WO2010066626A3 - Verfahren zum ausbilden eines dotierstoffprofils - Google Patents

Verfahren zum ausbilden eines dotierstoffprofils Download PDF

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Publication number
WO2010066626A3
WO2010066626A3 PCT/EP2009/066291 EP2009066291W WO2010066626A3 WO 2010066626 A3 WO2010066626 A3 WO 2010066626A3 EP 2009066291 W EP2009066291 W EP 2009066291W WO 2010066626 A3 WO2010066626 A3 WO 2010066626A3
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WIPO (PCT)
Prior art keywords
dopant
profile
dopant profile
producing
order
Prior art date
Application number
PCT/EP2009/066291
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English (en)
French (fr)
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WO2010066626A2 (de
Inventor
Jörg Horzel
Dieter Franke
Gabriele Blendin
Marco Jahn
Wilfried Schmidt
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Schott Solar Ag
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Publication date
Application filed by Schott Solar Ag filed Critical Schott Solar Ag
Priority to US13/139,218 priority Critical patent/US9385263B2/en
Priority to CN200980156590.4A priority patent/CN102318086B/zh
Priority to EP09763962A priority patent/EP2374159A2/de
Priority to JP2011540024A priority patent/JP5677973B2/ja
Publication of WO2010066626A2 publication Critical patent/WO2010066626A2/de
Publication of WO2010066626A3 publication Critical patent/WO2010066626A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Die Erfindung bezieht sich auf ein Verfahren zum Ausbilden eines von einer Oberfläche eines waferförmigen Halbleiterbauelements (10) ausgehenden Dotierstoffprofils durch Einbringen von Dotierstoffatomen in das Halbleiterbauelement. Um kostengünstig Halbleiterbauelemente mit einem gewünschten Dotierstoff-Tiefenprofil herstellen zu können, wird vorgeschlagen, dass zunächst zur Ausbildung eines vorläufigen ersten Dotierstoffprofils auf oder in einem Bereich der Oberfläche eine Dotierstoff enthaltende Schicht ausgebildet wird und sodann mehrere eine entsprechende Schicht aufweisende Halbleiterbauelemente (10) aufeinanderliegend in Form eines Stapels (26) zur Ausbildung eines im Vergleich zu dem ersten Dotierstoffprofil eine größere Tiefe aufweisenden zweiten Dotierstoffprofils einer Wärmebehandlung ausgesetzt werden.
PCT/EP2009/066291 2008-12-12 2009-12-03 Verfahren zum ausbilden eines dotierstoffprofils WO2010066626A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/139,218 US9385263B2 (en) 2008-12-12 2009-12-03 Method for producing a dopant profile
CN200980156590.4A CN102318086B (zh) 2008-12-12 2009-12-03 用于构造掺杂分布图的方法
EP09763962A EP2374159A2 (de) 2008-12-12 2009-12-03 Verfahren zum ausbilden eines dotierstoffprofils
JP2011540024A JP5677973B2 (ja) 2008-12-12 2009-12-03 ドーパントプロファイルを形成するための方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008055515.0 2008-12-12
DE102008055515A DE102008055515A1 (de) 2008-12-12 2008-12-12 Verfahren zum Ausbilden eines Dotierstoffprofils

Publications (2)

Publication Number Publication Date
WO2010066626A2 WO2010066626A2 (de) 2010-06-17
WO2010066626A3 true WO2010066626A3 (de) 2010-12-16

Family

ID=41621284

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/066291 WO2010066626A2 (de) 2008-12-12 2009-12-03 Verfahren zum ausbilden eines dotierstoffprofils

Country Status (7)

Country Link
US (1) US9385263B2 (de)
EP (1) EP2374159A2 (de)
JP (1) JP5677973B2 (de)
CN (1) CN102318086B (de)
DE (1) DE102008055515A1 (de)
TW (1) TW201029056A (de)
WO (1) WO2010066626A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010004497A1 (de) * 2010-01-12 2011-07-14 centrotherm photovoltaics AG, 89143 Verfahren zur Erhöhung des Schichtwiderstands in einem dotierten Halbleiterbereich
US8334161B2 (en) * 2010-07-02 2012-12-18 Sunpower Corporation Method of fabricating a solar cell with a tunnel dielectric layer
EP2491577B1 (de) 2010-08-30 2014-10-15 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum ausbilden eines dotierstoffprofils
DE102010037321A1 (de) 2010-08-30 2012-03-01 Schott Solar Ag Verfahren zum Ausbilden eines Dotierstoffpfofils
DE102011051606B4 (de) 2011-07-06 2016-07-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Ausbilden eines Dotierstoffprofils
DE102011000973A1 (de) 2011-02-28 2012-08-30 Schott Solar Ag Verfahren zur flächigen Gasphasenbehandlng von Halbleiterbauelementen
DE202011051801U1 (de) 2011-10-28 2011-11-15 Schott Solar Ag Waferstapel-Transportträger
WO2013106621A1 (en) 2012-01-12 2013-07-18 First Solar, Inc Method and system of providing dopant concentration control in different layers of a semiconductor device
DE102012200559A1 (de) 2012-01-16 2013-07-18 Deutsche Cell Gmbh Verfahren zur Herstellung eines Emitters einer Solarzelle und Solarzelle
KR101890282B1 (ko) * 2012-08-06 2018-08-22 엘지전자 주식회사 선택적 에미터를 갖는 태양전지 및 이의 제조 방법
EP2698806A1 (de) * 2012-08-13 2014-02-19 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Dotierungsprofils in einem Halbleitersubstrat
US10352989B2 (en) 2014-07-01 2019-07-16 Raja Technologies Inc. System and method of semiconductor characterization
US9002677B1 (en) * 2014-07-01 2015-04-07 Raja Technologies System and method of semiconductor characterization
US10564215B2 (en) 2014-07-01 2020-02-18 Raja Technologies Inc. System and method of semiconductor characterization
DE102015226516B4 (de) * 2015-12-22 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Dotierung von Halbleitersubstraten mittels eines Co-Diffusionsprozesses
JP6254748B1 (ja) * 2016-11-14 2017-12-27 信越化学工業株式会社 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池
CN113594303B (zh) * 2021-08-05 2024-05-28 通威太阳能（安徽）有限公司 一种选择性发射极的制作方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183130A (en) * 1962-01-22 1965-05-11 Motorola Inc Diffusion process and apparatus
US3956036A (en) * 1975-02-10 1976-05-11 Victory Engineering Corporation Method of diffusing silicon slices with dopant at high temperatures
US4029518A (en) * 1974-11-20 1977-06-14 Sharp Kabushiki Kaisha Solar cell
US4104091A (en) * 1977-05-20 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Application of semiconductor diffusants to solar cells by screen printing
US4676845A (en) * 1986-02-18 1987-06-30 Spire Corporation Passivated deep p/n junction
EP0874387A1 (de) * 1997-04-22 1998-10-28 IMEC vzw Kontinuierlicher Ofen mit hohem Durchsatz für Diffusionsbehandlung mit verschiedenen Diffusionsquellen
DE19908400A1 (de) * 1999-02-26 2000-09-07 Bosch Gmbh Robert Verfahren zur Herstellung hochdotierter Halbleiterbauelemente
JP2007053353A (ja) * 2005-07-22 2007-03-01 Nippon Synthetic Chem Ind Co Ltd:The リン拡散用塗布液

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49141870U (de) 1973-04-03 1974-12-06
JP3638356B2 (ja) 1995-11-22 2005-04-13 京セラ株式会社 インクジェットヘッド
US6117266A (en) 1997-12-19 2000-09-12 Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) Furnace for continuous, high throughput diffusion processes from various diffusion sources
US6180869B1 (en) * 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
US6559039B2 (en) * 2001-05-15 2003-05-06 Applied Materials, Inc. Doped silicon deposition process in resistively heated single wafer chamber
US6613974B2 (en) * 2001-12-21 2003-09-02 Micrel, Incorporated Tandem Si-Ge solar cell with improved conversion efficiency
US7312422B2 (en) * 2006-03-17 2007-12-25 Momentive Performance Materials Inc. Semiconductor batch heating assembly
JP2008021824A (ja) * 2006-07-13 2008-01-31 Toshiba Corp ボートトレイ及びウェーハ用熱処理炉
EP2077587A4 (de) * 2006-09-27 2016-10-26 Kyocera Corp Solarzellenanordnung und verfahren zu ihrer herstellung
US8035027B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells
US7846762B2 (en) * 2008-09-22 2010-12-07 Applied Materials, Inc. Integrated emitter formation and passivation
TWI506807B (zh) * 2012-02-03 2015-11-01 Chia Gee Wang 太陽能電池製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183130A (en) * 1962-01-22 1965-05-11 Motorola Inc Diffusion process and apparatus
US4029518A (en) * 1974-11-20 1977-06-14 Sharp Kabushiki Kaisha Solar cell
US3956036A (en) * 1975-02-10 1976-05-11 Victory Engineering Corporation Method of diffusing silicon slices with dopant at high temperatures
US4104091A (en) * 1977-05-20 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Application of semiconductor diffusants to solar cells by screen printing
US4676845A (en) * 1986-02-18 1987-06-30 Spire Corporation Passivated deep p/n junction
EP0874387A1 (de) * 1997-04-22 1998-10-28 IMEC vzw Kontinuierlicher Ofen mit hohem Durchsatz für Diffusionsbehandlung mit verschiedenen Diffusionsquellen
DE19908400A1 (de) * 1999-02-26 2000-09-07 Bosch Gmbh Robert Verfahren zur Herstellung hochdotierter Halbleiterbauelemente
JP2007053353A (ja) * 2005-07-22 2007-03-01 Nippon Synthetic Chem Ind Co Ltd:The リン拡散用塗布液

Also Published As

Publication number Publication date
CN102318086B (zh) 2014-10-01
EP2374159A2 (de) 2011-10-12
JP5677973B2 (ja) 2015-02-25
WO2010066626A2 (de) 2010-06-17
DE102008055515A1 (de) 2010-07-15
TW201029056A (en) 2010-08-01
JP2012511819A (ja) 2012-05-24
US20110278702A1 (en) 2011-11-17
US9385263B2 (en) 2016-07-05
CN102318086A (zh) 2012-01-11

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