JP4724192B2 - 電子部品の製造方法 - Google Patents

電子部品の製造方法 Download PDF

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Publication number
JP4724192B2
JP4724192B2 JP2008047950A JP2008047950A JP4724192B2 JP 4724192 B2 JP4724192 B2 JP 4724192B2 JP 2008047950 A JP2008047950 A JP 2008047950A JP 2008047950 A JP2008047950 A JP 2008047950A JP 4724192 B2 JP4724192 B2 JP 4724192B2
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Japan
Prior art keywords
film
metal
solder
manufacturing
electronic component
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Expired - Fee Related
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JP2008047950A
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JP2009206334A (ja
Inventor
匡 飯島
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Toshiba Corp
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Toshiba Corp
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Priority to JP2008047950A priority Critical patent/JP4724192B2/ja
Priority to TW098103292A priority patent/TWI429790B/zh
Priority to US12/369,794 priority patent/US20090218230A1/en
Publication of JP2009206334A publication Critical patent/JP2009206334A/ja
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Publication of JP4724192B2 publication Critical patent/JP4724192B2/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3473—Plating of solder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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Description

本発明は、半田バンプからなる接続端子を備えた電子部品の製造方法に関する。
従来から、半導体チップ上に形成された半田バンプにより半導体チップとＢＧＡ基板等のインターポーザ基板とをフリップチップ接続する技術が知られている。半田バンプには、これまでＳｎ−Ｐｂ等のＰｂ系半田が用いられてきたが、近年は、環境保全の観点からＰｂを含まない無鉛半田（例えば、Ｓｎ−Ｃｕ、Ｓｎ−Ａｇ−Ｃｕ等）に置き換わりつつある。
かかる無鉛半田からなるバンプの形成方法として、半田の構成元素のＣｕからなる層を基板上にスパッタリングなどにより下地金属（ＵＢＭ：under bump metal）層として形成し、その上に電解めっきによりＳｎ半田またはＳｎ−Ａｇ半田を堆積し、その後、半田をリフローする際に、ＵＢＭ層のＣｕを半田内に溶解させ、それぞれＳｎ−ＣｕまたはＳｎ−Ａｇ−Ｃｕ半田を形成する方法が提案されている（例えば、特許文献1参照。）。この方法は、半田の第２または第３の元素であるＣｕをＵＢＭ層から取り込むことで、めっきを行う元素数を減らし、めっき工程の簡素化を図ろうとするものである。すなわち、めっき工程は、めっき元素数が多くなるほど、めっき液の化学的性質の維持や組成の精密な制御が複雑となる。めっきする元素数を減らすことによって、このような複雑な管理、制御を単純化できると考えられる。
ところで、この方法においては、Ｓｎ半田またはＳｎ−Ａｇ半田をめっき後、バンプ形成部分以外のＵＢＭ層を除去する必要がある。このＵＢＭ層の除去には、ウエットエッチング、ドライエッチング等が用いられるが、生産性や経済性の観点からは処理速度の速いウエットエッチングが適している。しかしながら、ウエットエッチングを用いた場合、エッチングが等方的に進行するため、めっき層下のＵＢＭ層（Ｃｕ層）に比較的大きなアンダーカットを生じる。その結果、半田バンプの最終組成が変化し、融点の変化や機械的強度の低下により、実装の歩留まり低下を招くおそれがあった。また、近年、半田バンプは狭ピッチ化（例えば、５０μｍ以下）が進んでいるが、この場合、アンダーカットの半田組成に与える影響は特に大きい。さらに、アンダーカット量が多くなると半田リフロー後のバンプ径が小さくなってその制御が難しく、かつ下地との密着性が低下して剥がれが生じやすくなってしまう。このため、狭ピッチの半田バンプの形成には、ウエットエッチングを用いた上記方法を適用できず、生産性や経済性の向上が図れないという問題があった。
特開２００５−２９４８２７号公報
本発明の目的は、半田バンプの構成元素を含むＵＭＢ層をウエットエッチング法により除去する際のアンダーカットの発生を防止することができる電子部品の製造方法を提供することにある。
本発明の一態様によれば、基板上に半田バンプを形成する電子部品の製造方法であって、前記基板上に第１の金属からなる膜を形成する工程（Ａ）と、置換めっきにより、前記第１の金属からなる膜を部分的に、前記第１の金属より貴の金属である第２の金属を含む膜に変換する工程（Ｂ）と、前記第２の金属を含む膜上に、第３の金属からなる膜を形成する工程（Ｃ）と、前記第３の金属からなる膜をマスクとして前記第２の金属を含む膜以外の第１の金属からなる膜をウエットエッチングにより除去する工程（Ｄ）とを具備することを特徴とする電子部品の製造方法が提供される。
本発明の一態様による電子部品の製造方法によれば、半田バンプの構成元素を含むＵＭＢ層をウエットエッチング法により除去する際のアンダーカットの発生を防止することができる。
以下、本発明の実施の形態について説明する。なお、以下では本発明の実施の形態を図面に基づいて説明するが、それらの図面は図解のために提供されるものであり、本発明はそれらの図面に限定されるものではない。
（第１の実施の形態）
第１の実施の形態について説明する。図１（ａ）〜（ｇ）は本実施形態に係る電子部品の製造方法の工程を示す断面図である。本実施の形態では、電子部品にＳｎ−Ａｇ−Ｃｕ三元系無鉛半田またはＳｎ−Ａｇ二元系無鉛半田からなるバンプを形成する場合を説明する。
まず、図１（ａ）に示すように、図示しない電極パッドおよびパッシベーション膜が設けられた半導体チップ等の電子部品の基板１１上に、ＵＢＭ層１２として、例えば５０００オングストローム厚のＴｉ膜１３、および例えば１μｍ厚のＣｕ膜１４を、無電解めっき、蒸着、スパッタリング等により順に成膜する。なお、ＵＢＭ層１２の第１層は、Ｔｉの他、Ｔａ、Ｗ、Ｃｒ、Ｖ、Ｚｒ、Ｎｉ、これらの合金または化合物などで構成してもよく、また、これらの膜を複数積層する積層構造としてもよい。
次に、図１（ｂ）に示すように、スピンコート技術を用いてＣｕ膜１４上に例えば７０μｍ厚のレジスト膜１５を積層した後、リソグラフィ技術を用いてバンプを形成する箇所にのみレジスト膜１５に、例えばその外接円の直径が１００μｍからなる八角形状の開口１５ａを形成する。
次に、図１（ｃ）に示すように、ＵＢＭ層１２（Ｃｕ層１４）に通電するとともに開口１５ａ内にＡｇめっき液を供給して、電解めっきにより、開口１５ａの底部に露出するＣｕ膜１４上に、Ｃｕより貴の金属であるＡｇからなる膜１６を形成する。この際、ＵＢＭ層１２への通電に先立って、ＣｕとＡｇの電位差を利用して、Ｃｕの少なくとも一部をＡｇに置換する置換めっきを行い、Ｃｕ膜１４の開口１５ａの底部に露出する部分を選択的にＣｕ−Ａｇ（もしくはＡｇ）からなる膜１４ａに変換させる。その後、通電を開始して、例えば１μｍ厚のＡｇ膜１６を形成する。
なお、ＣｕのＡｇへの置換の割合や、形成するＡｇ膜１６の厚さは、最終的に形成しようとする半田バンプの組成により適宜定められる。したがって、場合により、Ａｇ膜１６を形成せず、置換めっきのみ行うことも可能である、この場合、Ｃｕ−Ａｇ（もしくはＡｇ）膜１４ａの直上に、後述するＳｎ膜１７が形成される。また、Ｃｕの一部をＡｇに置換させた場合、その後に熱処理することによって、合金化もしくは化合物化してもよい。合金化もしくは化合物化することによって、後述するＣｕウエットエッチングの際のエッチング選択性をより高められる利点を有する。
次に、図１（ｄ）に示すように、ＵＢＭ層１２に通電するとともに開口１５ａ内にＳｎめっき液を供給して、電解めっきにより、開口１５ａの底部に露出するＡｇ膜１６上、またはＣｕ−Ａｇ（もしくはＡｇ）膜１４ａ上に、例えば５０μｍ厚のＳｎ膜１７を形成する。このＳｎ膜１７の厚さも、最終的に形成しようとする半田バンプの組成により適宜定められる。なお、Ｓｎ膜１７は、電解めっきによらず、蒸着、スパッタリング、無電解めっき、その他の一般に知られる方法により形成してもよい。
次に、図１（ｅ）に示すように、レジスト膜１５をレジスト剥離液等の薬液を用いて剥離した後、Ｓｎ膜１７、または、Ｓｎ膜１７およびＡｇ膜１６をマスクとしてＣｕ膜１４をウエットエッチングにより除去する。この際、エッチング液として、アンモニアと過酸化水素水、硫酸と過酸化水素水、燐酸と過酸化水素水等の、Ｃｕは溶解するが少なくともＡｇは溶解しないかもしくは溶解し難いエッチング液を使用する。具体的には、Ｃｕ用エッチング液として市販されている三菱ガス化学社製のＷＬＣ−Ｃ（商品名）等が好適に使用される。このようなエッチング液を用いることにより、Ｃｕ膜１４のみが選択的に除去され、ウエットエッチングにともなうＳｎ膜１７およびＡｇ膜１６下のアンダーカットの発生を抑制乃至防止することができる。
すなわち、図２は、Ｃｕ膜１４にＣｕ−Ａｇ（もしくはＡｇ）膜１４ａを設けることなくＡｇ膜１６およびＳｎ膜１７を形成した以外は、本実施の形態と同様にして成膜した後、Ｃｕ膜１４にウエットエッチング処理した場合の例を示したもので、Ｃｕ膜１４のＳｎ膜１７およびＡｇ膜１６下に明らかにアンダーカット１８が発生していることがわかる。本実施の形態においては、Ｃｕ膜１４の開口１５ａの底部に露出する部分を選択的にＣｕ−Ａｇ（もしくはＡｇ）からなる膜１４ａに変換し、かつＣｕは溶解するが少なくともＡｇは溶解しないかもしくは溶解し難いエッチング液を使用しているので、Ｃｕ膜１４のみを選択的に除去することができ、Ｓｎ膜１７およびＡｇ膜１６下のアンダーカットの発生を抑制乃至防止することができる。
次に、図１（ｆ）に示すように、ＵＢＭ層１２の第１層のＴｉ膜１３を、Ｓｎ膜１７、Ａｇ膜１６およびＣｕ−Ａｇ（もしくはＡｇ）膜１４ａをマスクとしてウエットエッチングにより除去する。エッチング液としては、Ｓｎ膜１７、Ａｇ膜１６およびＣｕ−Ａｇ（もしくはＡｇ）膜１４ａを溶解しないものが好ましく、例えば０．５〜１質量％程度に希釈した希フッ酸、ＫＯＨと過酸化水素水、Ｔｉ用エッチング液として市販されている三菱ガス化学社製のＷＬＣ−Ｔ（商品名）等が好適に使用される。Ｔｉ膜１３はＣｕ−Ａｇ（もしくはＡｇ）膜１４ａが形成されたＣｕ膜１４と異なり全体が同質であるため、Ｃｕ−Ａｇ（もしくはＡｇ）膜１４ａ下にアンダーカット１８が発生する。しかしながら、その量は、例えばＣｕ−Ａｇ（もしくはＡｇ）膜１４ａの端部からウエットエッチング後のＴｉ膜１３の端部までの距離が例えば０．１μｍ程度と非常に小さく、また、半田バンプの最終組成に影響することもないので、実用上問題となることはない。
その後、図１（ｇ）に示すように、通常の半田リフロー処理を行う。この処理によりＳｎ膜１７とＡｇ膜１６とＣｕ−Ａｇ（もしくはＡｇ）膜１４ａが共晶化して合金化し、Ｓｎ、ＡｇおよびＣｕの各元素の成分比に応じたＳｎ−Ａｇ−Ｃｕ三元系またはＳｎ−Ａｇ二元系の半田バンプ１９が形成される。なお、リフロー処理工程はＴｉ膜１３を除去する前に行ってもよい。この場合、Ｓｎ−Ａｇ−Ｃｕ三元系またはＳｎ−Ａｇ二元系の半田バンプ１９がＴｉ膜１３をウエットエッチングする際のマスクとして使用される。
本実施の形態では、ＵＢＭ層１２として形成したＣｕ膜１４の半田バンプ形成部分を、Ｃｕ−Ａｇ（もしくはＡｇ）膜１４ａに変換させているので、半田バンプ形成部分以外のＣｕ膜１４をウエットエッチング法により除去する際に、その除去すべきＣｕ膜１４のみを選択的に除去することができ、アンダーカットの発生を抑制乃至防止することができる。これにより、半田バンプの最終組成を精密に制御することが可能になり、融点の変化や機械的強度、密着性の低下による実装の歩留まり低下を防止することができる。また、狭ピッチの半田バンプであってもその最終組成、寸法を精密に制御することができるため、Ｃｕ膜のエッチングにウエットエッチングを適用することが可能になり、狭ピッチの半田バンプを含む電子部品の生産性の向上および製造コストの低減を図ることができる。
（その他の実施の形態）
上記第１の実施の形態では、Ｓｎ−Ａｇ−Ｃｕ三元系無鉛半田またはＳｎ−Ａｇ二元系無鉛半田からなるバンプを形成する場合について説明したが、このような組成以外の半田からなるバンプを形成する場合も、材料や工程を適宜選択することによって広く適用可能であることはいうまでもない。
例えば、第１の実施の形態において、Ａｇ膜１６に代えてＡｕ膜を形成した場合には、Ｓｎ−Ａｕ−Ｃｕ三元系無鉛半田またはＳｎ−Ａｕ二元系無鉛半田からなるバンプを形成することができる。Ｃｕ膜１４に代えてＢｉ膜を形成した場合には、Ｓｎ−Ａｇ−Ｂｉ三元系無鉛半田またはＳｎ−Ａｇ二元系無鉛半田からなるバンプを形成することができる。この場合、さらに、Ａｇ膜１６に代えてＡｕ膜を形成すると、Ｓｎ−Ａｕ−Ｂｉ三元系無鉛半田またはＳｎ−Ａｕ二元系無鉛半田からなるバンプを形成することができる。Ｃｕ膜１４に代えてＡｇ膜を形成し、Ａｇ膜１６に代えてＡｕ膜を形成した場合には、Ｓｎ−Ａｕ−Ａｇ三元系無鉛半田またはＳｎ−Ａｕ二元系無鉛半田からなるバンプを形成することができる。
また、Ｓｎ膜１７上またはＳｎ膜１７下に１層もしくはそれ以上の他の金属からなる膜をさらに成膜することも可能であり、これにより四元系以上の半田（例えば、Ｓｎ−Ａｇ−Ｉｎ−Ｂｉ等）からなるバンプの形成が可能となる。
さらに、上記第１の実施の形態では、Ｃｕ膜１４を部分的にＣｕ−Ａｇ（もしくはＡｇ）膜１４ａに変換する工程は、置換めっき法により行っているが、Ｃｕ−Ａｇ（もしくはＡｇ）膜１４ａ、つまりＡｇを含む膜に変換できれば特にそのような方法に限定されるものではない。置換めっき法を使用した場合には、置換する金属に対し、置換される金属（Ｃｕ、Ｂｉ等）が電気化学的に卑である必要があるが、他の方法を適用した場合には、そのような制限はなくなり、金属種の選択の自由度を増大させることができる。
本発明は、以上説明した実施の形態の記載内容に限定されるものではなく、構造や材質、各部材の配置等は、本発明の要旨を逸脱しない範囲で適宜変更可能である。
第１の実施の形態に係る電子部品の製造方法の工程を示す断面図である。 第１の実施の形態との対比としてアンダーカットが発生した例を示す断面図である。
符号の説明
１１…基板、１２…ＵＢＭ層、１３…Ｔｉ膜、１４…Ｃｕ膜、１４ａ…Ｃｕ−Ａｇ（もしくはＡｇ）膜１４ａ、１５…レジスト膜、１５ａ…開口、１６…Ａｇ膜、１７…Ｓｎ膜、１８…アンダーカット、１９…半田バンプ。

Claims (4)

  1. 基板上に半田バンプを形成する電子部品の製造方法であって、
    前記基板上に第１の金属からなる膜を形成する工程（Ａ）と、
    置換めっきにより、前記第１の金属からなる膜を部分的に、前記第１の金属より貴の金属である第２の金属を含む膜に変換する工程（Ｂ）と、
    前記第２の金属を含む膜上に、第３の金属からなる膜を形成する工程（Ｃ）と、
    前記第３の金属からなる膜をマスクとして前記第２の金属を含む膜以外の第１の金属からなる膜をウエットエッチングにより除去する工程（Ｄ）と
    を具備することを特徴とする電子部品の製造方法。
  2. 前記第１の金属は、Ｃｕ、Ａｇ及びＢｉから選ばれる１種であり、前記第２の金属は、ＡｇまたはＡｕであることを特徴とする請求項１記載の電子部品の製造方法。
  3. 前記工程（Ｄ）の後、前記第３の金属からなる膜及び前記第２の金属を含む膜にリフロー処理を施すことを特徴とする請求項１または２記載の電子部品の製造方法。
  4. 前記工程（Ｂ）の後、前記工程（Ｃ）に先立って、前記第２の金属を含む膜に熱処理を施して、前記第２の金属を含む膜内の第１の金属と第２の金属を合金化または化合物化することを特徴とする請求項１乃至３のいずれか１項記載の電子部品の製造方法。
JP2008047950A 2008-02-28 2008-02-28 電子部品の製造方法 Expired - Fee Related JP4724192B2 (ja)

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JP2008047950A JP4724192B2 (ja) 2008-02-28 2008-02-28 電子部品の製造方法
TW098103292A TWI429790B (zh) 2008-02-28 2009-02-02 製造電子零件之方法
US12/369,794 US20090218230A1 (en) 2008-02-28 2009-02-12 Method of producing electronic component

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