WO2011116762A3 - Herstellungsverfahren einer halbleitersolarzelle - Google Patents

Herstellungsverfahren einer halbleitersolarzelle Download PDF

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Publication number
WO2011116762A3
WO2011116762A3 PCT/DE2011/075032 DE2011075032W WO2011116762A3 WO 2011116762 A3 WO2011116762 A3 WO 2011116762A3 DE 2011075032 W DE2011075032 W DE 2011075032W WO 2011116762 A3 WO2011116762 A3 WO 2011116762A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
layer
producing
semiconductor substrate
passivation
Prior art date
Application number
PCT/DE2011/075032
Other languages
English (en)
French (fr)
Other versions
WO2011116762A2 (de
Inventor
Peter Engelhart
Robert Seguin
Matthias Erdmann
Original Assignee
Q-Cells Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Q-Cells Se filed Critical Q-Cells Se
Priority to DE112011100989T priority Critical patent/DE112011100989A5/de
Priority to CN201180014551.8A priority patent/CN102822987B/zh
Publication of WO2011116762A2 publication Critical patent/WO2011116762A2/de
Publication of WO2011116762A3 publication Critical patent/WO2011116762A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Die Erfindung betrifft ein Herstellungsverfahren einer Halbleitersolarzelle (1), umfassend die folgenden Verfahrensschritte: Bereitstellen eines Halbleitersubstrats (2) der Halbleitersolarzelle (1); Erzeugen einer Passivierungsdoppelschicht (3, 4) auf einer Oberfläche (22) des Hableitersubstrats (2), indem eine erste Dielektrikschicht (3) aus einem ersten Dielektrikmaterial auf die Oberfläche (22) des Hableitersubstrats (2) aufgebracht wird und auf die erste Dielektrikschicht (3) eine zweite Dielektrikschicht (4) aus einem vom ersten Dielektrikmaterial verschiedenen, zweiten Dielektrikmaterial aufgebracht wird; und einen weiteren Herstellungsschritt umfassend mindestens einen, zwei oder drei aus den folgenden Prozessschritten: ein Texturschritt; ein Diffusionsschritt; und ein Ätzschritt, wobei die Passivierungsdoppelschicht (3, 4) während des weiteren Herstellungsschrittes als Barriereschicht wirkt und das unmittelbar darunter liegende Halbleitersubstrat (2) schützt und wobei die Passivierungsdoppelschicht (3, 4) in der fertigen Halbleitersolarzelle (1) als Passivierungsschicht dient.
PCT/DE2011/075032 2010-03-24 2011-02-28 Herstellungsverfahren einer halbleitersolarzelle WO2011116762A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112011100989T DE112011100989A5 (de) 2010-03-24 2011-02-28 Herstellungsverfahren einer Halbleitersolarzelle
CN201180014551.8A CN102822987B (zh) 2010-03-24 2011-02-28 半导体太阳能电池的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010016122.5 2010-03-24
DE102010016122A DE102010016122A1 (de) 2010-03-24 2010-03-24 Herstellungsverfahren einer Halbleitersolarzelle

Publications (2)

Publication Number Publication Date
WO2011116762A2 WO2011116762A2 (de) 2011-09-29
WO2011116762A3 true WO2011116762A3 (de) 2012-07-05

Family

ID=44116195

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/075032 WO2011116762A2 (de) 2010-03-24 2011-02-28 Herstellungsverfahren einer halbleitersolarzelle

Country Status (3)

Country Link
CN (1) CN102822987B (de)
DE (2) DE102010016122A1 (de)
WO (1) WO2011116762A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20125988A (fi) * 2012-09-24 2014-03-25 Optitune Oy Menetelmä n-tyypin piisubstraatin modifioimiseksi
FI20125987A (fi) 2012-09-24 2014-03-25 Optitune Oy Menetelmä valosähköisessä laitteessa käytettävän piisubstraatin passivoimiseksi
FI20125989A (fi) * 2012-09-24 2014-03-25 Optitune Oy Menetelmä valosähköisen laitteen valmistamiseksi
DE102013219603A1 (de) * 2013-09-27 2015-04-02 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle
CN105914255A (zh) * 2016-04-19 2016-08-31 中利腾晖光伏科技有限公司 一种太阳能电池及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994879A (en) * 1988-11-25 1991-02-19 Agency Of Industrial Science & Technology Photoelectric transducer with light path of increased length
US20040112426A1 (en) * 2002-12-11 2004-06-17 Sharp Kabushiki Kaisha Solar cell and method of manufacturing the same
JP2008010746A (ja) * 2006-06-30 2008-01-17 Sharp Corp 太陽電池、および太陽電池の製造方法
US20080017243A1 (en) * 2006-07-24 2008-01-24 Denis De Ceuster Solar cell with reduced base diffusion area
DE102007054384A1 (de) * 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle
EP2339648A1 (de) * 2009-12-23 2011-06-29 Applied Materials, Inc. Verbesserte Passivierungsschicht für waferbasierte Solarzellen, Verfahren und System zu deren Herstellung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994879A (en) * 1988-11-25 1991-02-19 Agency Of Industrial Science & Technology Photoelectric transducer with light path of increased length
US20040112426A1 (en) * 2002-12-11 2004-06-17 Sharp Kabushiki Kaisha Solar cell and method of manufacturing the same
JP2008010746A (ja) * 2006-06-30 2008-01-17 Sharp Corp 太陽電池、および太陽電池の製造方法
US20080017243A1 (en) * 2006-07-24 2008-01-24 Denis De Ceuster Solar cell with reduced base diffusion area
DE102007054384A1 (de) * 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle
EP2339648A1 (de) * 2009-12-23 2011-06-29 Applied Materials, Inc. Verbesserte Passivierungsschicht für waferbasierte Solarzellen, Verfahren und System zu deren Herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ROBERT BOCK ET AL: "The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter", PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2009 34TH IEEE, IEEE, PISCATAWAY, NJ, USA, 7 June 2009 (2009-06-07), pages 30 - 35, XP031626933, ISBN: 978-1-4244-2949-3 *

Also Published As

Publication number Publication date
CN102822987B (zh) 2016-04-27
DE102010016122A1 (de) 2011-09-29
DE112011100989A5 (de) 2013-09-19
WO2011116762A2 (de) 2011-09-29
CN102822987A (zh) 2012-12-12

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