CN103262266A - 包括选择性发射极的太阳能电池的制造方法 - Google Patents
包括选择性发射极的太阳能电池的制造方法 Download PDFInfo
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- CN103262266A CN103262266A CN2011800480183A CN201180048018A CN103262266A CN 103262266 A CN103262266 A CN 103262266A CN 2011800480183 A CN2011800480183 A CN 2011800480183A CN 201180048018 A CN201180048018 A CN 201180048018A CN 103262266 A CN103262266 A CN 103262266A
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- Prior art keywords
- solar cell
- cell substrate
- glassy layer
- alloy
- dopant
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 239000002019 doping agent Substances 0.000 claims abstract description 64
- 239000011521 glass Substances 0.000 claims abstract description 63
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 88
- 239000000956 alloy Substances 0.000 claims description 88
- 229910052698 phosphorus Inorganic materials 0.000 claims description 84
- 239000011574 phosphorus Substances 0.000 claims description 84
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 76
- 238000009792 diffusion process Methods 0.000 claims description 73
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 51
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 5
- 238000001953 recrystallisation Methods 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 119
- 229910052710 silicon Inorganic materials 0.000 description 54
- 239000010703 silicon Substances 0.000 description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 53
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000006872 improvement Effects 0.000 description 9
- 230000005611 electricity Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910000714 At alloy Inorganic materials 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 241001270131 Agaricus moelleri Species 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 150000003017 phosphorus Chemical class 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010033030.2 | 2010-08-02 | ||
DE102010033030A DE102010033030A1 (de) | 2010-08-02 | 2010-08-02 | Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter |
DE102010044313 | 2010-09-03 | ||
DE102010044313.1 | 2010-09-03 | ||
DE102010054182.6 | 2010-12-10 | ||
DE102010054182A DE102010054182A1 (de) | 2010-09-03 | 2010-12-10 | Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter |
PCT/DE2011/075181 WO2012022349A2 (de) | 2010-08-02 | 2011-08-02 | Verfahren zur herstellung einer solarzelle mit einem selektiven emitter |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103262266A true CN103262266A (zh) | 2013-08-21 |
Family
ID=45605464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011800480183A Pending CN103262266A (zh) | 2010-08-02 | 2011-08-02 | 包括选择性发射极的太阳能电池的制造方法 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP2601691A2 (de) |
KR (1) | KR20130108271A (de) |
CN (1) | CN103262266A (de) |
WO (1) | WO2012022349A2 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107394012A (zh) * | 2017-08-18 | 2017-11-24 | 常州亿晶光电科技有限公司 | 一种硅片激光掺杂se的扩散工艺 |
CN110896116A (zh) * | 2018-09-10 | 2020-03-20 | 浙江清华柔性电子技术研究院 | 晶体硅太阳能电池扩散层及其制备方法、电池、组件 |
CN111180530A (zh) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | 一种选择性发射极电池的制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8664015B2 (en) * | 2011-10-13 | 2014-03-04 | Samsung Sdi Co., Ltd. | Method of manufacturing photoelectric device |
DE102012018746A1 (de) * | 2012-09-21 | 2014-03-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Dotierung von Halbleitersubstraten |
US8912071B2 (en) | 2012-12-06 | 2014-12-16 | International Business Machines Corporation | Selective emitter photovoltaic device |
CN104157736A (zh) * | 2014-08-15 | 2014-11-19 | 内蒙古日月太阳能科技有限责任公司 | 太阳能电池制备方法及太阳能电池 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6429037B1 (en) * | 1998-06-29 | 2002-08-06 | Unisearch Limited | Self aligning method for forming a selective emitter and metallization in a solar cell |
US7615393B1 (en) * | 2008-10-29 | 2009-11-10 | Innovalight, Inc. | Methods of forming multi-doped junctions on a substrate |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010010813A1 (de) | 2010-03-03 | 2011-09-08 | Centrotherm Photovoltaics Ag | Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung |
-
2011
- 2011-08-02 WO PCT/DE2011/075181 patent/WO2012022349A2/de active Application Filing
- 2011-08-02 EP EP11770037.7A patent/EP2601691A2/de not_active Withdrawn
- 2011-08-02 CN CN2011800480183A patent/CN103262266A/zh active Pending
- 2011-08-02 KR KR1020137004914A patent/KR20130108271A/ko not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6429037B1 (en) * | 1998-06-29 | 2002-08-06 | Unisearch Limited | Self aligning method for forming a selective emitter and metallization in a solar cell |
US7615393B1 (en) * | 2008-10-29 | 2009-11-10 | Innovalight, Inc. | Methods of forming multi-doped junctions on a substrate |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107394012A (zh) * | 2017-08-18 | 2017-11-24 | 常州亿晶光电科技有限公司 | 一种硅片激光掺杂se的扩散工艺 |
CN110896116A (zh) * | 2018-09-10 | 2020-03-20 | 浙江清华柔性电子技术研究院 | 晶体硅太阳能电池扩散层及其制备方法、电池、组件 |
CN111180530A (zh) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | 一种选择性发射极电池的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20130108271A (ko) | 2013-10-02 |
WO2012022349A2 (de) | 2012-02-23 |
EP2601691A2 (de) | 2013-06-12 |
WO2012022349A3 (de) | 2013-07-18 |
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Application publication date: 20130821 |