JP2002503390A5 - - Google Patents

Download PDF

Info

Publication number
JP2002503390A5
JP2002503390A5 JP1998528401A JP52840198A JP2002503390A5 JP 2002503390 A5 JP2002503390 A5 JP 2002503390A5 JP 1998528401 A JP1998528401 A JP 1998528401A JP 52840198 A JP52840198 A JP 52840198A JP 2002503390 A5 JP2002503390 A5 JP 2002503390A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998528401A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002503390A (ja
JP3999820B2 (ja
Filing date
Publication date
Priority claimed from EP96120865A external-priority patent/EP0851511A1/en
Application filed filed Critical
Publication of JP2002503390A publication Critical patent/JP2002503390A/ja
Publication of JP2002503390A5 publication Critical patent/JP2002503390A5/ja
Application granted granted Critical
Publication of JP3999820B2 publication Critical patent/JP3999820B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP52840198A 1996-12-24 1997-12-22 選択性拡散領域を有する光電池の製造方法 Expired - Lifetime JP3999820B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP96120865A EP0851511A1 (en) 1996-12-24 1996-12-24 Semiconductor device with two selectively diffused regions
EP96120865.9 1996-12-24
PCT/EP1997/007246 WO1998028798A1 (en) 1996-12-24 1997-12-22 Semiconductor device with selectively diffused regions

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007139083A Division JP2007235174A (ja) 1996-12-24 2007-05-25 選択性拡散領域を有する光電池

Publications (3)

Publication Number Publication Date
JP2002503390A JP2002503390A (ja) 2002-01-29
JP2002503390A5 true JP2002503390A5 (enExample) 2005-09-08
JP3999820B2 JP3999820B2 (ja) 2007-10-31

Family

ID=8223558

Family Applications (2)

Application Number Title Priority Date Filing Date
JP52840198A Expired - Lifetime JP3999820B2 (ja) 1996-12-24 1997-12-22 選択性拡散領域を有する光電池の製造方法
JP2007139083A Pending JP2007235174A (ja) 1996-12-24 2007-05-25 選択性拡散領域を有する光電池

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007139083A Pending JP2007235174A (ja) 1996-12-24 2007-05-25 選択性拡散領域を有する光電池

Country Status (10)

Country Link
EP (2) EP0851511A1 (enExample)
JP (2) JP3999820B2 (enExample)
CN (1) CN1155104C (enExample)
AT (1) ATE281698T1 (enExample)
AU (1) AU741153B2 (enExample)
CA (1) CA2276008C (enExample)
DE (1) DE69731485T2 (enExample)
DK (1) DK0960443T3 (enExample)
ES (1) ES2232887T3 (enExample)
WO (1) WO1998028798A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
EP1024523A1 (en) * 1999-01-27 2000-08-02 Imec (Interuniversity Microelectronics Center) VZW Method for fabricating thin film semiconductor devices
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
KR100420030B1 (ko) * 2001-04-23 2004-02-25 삼성에스디아이 주식회사 태양 전지의 제조 방법
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
EP1378947A1 (en) 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates
JP4121928B2 (ja) 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
US7799371B2 (en) 2005-11-17 2010-09-21 Palo Alto Research Center Incorporated Extruding/dispensing multiple materials to form high-aspect ratio extruded structures
AU2006317517A1 (en) 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited High efficiency solar cell fabrication
JP5126795B2 (ja) * 2005-12-21 2013-01-23 サンパワー コーポレイション 裏面電極型太陽電池構造及びその製造プロセス
US7928015B2 (en) * 2006-12-12 2011-04-19 Palo Alto Research Center Incorporated Solar cell fabrication using extruded dopant-bearing materials
WO2008103293A1 (en) * 2007-02-16 2008-08-28 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
JP5374504B2 (ja) * 2007-07-18 2013-12-25 アイメック エミッタ構造の作製方法とその結果のエミッタ構造
ES2505322T3 (es) 2007-07-26 2014-10-09 Universität Konstanz Método para producir una célula solar de silicio con un emisor decapado por grabado así como una célula solar correspondiente
DE102007035068A1 (de) * 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle
JP5236914B2 (ja) * 2007-09-19 2013-07-17 シャープ株式会社 太陽電池の製造方法
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US8293568B2 (en) * 2008-07-28 2012-10-23 Day4 Energy Inc. Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process
JP5344872B2 (ja) * 2008-08-27 2013-11-20 三菱電機株式会社 光起電力装置
US7999175B2 (en) 2008-09-09 2011-08-16 Palo Alto Research Center Incorporated Interdigitated back contact silicon solar cells with laser ablated grooves
JP5029921B2 (ja) * 2009-01-19 2012-09-19 シャープ株式会社 太陽電池セルの製造方法
DE102009018653B4 (de) * 2009-03-04 2015-12-03 SolarWorld Industries Thüringen GmbH Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken
DE102009041546A1 (de) * 2009-03-27 2010-10-14 Bosch Solar Energy Ag Verfahren zur Herstellung von Solarzellen mit selektivem Emitter
KR101597825B1 (ko) * 2009-07-24 2016-02-25 엘지전자 주식회사 태양전지, 태양전지의 제조방법 및 열확산용 열처리 장치
NL2003324C2 (en) * 2009-07-31 2011-02-02 Otb Solar Bv Photovoltaic cell with a selective emitter and method for making the same.
KR101611456B1 (ko) * 2009-09-02 2016-04-11 엘지이노텍 주식회사 인계 분산제를 포함하는 전극 형성용 페이스트 조성물
US8735234B2 (en) * 2010-02-18 2014-05-27 Varian Semiconductor Equipment Associates, Inc. Self-aligned ion implantation for IBC solar cells
WO2011110231A1 (en) * 2010-03-12 2011-09-15 Q-Cells Se Method and in-line production system for the production of solar cells
KR101046219B1 (ko) * 2010-04-02 2011-07-04 엘지전자 주식회사 선택적 에미터를 갖는 태양전지
JP5734734B2 (ja) * 2010-05-18 2015-06-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 半導体上に電流トラックを形成する方法
CN101866971A (zh) * 2010-05-18 2010-10-20 常州亿晶光电科技有限公司 具有选择性发射级太阳能电池片
CN101866984B (zh) * 2010-05-18 2015-01-07 常州亿晶光电科技有限公司 对晶体硅电池片表面选择性掺杂制发射级的方法
DE102010024308A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung einer selektiven Dotierstruktur in einem Halbleitersubstrat zur Herstellung einer photovoltaischen Solarzelle
JP5538103B2 (ja) * 2010-07-07 2014-07-02 三菱電機株式会社 太陽電池セルの製造方法
US20110139231A1 (en) * 2010-08-25 2011-06-16 Daniel Meier Back junction solar cell with selective front surface field
KR101733055B1 (ko) * 2010-09-06 2017-05-24 엘지전자 주식회사 태양 전지 모듈
CN102468364A (zh) * 2010-11-05 2012-05-23 无锡尚德太阳能电力有限公司 一种选择性发射极太阳电池及其制作方法
JP4978759B1 (ja) * 2010-11-17 2012-07-18 日立化成工業株式会社 太陽電池の製造方法
CN102110721A (zh) * 2010-12-17 2011-06-29 福建省上杭县九洲硅业有限公司 晶体硅太阳能电池的梯度型背表面场及其制备方法
CN102082210A (zh) * 2010-12-18 2011-06-01 广东爱康太阳能科技有限公司 制造细栅选择性发射极晶硅太阳电池的方法
KR101198438B1 (ko) 2010-12-31 2012-11-06 현대중공업 주식회사 양면 수광형 국부화 에미터 태양전지 및 그 제조 방법
KR101114198B1 (ko) 2010-12-31 2012-03-13 현대중공업 주식회사 국부화 에미터 태양전지 및 그 제조 방법
DE102011002748A1 (de) 2011-01-17 2012-07-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Silizium-Solarzelle
US8962424B2 (en) 2011-03-03 2015-02-24 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
KR101071546B1 (ko) 2011-04-26 2011-10-10 주식회사 톱텍 태양전지 제조방법 및 이를 통해 제조된 태양전지
DE102011051040A1 (de) * 2011-06-14 2012-12-20 Solarworld Innovations Gmbh Verfahren zum Herstellen einer Solarzelle und Verfahren zum Herstellen einer Metallisierungsstruktur
CN102306684B (zh) * 2011-09-19 2016-01-20 苏州旭环光伏科技有限公司 一种三级掺杂水平的选择性发射极及其制备方法
TWI424584B (zh) * 2011-11-30 2014-01-21 Au Optronics Corp 製作太陽能電池之方法
US20130199604A1 (en) * 2012-02-06 2013-08-08 Silicon Solar Solutions Solar cells and methods of fabrication thereof
US8895325B2 (en) * 2012-04-27 2014-11-25 Varian Semiconductor Equipment Associates, Inc. System and method for aligning substrates for multiple implants
KR102039611B1 (ko) * 2012-05-22 2019-11-01 주성엔지니어링(주) 기판형 태양 전지 및 그의 제조 방법, 기판형 태양 전지의 도핑 방법 및 장치
CN102856436A (zh) * 2012-09-05 2013-01-02 友达光电股份有限公司 太阳能电池及其制作方法
JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 p型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
US9960287B2 (en) 2014-02-11 2018-05-01 Picasolar, Inc. Solar cells and methods of fabrication thereof
JP6661891B2 (ja) * 2015-05-07 2020-03-11 日立化成株式会社 太陽電池素子の製造方法及び太陽電池素子
JP6270889B2 (ja) * 2016-03-16 2018-01-31 三菱電機株式会社 太陽電池の製造方法
KR102045989B1 (ko) 2018-03-14 2019-11-18 한국과학기술연구원 상호 확산을 사용한 반도체 소자 및 이를 제조하는 방법
WO2019206679A1 (en) 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Passivated layer stack for a light harvesting device
CN113675289B (zh) * 2021-10-22 2022-03-01 浙江晶科能源有限公司 光伏电池及其制备方法、光伏组件
CN116722056A (zh) * 2022-05-26 2023-09-08 浙江晶科能源有限公司 太阳能电池及太阳能电池的制备方法、光伏组件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2238251B1 (enExample) * 1973-07-03 1977-09-16 Telecommunications Sa
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
DE4401782C2 (de) * 1994-01-21 2001-08-02 Angew Solarenergie Ase Gmbh Verfahren zur Herstellung eines lokal flachen Emitters zwischen den Kontaktfingern einer Solarzelle
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法

Similar Documents

Publication Publication Date Title
JP2000502280A5 (enExample)
JP2000501771A5 (enExample)
JP2000501599A5 (enExample)
JP2000501018A5 (enExample)
JP2000500076A5 (enExample)
JP2000501324A5 (enExample)
JP2000500055A5 (enExample)
JP2000502472A5 (enExample)
JP2000501338A5 (enExample)
JP2000501825A5 (enExample)
JP2002503390A5 (enExample)
JP2000500874A5 (enExample)
JP2000502425A5 (enExample)
JP2000502485A5 (enExample)
JP2000502568A5 (enExample)
JP2000501774A5 (enExample)
JP2000500912A5 (enExample)
JP2000502570A5 (enExample)
JP2000501876A5 (enExample)
JP2000501744A5 (enExample)
JP2000501229A5 (enExample)
JP2000500857A5 (enExample)
JP2000502316A5 (enExample)
JP2000502714A5 (enExample)
JP2000501569A5 (enExample)