WO2019150224A1 - 表示装置および電子機器 - Google Patents
表示装置および電子機器 Download PDFInfo
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- WO2019150224A1 WO2019150224A1 PCT/IB2019/050507 IB2019050507W WO2019150224A1 WO 2019150224 A1 WO2019150224 A1 WO 2019150224A1 IB 2019050507 W IB2019050507 W IB 2019050507W WO 2019150224 A1 WO2019150224 A1 WO 2019150224A1
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- Prior art keywords
- transistor
- wiring
- electrically connected
- pixel
- electrode
- Prior art date
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- G09G2300/0439—Pixel structures
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0209—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
- G09G2320/0214—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display with crosstalk due to leakage current of pixel switch in active matrix panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0252—Improving the response speed
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/10—Special adaptations of display systems for operation with variable images
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
Definitions
- One embodiment of the present invention relates to a display device.
- one embodiment of the present invention is not limited to the above technical field.
- the technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
- one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, the technical field of one embodiment of the present invention disclosed in this specification more specifically includes a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, A driving method or a manufacturing method thereof can be given as an example.
- a semiconductor device refers to any device that can function by utilizing semiconductor characteristics.
- a transistor and a semiconductor circuit are one embodiment of a semiconductor device.
- a memory device, a display device, an imaging device, and an electronic device may include a semiconductor device.
- a silicon-based semiconductor material is widely known as a semiconductor thin film applicable to a transistor, but an oxide semiconductor has attracted attention as another material.
- oxide semiconductors for example, not only single-component metal oxides such as indium oxide and zinc oxide but also multi-component metal oxides are known.
- Researches on In—Ga—Zn oxide (hereinafter also referred to as IGZO) are being actively conducted among multi-element metal oxides.
- Non-Patent Document 1 and Non-Patent Document 2 also disclose a technique for manufacturing a transistor using an oxide semiconductor having a CAAC structure. Further, Non-Patent Document 4 and Non-Patent Document 5 show that even an oxide semiconductor having lower crystallinity than the CAAC structure and the nc structure has a minute crystal.
- Non-Patent Document 6 a transistor using IGZO as an active layer has extremely low off-state current (see Non-Patent Document 6), and an LSI and a display using the characteristics have been reported (see Non-Patent Document 7 and Non-Patent Document 8). .
- Patent Document 1 discloses a memory device in which a transistor with extremely low off-state current is used for a memory cell.
- HDR High Dynamic Range
- the output voltage of a source driver for a liquid crystal display device is about 15 V, and a high output source driver must be used to supply a voltage higher than that to the display element.
- a high-output source driver has high power consumption, and a new driver IC may need to be developed.
- an object of one embodiment of the present invention is to provide a display device capable of improving image quality. Another object is to provide a display device that can supply a voltage higher than the output voltage of a source driver to a display element. Another object is to provide a display device capable of increasing the luminance of a display image. Another object is to provide a display device capable of increasing a frame frequency.
- Another object is to provide a display device with low power consumption. Another object is to provide a highly reliable display device. Another object is to provide a novel display device or the like. Another object is to provide a method for driving the display device. Another object is to provide a novel semiconductor device or the like.
- One embodiment of the present invention relates to a display device capable of improving image quality.
- One embodiment of the present invention includes a first circuit, a pixel, and a wiring, and the first circuit has a function of supplying data to the wiring and a function of retaining data by floating the wiring.
- the pixel has a function of fetching data from the wiring twice and adding the data.
- the pixel writes data for the first time while the data is supplied to the wiring.
- the pixel holds data in the wiring.
- the display device can perform data writing for the second time during a certain period.
- the present invention includes a first circuit, a first pixel, a second pixel, a first wiring, and a second wiring.
- the first circuit includes: The first circuit has a function of supplying first data to one wiring and a function of holding the first data by making the first wiring floating, and the first circuit supplies the second data to the second wiring. And a function of holding the second data by floating the second wiring, and the first pixel has a function of taking the first data twice from the first wiring and adding the data, The second pixel has a function of taking the second data twice from the second wiring and adding the second data.
- the first pixel is 1 during a period in which the first data is supplied to the first wiring.
- the first data is written for the first time, and the first pixel is twice in a period in which the first data is held in the first wiring.
- the second pixel writes the second data for the first time during the period in which the second data is supplied to the second wiring, and the second pixel A period in which the second data is written for the second time while the second data is held in the second wiring and the first data is written for the second time in the first pixel;
- This is a display device in which a pixel can overlap a period for writing the second data for the first time.
- the third wiring, the fourth wiring, and the fifth wiring further have a function of supplying a signal potential for selecting the first pixel, and the fourth wiring.
- the fourth wiring has a function of supplying a signal potential for selecting the second pixel
- the fifth wiring has a function of supplying the second potential. It may have a function of supplying a signal potential for selecting the pixel.
- the first circuit is electrically connected to the first wiring
- the first circuit is electrically connected to the second wiring
- the first circuit is electrically connected to the second wiring.
- the pixel and the second pixel each include a first transistor, a second transistor, a third transistor, a first capacitor, and a circuit block.
- the source and drain of the first transistor One is electrically connected to one of a source and a drain of the second transistor, one of the source and the drain of the second transistor is electrically connected to one electrode of the first capacitor, and the first The other electrode of the capacitor element is electrically connected to one of the source and the drain of the third transistor.
- One of the source and the drain of the third transistor is electrically connected to the circuit block, and in the first pixel, the other of the source and the drain of the first transistor is electrically connected to the first wiring.
- the other of the source and the drain of the third transistor is electrically connected to the first wiring
- the gate of the first transistor is electrically connected to the fourth wiring
- the second transistor The gate of the transistor is electrically connected to the third wiring.
- the gate of the third transistor is electrically connected to the third wiring. In the second pixel, the source or drain of the first transistor is connected.
- the other is electrically connected to the second wiring, the other of the source and the drain of the third transistor is electrically connected to the second wiring, and the gate of the first transistor is Electrically connected to the fifth wiring; the gate of the second transistor is electrically connected to the fourth wiring; the gate of the third transistor is electrically connected to the fourth wiring;
- the block is a display device having a display element.
- the second capacitor element and the third capacitor element are provided, and one electrode of the second capacitor element is electrically connected to the first wiring, and one electrode of the third capacitor element is connected to the first capacitor element. You may electrically connect with the 2nd wiring.
- the first circuit can be electrically connected to the source driver.
- the third to fifth wirings can be electrically connected to the gate driver.
- the first circuit includes a fourth transistor and a fifth transistor.
- One of a source and a drain of the fourth transistor is electrically connected to the first wiring
- the fifth transistor includes One of the source and the drain is electrically connected to the second wiring, and the other of the source and the drain of the fourth transistor and the other of the source and the drain of the fifth transistor can be electrically connected.
- the circuit block includes a sixth transistor, a seventh transistor, a fourth capacitor element, and an organic EL element as a display element.
- One electrode of the organic EL element is a source of the seventh transistor. Or the other of the source and the drain of the seventh transistor is electrically connected to one electrode of the fourth capacitor, and the one electrode of the fourth capacitor is
- the sixth transistor is electrically connected to one of a source and a drain, and the sixth transistor has a gate electrically connected to the other electrode of the fourth capacitor and the other electrode of the fourth capacitor. Can be configured to be electrically connected to one electrode of the first capacitor.
- the other of the source and the drain of the sixth transistor can be electrically connected to the other of the source and the drain of the second transistor.
- the circuit block includes an eighth transistor, a fifth capacitor, and a liquid crystal element as a display element.
- One electrode of the liquid crystal element is electrically connected to one electrode of the fifth capacitor.
- one electrode of the fifth capacitor is electrically connected to one of a source and a drain of the eighth transistor, and the other of the source and the drain of the eighth transistor is connected to the first capacitor It is good also as a structure electrically connected with one electrode.
- the other electrode of the fifth capacitor can be electrically connected to the other of the source and the drain of the second transistor.
- liquid crystal element a light scattering liquid crystal element having a resin portion and a liquid crystal portion between a pair of electrodes can be used.
- the display may be performed by injecting the liquid to the outside through the liquid crystal element.
- the third transistor includes a metal oxide in a channel formation region.
- the metal oxide includes In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).
- a display device capable of improving image quality can be provided.
- a display device that can supply a voltage higher than the output voltage of the source driver to the display element can be provided.
- a display device capable of increasing the frame frequency can be provided.
- a display device with low power consumption can be provided.
- a highly reliable display device can be provided.
- a novel display device or the like can be provided.
- a method for driving the display device can be provided.
- a novel semiconductor device or the like can be provided.
- FIG. 10 illustrates a display device.
- FIG. 10 illustrates a display device.
- 6 is a timing chart illustrating operation of a display device.
- FIG. 6 illustrates a pixel circuit.
- FIG. 10 illustrates a display device. 6 is a timing chart illustrating operation of a display device.
- FIG. 10 illustrates a display device.
- FIG. 10 illustrates a display device.
- FIG. 10 illustrates a display device.
- FIG. 10 illustrates a display device.
- FIG. 10 illustrates a display device.
- FIG. 10 illustrates a display device.
- FIG. 10 illustrates a display device.
- FIG. 10 illustrates a display device.
- 6A and 6B illustrate a transistor. 6
- One embodiment of the present invention is a display device having a function of adding image data in a pixel.
- Each pixel is provided with a storage node, and first image data is first held in the storage node.
- the second image data is added to the storage node by capacitive coupling and supplied to the display element. That is, a data potential higher than the output voltage of the source driver can be supplied to the display element.
- the same data is used for the first image data and the second image data.
- the first writing is performed during a period in which the image data is supplied to the source line
- the second writing is performed in a period in which the image data is held in the source line. Accordingly, data can be charged to the source line only once, and power consumption can be reduced. Further, the writing speed can be improved by using two source lines and performing writing to two pixels in parallel.
- FIG. 1 illustrates a display device of one embodiment of the present invention.
- the display device includes a pixel 10, a circuit 11, a source driver 12, and a gate driver 13.
- the pixel 10 has a function of capturing image data twice through different paths. Accordingly, one pixel 10 is electrically connected to one source line through two wirings.
- Two source lines are provided per column (first source line and second source line), and are electrically connected to the pixels 10 alternately for each row.
- the pixel 10 in the first row is electrically connected to the first source line
- the pixel 10 in the second row is electrically connected to the second source line
- the pixel 10 in the third row is the first source line. It is electrically connected to the source line.
- the circuit 11 is electrically connected to the source driver 12 and the two source lines, and can supply the image data supplied from the source driver 12 to the first source line or the second source line. In addition, the circuit 11 can float the two source lines, and can hold image data in the first source line and the second source line.
- Image data can be held on the source line more stably by electrically connecting a capacitor to the source line.
- the capacitance element is not limited to one, and a plurality of capacitance elements may be connected in parallel. Note that in the case where the wiring capacitance (parasitic capacitance) of the source line is sufficiently larger than the data holding capacitance of one pixel 10, the capacitor element is not necessarily provided.
- One pixel 10 is electrically connected to two gate lines, and is controlled so that the first writing of image data and the second writing of image data have different timings.
- the timing of writing the second image data of the pixels 10 in the n-th row (n is a natural number of 1 or more) and the timing of writing the first image data of the pixels 10 in the (n + 1) -th row can be overlapped.
- One gate line can be shared by the pixel 10 in the n-th row and the pixel 10 in the n + 1-th row.
- the number of gate lines to which the pixels 10 in the first row and the last row are electrically connected is 1.5 (1 + 0.5), but the other pixels 10 are electrically connected.
- the number of gate lines is one (0.5 + 0.5). That is, since one pixel 10 can be controlled by substantially one gate line, the number of signals for writing image data can be reduced. In addition, a gate driver that requires complicated control is not required. In addition, since the number of gate lines is reduced, the aperture ratio of the pixel 10 can be improved.
- Data is written to the pixel 10 for the first time during a period in which image data is supplied to the source line, and for the second time during which the image data is held in the same source line. Therefore, the image data is charged to the source line only once. Further, by using two source lines as described above, the parallel operation of the pixel 10 in the n-th row and the pixel 10 in the (n + 1) -th row is possible, so that the writing of image data can be speeded up.
- FIG. 2 shows a specific example of the circuit 11 and the pixels 10 in the m-th column, the n-th row to the (n + 2) -th row (m and n are natural numbers of 1 or more).
- the circuit 11 [m] can include the transistor 107 and the transistor 108.
- the gate of the transistor 107 is electrically connected to the wiring 124, and the gate of the transistor 108 is electrically connected to the wiring 123.
- One of a source and a drain of the transistor 107 is electrically connected to the wiring 125 [m]
- one of a source and a drain of the transistor 108 is electrically connected to the wiring 126 [m].
- the other of the source and the drain of the transistor 107 and the other of the source and the drain of the transistor 108 are electrically connected to the output line for the m-th column of the source driver 12.
- the wiring 123 and the wiring 124 function as signal lines for controlling conduction of the transistor 108 or the transistor 107.
- the wiring 125 [m] and the wiring 126 [m] function as source lines.
- One electrode of the capacitor 105 is electrically connected to the wiring 125 [m].
- one electrode of the capacitor 106 is electrically connected to the wiring 126 [m].
- the other electrode of the capacitor 105 and the other electrode of the capacitor 106 are electrically connected to a wiring 135 to which a fixed potential is supplied. Note that as described above, a plurality of the capacitor 105 and the capacitor 106 may be connected in parallel. Further, the capacitor 105 and the capacitor 106 may be omitted.
- the image data (DATA) output from the source driver 12 is output to the wiring 126 [m].
- image data (DATA) output from the source driver is output to the wiring 125 [m].
- the wiring 126 [m] is in a floating state, and the image data (DATA) is held in the wiring 126 [m].
- the wiring 125 [m] is floated, and image data (DATA) is held in the wiring 125 [m].
- circuit 11 has a function of selectively supplying data to the wiring 125 and the wiring 126 and a function of floating the wiring 125 and the wiring 126, It may be a configuration.
- the pixel 10 includes a transistor 101, a transistor 102, a transistor 103, a capacitor 104, and a circuit block 110.
- the circuit block 110 can include a transistor, a capacitor, a display element, and the like, which will be described in detail later.
- One of the source and the drain of the transistor 101 is electrically connected to one of the source and the drain of the transistor 102.
- One of a source and a drain of the transistor 102 is electrically connected to one electrode of the capacitor 104.
- the other electrode of the capacitor 104 is electrically connected to one of a source and a drain of the transistor 103.
- One of a source and a drain of the transistor 103 is electrically connected to the circuit block 110.
- a wiring to which one of the source and the drain of the transistor 103, the other electrode of the capacitor 104, and the circuit block are connected is a node NM.
- the display element included in the circuit block 110 operates according to the potential of the node NM.
- the element of the circuit block 110 connected to the node NM can make the node NM floating.
- the gate of the transistor 101 is electrically connected to the wiring 121 [n + 1].
- the gate of the transistor 102 and the gate of the transistor 103 are electrically connected to the wiring 121 [n].
- the other of the source and the drain of the transistor 101 and the other of the source and the drain of the transistor 103 are electrically connected to the wiring 125 [m].
- the other of the source and the drain of the transistor 102 is electrically connected to a wiring that can supply a specific potential “V ref ”.
- the gate of the transistor 101 is electrically connected to the wiring 121 [n + 2].
- the gate of the transistor 102 and the gate of the transistor 103 are electrically connected to the wiring 121 [n + 1].
- the other of the source and the drain of the transistor 101 and the other of the source and the drain of the transistor 103 are electrically connected to the wiring 126 [m].
- the other of the source and the drain of the transistor 102 is electrically connected to a wiring that can supply a specific potential “V ref ”.
- the wiring 121 functions as a gate line and is electrically connected to the gate driver 13 (see FIG. 1).
- the pixel 10 is connected to the source line (the wiring 125 or the wiring 126) that is alternately different for each row. Further, the gate line (wiring 121) is electrically connected to two pixels 10 adjacent in the column direction.
- a wiring that can supply “V ref ” for example, a power supply line electrically connected to an element of the circuit block 110 can be used.
- V ref since “V ref ” is supplied from a power supply line or the like, the first data supply and the second data supply can be performed from one source line by switching timing. That is, a display device can be configured with a small number of wires.
- the node NM is a storage node, and the data supplied to the wiring 125 or the wiring 126 can be written to the node NM by turning on the transistor 103. Further, when the transistor 103 is turned off, the data can be held in the node NM. By using a transistor with extremely low off-state current as the transistor 103, the potential of the node NM can be held for a long time.
- a transistor using a metal oxide for a channel formation region hereinafter referred to as an OS transistor
- an OS transistor may be applied not only to the transistor 103 but also to other transistors included in the pixel 10. Further, an OS transistor may be applied to the transistor included in the circuit 11. Further, a transistor having Si in a channel formation region (hereinafter referred to as Si transistor) may be applied to the pixel 10 and the circuit 11. Alternatively, both an OS transistor and a Si transistor may be used. Note that examples of the Si transistor include a transistor including amorphous silicon and a transistor including crystalline silicon (typically, low-temperature polysilicon or single crystal silicon).
- a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used.
- a typical example is an oxide semiconductor containing indium.
- a CAAC-OS or a CAC-OS described later can be used.
- a CAAC-OS is suitable for a transistor or the like in which atoms constituting a crystal are stable and reliability is important.
- the CAC-OS exhibits high mobility characteristics, it is suitable for a transistor that performs high-speed driving.
- the OS transistor Since the OS transistor has a large energy gap, it exhibits extremely low off-state current characteristics. Further, the OS transistor has characteristics different from those of the Si transistor such that impact ionization, avalanche breakdown, a short channel effect, and the like do not occur, and a highly reliable circuit can be formed.
- the semiconductor layer included in the OS transistor includes, for example, an In-M-Zn-based oxide containing indium, zinc, and M (a metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). It can be set as the film
- the atomic ratio of the metal elements of the sputtering target used for forming the In-M-Zn oxide is In ⁇ M, Zn It is preferable to satisfy ⁇ M.
- the atomic ratio of the semiconductor layer to be formed includes a variation of plus or minus 40% of the atomic ratio of the metal element contained in the sputtering target.
- an oxide semiconductor with low carrier density is used as the semiconductor layer.
- the semiconductor layer has a carrier density of 1 ⁇ 10 17 / cm 3 or less, preferably 1 ⁇ 10 15 / cm 3 or less, more preferably 1 ⁇ 10 13 / cm 3 or less, more preferably 1 ⁇ 10 11 / cm 3. 3 or less, more preferably less than 1 ⁇ 10 10 / cm 3 , and an oxide semiconductor having a carrier density of 1 ⁇ 10 ⁇ 9 / cm 3 or more can be used.
- Such an oxide semiconductor is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
- the oxide semiconductor can be said to be an oxide semiconductor having a low impurity concentration and stable characteristics.
- the composition is not limited thereto, and a transistor having an appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics (such as field-effect mobility and threshold voltage) of the transistor.
- the semiconductor layer in order to obtain the required semiconductor characteristics of the transistor, it is preferable that the semiconductor layer have appropriate carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like. .
- the concentration of silicon or carbon in the semiconductor layer is 2 ⁇ 10 18 atoms / cm 3 or less, preferably 2 ⁇ 10 17 atoms / cm 3 or less.
- the concentration of alkali metal or alkaline earth metal (concentration obtained by secondary ion mass spectrometry) in the semiconductor layer is 1 ⁇ 10 18 atoms / cm 3 or less, preferably 2 ⁇ 10 16 atoms / cm 3 or less.
- the nitrogen concentration (concentration obtained by secondary ion mass spectrometry) in the semiconductor layer is preferably 5 ⁇ 10 18 atoms / cm 3 or less.
- the semiconductor layer may have a non-single crystal structure, for example.
- the non-single-crystal structure includes, for example, a CAAC-OS (C-Axis Crystalline Oxide Semiconductor) having a crystal oriented in the c-axis, a polycrystalline structure, a microcrystalline structure, or an amorphous structure.
- CAAC-OS C-Axis Crystalline Oxide Semiconductor
- the amorphous structure has the highest density of defect states
- the CAAC-OS has the lowest density of defect states.
- An oxide semiconductor film having an amorphous structure has, for example, disordered atomic arrangement and no crystal component.
- an amorphous oxide film has, for example, a completely amorphous structure and does not have a crystal part.
- the semiconductor layer may be a mixed film including two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAAC-OS region, and a single crystal structure region.
- the mixed film may have a single-layer structure or a stacked structure including any two or more of the above-described regions.
- CAC Cloud-Aligned Composite
- the CAC-OS is one structure of a material in which an element included in an oxide semiconductor is unevenly distributed with a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. Note that in the following, in an oxide semiconductor, one or more metal elements are unevenly distributed, and a region including the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof.
- the state mixed with is also referred to as a mosaic or patch.
- the oxide semiconductor preferably contains at least indium.
- One kind selected from the above or a plurality of kinds may be included.
- a CAC-OS in In-Ga-Zn oxide is an indium oxide (hereinafter referred to as InO).
- X1 (X1 is greater real than 0) and.), or indium zinc oxide (hereinafter, in X2 Zn Y2 O Z2 ( X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic InO X1 or in X2 Zn Y2 O Z2, is a configuration in which uniformly distributed in the film (hereinafter Also referred to as a cloud-like.) A.
- CAC-OS includes a region GaO X3 is the main component, and In X2 Zn Y2 O Z2, or InO X1 is the main component region is a composite oxide semiconductor having a structure that is mixed.
- the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.
- IGZO is a common name and may refer to one compound of In, Ga, Zn, and O.
- ZnO ZnO
- the crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure.
- the CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.
- CAC-OS relates to a material structure of an oxide semiconductor.
- CAC-OS refers to a region observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn and O, and nanoparticles mainly composed of In.
- the region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.
- the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions.
- a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.
- a region GaO X3 is the main component, and In X2 Zn Y2 O Z2 or InO X1 is the main component region, in some cases clear boundary can not be observed.
- the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In.
- the region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.
- the CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example.
- a CAC-OS is formed by a sputtering method
- any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas.
- the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible.
- the flow rate ratio of the oxygen gas is 0% to less than 30%, preferably 0% to 10%. .
- the CAC-OS has a feature that a clear peak is not observed when measurement is performed using a ⁇ / 2 ⁇ scan by an out-of-plane method, which is one of X-ray diffraction (XRD) measurement methods.
- XRD X-ray diffraction
- the CAC-OS in an electron beam diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam), a ring-shaped high luminance region and a plurality of regions in the ring region are provided. A bright spot is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.
- nc nano-crystal
- GaO X3 is a main component by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectroscopy). It can be confirmed that the region and the region mainly composed of In X2 Zn Y2 O Z2 or InO X1 are unevenly distributed and mixed.
- the CAC-OS has a structure different from that of the IGZO compound in which the metal element is uniformly distributed, and has a property different from that of the IGZO compound. That is, in the CAC-OS, a region in which GaO X3 or the like is a main component and a region in which In X2 Zn Y2 O Z2 or InO X1 is a main component are phase-separated from each other, and a region in which each element is a main component. Has a mosaic structure.
- the region containing In X2 Zn Y2 O Z2 or InO X1 as a main component is a region having higher conductivity than a region containing GaO X3 or the like as a main component. That, In X2 Zn Y2 O Z2 or InO X1, is an area which is the main component, by carriers flow, expressed the conductivity of the oxide semiconductor. Therefore, a region where In X2 Zn Y2 O Z2 or InO X1 is a main component is distributed in a cloud shape in the oxide semiconductor, whereby high field-effect mobility ( ⁇ ) can be realized.
- areas such as GaO X3 is the main component, as compared to the In X2 Zn Y2 O Z2 or InO X1 is the main component area, it is highly regions insulating. That is, a region containing GaO X3 or the like as a main component is distributed in the oxide semiconductor, whereby leakage current can be suppressed and good switching operation can be realized.
- CAC-OS when CAC-OS is used for a semiconductor element, the insulating property caused by GaO X3 and the like and the conductivity caused by In X2 Zn Y2 O Z2 or InO X1 act complementarily, thereby increasing the An on-current (I on ) and high field effect mobility ( ⁇ ) can be realized.
- CAC-OS is suitable as a constituent material for various semiconductor devices.
- the high potential is represented by “H” and the low potential is represented by “L”.
- the image data supplied when writing to the pixels in the first row is “D1”, and the image data supplied when writing to the pixels in the second row is “D2”.
- the data is “D3”.
- V ref for example, 0 V, a GND potential, or a specific reference potential can be used.
- the potential of the wiring 123 is set to “H”
- the potential of the wiring 124 is set to “L”
- the transistor 108 is turned on so that “D1” is supplied to the wiring 125 [m].
- the transistor 102 is turned on in the pixel 10 [n, m], and the potential of one electrode of the capacitor 104 becomes “V ref ”. .
- This operation is a reset operation for performing a later addition operation (capacitive coupling operation).
- the transistor 103 is turned on, and the potential of the wiring 125 [m] is written to the node NM [n, m]. This operation is the first write operation, and the potential of the node NM [n, m] is “D1”.
- the potential of the wiring 123 is set to “L”
- the potential of the wiring 124 is set to “H”
- the wiring 125 [m] is floated, and “D1” is held.
- the transistor 107 is turned on so that “D2” is supplied to the wiring 126 [m].
- the transistor 101 is turned on in the pixel 10 [n, m], and the potential of the node NM [n, m] is coupled by the capacitive coupling of the capacitor 104.
- the potential “D1” held in the wiring 125 [m] is added to This operation is the second write operation, and the potential of the node NM [n, m] is “D1 ⁇ V ref + D1”.
- V ref 0, the potential of the node NM [n, m] is “D1 + D1”. That is, the data supplied and held in the source line can be added within the pixel.
- the transistor 102 is turned on, and the potential of one electrode of the capacitor 104 is “V ref ”.
- the transistor 103 is turned on, and the potential of the wiring 126 [m] is written to the node NM [n + 1, m]. This operation is the first write operation, and the potential of the node NM [n + 1, m] is “D2”.
- the potential of the wiring 123 is set to “H”
- the potential of the wiring 124 is set to “L”
- the wiring 126 is floated, and “D2” is held.
- the transistor 108 is turned on so that “D3” is supplied to the wiring 125 [m].
- the transistor 102 is turned on, and the potential of one electrode of the capacitor 104 is “V ref ”.
- the transistor 103 is turned on, and the potential of the wiring 125 [m] is written to the node NM [n + 2, m]. This operation is the first write operation, and the potential of the node NM [n + 2, m] is “D3”.
- the operation of adding two pieces of image data can be performed at high speed.
- a potential higher than the maximum output voltage of the source driver can be supplied to the display element, which can contribute to an improvement in display luminance and an expansion of the dynamic range.
- the output voltage of the source driver can be halved, and power consumption can be reduced.
- One embodiment of the present invention is also suitable for a field sequential liquid crystal display device that requires high-speed operation.
- 4A to 4C are examples of a structure which can be applied to the circuit block 110 and includes an EL element as a display element.
- the structure illustrated in FIG. 4A includes a transistor 111, a capacitor 113, and an EL element 114.
- One of a source and a drain of the transistor 111 is electrically connected to one electrode of the EL element 114.
- One electrode of the EL element 114 is electrically connected to one electrode of the capacitor 113.
- the other electrode of the capacitor 113 is electrically connected to the gate of the transistor 111.
- the gate of the transistor 111 is electrically connected to the node NM.
- the other of the source and the drain of the transistor 111 is electrically connected to the wiring 128.
- the other electrode of the EL element 114 is electrically connected to the wiring 129.
- the wirings 128 and 129 have a function of supplying power.
- the wiring 128 can supply high potential power.
- the wiring 129 can supply low potential power.
- the other of the source and the drain of the transistor 102 for supplying “V ref ” illustrated in FIG. 2 can be electrically connected to the wiring 128. Since “V ref ” is preferably 0 V, GND, or a low potential, the wiring 128 also has a function of supplying at least one of those potentials. The wiring 128 may be supplied with “V ref ” at the timing of writing data to the node NM and supplied with high potential power at the timing of causing the EL element 114 to emit light. Note that the other of the source and the drain of the transistor 102 may be electrically connected to a common wiring that supplies “V ref ”.
- the EL element 114 may start to emit light at the first writing stage shown in the timing chart of FIG. 3, and the application may be limited.
- FIG. 4B illustrates a structure in which the transistor 112 is added to the structure in FIG.
- One of the source and the drain of the transistor 112 is electrically connected to one of the source and the drain of the transistor 111.
- the other of the source and the drain of the transistor 112 is electrically connected to the EL element 114.
- a gate of the transistor 112 is electrically connected to the wiring 127.
- the wiring 127 can function as a signal line for controlling conduction of the transistor 112.
- FIG. 4C illustrates a structure in which the transistor 115 is added to the structure in FIG.
- One of the source and the drain of the transistor 115 is electrically connected to one of the source and the drain of the transistor 111.
- the other of the source and the drain of the transistor 115 is electrically connected to the wiring 130.
- a gate of the transistor 115 is electrically connected to the wiring 131.
- the wiring 131 can function as a signal line for controlling conduction of the transistor 115.
- the wiring 130 can be electrically connected to a supply source of a specific potential such as a reference potential. By supplying a specific potential from the wiring 130 to one of the source and the drain of the transistor 111, writing of image data can be stabilized.
- the wiring 130 can be connected to the circuit 120 and can function as a monitor line.
- the circuit 120 can have one or more of a supply source of the specific potential, a function of acquiring electrical characteristics of the transistor 111, and a function of generating correction data.
- 5A to 5C are examples of a structure which can be applied to the circuit block 110 and includes a liquid crystal element as a display element.
- the structure illustrated in FIG. 5A includes the capacitor 116 and the liquid crystal element 117.
- One electrode of the liquid crystal element 117 is electrically connected to one electrode of the capacitor 116.
- One electrode of the capacitor 116 is electrically connected to the node NM.
- the other electrode of the capacitor 116 is electrically connected to the wiring 132.
- the other electrode of the liquid crystal element 117 is electrically connected to the wiring 133.
- the wirings 132 and 133 have a function of supplying power.
- the wirings 132 and 133 can supply a reference potential such as GND or 0 V or an arbitrary potential.
- the other of the source and the drain of the transistor 102 for supplying “V ref ” illustrated in FIG. 2 can be electrically connected to the wiring 132.
- the other of the source and the drain of the transistor 102 may be electrically connected to a common wiring that supplies “V ref ”.
- the operation of the liquid crystal element 117 is started when the potential of the node NM becomes equal to or higher than the operation threshold value of the liquid crystal element 117. Therefore, the display operation may start at the first writing stage shown in the timing chart of FIG. 3, and the application may be limited. However, in the case of a transmissive liquid crystal display device, visual recognition is suppressed even when an unnecessary display operation is performed by using an operation such as turning off the backlight until the second writing shown in the timing chart of FIG. can do.
- FIG. 5B illustrates a structure in which a transistor 118 is added to the structure in FIG.
- One of a source and a drain of the transistor 118 is electrically connected to one electrode of the capacitor 116.
- the other of the source and the drain of the transistor 118 is electrically connected to the node NM.
- a gate of the transistor 118 is electrically connected to the wiring 127.
- the wiring 127 can function as a signal line for controlling conduction of the transistor 118.
- the potential of the node NM is applied to the liquid crystal element 117 when the transistor 118 is turned on. Accordingly, the operation of the liquid crystal element can be started after the second writing in the timing chart shown in FIG.
- a reset potential may be supplied to the source line (the wiring 125 or the wiring 126) to which the pixel is connected, so that the transistor 102 and the transistor 118 are turned on at the same time.
- FIG. 5C illustrates a structure in which a transistor 119 is added to the structure in FIG.
- One of a source and a drain of the transistor 119 is electrically connected to one electrode of the liquid crystal element 117.
- the other of the source and the drain of the transistor 119 is electrically connected to the wiring 130.
- a gate of the transistor 119 is electrically connected to the wiring 131.
- the wiring 131 can function as a signal line for controlling conduction of the transistor 119.
- the circuit 120 which is electrically connected to the wiring 130 is similar to the description in FIG. 4C described above, and may have a function of resetting the potential supplied to the capacitor 116 and the liquid crystal element 117. Good.
- V ref is supplied from the power supply line
- it can also be supplied from the gate line.
- V ref may be supplied from the wiring 121 in the pixel 10 [n, m].
- the potential corresponding to “L” is supplied to the wiring 121 [n + 1] when “D1” is written (when the transistor 103 is turned on)
- the potential is used as “V ref ”. can do.
- the transistors 101, 102, and 103 may have a structure in which a back gate is provided.
- FIG. 6B illustrates a structure in which the back gate is electrically connected to the front gate, which has an effect of increasing the on-state current.
- FIG. 6C illustrates a structure in which the back gate is electrically connected to the wiring 134 capable of supplying a constant potential, and the threshold voltage of the transistor can be controlled. Note that a back gate may be provided for the transistor included in the circuit block 110 illustrated in FIGS. 4A to 4C and FIGS. 5A to 5C.
- a display device including a pixel that holds data in a source line and uses the data for an addition operation may have a configuration illustrated in FIG.
- the basic configuration of the pixel is the same as that of the display device shown in FIG. 2, except that there are one source line per column and two gate lines per row. .
- a circuit 14 is provided instead of the circuit 11.
- a wiring 121 and a wiring 122 are provided.
- the wiring 121 is electrically connected to the gate of the transistor 102 and the gate of the transistor 103.
- the gate of the transistor 101 is electrically connected to the wiring 122.
- the circuit 14 includes a transistor 109.
- a gate of the transistor 109 is electrically connected to the wiring 123.
- One of a source and a drain of the transistor 109 is electrically connected to the wiring 125 (source line), and the other of the source and the drain is electrically connected to the source driver 12. Therefore, image data (DATA) can be supplied to or held in the wiring 125 by controlling the conduction of the transistor 109.
- DATA image data
- the first writing is performed when image data is supplied to the source line
- the second writing is performed when image data is held in the source line.
- the writing speed cannot be improved by the parallel operation.
- power gating can be performed in the output circuit in the source driver, and power consumption due to leakage current or the like can be reduced.
- the potential of the wiring 123 is set to “H”, and the transistor 109 is turned on so that “D1” is supplied to the wiring 125 [m].
- the transistor 103 is turned on in the pixel 10 [n, m], and the potential of one electrode of the capacitor 104 becomes “V ref ”. .
- This operation is a reset operation for performing a later addition operation (capacitive coupling operation).
- the transistor 102 is turned on, and the potential of the wiring 125 [m] is written to the node NM [n, m].
- This operation is the first write operation, and the potential of the node NM [n, m] is “D1”.
- the transistor 101 When the potential of the wiring 122 [n] is set to “H” at time T2, the transistor 101 is turned on in the pixel 10 [n, m], and the wiring is connected to the potential of the node NM [n, m] due to capacitive coupling of the capacitor 104.
- the potential “D1” held at 125 [m] is added.
- This operation is the second write operation, and the potential of the node NM [n, m] is “D1 ⁇ V ref + D1”.
- V ref ” 0, the potential of the node NM [n, m] is “D1 + D1”. That is, the data supplied and held in the source line can be added within the pixel.
- image data (DATA) is written to the pixels 10 in the subsequent rows by repeating the same operation as described above.
- the parameters are as follows.
- the capacitance value of the capacitive element Csl is 100 pF (equivalent to 1000 capacitive elements of 100 fF connected to the source line), the capacitive value of the capacitive element C1 is 500 fF, the capacitive value of the capacitive element Cs is 100 fF, and the liquid crystal element
- the capacitance value of Clc was 40 fF, the image data (DATA) was 5 V at maximum, “V ref ” was 0 V, and the common electrodes Cs
- FIG. 11 shows a simulation result when the circuit shown in FIG. 9 is operated according to the timing chart shown in FIG. SMP1 and SMP2 are gate lines that control the operation of the circuit 11.
- SL1 is a source line connected to the pixel 10 [n]
- SL2 is a source line connected to the pixel 10 [n + 1].
- GL [n] is a gate line connected to the pixel 10 [n]
- GL [n + 2] is a gate line connected to the pixel 10 [n + 1]
- GL [n + 1] is connected to the pixel 10 [n] and the pixel 10 [n + 1]. It is a gate line to do.
- D1 corresponds to image data (DATA) supplied to the pixel 10 [n]
- D2 corresponds to image data (DATA) supplied to the pixel 10 [n + 1]
- D3 corresponds to the pixel 10 [n + 2] (not shown). This corresponds to supplied image data (DATA).
- FIG. 11 shows simulation results of voltages at the node NM [n] and the node NM [n + 1] when +5 V is input as image data (DATA).
- the first writing is performed at a timing when GL [n] is set to “H”
- the second writing is performed at a timing when GL [n + 1] is set to “H”. It was confirmed that (DATA) was added. The same applies to the node NM [n + 1].
- FIG. 12 shows simulation results of voltages at the node NM [n] and the node NM [n + 1] when -5V to + 5V is input as image data (DATA). In either case, it was confirmed that image data (DATA) was added.
- the potential held in the capacity of the source line can be applied as the data voltage to the pixel.
- the writing period from the source driver to the pixel can be substantially once in one horizontal period; therefore, the display device is preferably applied to a display device that requires high-speed operation.
- Embodiment 2 In this embodiment, a structure example of a display element using a liquid crystal element and a structure example of a display device using an EL element will be described. Note that in this embodiment, description of elements, operations, and functions of the display device described in Embodiment 1 is omitted.
- FIG. 13A to 13C illustrate the structure of a display device in which one embodiment of the present invention can be used.
- a sealant 4005 is provided so as to surround the display portion 215 provided over the first substrate 4001, and the display portion 215 is sealed with the sealant 4005 and the second substrate 4006. .
- the display portion 215 can be provided with the pixel 10 or the like described in Embodiment 1. Note that a scanning line driver circuit described below corresponds to a gate driver, and a signal line driver circuit corresponds to a source driver.
- the scan line driver circuit 221a, the signal line driver circuit 231a, the signal line driver circuit 232a, and the common line driver circuit 241a each include a plurality of integrated circuits 4042 provided over the printed board 4041.
- the integrated circuit 4042 is formed using a single crystal semiconductor or a polycrystalline semiconductor.
- the common line driver circuit 241a has a function of supplying a predetermined potential to the wirings 128, 129, 132, 133, 135, and the like described in Embodiment 1.
- An integrated circuit 4042 included in the scan line driver circuit 221 a and the common line driver circuit 241 a has a function of supplying a selection signal to the display portion 215.
- the integrated circuit 4042 included in the signal line driver circuit 231a and the signal line driver circuit 232a has a function of supplying image data to the display portion 215.
- the integrated circuit 4042 is mounted in a region different from the region surrounded by the sealant 4005 over the first substrate 4001.
- connection method of the integrated circuit 4042 is not particularly limited, and a wire bonding method, a COG (Chip On Glass) method, a TCP (Tape Carrier Package) method, a COF (Chip On Film) method, or the like can be used. it can.
- FIG. 13B illustrates an example in which the integrated circuit 4042 included in the signal line driver circuit 231a and the signal line driver circuit 232a is mounted by a COG method.
- a part of or the entire driver circuit can be formed over the same substrate as the display portion 215 to form a system-on-panel.
- FIG. 13B illustrates an example in which the scan line driver circuit 221a and the common line driver circuit 241a are formed over the same substrate as the display portion 215.
- a sealant 4005 is provided so as to surround the display portion 215 provided over the first substrate 4001, the scan line driver circuit 221a, and the common line driver circuit 241a.
- a second substrate 4006 is provided over the display portion 215, the scan line driver circuit 221a, and the common line driver circuit 241a. Therefore, the display portion 215, the scan line driver circuit 221a, and the common line driver circuit 241a are sealed together with the display element by the first substrate 4001, the sealant 4005, and the second substrate 4006.
- FIG. 13B illustrates an example in which the signal line driver circuit 231a and the signal line driver circuit 232a are separately formed and mounted on the first substrate 4001, but the present invention is not limited to this structure.
- a scan line driver circuit or a common line driver circuit may be separately formed and mounted. Further, part of the signal line driver circuit, part of the scan line driver circuit, or part of the common line driver circuit may be separately formed and mounted.
- the signal line driver circuit 231a and the signal line driver circuit 232a may be formed over the same substrate as the display portion 215.
- the display device includes a panel in which the display element is sealed, and a module in which an IC including a controller or the like is mounted on the panel.
- the display portion and the scan line driver circuit provided over the first substrate include a plurality of transistors.
- the transistor described in any of the above embodiments can be used as the transistor.
- the transistor included in the peripheral driver circuit and the transistor included in the pixel circuit in the display portion may have the same structure or different structures.
- the transistors included in the peripheral driver circuit may all have the same structure, or may have two or more types of transistors.
- the transistors included in the pixel circuit may all have the same structure or may have two or more types of transistors.
- An input device can be provided over the second substrate 4006.
- the structure in which the input device 4200 is provided in the display device illustrated in FIGS. 13A to 13C can function as a touch panel.
- a detection element also referred to as a sensor element
- Various sensors that can detect the proximity or contact of an object to be detected, such as a finger or a stylus, can be applied as the detection element.
- a sensor method for example, various methods such as a capacitance method, a resistance film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure-sensitive method can be used.
- a touch panel having a capacitive detection element will be described as an example.
- Examples of the electrostatic capacity method include a surface electrostatic capacity method and a projection electrostatic capacity method.
- examples of the projected capacitance method include a self-capacitance method and a mutual capacitance method. The mutual capacitance method is preferable because simultaneous multipoint detection is possible.
- the touch panel of one embodiment of the present invention includes a structure in which a separately manufactured display device and a detection element are attached, a structure in which an electrode that forms the detection element is provided on one or both of a substrate that supports the display element and a counter substrate, and the like Various configurations can be applied.
- FIGS. 14A and 14B show an example of a touch panel.
- FIG. 14A is a perspective view of the touch panel 4210.
- FIG. 14B is a schematic perspective view of the input device 4200. For the sake of clarity, only representative components are shown.
- the touch panel 4210 has a structure in which a separately manufactured display device and a detection element are bonded to each other.
- the touch panel 4210 includes an input device 4200 and a display device, which are provided to overlap each other.
- the input device 4200 includes a substrate 4263, an electrode 4227, an electrode 4228, a plurality of wirings 4237, a plurality of wirings 4238, and a plurality of wirings 4239.
- the electrode 4227 can be electrically connected to the wiring 4237 or the wiring 4239.
- the electrode 4228 can be electrically connected to the wiring 4239.
- the FPC 4272b is electrically connected to each of the plurality of wirings 4237, the plurality of wirings 4238, and the plurality of wirings 4239.
- the FPC 4272b can be provided with an IC 4273b.
- a touch sensor may be provided between the first substrate 4001 and the second substrate 4006 of the display device.
- a touch sensor is provided between the first substrate 4001 and the second substrate 4006, an optical touch sensor using a photoelectric conversion element may be used in addition to a capacitive touch sensor.
- FIGS. 15A and 15B are cross-sectional views of a portion indicated by a chain line N1-N2 in FIG. 13B.
- the display device illustrated in FIGS. 15A and 15B includes an electrode 4015, and the electrode 4015 is electrically connected to a terminal included in the FPC 4018 through an anisotropic conductive layer 4019.
- the electrode 4015 is electrically connected to the wiring 4014 in the opening formed in the insulating layer 4112, the insulating layer 4111, and the insulating layer 4110.
- the electrode 4015 is formed using the same conductive layer as the first electrode layer 4030, and the wiring 4014 is formed using the same conductive layer as the source electrode and the drain electrode of the transistor 4010 and the transistor 4011.
- the display portion 215 and the scan line driver circuit 221a provided over the first substrate 4001 include a plurality of transistors.
- the transistor 4010 included in the display portion 215 is included.
- a transistor 4011 included in the scan line driver circuit 221a is included.
- 15A and 15B illustrate bottom-gate transistors as the transistor 4010 and the transistor 4011, a top-gate transistor may be used.
- an insulating layer 4112 is provided over the transistors 4010 and 4011.
- a partition wall 4510 is formed over the insulating layer 4112.
- the transistor 4010 and the transistor 4011 are provided over the insulating layer 4102.
- the transistor 4010 and the transistor 4011 include an electrode 4017 formed over the insulating layer 4111.
- the electrode 4017 can function as a back gate electrode.
- the display device illustrated in FIGS. 15A and 15B includes a capacitor 4020.
- the capacitor 4020 includes an electrode 4021 formed in the same step as the gate electrode of the transistor 4010 and an electrode formed in the same step as the source electrode and the drain electrode. Each electrode overlaps with the insulating layer 4103 interposed therebetween.
- the capacitance of a capacitor provided in the pixel portion of the display device is set so that charge can be held for a predetermined period in consideration of leakage current of a transistor arranged in the pixel portion.
- the capacity of the capacitor may be set in consideration of the off-state current of the transistor.
- FIG. 15A illustrates an example of a liquid crystal display device using a liquid crystal element as a display element.
- a liquid crystal element 4013 which is a display element includes a first electrode layer 4030, a second electrode layer 4031, and a liquid crystal layer 4008.
- an insulating layer 4032 and an insulating layer 4033 which function as alignment films are provided so as to sandwich the liquid crystal layer 4008.
- the second electrode layer 4031 is provided on the second substrate 4006 side, and the first electrode layer 4030 and the second electrode layer 4031 overlap with each other with the liquid crystal layer 4008 interposed therebetween.
- the spacer 4035 is a columnar spacer obtained by selectively etching the insulating layer, and is provided to control the distance (cell gap) between the first electrode layer 4030 and the second electrode layer 4031. ing. A spherical spacer may be used.
- an optical member such as a black matrix (light-shielding layer), a colored layer (color filter), a polarizing member, a retardation member, or an antireflection member may be provided as appropriate.
- an optical member such as a black matrix (light-shielding layer), a colored layer (color filter), a polarizing member, a retardation member, or an antireflection member
- circularly polarized light using a polarizing substrate and a retardation substrate may be used.
- a backlight, a sidelight, or the like may be used as the light source.
- a micro LED or the like may be used as the backlight and the sidelight.
- a light-blocking layer 4132, a colored layer 4131, and an insulating layer 4133 are provided between the second substrate 4006 and the second electrode layer 4031.
- the material that can be used for the light-shielding layer include carbon black, titanium black, metal, metal oxide, and composite oxide containing a solid solution of a plurality of metal oxides.
- the light shielding layer may be a film containing a resin material or a thin film of an inorganic material such as a metal.
- a stacked film of a film containing a material for the colored layer can be used for the light shielding layer.
- a stacked structure of a film including a material used for a colored layer that transmits light of a certain color and a film including a material used for a colored layer that transmits light of another color can be used. It is preferable to use a common material for the coloring layer and the light-shielding layer because the apparatus can be shared and the process can be simplified.
- Examples of materials that can be used for the colored layer include metal materials, resin materials, resin materials containing pigments or dyes, and the like.
- the light shielding layer and the colored layer can be formed using, for example, an inkjet method.
- the display device illustrated in FIGS. 15A and 15B includes an insulating layer 4111 and an insulating layer 4104.
- As the insulating layer 4111 and the insulating layer 4104 insulating layers that hardly transmit an impurity element are used. By sandwiching the semiconductor layer of the transistor between the insulating layer 4111 and the insulating layer 4104, entry of impurities from the outside can be prevented.
- a light-emitting element using electroluminescence can be used as a display element included in the display device.
- An EL element includes a layer containing a light-emitting compound (also referred to as an “EL layer”) between a pair of electrodes. When a potential difference larger than the threshold voltage of the EL element is generated between the pair of electrodes, holes are injected into the EL layer from the anode side and electrons are injected from the cathode side. The injected electrons and holes are recombined in the EL layer, and a light-emitting compound contained in the EL layer emits light.
- the EL element is distinguished depending on whether the light emitting material is an organic compound or an inorganic compound, and the former is generally called an organic EL element and the latter is called an inorganic EL element.
- the organic EL element by applying a voltage, electrons from one electrode and holes from the other electrode are injected into the EL layer. Then, these carriers (electrons and holes) recombine, whereby the light-emitting organic compound forms an excited state, and emits light when the excited state returns to the ground state. Due to such a mechanism, such a light-emitting element is referred to as a current-excitation light-emitting element.
- the EL layer includes a substance having a high hole-injecting property, a substance having a high hole-transporting property, a hole blocking material, a substance having a high electron-transporting property, a substance having a high electron-injecting property, or a bipolar Material (a material having a high electron transporting property and a high hole transporting property) may be included.
- the EL layer can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an ink jet method, or a coating method.
- Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure.
- the dispersion-type inorganic EL element has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and the light emission mechanism is donor-acceptor recombination light emission using a donor level and an acceptor level.
- the thin-film inorganic EL element has a structure in which a light emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes, and the light emission mechanism is localized light emission utilizing inner-shell electron transition of metal ions. Note that description is made here using an organic EL element as a light-emitting element.
- At least one of the pair of electrodes may be transparent. Then, a transistor and a light emitting element are formed over the substrate, and a top emission structure that extracts light from a surface opposite to the substrate, a bottom emission structure that extracts light from a surface on the substrate side, There is a light emitting element having a dual emission structure in which light emission is extracted from both sides, and any light emitting element having an emission structure can be applied.
- FIG. 15B illustrates an example of a light-emitting display device (also referred to as an “EL display device”) using a light-emitting element as a display element.
- a light-emitting element 4513 which is a display element is electrically connected to a transistor 4010 provided in the display portion 215.
- the structure of the light-emitting element 4513 is a stacked structure of the first electrode layer 4030, the light-emitting layer 4511, and the second electrode layer 4031; however, the structure is not limited to this structure.
- the structure of the light-emitting element 4513 can be changed as appropriate depending on the direction in which light is extracted from the light-emitting element 4513, or the like.
- a partition wall 4510 is formed using an organic insulating material or an inorganic insulating material.
- a photosensitive resin material it is preferable to use a photosensitive resin material and form an opening on the first electrode layer 4030 so that the side surface of the opening is an inclined surface formed with a continuous curvature.
- the light emitting layer 4511 may be composed of a single layer or a plurality of layers stacked.
- the light emission color of the light emitting element 4513 can be white, red, green, blue, cyan, magenta, yellow, or the like depending on the material forming the light emitting layer 4511.
- a method for realizing color display there are a method in which a light emitting element 4513 having a white emission color and a colored layer are combined, and a method in which a light emitting element 4513 having a different emission color is provided for each pixel.
- the former method is more productive than the latter method.
- productivity is inferior to the former method.
- the latter method it is possible to obtain an emission color with higher color purity than in the former method.
- the color purity can be further increased by providing the light-emitting element 4513 with a microcavity structure.
- the light-emitting layer 4511 may include an inorganic compound such as a quantum dot.
- a quantum dot can be used for a light emitting layer to function as a light emitting material.
- a protective layer may be formed over the second electrode layer 4031 and the partition wall 4510 so that oxygen, hydrogen, moisture, carbon dioxide, or the like does not enter the light-emitting element 4513.
- the protective layer silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, DLC (Diamond-Like Carbon), or the like can be formed.
- a filler 4514 is provided and sealed in a space sealed by the first substrate 4001, the second substrate 4006, and the sealant 4005.
- the protective film As described above, it is preferable to package (enclose) the protective film with a protective film (bonded film, ultraviolet curable resin film, or the like) or a cover material that has high hermeticity and little degassing so as not to be exposed to the outside air.
- a protective film bonded film, ultraviolet curable resin film, or the like
- a cover material that has high hermeticity and little degassing so as not to be exposed to the outside air.
- an ultraviolet curable resin or a thermosetting resin can be used as the filler 4514.
- PVC polyvinyl chloride
- acrylic resin polyimide
- epoxy resin epoxy resin
- silicone resin PVB polyvinyl butyral
- EVA ethylene vinyl acetate
- the filler 4514 may contain a desiccant.
- the sealant 4005 a glass material such as glass frit, or a resin material such as a two-component mixed resin, a curable resin that cures at normal temperature, a photocurable resin, or a thermosetting resin can be used. Further, the sealing material 4005 may contain a desiccant.
- an optical film such as a polarizing plate, a circularly polarizing plate (including an elliptical polarizing plate), a retardation plate ( ⁇ / 4 plate, ⁇ / 2 plate), a color filter, or the like is provided on the emission surface of the light emitting element. You may provide suitably.
- an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be performed that diffuses reflected light due to surface irregularities and reduces reflection.
- the light-emitting element has a microcavity structure
- light with high color purity can be extracted.
- the reflection can be reduced and the visibility of the display image can be improved.
- first electrode layer and the second electrode layer (also referred to as a pixel electrode layer, a common electrode layer, a counter electrode layer, and the like) that apply a voltage to the display element, a direction of light to be extracted, a place where the electrode layer is provided, and What is necessary is just to select translucency and reflectivity by the pattern structure of an electrode layer.
- the first electrode layer 4030 and the second electrode layer 4031 include indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide, and indium containing titanium oxide.
- a light-transmitting conductive material such as tin oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added can be used.
- the first electrode layer 4030 and the second electrode layer 4031 are tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), and tantalum (Ta). , Chromium (Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), silver (Ag) and other metals, or alloys thereof, or One or more metal nitrides can be used.
- the first electrode layer 4030 and the second electrode layer 4031 can be formed using a conductive composition including a conductive high molecule (also referred to as a conductive polymer).
- a conductive high molecule also referred to as a conductive polymer.
- a so-called ⁇ -electron conjugated conductive polymer can be used.
- polyaniline or a derivative thereof, polypyrrole or a derivative thereof, polythiophene or a derivative thereof, a copolymer of two or more of aniline, pyrrole, and thiophene or a derivative thereof can be given.
- the protection circuit is preferably configured using a non-linear element.
- FIG. 16 illustrates an example in which the stack structure is applied to the liquid crystal display device illustrated in FIG. 15A; however, the stack structure may be applied to an EL display device illustrated in FIG.
- the light transmittance in the pixel can be increased, and the aperture ratio is substantially improved. Can be made.
- the semiconductor layer also has a light-transmitting property, so that the aperture ratio can be further increased.
- a display device may be configured by combining a liquid crystal display device and a light-emitting device.
- the light emitting device is disposed on the opposite side of the display surface or on the end of the display surface.
- the light-emitting device has a function of supplying light to the display element.
- the light emitting device can also be called a backlight.
- the light-emitting device can include a plate-shaped or sheet-shaped light guide (also referred to as a light guide plate) and a plurality of light-emitting elements that exhibit light of different colors.
- a plate-shaped or sheet-shaped light guide also referred to as a light guide plate
- a plurality of light-emitting elements that exhibit light of different colors.
- the light guide unit has a mechanism for changing an optical path (also referred to as a light extraction mechanism), whereby the light emitting device can uniformly irradiate light to the pixel portion of the display panel. Or it is good also as a structure which arrange
- the light-emitting device preferably has three color light-emitting elements of red (R), green (G), and blue (B). Further, a white (W) light emitting element may be included. It is preferable to use a light emitting diode (LED: Light Emitting Diode) as these light emitting elements.
- LED Light Emitting Diode
- the light emitting element has a full width at half maximum (FWHM: Full Width at Half Maximum) of 50 nm or less, preferably 40 nm or less, more preferably 30 nm or less, and further preferably 20 nm or less, and extremely high color purity.
- FWHM Full Width at Half Maximum
- a light emitting element is preferable.
- the full width at half maximum of the emission spectrum is preferably as small as possible, but can be set to, for example, 1 nm or more. Thereby, when performing color display, vivid display with high color reproducibility can be performed.
- an element having an emission spectrum peak wavelength in the range of 625 nm to 650 nm is preferably used.
- an element having an emission spectrum peak wavelength in the range of 515 nm to 540 nm is preferably used.
- an element having an emission spectrum peak wavelength in the range of 445 nm to 470 nm is preferably used.
- the display device can perform color display based on the successive additive color mixing method by sequentially flashing the light emitting elements of the three colors and driving the pixels in synchronization therewith.
- This driving method can also be called field sequential driving.
- a vivid color image can be displayed.
- a smooth moving image can be displayed.
- the effective reflection area also referred to as an effective display area or aperture ratio
- Display can be made.
- the transmittance of the pixel can be improved, and a brighter display can be performed. Further, the manufacturing process can be simplified and the manufacturing cost can be reduced.
- 17A and 17B are examples of a schematic cross-sectional view of a display device capable of field sequential driving.
- a backlight unit capable of emitting light of RGB colors is provided on the substrate 4001 side of the display device.
- colors are expressed by time-division light emission of each color of RGB, so that a color filter is not necessary.
- a backlight unit 4340a illustrated in FIG. 17A has a structure in which a plurality of light-emitting elements 4342 are provided directly below a pixel with a diffusion plate 4352 interposed therebetween.
- the diffusion plate 4352 has a function of diffusing light emitted from the light emitting element 4342 to the substrate 4001 side and uniformizing the luminance in the display portion surface.
- a polarizing plate may be provided between the light emitting element 4342 and the diffusion plate 4352 as necessary. Further, the diffusion plate 4352 may be omitted if unnecessary. Alternatively, the light-blocking layer 4132 may be omitted.
- the backlight unit 4340a can be disposed immediately below the display portion, a large number of light-emitting elements 4342 can be mounted, and a bright display can be achieved. In addition, there is an advantage that a light guide plate is unnecessary and the light efficiency of the light emitting element 4342 is hardly impaired. Note that a light diffusion lens 4344 may be provided in the light-emitting element 4342 as necessary.
- a backlight unit 4340b illustrated in FIG. 17B has a structure in which a light guide plate 4341 is provided directly below a pixel through a diffusion plate 4352.
- a plurality of light emitting elements 4342 are provided at the end of the light guide plate 4341.
- the light guide plate 4341 has a concavo-convex shape on the opposite side to the diffusion plate 4352, and the guided light can be scattered in the concavo-convex shape and emitted in the direction of the diffusion plate 4352.
- the light emitting element 4342 can be fixed to the printed circuit board 4347. Note that in FIG. 17B, the light-emitting elements 4342 of each RGB color are illustrated so as to overlap each other, but the light-emitting elements 4342 of each RGB color may be arranged in the depth direction.
- a reflective layer 4348 that reflects visible light may be provided on a side surface opposite to the light emitting element 4342.
- the backlight unit 4340b can reduce the number of light-emitting elements 4342, and thus can be reduced in cost and thickness.
- a light scattering liquid crystal element may be used as the liquid crystal element.
- the light scattering liquid crystal element an element having a composite material of liquid crystal and a polymer is preferably used.
- a polymer dispersed liquid crystal (PDLC (Polymer Dispersed Liquid Crystal)) element can be used.
- PDLC Polymer Dispersed Liquid Crystal
- PNLC Polymer Network Liquid Crystal
- the light scattering liquid crystal element has a structure in which a liquid crystal part is provided in a three-dimensional network structure of a resin part sandwiched between a pair of electrodes.
- a material used for the liquid crystal part for example, nematic liquid crystal can be used.
- a photocuring resin can be used as the resin portion.
- the photocurable resin for example, a monofunctional monomer such as acrylate or methacrylate, a polyfunctional monomer such as diacrylate, triacrylate, dimethacrylate, or trimethacrylate, or a polymerizable compound obtained by mixing them can be used.
- a light-scattering liquid crystal element performs display by transmitting or scattering light by utilizing the anisotropy of the refractive index of a liquid crystal material.
- the resin part may also have anisotropy in refractive index.
- the difference in the refractive index between the liquid crystal part and the resin part does not change significantly, so that incident light is scattered by the liquid crystal part. Therefore, the light scattering liquid crystal element is in an opaque state regardless of the viewing direction.
- FIG. 18A illustrates a structure in which the liquid crystal element 4013 of the display device in FIG. 17A is replaced with a light-scattering liquid crystal element 4016.
- the light scattering liquid crystal element 4016 includes a composite layer 4009 having a liquid crystal portion and a resin portion, and electrode layers 4030 and 4031.
- the elements relating to the field sequential driving are the same as those in FIG. 17A. However, when the light scattering liquid crystal element 4016 is used, an alignment film and a polarizing plate are not necessary.
- the spacer 4035 is illustrated in a spherical shape, but may be a columnar shape.
- FIG. 18B illustrates a structure in which the liquid crystal element 4013 in the display device in FIG. 17B is replaced with a light-scattering liquid crystal element 4016.
- a transparent display device can be obtained in a normal state (a state where no display is performed). In this case, color display can be performed when an operation of scattering light is performed.
- FIGS. 18B Variations of the display device illustrated in FIG. 18B are illustrated in FIGS. Note that in FIGS. 19A to 19E, for the sake of clarity, some elements in FIG. 18B are used and other elements are omitted.
- FIG. 19A illustrates a structure in which the substrate 4001 functions as a light guide plate.
- An uneven shape may be provided on the outer surface of the substrate 4001. In this configuration, it is not necessary to separately provide a light guide plate, so that manufacturing costs can be reduced. Further, light attenuation by the light guide plate is eliminated, so that light emitted from the light emitting element 4342 can be efficiently used.
- FIG. 19B illustrates a structure in which light enters from the vicinity of the end portion of the composite layer 4009. Light can be emitted from the light-scattering liquid crystal element to the outside using total reflection at the interface between the composite layer 4009 and the substrate 4006 and the interface between the composite layer 4009 and the substrate 4001. A material having a higher refractive index than those of the substrate 4001 and the substrate 4006 is used for the resin portion of the composite layer 4009.
- the light-emitting element 4342 may be provided not only on one side of the display device but also on two opposite sides as illustrated in FIG. Furthermore, you may provide in three sides or four sides. By providing the light-emitting element 4342 on a plurality of sides, attenuation of light can be compensated for, and a display element with a large area can be dealt with.
- FIG. 19D illustrates a structure in which light emitted from the light-emitting element 4342 is guided to the display device through the mirror 4345.
- FIG. 19E illustrates a structure in which a layer 4003 and a layer 4004 are stacked over the composite layer 4009.
- One of the layers 4003 and 4004 is a support such as a glass substrate, and the other can be formed using an inorganic film, a coating film of an organic resin, a film, or the like.
- a material having a higher refractive index than the layer 4004 is used for the resin portion of the composite layer 4009.
- a material having a higher refractive index than the layer 4003 is used for the layer 4004.
- a first interface is formed between the composite layer 4009 and the layer 4004, and a second interface is formed between the layer 4004 and the layer 4003.
- FIGS. 18B and 19A to 19E can be combined with each other.
- the display device of one embodiment of the present invention can be manufactured using various types of transistors such as a bottom-gate transistor and a top-gate transistor. Therefore, the semiconductor layer material and the transistor structure to be used can be easily replaced in accordance with an existing production line.
- FIG. 20A1 is a cross-sectional view in the channel length direction of a channel protection transistor 810 which is a kind of bottom-gate transistor.
- the transistor 810 is formed over a substrate 771.
- the transistor 810 includes an electrode 746 over the substrate 771 with an insulating layer 772 interposed therebetween.
- a semiconductor layer 742 is provided over the electrode 746 with an insulating layer 726 interposed therebetween.
- the electrode 746 can function as a gate electrode.
- the insulating layer 726 can function as a gate insulating layer.
- the insulating layer 741 is provided over the channel formation region of the semiconductor layer 742. Further, an electrode 744 a and an electrode 744 b are provided over the insulating layer 726 in contact with part of the semiconductor layer 742.
- the electrode 744a can function as one of a source electrode and a drain electrode.
- the electrode 744b can function as the other of the source electrode and the drain electrode. Part of the electrode 744 a and part of the electrode 744 b are formed over the insulating layer 741.
- the insulating layer 741 can function as a channel protective layer. By providing the insulating layer 741 over the channel formation region, it is possible to prevent the semiconductor layer 742 from being exposed when the electrodes 744a and 744b are formed. Accordingly, the channel formation region of the semiconductor layer 742 can be prevented from being etched when the electrodes 744a and 744b are formed. According to one embodiment of the present invention, a transistor with favorable electrical characteristics can be realized.
- the transistor 810 includes the insulating layer 728 over the electrode 744a, the electrode 744b, and the insulating layer 741, and the insulating layer 729 over the insulating layer 728.
- an oxide semiconductor is used for the semiconductor layer 742
- a material capable of depriving oxygen from part of the semiconductor layer 742 and causing oxygen vacancies is used at least in portions of the electrodes 744a and 744b in contact with the semiconductor layer 742. It is preferable.
- the carrier concentration increases, and the region becomes n-type and becomes an n-type region (n + layer). Accordingly, the region can function as a source region or a drain region.
- tungsten, titanium, or the like can be given as an example of a material that can take oxygen from the semiconductor layer 742 and generate oxygen vacancies.
- a layer functioning as an n-type semiconductor or a p-type semiconductor is preferably provided between the semiconductor layer 742 and the electrode 744a and between the semiconductor layer 742 and the electrode 744b.
- a layer functioning as an n-type semiconductor or a p-type semiconductor can function as a source region or a drain region of a transistor.
- the insulating layer 729 is preferably formed using a material having a function of preventing or reducing the diffusion of impurities from the outside to the transistor. Note that the insulating layer 729 can be omitted as necessary.
- a transistor 811 illustrated in FIG. 20A2 is different from the transistor 810 in that the transistor 811 includes an electrode 723 that can function as a back gate electrode over the insulating layer 729.
- the electrode 723 can be formed using a material and a method similar to those of the electrode 746.
- the back gate electrode is formed using a conductive layer, and the channel formation region of the semiconductor layer is sandwiched between the gate electrode and the back gate electrode. Therefore, the back gate electrode can function in the same manner as the gate electrode.
- the potential of the back gate electrode may be the same as that of the gate electrode, or may be a ground potential (GND potential) or an arbitrary potential.
- the threshold voltage of the transistor can be changed by changing the potential of the back gate electrode independently of the gate electrode.
- Both the electrode 746 and the electrode 723 can function as gate electrodes.
- each of the insulating layers 726, 728, and 729 can function as a gate insulating layer.
- the electrode 723 may be provided between the insulating layer 728 and the insulating layer 729.
- the other is referred to as a “back gate electrode”.
- the electrode 746 when the electrode 723 is referred to as a “gate electrode”, the electrode 746 is referred to as a “back gate electrode”.
- the transistor 811 can be regarded as a kind of top-gate transistor.
- One of the electrode 746 and the electrode 723 may be referred to as a “first gate electrode”, and the other may be referred to as a “second gate electrode”.
- the electrode 746 and the electrode 723 With the electrode 746 and the electrode 723 with the semiconductor layer 742 interposed therebetween, and further by setting the electrode 746 and the electrode 723 to have the same potential, a region where carriers flow in the semiconductor layer 742 becomes larger in the film thickness direction. The amount of carrier movement increases. As a result, the on-state current of the transistor 811 is increased and the field-effect mobility is increased.
- the transistor 811 is a transistor having a large on-state current with respect to the occupied area.
- the area occupied by the transistor 811 can be reduced with respect to the required on-state current.
- the area occupied by a transistor can be reduced.
- the gate electrode and the back gate electrode are formed using conductive layers, they have a function of preventing an electric field generated outside the transistor from acting on a semiconductor layer in which a channel is formed (particularly, an electric field shielding function against static electricity). .
- the electric field shielding function can be improved by forming the back gate electrode larger than the semiconductor layer and covering the semiconductor layer with the back gate electrode.
- the back gate electrode is formed using a light-blocking conductive film
- light can be prevented from entering the semiconductor layer from the back gate electrode side. Therefore, light deterioration of the semiconductor layer can be prevented, and deterioration of electrical characteristics such as shift of the threshold voltage of the transistor can be prevented.
- a highly reliable transistor can be realized.
- a highly reliable semiconductor device can be realized.
- 20B1 is a cross-sectional view in the channel length direction of a channel protection transistor 820 having a structure different from that in FIG 20A1.
- the transistor 820 has substantially the same structure as the transistor 810, except that an insulating layer 741 covers an end portion of the semiconductor layer 742.
- the semiconductor layer 742 and the electrode 744a are electrically connected to each other in an opening formed by selectively removing part of the insulating layer 741 which overlaps with the semiconductor layer 742.
- the semiconductor layer 742 and the electrode 744b are electrically connected to each other in an opening formed by selectively removing part of the insulating layer 741 overlapping with the semiconductor layer 742.
- a region of the insulating layer 741 that overlaps with a channel formation region can function as a channel protective layer.
- a transistor 821 illustrated in FIG. 20B2 is different from the transistor 820 in that the transistor 821 includes an electrode 723 that can function as a back gate electrode over the insulating layer 729.
- the semiconductor layer 742 By providing the insulating layer 741, it is possible to prevent the semiconductor layer 742 from being exposed when the electrodes 744a and 744b are formed. Therefore, the semiconductor layer 742 can be prevented from being thinned when the electrodes 744a and 744b are formed.
- the distance between the electrode 744a and the electrode 746 and the distance between the electrode 744b and the electrode 746 are longer than those in the transistor 810 and the transistor 811.
- parasitic capacitance generated between the electrode 744a and the electrode 746 can be reduced.
- parasitic capacitance generated between the electrode 744b and the electrode 746 can be reduced. According to one embodiment of the present invention, a transistor with favorable electrical characteristics can be realized.
- FIG. 20C1 is a cross-sectional view in the channel length direction of a channel-etched transistor 825 that is one of bottom-gate transistors.
- the electrode 744a and the electrode 744b are formed without using the insulating layer 741. Therefore, part of the semiconductor layer 742 exposed when the electrodes 744a and 744b are formed may be etched. On the other hand, since the insulating layer 741 is not provided, the productivity of the transistor can be increased.
- a transistor 826 illustrated in FIG. 20C2 is different from the transistor 825 in that the transistor 826 includes an electrode 723 that can function as a back gate electrode over the insulating layer 729.
- 21A1 to 21C2 are cross-sectional views in the channel width direction of the transistors 810, 811, 820, 821, 825, and 826, respectively.
- the gate electrode and the back gate electrode are connected to each other, and the potentials of the gate electrode and the back gate electrode are the same.
- the semiconductor layer 742 is sandwiched between the gate electrode and the back gate electrode.
- the length in the channel width direction of each of the gate electrode and the back gate electrode is longer than the length in the channel width direction of the semiconductor layer 742, and the entire channel width direction of the semiconductor layer 742 includes the insulating layers 726, 741, 728, and 729.
- the structure is covered with a gate electrode or a back gate electrode with a gap therebetween.
- the semiconductor layer 742 included in the transistor can be electrically surrounded by the electric fields of the gate electrode and the back gate electrode.
- a transistor device structure in which a semiconductor layer 742 in which a channel formation region is formed is electrically surrounded by an electric field of a gate electrode and a back gate electrode like the transistor 821 or the transistor 826 is referred to as a surround channel (S-channel) structure. Can do.
- the S-channel structure an electric field for inducing a channel by one or both of the gate electrode and the back gate electrode can be effectively applied to the semiconductor layer 742, so that the current driving capability of the transistor is improved. High on-current characteristics can be obtained. In addition, since the on-state current can be increased, the transistor can be miniaturized. Further, with the S-channel structure, the mechanical strength of the transistor can be increased.
- a transistor 842 illustrated in FIG. 22A1 is one of top-gate transistors.
- the electrodes 744 a and 744 b are electrically connected to the semiconductor layer 742 in openings formed in the insulating layers 728 and 729.
- the transistor 842 has a region where the insulating layer 726 extends beyond the end portion of the electrode 746.
- the impurity concentration of the region into which the impurity is introduced through the insulating layer 726 of the semiconductor layer 742 is lower than the region into which the impurity is introduced without passing through the insulating layer 726.
- an LDD (Lightly Doped Drain) region is formed in a region that does not overlap with the electrode 746.
- a transistor 843 illustrated in FIG. 22A2 is different from the transistor 842 in having an electrode 723.
- the transistor 843 includes an electrode 723 formed over the substrate 771.
- the electrode 723 has a region overlapping with the semiconductor layer 742 with the insulating layer 772 interposed therebetween.
- the electrode 723 can function as a back gate electrode.
- the insulating layer 726 which does not overlap with the electrode 746 may be entirely removed. Further, the insulating layer 726 may be left as in the transistor 846 illustrated in FIG. 22C1 and the transistor 847 illustrated in FIG.
- the transistors 843 to 847 can also form impurity regions in the semiconductor layer 742 in a self-aligned manner by introducing impurities into the semiconductor layer 742 using the electrode 746 as a mask after the electrode 746 is formed. According to one embodiment of the present invention, a transistor with favorable electrical characteristics can be realized. According to one embodiment of the present invention, a highly integrated semiconductor device can be realized.
- 23A1 to 23C2 are cross-sectional views in the channel width direction of the transistors 842, 843, 844, 845, 846, and 847, respectively.
- the transistor 843, the transistor 845, and the transistor 847 each have the S-channel structure described above. However, this embodiment is not limited to this, and the transistor 843, the transistor 845, and the transistor 847 do not have to have an S-channel structure.
- ATM automatic teller machine
- FIG. 24A illustrates a digital camera, which includes a housing 961, a shutter button 962, a microphone 963, a speaker 967, a display portion 965, operation keys 966, a zoom lever 968, a lens 969, and the like.
- a digital camera which includes a housing 961, a shutter button 962, a microphone 963, a speaker 967, a display portion 965, operation keys 966, a zoom lever 968, a lens 969, and the like.
- FIG. 24B illustrates digital signage, which includes a large display portion 922. For example, it is attached to the side surface of the pillar 921.
- the display portion 922 By using the display device of one embodiment of the present invention for the display portion 922, various images can be displayed.
- FIG. 24C illustrates an example of a mobile phone, which includes a housing 951, a display portion 952, operation buttons 953, an external connection terminal 954, a speaker 955, a microphone 956, a camera 957, and the like.
- the mobile phone includes a touch sensor in the display portion 952. All operations such as making a call or inputting characters can be performed by touching the display portion 952 with a finger or a stylus.
- the housing 901 and the display portion 952 are flexible and can be used by being bent as illustrated. By using the display device of one embodiment of the present invention for the display portion 952, various images can be displayed.
- FIG. 24D illustrates a video camera, which includes a first housing 901, a second housing 902, a display portion 903, operation keys 904, a lens 905, a connection portion 906, a speaker 907, and the like.
- the operation key 904 and the lens 905 are provided in the first housing 901, and the display portion 903 is provided in the second housing 902.
- the display portion 903 is provided in the second housing 902.
- FIG. 24E illustrates a television which includes a housing 971, a display portion 973, operation keys 974, speakers 975, a communication connection terminal 976, an optical sensor 977, and the like.
- the display portion 973 is provided with a touch sensor and can perform an input operation. By using the display device of one embodiment of the present invention for the display portion 973, various images can be displayed.
- FIG. 24F illustrates a portable data terminal, which includes a housing 911, a display portion 912, a speaker 913, a camera 919, and the like. Information can be input and output by a touch panel function of the display portion 912. By using the display device of one embodiment of the present invention for the display portion 912, various images can be displayed.
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Abstract
Description
本実施の形態では、本発明の一態様である表示装置について、図面を参照して説明する。
また、上述の画像データの出力後、トランジスタ107を非導通とすれば配線126[m]はフローティングとなり、配線126[m]に画像データ(DATA)が保持される。トランジスタ108を非導通とすれば配線125[m]はフローティングとなり、配線125[m]に画像データ(DATA)が保持される。
本実施の形態では、液晶素子を用いた表示素子の構成例と、EL素子を用いた表示装置の構成例について説明する。なお、本実施の形態においては、実施の形態1で説明した表示装置の要素、動作および機能の説明は省略する。
本実施の形態では、上記実施の形態に示した各トランジスタに置き換えて用いることのできるトランジスタの一例について、図面を用いて説明する。
図20(A1)は、ボトムゲート型のトランジスタの一種であるチャネル保護型のトランジスタ810のチャネル長方向の断面図である。図20(A1)において、トランジスタ810は基板771上に形成されている。また、トランジスタ810は、基板771上に絶縁層772を介して電極746を有する。また、電極746上に絶縁層726を介して半導体層742を有する。電極746はゲート電極として機能できる。絶縁層726はゲート絶縁層として機能できる。
図22(A1)に例示するトランジスタ842は、トップゲート型のトランジスタの1つである。電極744aおよび電極744bは、絶縁層728および絶縁層729に形成した開口部において半導体層742と電気的に接続する。
本発明の一態様に係る表示装置を用いることができる電子機器として、表示機器、パーソナルコンピュータ、記録媒体を備えた画像記憶装置または画像再生装置、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図24に示す。
Claims (15)
- 第1の回路と、画素と、配線と、を有し、
前記第1の回路は、前記配線にデータを供給する機能、および前記配線をフローティングとして前記データを保持する機能を有し、
前記画素は、前記配線から前記データを2回取り込んで加算する機能を有し、
前記画素は、前記配線に前記データが供給されている期間に1回目の前記データの書き込みを行い、
前記画素は、前記配線に前記データが保持されている期間に2回目の前記データの書き込みを行うことができる表示装置。 - 第1の回路と、第1の画素と、第2の画素と、第1の配線と、第2の配線と、を有し、
前記第1の回路は、前記第1の配線に第1のデータを供給する機能、および前記第1の配線をフローティングとして前記第1のデータを保持する機能を有し、
前記第1の回路は、前記第2の配線に第2のデータを供給する機能、および前記第2の配線をフローティングとして前記第2のデータを保持する機能を有し、
前記第1の画素は、前記第1の配線から前記第1のデータを2回取り込んで加算する機能を有し、
前記第2の画素は、前記第2の配線から前記第2のデータを2回取り込んで加算する機能を有し、
前記第1の画素は、前記第1の配線に前記第1のデータが供給されている期間に1回目の前記第1のデータの書き込みを行い、
前記第1の画素は、前記第1の配線に前記第1のデータが保持されている期間に2回目の前記第1のデータの書き込みを行い、
前記第2の画素は、前記第2の配線に前記第2のデータが供給されている期間に1回目の前記第2のデータの書き込みを行い、
前記第2の画素は、前記第2の配線に前記第2のデータが保持されている期間に2回目の前記第2のデータの書き込みを行い、
前記第1の画素が2回目の前記第1のデータの書き込みを行う期間と、前記第2の画素が1回目の前記第2のデータの書き込みを行う期間を重ねることができる表示装置。 - 請求項2において、
さらに第3の配線と、第4の配線と、第5の配線と、を有し、
前記第3の配線は、前記第1の画素を選択する信号電位を供給する機能を有し、
前記第4の配線は、前記第1の画素を選択する信号電位を供給する機能を有し、
前記第4の配線は、前記第2の画素を選択する信号電位を供給する機能を有し、
前記第5の配線は、前記第2の画素を選択する信号電位を供給する機能を有する表示装置。 - 第1の回路と、第1の画素と、第2の画素と、第1の配線と、第2の配線と、第3の配線と、第4の配線と、第5の配線と、を有し、
前記第1の回路は、前記第1の配線と電気的に接続され、
前記第1の回路は、前記第2の配線と電気的に接続され、
前記第1の画素および前記第2の画素は、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第1の容量素子と、回路ブロックと、を有し、
前記第1のトランジスタのソースまたはドレインの一方は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記第1の容量素子の一方の電極と電気的に接続され、
前記第1の容量素子の他方の電極は、前記第3のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記回路ブロックと電気的に接続され、
前記第1の画素において、
前記第1のトランジスタのソースまたはドレインの他方は、前記第1の配線に電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第1の配線に電気的に接続され、
前記第1のトランジスタのゲートは、前記第4の配線と電気的に接続され、
前記第2のトランジスタのゲートは、前記第3の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第3の配線と電気的に接続され、
前記第2の画素において、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2の配線に電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第2の配線に電気的に接続され、
前記第1のトランジスタのゲートは、前記第5の配線と電気的に接続され、
前記第2のトランジスタのゲートは、前記第4の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第4の配線と電気的に接続され、
前記回路ブロックは、表示素子を有する表示装置。 - 請求項4において、
さらに第2の容量素子と、第3の容量素子と、を有し、
前記第2の容量素子の一方の電極は、前記第1の配線と電気的に接続され、
前記第3の容量素子の一方の電極は、前記第2の配線と電気的に接続される表示装置。 - 請求項4または5において、
前記第1の回路は、ソースドライバと電気的に接続され、
前記第3の配線乃至前記第5の配線は、ゲートドライバと電気的に接続されている表示装置。 - 請求項4乃至6のいずれか一項において、
前記第1の回路は、第4のトランジスタと、第5のトランジスタと、を有し、
前記第4のトランジスタのソースまたはドレインの一方は、前記第1の配線と電気的に接続され、
前記第5のトランジスタのソースまたはドレインの一方は、前記第2の配線と電気的に接続され
前記第4のトランジスタのソースまたはドレインの他方および前記第5のトランジスタのソースまたはドレインの他方は、電気的に接続されている表示装置。 - 請求項4乃至7のいずれか一項において、
前記回路ブロックは、第6のトランジスタと、第7のトランジスタと、第4の容量素子と、前記表示素子として有機EL素子と、を有し、
前記有機EL素子の一方の電極は、前記第7のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第7のトランジスタのソースまたはドレインの他方は、前記第4の容量素子の一方の電極と電気的に接続され、
前記第4の容量素子の一方の電極は、前記第6のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第6のトランジスタのゲートは、前記第4の容量素子の他方の電極と電気的に接続され、
前記第4の容量素子の他方の電極は、前記第1の容量素子の一方の電極と電気的に接続されている表示装置。 - 請求項8において、
前記第6のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのソースまたはドレインの他方と電気的に接続されている表示装置。 - 請求項4乃至7のいずれか一項において、
前記回路ブロックは、第8のトランジスタと、第5の容量素子と、前記表示素子として液晶素子と、を有し、
前記液晶素子の一方の電極は、前記第5の容量素子の一方の電極と電気的に接続され、
前記第5の容量素子の一方の電極は、前記第8のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第8のトランジスタのソースまたはドレインの他方は、前記第1の容量素子の一方の電極と電気的に接続されている表示装置。 - 請求項10において、
前記第5の容量素子の他方の電極は、前記第2のトランジスタのソースまたはドレインの他方と電気的に接続されている表示装置。 - 請求項10または11において、
前記液晶素子は、一対の電極間に樹脂部と液晶部を有する光散乱型液晶素子である表示装置。 - 請求項10乃至12のいずれか一項において、
赤色(R)を発する発光素子と、緑色(G)を発する発光素子と、青色(B)を発する発光素子と、を有し、
前記各発光素子を順次点灯させ、前記液晶素子を介して外部に射出することにより表示を行う表示装置。 - 請求項4乃至13のいずれか一項において、
前記第3のトランジスタは、チャネル形成領域に金属酸化物を有し、前記金属酸化物は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有する表示装置。 - 請求項1乃至14のいずれか一項に記載の表示装置と、カメラと、を有する電子機器。
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112313736B (zh) | 2018-07-05 | 2022-12-02 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
US11841587B2 (en) * | 2019-03-29 | 2023-12-12 | Saturn Licensing Llc | Light emitting device, display, and electronic apparatus |
KR20210027110A (ko) | 2019-08-29 | 2021-03-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
CN112349250B (zh) * | 2020-11-20 | 2022-02-25 | 武汉天马微电子有限公司 | 一种显示面板以及驱动方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001282201A (ja) * | 2000-03-31 | 2001-10-12 | Internatl Business Mach Corp <Ibm> | 表示装置、液晶表示パネル、液晶表示装置および液晶表示装置の駆動方法 |
JP2012168226A (ja) * | 2011-02-10 | 2012-09-06 | Seiko Epson Corp | 電気光学装置の駆動回路、電気光学装置及び電子機器 |
JP2012185328A (ja) * | 2011-03-04 | 2012-09-27 | Sony Corp | 画素回路、表示パネル、表示装置および電子機器 |
JP2017027012A (ja) * | 2015-07-24 | 2017-02-02 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (154)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6587086B1 (en) * | 1999-10-26 | 2003-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US7180496B2 (en) * | 2000-08-18 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method of driving the same |
US8633878B2 (en) | 2001-06-21 | 2014-01-21 | Japan Display Inc. | Image display |
JP4982014B2 (ja) | 2001-06-21 | 2012-07-25 | 株式会社日立製作所 | 画像表示装置 |
US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
TW558743B (en) * | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
JP4149168B2 (ja) * | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
KR100864918B1 (ko) * | 2001-12-26 | 2008-10-22 | 엘지디스플레이 주식회사 | 액정표시장치의 데이터 구동 장치 |
JP4197287B2 (ja) | 2003-03-28 | 2008-12-17 | シャープ株式会社 | 表示装置 |
US7224118B2 (en) * | 2003-06-17 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus having a wiring connected to a counter electrode via an opening portion in an insulating layer that surrounds a pixel electrode |
US7595775B2 (en) | 2003-12-19 | 2009-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting display device with reverse biasing circuit |
JP4860143B2 (ja) * | 2003-12-19 | 2012-01-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
KR100584716B1 (ko) * | 2004-04-06 | 2006-05-29 | 엘지.필립스 엘시디 주식회사 | 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법 |
US20060056267A1 (en) * | 2004-09-13 | 2006-03-16 | Samsung Electronics Co., Ltd. | Driving unit and display apparatus having the same |
JP4842537B2 (ja) * | 2004-12-03 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
US7646367B2 (en) * | 2005-01-21 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic apparatus |
KR101209289B1 (ko) * | 2005-04-07 | 2012-12-10 | 삼성디스플레이 주식회사 | 표시 패널과, 이를 구비한 표시 장치 및 구동 방법 |
US8847861B2 (en) * | 2005-05-20 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device, method for driving the same, and electronic device |
TWI270922B (en) * | 2005-06-08 | 2007-01-11 | Au Optronics Corp | A display panel and a rescue method thereof |
JP5100993B2 (ja) * | 2005-09-09 | 2012-12-19 | ティーピーオー、ホンコン、ホールディング、リミテッド | 液晶駆動回路およびこれを有する液晶表示装置 |
JP4623464B2 (ja) * | 2005-09-26 | 2011-02-02 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
EP1998374A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
US9922600B2 (en) * | 2005-12-02 | 2018-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI274931B (en) * | 2005-12-16 | 2007-03-01 | Quanta Display Inc | Circuit for amplifying a display signal to be sent to a repair line by using a non-inverting amplifier |
JP5034251B2 (ja) * | 2006-02-06 | 2012-09-26 | セイコーエプソン株式会社 | 画素回路の駆動方法 |
JP5116277B2 (ja) * | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
JP5403860B2 (ja) * | 2006-10-10 | 2014-01-29 | 株式会社ジャパンディスプレイ | カラー液晶表示装置 |
TWI442368B (zh) * | 2006-10-26 | 2014-06-21 | Semiconductor Energy Lab | 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法 |
JP5216204B2 (ja) * | 2006-10-31 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその作製方法 |
JP4438790B2 (ja) * | 2006-11-17 | 2010-03-24 | ソニー株式会社 | 画素回路および表示装置、並びに画素回路の製造方法 |
TW200827888A (en) * | 2006-12-29 | 2008-07-01 | Innolux Display Corp | Liquid crystal display |
KR101337256B1 (ko) * | 2007-02-14 | 2013-12-05 | 삼성디스플레이 주식회사 | 표시 장치의 구동 장치 및 이를 포함하는 표시 장치 |
JP2008241832A (ja) * | 2007-03-26 | 2008-10-09 | Seiko Epson Corp | 液晶装置、画素回路、アクティブマトリクス基板、および電子機器 |
JP5116359B2 (ja) * | 2007-05-17 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US20100033460A1 (en) | 2007-05-25 | 2010-02-11 | Takaji Numao | Display device |
TWI642113B (zh) * | 2008-08-08 | 2018-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP5015887B2 (ja) * | 2008-09-16 | 2012-08-29 | 株式会社日立製作所 | 画像表示装置 |
TWI501401B (zh) * | 2008-10-31 | 2015-09-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
TWI443629B (zh) | 2008-12-11 | 2014-07-01 | Sony Corp | 顯示裝置、其驅動方法及電子設備 |
US9741309B2 (en) * | 2009-01-22 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving display device including first to fourth switches |
US8872751B2 (en) * | 2009-03-26 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having interconnected transistors and electronic device including the same |
KR101752640B1 (ko) * | 2009-03-27 | 2017-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
KR102386147B1 (ko) * | 2009-07-31 | 2022-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
KR101752348B1 (ko) | 2009-10-30 | 2017-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI420493B (zh) * | 2009-12-17 | 2013-12-21 | Au Optronics Corp | 閘極驅動電路 |
WO2011074379A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
KR101783066B1 (ko) | 2010-01-20 | 2017-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 구동방법 |
WO2011096153A1 (en) * | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101210146B1 (ko) * | 2010-04-05 | 2012-12-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
JP5456901B2 (ja) | 2010-09-06 | 2014-04-02 | パナソニック株式会社 | 表示装置およびその駆動方法 |
US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
US8941112B2 (en) * | 2010-12-28 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9443984B2 (en) * | 2010-12-28 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI792087B (zh) * | 2011-05-05 | 2023-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JP2014522506A (ja) * | 2011-05-28 | 2014-09-04 | イグニス・イノベイション・インコーポレーテッド | ディスプレイのピクセルの速い補償プログラミングためのシステムと方法 |
JP5794013B2 (ja) * | 2011-07-22 | 2015-10-14 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
WO2013105393A1 (ja) * | 2012-01-12 | 2013-07-18 | シャープ株式会社 | 画素回路及び表示装置 |
KR102119914B1 (ko) * | 2012-05-31 | 2020-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP6228753B2 (ja) * | 2012-06-01 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、表示モジュール、及び電子機器 |
KR102368865B1 (ko) * | 2012-07-20 | 2022-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치를 포함하는 전자 장치 |
JP6220597B2 (ja) * | 2012-08-10 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2014038159A1 (ja) * | 2012-09-04 | 2014-03-13 | シャープ株式会社 | 液晶表示装置 |
KR101972077B1 (ko) * | 2012-09-28 | 2019-08-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102305310B1 (ko) * | 2012-12-28 | 2021-09-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제작 방법 |
TWI614813B (zh) * | 2013-01-21 | 2018-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US9041453B2 (en) * | 2013-04-04 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Pulse generation circuit and semiconductor device |
KR20140132504A (ko) * | 2013-05-08 | 2014-11-18 | 삼성디스플레이 주식회사 | 화소 및 이를 이용한 유기전계발광 표시장치 |
KR20150006145A (ko) * | 2013-07-08 | 2015-01-16 | 삼성디스플레이 주식회사 | 화소 및 이를 이용한 유기전계발광 표시장치 |
KR102218573B1 (ko) * | 2013-09-30 | 2021-02-23 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
US9985055B2 (en) * | 2013-10-09 | 2018-05-29 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
TW202203465A (zh) * | 2013-10-10 | 2022-01-16 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
KR102151235B1 (ko) * | 2013-10-14 | 2020-09-03 | 삼성디스플레이 주식회사 | 표시 기판, 표시 기판의 제조 방법 및 표시 기판을 포함하는 표시 장치 |
KR102123589B1 (ko) * | 2013-11-27 | 2020-06-17 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
KR102123979B1 (ko) * | 2013-12-09 | 2020-06-17 | 엘지디스플레이 주식회사 | 리페어 구조를 갖는 유기발광표시장치 |
US9806098B2 (en) * | 2013-12-10 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
KR20150146409A (ko) * | 2014-06-20 | 2015-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치, 입출력 장치, 및 전자 기기 |
JP6375165B2 (ja) * | 2014-07-23 | 2018-08-15 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102281755B1 (ko) * | 2014-09-16 | 2021-07-27 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
US9773832B2 (en) * | 2014-12-10 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
CN104637445B (zh) * | 2015-02-03 | 2017-03-08 | 深圳市华星光电技术有限公司 | Amoled像素驱动电路及像素驱动方法 |
CN113341624A (zh) * | 2015-02-12 | 2021-09-03 | 株式会社半导体能源研究所 | 显示装置 |
KR102302275B1 (ko) * | 2015-02-28 | 2021-09-15 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102440302B1 (ko) * | 2015-04-13 | 2022-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US10460984B2 (en) * | 2015-04-15 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
KR102332255B1 (ko) * | 2015-04-29 | 2021-11-29 | 삼성디스플레이 주식회사 | 표시 장치 |
CN104777692B (zh) * | 2015-05-08 | 2018-09-04 | 厦门天马微电子有限公司 | 阵列基板及制作方法、触控显示面板 |
KR102319315B1 (ko) * | 2015-05-14 | 2021-10-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN113990756A (zh) * | 2015-05-22 | 2022-01-28 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
TWI548923B (zh) * | 2015-06-16 | 2016-09-11 | 友達光電股份有限公司 | 顯示面板及其畫素陣列 |
US10140940B2 (en) | 2015-07-24 | 2018-11-27 | Japan Display Inc. | Display device |
US10553690B2 (en) * | 2015-08-04 | 2020-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR102500271B1 (ko) * | 2015-08-19 | 2023-02-16 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR102392471B1 (ko) * | 2015-10-16 | 2022-04-29 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
WO2017068478A1 (en) * | 2015-10-22 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device including the semiconductor device |
TWI562120B (en) * | 2015-11-11 | 2016-12-11 | Au Optronics Corp | Pixel circuit |
WO2017081579A1 (en) * | 2015-11-13 | 2017-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN115274860A (zh) * | 2015-11-20 | 2022-11-01 | 株式会社半导体能源研究所 | 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置 |
WO2017085591A1 (ja) * | 2015-11-20 | 2017-05-26 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置、及び該半導体装置を有する電子機器 |
US10714633B2 (en) * | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
KR102431047B1 (ko) * | 2015-12-22 | 2022-08-11 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 박막 트랜지스터 기판, 이를 포함하는 표시패널 및 표시장치 |
KR102447828B1 (ko) * | 2015-12-22 | 2022-09-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102515807B1 (ko) * | 2016-01-11 | 2023-03-31 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR102447451B1 (ko) * | 2016-01-20 | 2022-09-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US10651209B2 (en) * | 2016-01-27 | 2020-05-12 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
US10700212B2 (en) * | 2016-01-28 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof |
CN114093890B (zh) * | 2016-01-29 | 2023-07-04 | 株式会社半导体能源研究所 | 半导体装置 |
US10490142B2 (en) * | 2016-01-29 | 2019-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
JP6796086B2 (ja) * | 2016-02-05 | 2020-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6677386B2 (ja) * | 2016-02-16 | 2020-04-08 | 天馬微電子有限公司 | 表示装置および表示装置の製造方法 |
JP2017173976A (ja) * | 2016-03-22 | 2017-09-28 | 株式会社ジャパンディスプレイ | センサ及びセンサ付き表示装置 |
US10528165B2 (en) * | 2016-04-04 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
WO2017195486A1 (ja) * | 2016-05-11 | 2017-11-16 | ソニー株式会社 | 複合型トランジスタ |
WO2017208109A1 (en) * | 2016-06-03 | 2017-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, oxide semiconductor, oxynitride semiconductor, and transistor |
JP2017224508A (ja) * | 2016-06-16 | 2017-12-21 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6763703B2 (ja) * | 2016-06-17 | 2020-09-30 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
KR102330605B1 (ko) * | 2016-06-22 | 2021-11-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN106168865B (zh) * | 2016-06-28 | 2019-11-26 | 京东方科技集团股份有限公司 | 内嵌式触摸屏及其制作方法、显示装置 |
KR102559544B1 (ko) * | 2016-07-01 | 2023-07-26 | 삼성디스플레이 주식회사 | 표시 장치 |
TWI737665B (zh) * | 2016-07-01 | 2021-09-01 | 日商半導體能源硏究所股份有限公司 | 半導體裝置以及半導體裝置的製造方法 |
JP7007080B2 (ja) * | 2016-07-19 | 2022-02-10 | 株式会社ジャパンディスプレイ | Tft回路基板 |
US20190243194A1 (en) * | 2016-09-02 | 2019-08-08 | Sharp Kabushiki Kaisha | Active matrix substrate and method for manufacturing same |
CN109661696B (zh) * | 2016-09-05 | 2021-04-13 | 夏普株式会社 | 有源矩阵基板及其制造方法 |
US20190228828A1 (en) * | 2016-09-05 | 2019-07-25 | Sharp Kabushiki Kaisha | Semiconductor device |
CN107818986A (zh) * | 2016-09-14 | 2018-03-20 | 天马日本株式会社 | 半导体装置及其制造方法和显示设备及其制造方法 |
CN109791892A (zh) * | 2016-09-27 | 2019-05-21 | 夏普株式会社 | 有源矩阵基板及其制造方法 |
JP2018054733A (ja) * | 2016-09-27 | 2018-04-05 | 株式会社ジャパンディスプレイ | 液晶表示装置及びカラーフィルタ基板 |
JP6756560B2 (ja) * | 2016-09-27 | 2020-09-16 | 株式会社ジャパンディスプレイ | 表示装置 |
CN109791893A (zh) * | 2016-09-28 | 2019-05-21 | 夏普株式会社 | 薄膜晶体管基板、薄膜晶体管基板的制造方法以及显示装置 |
TW201817014A (zh) * | 2016-10-07 | 2018-05-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
WO2018069785A1 (en) * | 2016-10-12 | 2018-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and system using the same |
CN106504699B (zh) * | 2016-10-14 | 2019-02-01 | 深圳市华星光电技术有限公司 | Amoled像素驱动电路及驱动方法 |
JP6815159B2 (ja) * | 2016-10-14 | 2021-01-20 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102591549B1 (ko) * | 2016-10-19 | 2023-10-20 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US10825843B2 (en) * | 2016-10-19 | 2020-11-03 | Sharp Kabushiki Kaisha | Active matrix substrate and method for producing same |
KR20180052805A (ko) * | 2016-11-10 | 2018-05-21 | 삼성디스플레이 주식회사 | 표시 장치 |
JP6998652B2 (ja) * | 2016-11-11 | 2022-01-18 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102590316B1 (ko) * | 2016-12-05 | 2023-10-17 | 삼성디스플레이 주식회사 | 표시 장치 |
CN206248976U (zh) * | 2016-12-05 | 2017-06-13 | 京东方科技集团股份有限公司 | 阵列基板和显示装置 |
KR102594020B1 (ko) * | 2016-12-07 | 2023-10-27 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20180079503A (ko) * | 2016-12-30 | 2018-07-11 | 삼성디스플레이 주식회사 | 도전 패턴 및 이를 구비하는 표시 장치 |
JP2018116107A (ja) * | 2017-01-17 | 2018-07-26 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2018138604A1 (en) * | 2017-01-27 | 2018-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Capacitor, semiconductor device, and manufacturing method of semiconductor device |
WO2018138619A1 (en) * | 2017-01-30 | 2018-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2018124437A (ja) * | 2017-02-01 | 2018-08-09 | 株式会社ジャパンディスプレイ | 表示装置 |
CN107068057B (zh) * | 2017-02-14 | 2019-05-03 | 京东方科技集团股份有限公司 | 一种像素驱动电路、其驱动方法及显示面板 |
WO2018182666A1 (en) * | 2017-03-31 | 2018-10-04 | Intel Corporation | Gate for a transistor |
CN106935659B (zh) * | 2017-05-11 | 2021-01-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板以及显示装置 |
KR20200053522A (ko) | 2017-09-14 | 2020-05-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지의 이상 검지 시스템 및 이차 전지의 이상 검출 방법 |
US11302278B2 (en) * | 2017-09-15 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device including pixel and electronic device |
WO2019058463A1 (ja) * | 2017-09-20 | 2019-03-28 | シャープ株式会社 | 表示装置および表示装置の駆動方法 |
US10741635B2 (en) * | 2017-09-28 | 2020-08-11 | Sharp Kabushiki Kaisha | Display device, display device manufacturing method, and display device manufacturing apparatus |
CN111149146B (zh) * | 2017-09-28 | 2021-12-07 | 夏普株式会社 | 显示装置及其制造方法 |
US20200211911A1 (en) * | 2017-09-29 | 2020-07-02 | Intel Corporation | Spacer-patterned inverters based on thin-film transistors |
JP7110223B2 (ja) * | 2017-11-02 | 2022-08-01 | 株式会社半導体エネルギー研究所 | 給電装置およびその動作方法 |
-
2019
- 2019-01-22 WO PCT/IB2019/050507 patent/WO2019150224A1/ja active Application Filing
- 2019-01-22 US US16/962,570 patent/US11355082B2/en active Active
- 2019-01-22 KR KR1020207024201A patent/KR102606487B1/ko active IP Right Grant
- 2019-01-22 JP JP2019568838A patent/JP7245788B2/ja active Active
- 2019-01-22 CN CN201980010491.9A patent/CN111656430B/zh active Active
- 2019-01-22 CN CN202210844141.6A patent/CN115202115A/zh active Pending
- 2019-01-22 KR KR1020237040176A patent/KR20230164225A/ko active Application Filing
-
2021
- 2021-11-29 US US17/536,341 patent/US11626082B2/en active Active
-
2023
- 2023-03-13 JP JP2023038611A patent/JP2023085306A/ja not_active Withdrawn
- 2023-04-10 US US18/132,554 patent/US20230335075A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001282201A (ja) * | 2000-03-31 | 2001-10-12 | Internatl Business Mach Corp <Ibm> | 表示装置、液晶表示パネル、液晶表示装置および液晶表示装置の駆動方法 |
JP2012168226A (ja) * | 2011-02-10 | 2012-09-06 | Seiko Epson Corp | 電気光学装置の駆動回路、電気光学装置及び電子機器 |
JP2012185328A (ja) * | 2011-03-04 | 2012-09-27 | Sony Corp | 画素回路、表示パネル、表示装置および電子機器 |
JP2017027012A (ja) * | 2015-07-24 | 2017-02-02 | 株式会社ジャパンディスプレイ | 表示装置 |
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KR102606487B1 (ko) | 2023-11-27 |
KR20230164225A (ko) | 2023-12-01 |
CN111656430B (zh) | 2022-07-26 |
KR20200110420A (ko) | 2020-09-23 |
JP2023085306A (ja) | 2023-06-20 |
US11355082B2 (en) | 2022-06-07 |
US11626082B2 (en) | 2023-04-11 |
CN115202115A (zh) | 2022-10-18 |
JPWO2019150224A1 (ja) | 2021-03-25 |
JP7245788B2 (ja) | 2023-03-24 |
CN111656430A (zh) | 2020-09-11 |
US20200357354A1 (en) | 2020-11-12 |
US20230335075A1 (en) | 2023-10-19 |
US20220180834A1 (en) | 2022-06-09 |
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