WO2016056656A1 - Procédé de fabrication d'une bosse en alliage - Google Patents

Procédé de fabrication d'une bosse en alliage Download PDF

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Publication number
WO2016056656A1
WO2016056656A1 PCT/JP2015/078804 JP2015078804W WO2016056656A1 WO 2016056656 A1 WO2016056656 A1 WO 2016056656A1 JP 2015078804 W JP2015078804 W JP 2015078804W WO 2016056656 A1 WO2016056656 A1 WO 2016056656A1
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WIPO (PCT)
Prior art keywords
plating film
alloy
plating
acid
film
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PCT/JP2015/078804
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English (en)
Japanese (ja)
Inventor
伊内　祥哉
賢 幡部
Original Assignee
石原ケミカル株式会社
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Publication date
Application filed by 石原ケミカル株式会社 filed Critical 石原ケミカル株式会社
Priority to KR1020167032836A priority Critical patent/KR20160145191A/ko
Priority to EP15849378.3A priority patent/EP3206225A4/fr
Priority to KR1020177020278A priority patent/KR101778498B1/ko
Priority to JP2016553173A priority patent/JPWO2016056656A1/ja
Priority to US15/518,219 priority patent/US10062657B2/en
Publication of WO2016056656A1 publication Critical patent/WO2016056656A1/fr

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    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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Definitions

  • the present invention relates to a method for manufacturing an alloy bump, and more particularly to a method for manufacturing an alloy bump using a plating method.
  • flip-chip mounting or the like is used when mounting electronic components or the like on a circuit board.
  • bump electrodes are formed on the circuit board.
  • metal plating is used, and in particular, electroplating is used.
  • Patent Document 1 discloses a method for forming metal bumps using electroplating. Specifically, in order to form metal bumps using electroplating, first, a resist pattern having an opening is formed on a circuit board, and then a metal plating film is formed on the circuit board in the opening by electroplating. A metal bump made of is formed. Thus, the height of the metal bump can be controlled by the thickness of the resist. For example, by increasing the thickness of the resist, a metal bump having a high aspect ratio can be formed.
  • metals such as tin (Sn), lead (Pb), bismuth (Bi), zinc (Zn), copper (Cu) or silver (Ag) are used. Therefore, many alloys containing these metal components are used.
  • a method can be used in which a plating solution containing two or more of the above metals is prepared and an alloy plating film is formed by electroplating using the plating solution.
  • Patent Document 2 proposes a method of stabilizing the metal composition of the Sn—Ag alloy bump.
  • Patent Document 2 when an alloy plating film is formed by electroplating using a Sn—Ag alloy plating solution, the acid concentration of the plating solution is monitored, and the Ag concentration in the plating solution is adjusted based on the acid concentration. I am doing so. By doing in this way, the precipitation amount of Ag can be kept constant and the metal composition of the alloy bump can be kept constant.
  • the present invention has been made in view of the above problems, and its purpose is to make it possible to more easily manage the composition of alloy bumps and to obtain uniform alloy bumps with no bias in composition. It is in.
  • the method for manufacturing an alloy bump according to the present invention includes forming a resist pattern having an opening exposing the substrate on the substrate, and forming an under bump metal on the substrate in the opening.
  • a step of forming a first plating film on the under bump metal by electroplating, and a second plating film not including the metal component included in the first plating film by electroplating on the first plating film And a step of forming a resist bump, and a step of forming an alloy bump by alloying the first plating film and the second plating film by subjecting the substrate to a heat treatment.
  • the alloy bumps are formed by performing heat treatment and alloying them.
  • an alloy bump having a desired composition can be obtained stably and without variation in composition without requiring a complicated process.
  • the composition of the alloy bump obtained simply can be adjusted by adjusting the film thickness of each of the first metal plating film and the second metal plating film.
  • the temperature of the heat treatment for alloying can be made lower than the melting point of the single metal used in the plating film.
  • the method for manufacturing an alloy bump according to the present invention may further include a step of forming a third plating film by electroplating on the second plating film after forming the second plating film.
  • an alloy bump made of a ternary alloy can be easily obtained with a uniform composition by stacking three plating films containing a single metal component.
  • the third plating film may be formed of the same metal as the first plating film.
  • the third plating film with a thickness smaller than that of the first plating film and the second plating film.
  • the first plating film, the second plating film, and the third plating film are each one of tin, bismuth, indium, zinc, silver, and alloys thereof. Preferably it consists of.
  • each of the first plating film, the second plating film, and the third plating film is made of a single metal.
  • each plating film is made of a single metal, the alloy bumps finally obtained by adjusting the film thickness without any variation in the composition of each plating film itself have a desired composition. It can be obtained stably.
  • the first plating film is made of Sn and the second plating film is made of In or Bi.
  • the alloying is started at a temperature lower than the melting point of Sn and In or Bi on the contact surface between the first plating film and the second plating film, the heat treatment temperature can be reduced.
  • the first plating film is made of Sn
  • the second plating film is made of In
  • the alloy bump is formed without forming a further metal film on the second plating film. It is preferable to perform the process to do.
  • the In plating film When the In plating film is formed first, the potential of Sn is higher than that of In. Therefore, when the In plating film is formed and immersed in the Sn plating solution, the In reaction is performed by a substitution reaction before starting the electroplating. Sn is deposited on the surface of the plating film. In this state, the electroplating can be performed normally, but the Sn film deposited by the above substitution reaction has poor adhesion, and therefore there is a risk that the Sn film will fall off in the subsequent resist removal step. Therefore, it is preferable to first form the Sn plating film and then form the In plating film. For this reason, it is preferable to form an alloy bump by melting a two-layer plating film on the In plating film formed on the Sn plating film without forming an Sn plating film. It is preferable to do so in order to simplify the process.
  • the first plating film is made of Sn
  • the second plating film is made of Bi
  • the third plating film is made of Sn
  • a further metal film is formed on the third plating film. It is preferable to perform the process of forming an alloy bump without forming.
  • One plating film is preferably an Sn plating film. Further, since the surface of the Bi plating film is easily oxidized, if the Bi plating film is provided as the uppermost layer, the surface of the Bi plating film may be oxidized and the oxide layer may remain without being melted during the heat treatment.
  • the form in which the Sn plating film (third plating film) is laminated on the film (second plating film) is particularly preferable. In order to simplify the process, it is preferable to form the alloy bump without forming a further film on the third plating film.
  • an alloy bump having a desired composition can be easily obtained stably without variation in composition without requiring a complicated process.
  • (A)-(d) is a figure which shows the manufacturing method of the alloy bump which concerns on the 1st Embodiment of this invention in order of a process.
  • (A)-(e) is a figure which shows the manufacturing method of the alloy bump based on the 2nd Embodiment of this invention in order of a process.
  • a resist film having a thickness of about 70 ⁇ m is formed on the surface of a substrate 10 made of, for example, a semiconductor so as to cover the surface of the substrate 10 by a conventional method, and the substrate 10 is exposed.
  • a resist pattern 12 having an opening 13 is formed.
  • a plating film having a thickness of about 3 ⁇ m made of nickel (Ni), for example, is formed as the UBM 11 on the substrate 10 in the opening 13.
  • Ni nickel
  • the material of the UBM 11 to be formed is not limited to Ni, and can be appropriately selected based on the material of an alloy bump to be formed later, and the thickness of the UBM can be changed as appropriate.
  • the UBM 11 is not limited to a plating film, and may be a metal film formed by another method such as a sputtering method.
  • a resist film is formed so as to cover the substrate 10, and the resist pattern 12 is formed by removing the resist film in a region where the UBM 11 is to be formed later.
  • the UBM 11 is later formed using a printing method or the like.
  • a resist pattern 12 having an opening may be formed in a region where the film is provided. Further, the thickness of the resist pattern can be appropriately determined according to the height of the alloy bump to be finally formed.
  • an Sn plating film (first plating film) 14 is formed on the UBM 11 in the opening 13 by electroplating using an Sn plating solution.
  • the Sn plating solution used is basically a soluble stannous salt, an acid as a solution base or a salt thereof, and if necessary, an antioxidant, a stabilizer, a complexing agent, a surfactant.
  • various additives such as a brightener, a smoothing agent, a pH adjuster, a conductive salt, and a preservative.
  • soluble stannous salt examples include stannous salts of organic sulfonic acids such as methanesulfonic acid, ethanesulfonic acid, 2-propanolsulfonic acid, sulfosuccinic acid, p-phenolsulfonic acid, and borofluoride.
  • stannous, stannous sulfate, stannous oxide, stannous chloride, sodium stannate, potassium stannate and the like can be used.
  • the antioxidant is for preventing oxidation of Sn 2+ in the bath, for example, hypophosphorous acid or a salt thereof, ascorbic acid or a salt thereof, hydroquinone, catechol, resorcin, phloroglucin, cresolsulfonic acid or a salt thereof Phenolsulfonic acid or a salt thereof, catecholsulfonic acid or a salt thereof, hydroquinonesulfonic acid or a salt thereof, hydrazine, or the like can be used.
  • the stabilizer is for preventing the stability or decomposition of the plating bath.
  • cyanide compounds, thioureas, thiosulfates, sulfites, sulfur-containing compounds such as acetylcysteine, and oxycarboxylic acids such as citric acid.
  • Known stabilizers such as acids can be used.
  • the complexing agent is contained in order to stabilize Sn 2+ in the neutral region and prevent white precipitation or decomposition of the bath, such as oxycarboxylic acid, polycarboxylic acid, monocarboxylic acid, and the like.
  • Carboxylic acid and the like can be used, specifically, gluconic acid, citric acid, glucoheptonic acid, gluconolactone, glucoheptlactone, formic acid, acetic acid, propionic acid, butyric acid, ascorbic acid, oxalic acid, malonic acid, Succinic acid, glycolic acid, malic acid, tartaric acid, diglycolic acid, or a salt thereof can be used.
  • gluconic acid citric acid, glucoheptonic acid, gluconolactone, glucoheptlactone, or a salt thereof is preferable.
  • the surfactant contributes to the improvement of the appearance, denseness, smoothness, adhesion and the like of the plating film, and various nonionic, anionic, amphoteric or cationic surfactants can be used.
  • anionic surfactant include alkyl sulfates, polyoxyethylene alkyl ether sulfates, polyoxyethylene alkyl phenyl ether sulfates, alkyl benzene sulfonates, and alkyl naphthalene sulfonates.
  • the cationic surfactant include mono-trialkylamine salts, dimethyldialkylammonium salts, and trimethylalkylammonium salts.
  • Nonionic surfactants include C 1 -C 20 alkanols, phenols, naphthols, bisphenols, C 1 -C 25 alkylphenols, arylalkylphenols, C 1 -C 25 alkyl naphthols, C 1 -C 25 alkoxyl phosphates (salts) ), Sorbitan esters, polyalkylene glycols, C 1 -C 22 aliphatic amides and the like, and 2-300 mol addition-condensation of ethylene oxide (EO) and / or propylene oxide (PO) can be used.
  • EO ethylene oxide
  • PO propylene oxide
  • amphoteric surfactant carboxybetaine, sulfobetaine, imidazoline betaine, aminocarboxylic acid and the like can be used.
  • Examples of the brightener or semi-brightener include benzaldehyde, o-chlorobenzaldehyde, 2,4,6-trichlorobenzaldehyde, m-chlorobenzaldehyde, p-nitrobenzaldehyde, p-hydroxybenzaldehyde, furfural, 1-naphthaldehyde, 2-naphthaldehyde, 2-hydroxy-1-naphthaldehyde, 3-acenaphthaldehyde, benzylideneacetone, pyridideneacetone, furfurylideneacetone, cinnamaldehyde, anisaldehyde, salicylaldehyde, crotonaldehyde, acrolein, glutaraldehyde, para
  • aldehydes such as aldehyde, vanillin, triazine, imidazole, indole, quinoline, 2-vinylpyridine, aniline
  • ⁇ -naphthol As the above-mentioned smoothing agent, although it overlaps with the above-mentioned brightener and the like, ⁇ -naphthol, ⁇ -naphthol-6-sulfonic acid, ⁇ -naphthalenesulfonic acid, m-chlorobenzaldehyde, p-nitrobenzaldehyde, p-hydroxybenzaldehyde, o-, p-) methoxybenzaldehyde, vanillin, (2,4-, 2,6-) dichlorobenzaldehyde, (o-, p-) chlorobenzaldehyde, 1-naphthaldehyde, 2-naphthaldehyde, 2 (4)- Hydroxy-1-naphthaldehyde, 2 (4) -chloro-1-naphthaldehyde, 2 (3) -thiophenecarboxaldehyde, 2 (3) -furaldehyde, 3-
  • Gelatin polypeptone, N- (3-hydroxybutylidene) -p-sulfanilic acid, N-butylidenesulfanilic acid, N-cinnamoylidenesulfanilic acid, 2,4-diamino-6- (2′-methylimidazolyl) (1 ′)) Ethyl-1,3,5-triazine, 2,4-diamino-6- (2′-ethyl-4-methylimidazolyl (1 ′)) ethyl-1,3,5-triazine, 2, 4-Diamino-6- (2′-undecylimidazolyl (1 ′)) ethyl-1,3,5-triazine, phenyl salicylate, or benzothiazoles are also effective as a smoothing agent.
  • benzothiazoles examples include benzothiazole, 2-methylbenzothiazole, 2-mercaptobenzothiazole, 2- (methylmercapto) benzothiazole, 2-aminobenzothiazole, 2-amino-6-methoxybenzothiazole, and 2-methyl.
  • -5-chlorobenzothiazole, 2-hydroxybenzothiazole, 2-amino-6-methylbenzothiazole, 2-chlorobenzothiazole, 2,5-dimethylbenzothiazole, 6-nitro-2-mercaptobenzothiazole, 5-hydroxy -2-Methylbenzothiazole, 2-benzothiazolethioacetic acid and the like can be used.
  • Examples of the pH adjuster include various acids such as hydrochloric acid and sulfuric acid, various bases such as aqueous ammonia, potassium hydroxide, and sodium hydroxide, and monocarboxylic acids such as formic acid, acetic acid, and propionic acid.
  • Dicarboxylic acids such as acids, boric acids, phosphoric acids, oxalic acid and succinic acid, and oxycarboxylic acids such as lactic acid and tartaric acid can also be used.
  • Examples of the conductive salt include sodium salts such as sulfuric acid, hydrochloric acid, phosphoric acid, sulfamic acid, and sulfonic acid, potassium salts, magnesium salts, ammonium salts, and amine salts. Sometimes you can.
  • boric acid 5-chloro-2-methyl-4-isothiazolin-3-one, benzalkonium chloride, phenol, phenol polyethoxylate, thymol, resorcin, isopropylamine, guaiacol, etc. may be used. it can.
  • an Sn plating solution having a composition of 50 g / L of stannous methanesulfone as tin, 100 g / L of methanesulfonic acid, 3 g / L of catechol, and 10 g / L of bisphenol A polyethoxylate (Eo 13 mol) is used.
  • the Sn plating film 14 having a film thickness of 32 ⁇ m is formed with the electroplating conditions of 3 A / dm 2 and 30 ° C.
  • an In plating film (second plating film) 15 is formed on the Sn plating film 14 by electroplating using an In plating solution.
  • the In plating solution to be used basically has a soluble indium salt as an essential component, and an acid or a salt thereof as a bath base, and further, if necessary, an antioxidant, a stabilizer, a complex. Contains various additives such as agents, surfactants, brighteners, smoothing agents, pH adjusters, conductive salts, preservatives.
  • the soluble indium salt for example, indium chloride, indium sulfate, indium oxide, an indium salt of organic sulfonic acid, or the like can be used.
  • electroplating is performed using an In plating solution having a composition of indium chloride of 60 g / L, methanesulfonic acid 200 g / L, glycine 75 g / L, polyvinylpyrrolidone 1 g / L, cystamine 1 g / L, and pH 2.
  • the In plating film 15 having a film thickness of 35 ⁇ m is formed under the conditions of 2 A / dm 2 and 30 ° C.
  • the resist pattern 12 is removed by a method such as etching, and the substrate 10 is subjected to a heat treatment at a peak temperature of 200 ° C. for 3 minutes. 15 is melted to form an alloy bump 16 made of an alloy having a substantially spherical Sn: In mass ratio of 48:52.
  • the heat treatment is not particularly limited as long as the Sn plating film 14 and the In plating film 15 can be melted, and can be appropriately adjusted.
  • the alloy bump is formed by an extremely simple method of forming two plating films of a metal material constituting the alloy bump and then melting them by heat treatment.
  • an alloy bump having a uniform metal component composition can be obtained.
  • the melting temperature is lowered below the melting point of the single metal used in the plating film. This is advantageous because it can be melted at a low temperature.
  • the lower layer is the Sn plating film and the upper layer is the In plating film.
  • the Sn plating film and the In plating film are stacked, it is preferable to stack in this order.
  • the In plating film is formed first, the potential of Sn is higher than that of In. Therefore, when the In plating film is formed and immersed in the Sn plating solution, the In reaction is performed by a substitution reaction before starting the electroplating. Sn is deposited on the surface of the plating film. In this state, the electroplating can be performed normally, but the Sn film deposited by the above substitution reaction has poor adhesion, and therefore there is a risk that the Sn film will fall off in the subsequent resist removal step. Therefore, it is preferable to first form the Sn plating film and then form the In plating film.
  • an alloy bump is formed by melting two plating films on the In plating film formed on the Sn plating film without forming an Sn plating film. It is preferable. It is preferable to do so in order to simplify the process.
  • a resist pattern 22 having an opening 23 for exposing the substrate 20 is formed on the substrate 20 as in the first embodiment. Thereafter, the UBM 21 is formed on the substrate 20 in the opening 23.
  • an Sn plating film 24 is formed as a first plating film using an Sn plating solution.
  • a soluble stannous salt is an essential component in the same manner as in the first embodiment, and an acid or a salt thereof as a solution base, and an antioxidant, a stabilizer, a complex as necessary.
  • Various additives such as an agent, a surfactant, a brightener, a smoothing agent, a pH adjuster, a conductive salt, and a preservative can be added.
  • the composition is 50 g / L of stannous methanesulfonate as tin, 100 g / L of methanesulfonic acid, 1.0 g / L of potassium hydroquinonesulfonate, 3 g / L of sodium alkylnaphthalenesulfonate, 5,5 ′
  • a Sn plating solution of 5 g / L of dithiobis (1-phenyl-1H-tetrazole) and 10 g / L of bisphenol F polyethoxylate (EO 15 mol)
  • the film thickness is 3 A / dm 2 and 30 ° C.
  • An Sn plating film 24 of 30.8 ⁇ m is formed.
  • a Bi plating film (second plating film) 25 is formed on the Sn plating film 24 by electroplating using a Bi plating solution.
  • the Bi plating solution to be used basically has a soluble bismuth salt as an essential component.
  • an acid or a salt thereof as a bath base, and further, if necessary, an antioxidant and a stabilizer.
  • various additives such as complexing agents, surfactants, brighteners, smoothing agents, pH adjusting agents, conductive salts, preservatives.
  • the soluble bismuth salt examples include bismuth sulfate, bismuth oxide, bismuth chloride, bismuth bromide, bismuth nitrate, bismuth salt of organic sulfonic acid, and bismuth salt of sulfosuccinic acid.
  • the composition is 50 g / L using bismuth methanesulfonate as bismuth, 100 g / L methanesulfonic acid, 10 g / L bisphenol A polyethoxylate (EO 13 mol), 0.5 g / L benzyldimethyltetradecylammonium hydroxide.
  • a Bi plating film 25 having a film thickness of 34.2 ⁇ m is formed using the Bi plating solution at an electroplating condition of 2 A / dm 2 and 30 ° C.
  • a third plating film is formed on the Bi plating film 25 by using the same Sn plating solution as that used to form the first plating film.
  • An Sn plating film 26 is formed.
  • the composition of the third plating film is 50 g / L of stannous methanesulfonate as tin, 100 g / L of methanesulfonic acid, 1.0 g / L of potassium hydroquinonesulfonate, 3 g / L of sodium alkylnaphthalenesulfonate.
  • the resist pattern 22 is removed, and the substrate 20 is subjected to a heat treatment at a peak temperature of 260 ° C. for 3 minutes to obtain an Sn plating film (first plating film) 24, a Bi plating film. (Second plating film) 25 and Sn plating film (third plating film) 26 are melted to form alloy bumps 27 made of an alloy having a substantially spherical Bi: Sn mass ratio of 58:42.
  • the conditions for the heat treatment are not particularly limited as long as each plating film can be melted, and can be adjusted as appropriate.
  • the alloy bump is formed by an extremely simple method of forming three plating films of a metal material constituting the alloy bump and then melting them by heat treatment.
  • an alloy bump having a uniform metal component composition can be obtained.
  • an Sn plating film (first plating film), a Bi plating film (second plating film), and an Sn plating film (third plating film) are sequentially stacked.
  • an alloy bump may be manufactured by laminating only the Sn plating film (first plating film) and the Bi plating film (second plating film).
  • the Sn plating film and the Bi plating film are stacked, it is preferable to stack in this order.
  • the first plating film is an Sn plating film.
  • the surface of the Bi plating film is easily oxidized, if the Bi plating film is provided as the uppermost layer, the surface of the Bi plating film may be oxidized and the oxide layer may remain without being melted during the heat treatment.
  • an Sn plating film (first plating film), a Bi plating film (second plating film), and an Sn plating film (third plating film) are sequentially laminated is particularly preferable.
  • alloy bumps made of In—Sn binary alloy and alloy bumps made of Bi—Sn binary alloy are formed. It is also possible to form an original alloy bump or an alloy bump containing a metal component higher than that. For example, when manufacturing an alloy bump made of a ternary alloy, three plating layers each containing a different single metal component are stacked (for example, a Bi plating film, a Sn plating film, and an In plating film), and then subjected to heat treatment. By melting, an alloy bump made of a ternary alloy can be produced.
  • a ternary alloy is obtained by stacking a plating film containing a single metal component (for example, an In plating film) and a binary alloy plating film (for example, a Bi-Sn alloy plating film) and then melting them by heat treatment.
  • An alloy bump made of can also be manufactured.
  • Sn, Bi, and In are used as the metal material.
  • the present invention is not limited to these, and metals such as zinc (Zn) and silver (Ag) can also be used.
  • an alloy bump produced using the method for producing an alloy bump according to the present invention was formed by a conventional method using an alloy plating solution containing a plurality of metal components without laminating a plating film. The uniformity of the composition with the alloy bump was measured and compared.
  • Example 12 alloy bumps of Bi, Sn, and Ag were formed. Specifically, in Example 12, a Bi plating film is formed using the same conditions (excluding the film thickness) as the Bi plating conditions shown in the second embodiment of the present invention, and a composition is formed thereon.
  • Example 13 the Bi plating film and the Sn plating film are sequentially formed using the same conditions (excluding the film thickness) as the Sn plating conditions and Bi plating conditions shown in the second embodiment of the present invention.
  • the electroplating conditions were 2A using an Ag plating solution having a composition of 20 g / L of silver thiosulfate as silver, 450 g / L of sodium thiosulfate, 20 g / L of sodium pyrosulfite, and 1 g / L of PEG4000.
  • An Ag plating film having a film thickness of 0.2 ⁇ m was formed at / dm 2 and 30 ° C.
  • an Sn plating film is formed thereon using the same conditions (excluding the film thickness) as the Sn plating conditions shown in the second embodiment of the present invention, and then melted to form alloy bumps. Formed.
  • the thickness of each plating film is shown in Table 1 below.
  • an alloy bump was formed by forming a one-layer alloy plating film using an alloy plating solution and melting the alloy plating solution by a conventional method.
  • the composition is 15 g / L of stannous methanesulfonate as tin, 40 g / L of bismuth methanesulfonate as bismuth, 100 g / L of methanesulfonic acid, 3,3′-dithiobis-propane.
  • Bi-Sn alloy plating solution of disodium sulfonate 4.5 g / L, styrenated polyethoxylate (EO 10 mol) 5 g / L, and hydroquinone 3.0 g / L
  • the plating conditions were 2 A / dm 2
  • An alloy bump made of an alloy was formed.
  • the composition is 50 g / L of stannous sulfamate as tin, 10 g / L of indium sulfamate as indium, 150 g / L of sulfamic acid, 10 g / L of imidazole, bisphenol A polyethoxylate (Eo 15 mol)
  • the plating conditions were 1.5 A / dm 2 and 30 ° C.
  • An In—Sn alloy plating film having a thickness of 70 ⁇ m is formed, and then heat treatment is performed at a peak temperature of 160 ° C. for 3 minutes to melt and the mass ratio of substantially spherical In and Sn is 52:48 and 65:35.
  • An alloy bump made of an alloy was formed.
  • composition of the alloy bumps was analyzed using an energy dispersive X-ray analyzer (EDX) for the alloy bumps of the examples and comparative examples.
  • EDX energy dispersive X-ray analyzer
  • Table 1 below shows the differences in thickness and composition, alloy ratio, and alloy ratio of the UBM and the plating films of each Example and Comparative Example.
  • Examples 1 to 19 which are alloy bumps formed using the manufacturing method according to the present invention are compared with Comparative Examples 1 to 3 which are alloy bumps formed using a conventional method.
  • the difference in alloy ratio is small and the composition is uniform.
  • Examples 12 and 13 when the manufacturing method of the present invention is used, even when forming not only binary alloy bumps but also ternary alloy bumps, alloy bumps having a uniform composition can be obtained. it can.
  • the plating film to be formed is not limited to two layers, and the composition is not limited to three or more layers. A uniform alloy bump can be formed.
  • composition uniformity of the alloy bump formed using the method for producing an alloy bump of the present invention the composition of the metal component in each of the lower layer region, the middle layer region, and the upper layer region of the alloy bump.
  • the ratio was compared by EDX analysis.
  • the composition is 50 g / L on a UBM made of Ni with stannous methanesulfonate as tin, 100 g / L of methanesulfonate, 1.0 g / L of catecholsulfonate.
  • the electroplating conditions are 3 A / dm 2 , 30 ° C., and the film thickness is 26.1 ⁇ m.
  • EDX analysis was performed on In—Sn alloy bumps formed by melting them. Specifically, EDX mapping is performed on this alloy bump, and the measurement results of the composition ratio of In and Sn in the lower, middle, and upper layers of the bumps equally divided into three are shown in Table 2 below. .
  • the composition is 50 g / L of stannous methanesulfonate as tin, 100 g / L of methanesulfonic acid, 1.0 g / L of potassium hydroquinonesulfonate, 0.5 g / L of benzyltributylammonium hydroxide.
  • an In plating solution having a composition of 50 g / L, indium sulfamate as indium, 50 g / L sulfamic acid, 100 g / L sodium sulfamate, 10 g / L sodium chloride, and 3 g / L triethanolamine on a UBM made of Ni.
  • the In plating film having a film thickness of 32.3 ⁇ m at an electroplating condition of 3 A / dm 2 , 30 ° C., and the composition of 50 g / L of bismuth methanesulfonate as bismuth, 100 g / L of methanesulfonate, and 10 g of PEG 20000
  • a Bi plating film having a film thickness of 4.7 ⁇ m with an electroplating condition of 2 A / dm 2 and 30 ° C. using a Bi plating solution of / L, distearyldimethylammonium chloride 0.2 g / L, and further composition Is 50 g / L of indium sulfamate as indium.
  • the plurality of metal components contained in each alloy plating formed by the method for producing an alloy bump of the present invention has a content ratio in each region in the lower layer region, middle layer region and upper layer region. It can be seen that there is almost no difference and each is distributed uniformly.
  • an alloy bump having a uniform composition can be easily obtained.

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Abstract

La présente invention concerne un procédé de fabrication de bosses en alliage selon lequel un motif de réserve (12) muni d'ouvertures (13) qui exposent un substrat (10) est formé sur le substrat (10) ; un métal sous-bosse (11) est formé sur le substrat (10) à l'intérieur des ouvertures (13) ; un premier film de placage (14) est formé sur le métal sous-bosse (11) par électrodéposition ; un deuxième film de placage (15) qui ne contient pas de composantes métalliques contenues dans le premier film de placage (14) est formé sur le premier film de placage (14) par électrodéposition ; le motif de réserve (12) est retiré ; et des bosses en alliage (16) sont formées par traitement thermique du substrat (10) afin d'allier ainsi le premier film de placage (14) et le deuxième film de placage (15).
PCT/JP2015/078804 2014-10-10 2015-10-09 Procédé de fabrication d'une bosse en alliage WO2016056656A1 (fr)

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EP15849378.3A EP3206225A4 (fr) 2014-10-10 2015-10-09 Procédé de fabrication d'une bosse en alliage
KR1020177020278A KR101778498B1 (ko) 2014-10-10 2015-10-09 합금 범프의 제조방법
JP2016553173A JPWO2016056656A1 (ja) 2014-10-10 2015-10-09 合金バンプの製造方法
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US10062657B2 (en) 2014-10-10 2018-08-28 Ishihara Chemical Co., Ltd. Method for manufacturing alloy bump
JP2021041430A (ja) * 2019-09-11 2021-03-18 株式会社新菱 Ｓｎ−Ｂｉ−Ｉｎ系低融点接合部材および半導体電子回路
JP2021048392A (ja) * 2019-09-11 2021-03-25 株式会社新菱 Ｓｎ−Ｂｉ−Ｉｎ系低融点接合部材および半導体電子回路
JP2021048391A (ja) * 2019-09-11 2021-03-25 株式会社新菱 Ｓｎ−Ｂｉ−Ｉｎ系低融点接合部材および、その製造方法、ならびに半導体電子回路およびその実装方法
WO2022050186A1 (fr) * 2020-09-04 2022-03-10 株式会社新菱 Élément d'assemblage à bas point de fusion à base de sn-in, son procédé de production, circuit électronique à semi-conducteurs et son procédé de montage
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US20180016690A1 (en) 2016-07-18 2018-01-18 Rohm And Haas Electronic Materials Llc Indium electroplating compositions containing 2-imidazolidinethione compounds and methods for electroplating indium
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JP7335036B2 (ja) * 2019-03-29 2023-08-29 ラピスセミコンダクタ株式会社 半導体パッケージの製造方法
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US10062657B2 (en) 2014-10-10 2018-08-28 Ishihara Chemical Co., Ltd. Method for manufacturing alloy bump
JP2021041430A (ja) * 2019-09-11 2021-03-18 株式会社新菱 Ｓｎ−Ｂｉ−Ｉｎ系低融点接合部材および半導体電子回路
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US20170330850A1 (en) 2017-11-16
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TWI689631B (zh) 2020-04-01
TW201619447A (zh) 2016-06-01
EP3206225A1 (fr) 2017-08-16
US10062657B2 (en) 2018-08-28
KR20170087969A (ko) 2017-07-31
EP3206225A4 (fr) 2018-07-04

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