태양 전지
CA2181281C (en) Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
KR101436357B1 (ko) 선택적 전면 필드를 구비한 후면 접합 태양전지
US20050268963A1 (en) Process for manufacturing photovoltaic cells
US20100193016A1 (en) Photovoltaic Cell and Production Thereof
US20070295399A1 (en) Back-Contact Photovoltaic Cells
US20050189013A1 (en) Process for manufacturing photovoltaic cells
US20100190286A1 (en) Method for manufacturing solar cell
EP2581950A2 (en) Method of manufacturing a photoelectric device
US8669169B2 (en) Diffusion sources from liquid precursors
AU2005213444A1 (en) Back-contact solar cells and methods for fabrication
EP2662898B1 (en) Solar cell and method for manufacturing the same
KR101370126B1 (ko) 탑햇 형태의 레이저 어닐링을 이용한 태양전지의 선택적에미터 형성방법 및 이를 이용한 태양전지의 제조방법
KR102674774B1 (ko) 고광전변환효율 태양전지 및 고광전변환효율 태양전지의 제조 방법
JPH06252428A (ja) 光電変換素子の製造方法
Tucci et al. CF4/O2 dry etching of textured crystalline silicon surface in a-Si: H/c-Si heterojunction for photovoltaic applications
KR100537439B1 (ko) 고준위/저준위 일괄 도핑처리 태양전지 제조방법 및 이에 사용되는 광학계
CN119562652A (zh) 一种太阳电池及其制备方法、光伏组件
TW201324831A (zh) 太陽能電池製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041221

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060704

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20061004

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20061120

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070104

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070525

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20070719

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070731

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070810

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100817

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100817

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110817

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120817

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130817

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term