CN1155104C - 制造具有可选择扩散区域的半导体器件的方法以及所制成的伏打器件 - Google Patents

制造具有可选择扩散区域的半导体器件的方法以及所制成的伏打器件 Download PDF

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Publication number
CN1155104C
CN1155104C CNB971808910A CN97180891A CN1155104C CN 1155104 C CN1155104 C CN 1155104C CN B971808910 A CNB971808910 A CN B971808910A CN 97180891 A CN97180891 A CN 97180891A CN 1155104 C CN1155104 C CN 1155104C
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China
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substrate
solid
region
impurity
diffusion
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Expired - Lifetime
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CNB971808910A
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Chinese (zh)
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CN1241298A (zh
Inventor
J
J·霍尔泽尔
M·奥诺尔
J·尼基斯
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J·什勒夫奇克
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Imec Corp
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Thyristors (AREA)
CNB971808910A 1996-12-24 1997-12-22 制造具有可选择扩散区域的半导体器件的方法以及所制成的伏打器件 Expired - Lifetime CN1155104C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP96120865A EP0851511A1 (en) 1996-12-24 1996-12-24 Semiconductor device with two selectively diffused regions
EP96120865.9 1996-12-24

Publications (2)

Publication Number Publication Date
CN1241298A CN1241298A (zh) 2000-01-12
CN1155104C true CN1155104C (zh) 2004-06-23

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CNB971808910A Expired - Lifetime CN1155104C (zh) 1996-12-24 1997-12-22 制造具有可选择扩散区域的半导体器件的方法以及所制成的伏打器件

Country Status (10)

Country Link
EP (2) EP0851511A1 (enExample)
JP (2) JP3999820B2 (enExample)
CN (1) CN1155104C (enExample)
AT (1) ATE281698T1 (enExample)
AU (1) AU741153B2 (enExample)
CA (1) CA2276008C (enExample)
DE (1) DE69731485T2 (enExample)
DK (1) DK0960443T3 (enExample)
ES (1) ES2232887T3 (enExample)
WO (1) WO1998028798A1 (enExample)

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JP5734734B2 (ja) * 2010-05-18 2015-06-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体上に電流トラックを形成する方法
CN101866971A (zh) * 2010-05-18 2010-10-20 常州亿晶光电科技有限公司 具有选择性发射级太阳能电池片
CN101866984B (zh) * 2010-05-18 2015-01-07 常州亿晶光电科技有限公司 对晶体硅电池片表面选择性掺杂制发射级的方法
DE102010024308A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle
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CN102110721A (zh) * 2010-12-17 2011-06-29 福建省上杭县九洲硅业有限公司 晶体硅太阳能电池的梯度型背表面场及其制备方法
CN102082210A (zh) * 2010-12-18 2011-06-01 广东爱康太阳能科技有限公司 制造细栅选择性发射极晶硅太阳电池的方法
KR101198438B1 (ko) 2010-12-31 2012-11-06 현대중공업 주식회사 양면 수광형 국부화 에미터 태양전지 및 그 제조 방법
KR101114198B1 (ko) 2010-12-31 2012-03-13 현대중공업 주식회사 국부화 에미터 태양전지 및 그 제조 방법
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JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
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Also Published As

Publication number Publication date
DK0960443T3 (da) 2005-03-14
CA2276008A1 (en) 1998-07-02
EP0960443B1 (en) 2004-11-03
CN1241298A (zh) 2000-01-12
AU5955598A (en) 1998-07-17
CA2276008C (en) 2005-03-22
AU741153B2 (en) 2001-11-22
DE69731485T2 (de) 2005-10-27
EP0960443A1 (en) 1999-12-01
JP2002503390A (ja) 2002-01-29
JP2007235174A (ja) 2007-09-13
EP0851511A1 (en) 1998-07-01
ATE281698T1 (de) 2004-11-15
ES2232887T3 (es) 2005-06-01
JP3999820B2 (ja) 2007-10-31
DE69731485D1 (de) 2004-12-09
WO1998028798A1 (en) 1998-07-02

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