PL2165371T3 - Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem - Google Patents

Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem

Info

Publication number
PL2165371T3
PL2165371T3 PL08786243T PL08786243T PL2165371T3 PL 2165371 T3 PL2165371 T3 PL 2165371T3 PL 08786243 T PL08786243 T PL 08786243T PL 08786243 T PL08786243 T PL 08786243T PL 2165371 T3 PL2165371 T3 PL 2165371T3
Authority
PL
Poland
Prior art keywords
emitter
resulting therefrom
producing
structures resulting
emitter region
Prior art date
Application number
PL08786243T
Other languages
English (en)
Inventor
Nieuwenhuysen Kris Van
Filip Duerinckx
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Publication of PL2165371T3 publication Critical patent/PL2165371T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Drying Of Semiconductors (AREA)
PL08786243T 2007-07-18 2008-07-18 Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem PL2165371T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US95053107P 2007-07-18 2007-07-18
PCT/EP2008/059463 WO2009010585A2 (en) 2007-07-18 2008-07-18 Method for producing an emitter structure and emitter structures resulting therefrom
EP08786243A EP2165371B1 (en) 2007-07-18 2008-07-18 Method for producing an emitter structure and emitter structures resulting therefrom

Publications (1)

Publication Number Publication Date
PL2165371T3 true PL2165371T3 (pl) 2012-08-31

Family

ID=40260135

Family Applications (1)

Application Number Title Priority Date Filing Date
PL08786243T PL2165371T3 (pl) 2007-07-18 2008-07-18 Sposób wytwarzania struktur emitera i struktury emitera wytwarzane tym sposobem

Country Status (8)

Country Link
US (1) US9087957B2 (pl)
EP (1) EP2165371B1 (pl)
JP (1) JP5374504B2 (pl)
KR (1) KR20100032900A (pl)
AT (1) ATE547812T1 (pl)
ES (1) ES2382924T3 (pl)
PL (1) PL2165371T3 (pl)
WO (1) WO2009010585A2 (pl)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8815104B2 (en) 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
WO2009137241A2 (en) 2008-04-14 2009-11-12 Bandgap Engineering, Inc. Process for fabricating nanowire arrays
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8283557B2 (en) * 2009-03-10 2012-10-09 Silevo, Inc. Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
KR101145928B1 (ko) * 2009-03-11 2012-05-15 엘지전자 주식회사 태양 전지 및 태양 전지의 제조 방법
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
US20110030778A1 (en) * 2009-08-06 2011-02-10 Energy Focus, Inc. Method of Passivating and Reducing Reflectance of a Photovoltaic Cell
DE202010018510U1 (de) 2009-09-07 2017-03-15 Lg Electronics Inc. Solarzelle
US8586862B2 (en) 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
EP2502278A2 (en) * 2009-11-18 2012-09-26 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
WO2011072153A2 (en) * 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers
KR101579320B1 (ko) * 2010-05-12 2015-12-21 엘지전자 주식회사 태양 전지
KR101141578B1 (ko) * 2010-09-14 2012-05-17 (주)세미머티리얼즈 태양전지 제조방법.
CA2815764A1 (en) 2011-03-08 2012-09-13 Alliance For Sustainable Energy, Llc Efficient black silicon photovoltaic devices with enhanced blue response
US20120312361A1 (en) * 2011-06-08 2012-12-13 International Business Machines Corporation Emitter structure and fabrication method for silicon heterojunction solar cell
CN102243999A (zh) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 半导体器件制备过程中氮化硅层的制备方法
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
KR101860919B1 (ko) 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9190549B2 (en) * 2012-02-28 2015-11-17 International Business Machines Corporation Solar cell made using a barrier layer between p-type and intrinsic layers
US9178098B2 (en) * 2012-02-29 2015-11-03 The Boeing Company Solar cell with delta doping layer
JP5546616B2 (ja) * 2012-05-14 2014-07-09 セリーボ， インコーポレイテッド トンネル酸化物を有する後面接合太陽電池
DE102013219603A1 (de) * 2013-09-27 2015-04-02 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle
JP6350858B2 (ja) * 2014-05-26 2018-07-04 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び太陽電池
JP5830147B1 (ja) * 2014-09-04 2015-12-09 信越化学工業株式会社 太陽電池及び太陽電池の製造方法
US9520507B2 (en) * 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
KR101976421B1 (ko) * 2016-12-28 2019-05-09 엘지전자 주식회사 태양전지 제조방법
EP4287267A1 (en) * 2022-06-01 2023-12-06 Jinko Solar (Haining) Co., Ltd. Photovoltaic cell and photovoltaic module

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582472A (en) * 1978-12-13 1980-06-21 Ibm Silicone solar energy converter
JPS6235680A (ja) * 1985-08-09 1987-02-16 Toa Nenryo Kogyo Kk アモルフアスシリコン太陽電池およびその製造法
JPS6358974A (ja) * 1986-08-29 1988-03-14 Sumitomo Electric Ind Ltd アモルフアス光起電力素子
JPH0752778B2 (ja) * 1987-09-14 1995-06-05 三洋電機株式会社 光起電力装置
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
JPH04245683A (ja) * 1991-01-31 1992-09-02 Tonen Corp 太陽電池の製造方法
JPH0595124A (ja) * 1991-10-02 1993-04-16 Sharp Corp 光電変換素子
JP2943126B2 (ja) * 1992-07-23 1999-08-30 キヤノン株式会社 太陽電池及びその製造方法
JPH06163954A (ja) * 1992-11-20 1994-06-10 Sanyo Electric Co Ltd 結晶系シリコン薄膜の形成方法及びこの膜を用いた光起電力装置
DE19522539C2 (de) * 1995-06-21 1997-06-12 Fraunhofer Ges Forschung Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
EP0851511A1 (en) * 1996-12-24 1998-07-01 IMEC vzw Semiconductor device with two selectively diffused regions
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JPH10303442A (ja) * 1997-02-28 1998-11-13 Kyocera Corp 半導体膜形成用基板及びそれを用いた半導体装置
US6150603A (en) * 1999-04-23 2000-11-21 Hughes Electronics Corporation Bilayer passivation structure for photovoltaic cells
JP2004327578A (ja) * 2003-04-23 2004-11-18 Hitachi Cable Ltd 結晶薄膜半導体装置およびその製造方法
JP4436770B2 (ja) * 2005-02-10 2010-03-24 三洋電機株式会社 光起電力装置
JP2006310368A (ja) * 2005-04-26 2006-11-09 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池
JP2007142471A (ja) * 2007-02-23 2007-06-07 Kyocera Corp 太陽電池の製造方法
US7846750B2 (en) * 2007-06-12 2010-12-07 Guardian Industries Corp. Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell

Also Published As

Publication number Publication date
US9087957B2 (en) 2015-07-21
WO2009010585A3 (en) 2009-05-28
EP2165371B1 (en) 2012-02-29
EP2165371A2 (en) 2010-03-24
KR20100032900A (ko) 2010-03-26
ATE547812T1 (de) 2012-03-15
WO2009010585A2 (en) 2009-01-22
JP5374504B2 (ja) 2013-12-25
US20100139763A1 (en) 2010-06-10
JP2010533969A (ja) 2010-10-28
ES2382924T3 (es) 2012-06-14

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