WO2012022349A3 - Verfahren zur herstellung einer solarzelle mit einem selektiven emitter - Google Patents

Verfahren zur herstellung einer solarzelle mit einem selektiven emitter Download PDF

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Publication number
WO2012022349A3
WO2012022349A3 PCT/DE2011/075181 DE2011075181W WO2012022349A3 WO 2012022349 A3 WO2012022349 A3 WO 2012022349A3 DE 2011075181 W DE2011075181 W DE 2011075181W WO 2012022349 A3 WO2012022349 A3 WO 2012022349A3
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WO
WIPO (PCT)
Prior art keywords
solar cell
glass layer
cell substrate
layer
dopant
Prior art date
Application number
PCT/DE2011/075181
Other languages
English (en)
French (fr)
Other versions
WO2012022349A2 (de
Inventor
Jolanta Olkowska-Oetzel
Jörg ISENBERG
Andreas Teppe
Matthias Geiger
Original Assignee
Centrotherm Photovoltaics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102010033030A external-priority patent/DE102010033030A1/de
Priority claimed from DE102010054182A external-priority patent/DE102010054182A1/de
Application filed by Centrotherm Photovoltaics Ag filed Critical Centrotherm Photovoltaics Ag
Priority to EP11770037.7A priority Critical patent/EP2601691A2/de
Priority to KR1020137004914A priority patent/KR20130108271A/ko
Priority to CN2011800480183A priority patent/CN103262266A/zh
Publication of WO2012022349A2 publication Critical patent/WO2012022349A2/de
Publication of WO2012022349A3 publication Critical patent/WO2012022349A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter aufweisend die Schritte des Ausbildens (10, 12, 14) einer Dotierstoff enthaltenden Glasschicht (55) auf wenigstens einem Teil einer Oberfläche eines Solarzellensubstrats (50), des Ausbildens (16) eines schwach dotierten Emitters (58) in von der Glasschicht (55) bedeckten Bereichen des Solarzellensubstrats (50) durch Eindiffusion (16) von Dotierstoff aus der Glasschicht (55) in das Solarzellensubstrat (50) hinein, der lokalen Eindiffusion (18) zusätzlichen Dotierstoffs aus der Glasschicht (55) in das Solarzellensubstrat (50) hinein durch lokales Erhitzen (18) von unter der Glasschicht (55) gelegenen Bereichen des Solarzellensubstrats (50) zum Zwecke der lokalen Ausbildung (18) stark dotierter Emitterbereiche (60), bei welchem als Dotierstoff enthaltende Glasschicht (55) solch eine Glasschicht (55) auf dem wenigstens einen Teil der Oberfläche des Solarzellensubstrats (50) ausgebildet wird (10, 12, 14), die in einer näher an der Oberfläche des Solarzellensubstrats (50) gelegenen ersten Teilschicht (52) der Glasschicht (55) eine niedrigere Dotierstoffkonzentration aufweist als in einer weiter von der Oberfläche des Solarzellensubstrats (50) entfernt gelegenen zweiten Teilschicht (54) der Glasschicht (55).
PCT/DE2011/075181 2010-08-02 2011-08-02 Verfahren zur herstellung einer solarzelle mit einem selektiven emitter WO2012022349A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP11770037.7A EP2601691A2 (de) 2010-08-02 2011-08-02 Verfahren zur herstellung einer solarzelle mit einem selektiven emitter
KR1020137004914A KR20130108271A (ko) 2010-08-02 2011-08-02 셀렉티브 에미터를 구비한 태양전지의 생산방법
CN2011800480183A CN103262266A (zh) 2010-08-02 2011-08-02 包括选择性发射极的太阳能电池的制造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102010033030A DE102010033030A1 (de) 2010-08-02 2010-08-02 Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter
DE102010033030.2 2010-08-02
DE102010044313.1 2010-09-03
DE102010044313 2010-09-03
DE102010054182A DE102010054182A1 (de) 2010-09-03 2010-12-10 Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter
DE102010054182.6 2010-12-10

Publications (2)

Publication Number Publication Date
WO2012022349A2 WO2012022349A2 (de) 2012-02-23
WO2012022349A3 true WO2012022349A3 (de) 2013-07-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/075181 WO2012022349A2 (de) 2010-08-02 2011-08-02 Verfahren zur herstellung einer solarzelle mit einem selektiven emitter

Country Status (4)

Country Link
EP (1) EP2601691A2 (de)
KR (1) KR20130108271A (de)
CN (1) CN103262266A (de)
WO (1) WO2012022349A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8664015B2 (en) * 2011-10-13 2014-03-04 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device
DE102012018746A1 (de) * 2012-09-21 2014-03-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten
US8912071B2 (en) 2012-12-06 2014-12-16 International Business Machines Corporation Selective emitter photovoltaic device
CN104157736A (zh) * 2014-08-15 2014-11-19 内蒙古日月太阳能科技有限责任公司 太阳能电池制备方法及太阳能电池
CN107394012A (zh) * 2017-08-18 2017-11-24 常州亿晶光电科技有限公司 一种硅片激光掺杂se的扩散工艺
CN110896116B (zh) * 2018-09-10 2023-01-17 浙江清华柔性电子技术研究院 晶体硅太阳能电池扩散层及其制备方法、电池、组件
CN111180530A (zh) * 2019-12-27 2020-05-19 天津爱旭太阳能科技有限公司 一种选择性发射极电池的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429037B1 (en) * 1998-06-29 2002-08-06 Unisearch Limited Self aligning method for forming a selective emitter and metallization in a solar cell
US7615393B1 (en) * 2008-10-29 2009-11-10 Innovalight, Inc. Methods of forming multi-doped junctions on a substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010010813A1 (de) 2010-03-03 2011-09-08 Centrotherm Photovoltaics Ag Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429037B1 (en) * 1998-06-29 2002-08-06 Unisearch Limited Self aligning method for forming a selective emitter and metallization in a solar cell
US7615393B1 (en) * 2008-10-29 2009-11-10 Innovalight, Inc. Methods of forming multi-doped junctions on a substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JÄAGER U ET AL: "SELECTIVE EMITTER BY LASER DOPING FROM PHOSPHOSILICATE GLASS", 24RD EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE,, 21 September 2009 (2009-09-21), pages 1740 - 1743, XP007919652 *

Also Published As

Publication number Publication date
CN103262266A (zh) 2013-08-21
WO2012022349A2 (de) 2012-02-23
KR20130108271A (ko) 2013-10-02
EP2601691A2 (de) 2013-06-12

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