TWI429790B - 製造電子零件之方法 - Google Patents

製造電子零件之方法 Download PDF

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Publication number
TWI429790B
TWI429790B TW098103292A TW98103292A TWI429790B TW I429790 B TWI429790 B TW I429790B TW 098103292 A TW098103292 A TW 098103292A TW 98103292 A TW98103292 A TW 98103292A TW I429790 B TWI429790 B TW I429790B
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Taiwan
Prior art keywords
metal
film
electronic component
component according
manufacturing
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TW098103292A
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English (en)
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TW201000687A (en
Inventor
Tadashi Iijima
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Toshiba Kk
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Publication of TW201000687A publication Critical patent/TW201000687A/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3473—Plating of solder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
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Description

製造電子零件之方法
本發明係關於一種製造一電子零件之方法，該電子零件具有一由一焊料凸塊構成之連接端子。
此申請案基於並主張2008年2月28日提出申請之先前日本專利申請案第2008-047950號之優先權之權益；該申請案之整個內容以引用方式併入本文中。
存在一經由在一半導體晶片上形成之一焊料凸塊執行對該半導體晶片及一插入基板(例如一BGA基板)之倒裝晶片連接之習知技術。此前，一基於Pb之焊料(例如一Sn-Pb焊料)一直用於焊料凸塊，但這些年鑒於環境保護措施，現在其被一不含Pb之無鉛焊料(例如，Sn-Cu、Sn-Ag-Cu等)替換。
作為一種形成此一無鉛焊料凸塊之方法，建議一種藉由以下步驟形成一Sn-Cu焊料凸塊或一Sn-Ag-Cu焊料凸塊之方法：藉由濺射或類似方法在一基板上形成一焊料構成元素Cu之層作為一凸塊下金屬(UBM)層；藉由電解鍍覆在其上沈積一Sn焊料或一Sn-Ag焊料；且當回流焊料時，回流以將UBM層中之Cu蝕刻在焊料中。此方法自UBM層吸收焊料之第二或第三元素Cu以減少鍍覆元素之數目，因此簡化了鍍覆過程。特定而言，鍍覆過程隨鍍覆元素數目增加在維持一鍍覆溶液之化學性質及對組合物之精確控制方面變得複雜。人們認為可藉由減少鍍覆元素之數目簡化此複雜管理及控制。
上述方法需要在鍍覆Sn焊料或Sn-Ag焊料後自除凸塊形成部分外之部分移除UBM層。使用濕式蝕刻、幹式蝕刻或類似方法移除UBM層，但在生產率及經濟效率方面濕式蝕刻合適，此乃因其具有一快速處理速度。然而，當使用濕式蝕刻時，蝕刻各向同性地進行且在鍍覆層下方之UBM層(Cu層)中產生相對大側蝕。因此，焊料凸塊之最終組合物發生變化進而改變熔點或減弱機械強度，此可能導致安裝良率之一降低。這些年將焊料凸塊配置成一狹窄間距圖案(例如，50 μm或低於50 μm)且因此該焊料組合物上之側蝕效應尤其大。另外，若一側蝕量變大，則焊料回流後凸塊之直徑變小、其控制變得困難、至基板之黏著性減弱，且容易出現剝落。因此，上述使用濕式蝕刻之方法不能應用於形成狹窄間距圖案化之焊料凸塊，且因此還存在一不能改良生產率及經濟效率之問題。
根據本發明之一態樣，提供一種製造一電子零件之方法，其包括：在一基板上方形成一第一金屬之一膜；藉由用一第二金屬替換該第一金屬之至少部分來將該第一金屬之膜部分地轉換為一含有該第二金屬之膜；在含有該第二金屬之膜上方形成一第三金屬之一膜；且使用第三金屬之膜作為一遮罩藉由濕式蝕刻移除除了含有第二金屬之膜的第一金屬之膜。
參照圖式闡述本發明之各實施例，該等圖式僅供圖解闡釋之目的，且本發明並不侷限於該等圖式。(第一實施例)
下文闡述一第一實施例。圖1A至圖1G係根據此實施例顯示用於一電子零件製造之處理步驟之剖視圖。在此實施例中，闡述在一電子零件上形成一Sn-Ag-Cu三元無鉛焊料凸塊或一Sn-Ag二元無鉛焊料凸塊。
如圖1A中所示，藉由除電解鍍覆外之方法，例如無電鍍覆、氣相沈積或濺射，在一電子零件(例如一半導體晶片)之基板11上按順序形成一具有一(例如)5000埃厚度之Ti膜13及一具有一(例如)1 μm厚度之Cu膜14作為一UBM層12，在該基板11上配置有未顯示之電極墊及鈍化膜。UBM層12之一第一層可由Ti、Ta、W、Cr、V、Zr、Ni或由組合其中之任何兩者或更多者產生之合金或複合物構成且亦可具有一層壓結構，該層壓結構具有使此等以複數形式層壓之膜。
如圖1B中所示，藉由一旋轉塗佈技術將一具有一(例如)70 μm厚度之抗蝕劑膜15層壓在Cu膜14上，且然後藉由一微影技術在抗蝕劑膜15中僅於形成一凸塊之部分處形成一具有例如一100 μm直徑之一外切圓之八邊形開口15A。
如圖1C中所示，當電流通過UBM層12(Cu層14)且還將一Ag鍍覆溶液供應至開口15A中時，藉由電解鍍覆在曝露在開口15A底部之Cu膜14上形成一由比Cu貴重之金屬Ag構成之膜16。此時，在電流通過UBM層12之前，使用Cu與Ag之間的電位差執行置換鍍覆以用Ag置換至少部分Cu，以便將Cu膜14之曝露在開口15A底部之部分選擇性地轉換為一由Cu-Ag(或Ag)構成之膜14A。然後，電流開始通過以形成具有一(例如)1 μm厚度之Ag膜16。
Cu被Ag替換之比率及欲形成之Ag膜16之厚度均根據最終欲形成之焊料凸塊之組合物適當地確定。因此，亦可僅執行置換鍍覆而不形成Ag膜16，且後面所述之一Sn膜17就形成於Cu-Ag(或Ag)膜14A上方。當Cu部分地被Ag替換時，可接著執行熱處理以進行熔合或複合。熔合或複合提供一優點：對於後面所述之Cu濕式蝕刻可進一步提高蝕刻選擇性。
如圖1D中所示，當電流通過UBM層12且還將一Sn鍍覆溶液供應至開口15A中時，藉由電解鍍覆在曝露在開口15A底部之Ag膜16或Cu-Ag(或Ag)膜14A上形成具有一(例如)50 μm厚度之Sn膜17。Sn膜17之厚度亦根據最終欲形成之焊料凸塊之組合物適當地確定。Sn膜17可藉由除電解鍍覆外之一眾所周知之方法形成，例如氣相沈積、濺射或無電鍍覆。
如圖1E中所示，在藉由一化學試劑(例如，一抗蝕劑剝除溶液)移除抗蝕劑膜15後，使用Sn膜17或Sn膜17及Ag膜16作為一遮罩藉由濕式蝕刻移除Cu膜14。使用一蝕刻Cu但不蝕刻Ag或至少蝕刻Ag比蝕刻Cu難之溶液作為一蝕刻溶液，其包含一氨-過氧化氫混合物、一硫酸-過氧化氫混合物及一磷酸-過氧化氫混合物。具體而言，較佳使用一由三菱瓦斯化學株式會社(MITSUBISHI GAS CHEMICAL COMPANY,INC.)生產之WLC-C(商品名稱)或市場上可購得之類似物作為一用於Cu之蝕刻溶液。使用此一蝕刻溶液僅選擇性移除Cu膜14且可抑制或防止在涉及濕式蝕刻之Sn膜17及Ag膜16下方產生一側蝕。
圖2顯示以與本實施例中相同之方式形成一膜之後(除在Cu膜14上形成Ag膜16及Sn膜17而未形成Cu-Ag(或Ag)膜14A以外)，使Cu膜14經受濕式蝕刻過程之一實例，且可看到在Sn膜17及Ag膜16下方產生Cu膜14之一側蝕18。在此實施例中，將Cu膜14中一曝露在開口15A底部之一部分選擇性地轉換為包括Cu-Ag(或Ag)之膜14A，且使用一蝕刻Cu但不蝕刻Ag或至少難以蝕刻Ag之蝕刻溶液，以便可選擇性地僅移除Cu膜14，且可抑制或防止在Sn膜17及Ag膜16下方產生一側蝕。
如圖1F中所示，使用Sn膜17、Ag膜16及Cu-Ag(或Ag)膜14A作為一遮罩藉由濕式蝕刻移除UBM層12之第一層Ti膜13，其藉由移除Cu膜14而曝露。期望蝕刻溶液不蝕刻Sn膜17、Ag膜16及Cu-Ag(或Ag)膜14A。舉例而言，較佳使用一稀釋至大約0.5至1 wt%之稀釋氫氟酸溶液、一KOH及過氧化氫溶液或一由三菱瓦斯化學株式會社生產之市場上可購得之WLC-T(商品名稱)作為一用於Ti之蝕刻溶液。與具有形成之Cu-Ag(或Ag)膜14A之Cu膜14不同，Ti膜13係完全均質，因此在Cu-Ag(或Ag)膜14A下方產生側蝕18。但其量在實際使用中不成問題，此乃因(例如)濕式蝕刻後Cu-Ag(或Ag)膜14A之一端與Ti膜13之一端之間的距離係與(例如)大約0.1 μm一樣小，此對焊料凸塊之最終組合物無影響。
然後，如圖1G中所示，進行一普通焊料回流過程。此過程產生Sn膜17、Ag膜16及Cu-Ag(或Ag)膜14A之一共晶合金以形成對應於個別元素Sn、Ag及Cu之一成份比率一Sn-Ag-Cu三元或一Sn-Ag二元焊料凸塊19。可在移除Ti膜13之前執行該回流過程。在此情況下，使用Sn-Ag-Cu三元或Sn-Ag二元焊料凸塊19作為用於Ti膜13之濕式蝕刻之一遮罩。
在此實施例中，由於將形成為UBM層12之Cu膜14之焊料凸塊形成部分轉換為Cu-Ag(或Ag)膜14A，因此當藉由濕式蝕刻方法移除除焊料凸塊形成部分外之部分之Cu膜14時，可選擇性僅移除欲被移除之Cu膜14，且可抑制或防止產生側蝕。因此，可精確控制焊料凸塊之最終組合物，且可防止因熔點之一改變或機械強度或黏著性之一降低所致之安裝良率之一降低。即使焊料凸塊具有一狹窄間距圖案，亦可精確控制其最終組合物及尺寸，以使得將濕式蝕刻應用於Cu膜蝕刻成為可能，可改良一包含狹窄間距圖案化之焊料凸塊之電子零件之生產率，且可減少製造成本。
(其他實施例)
在第一實施例中，闡述了形成Sn-Ag-Cu三元無鉛焊料凸塊或Sn-Ag二元無鉛焊料凸塊。但在一由不具有以上組合物之一焊料形成凸塊之情況下，該實施例亦可藉由適當選擇材料及過程而被廣泛應用。
舉例而言，當在第一實施例中形成一Au膜代替Ag膜16時，凸塊可由一Sn-Au-Cu三元無鉛焊料或一Sn-Au二元無鉛焊料形成。當形成一Bi膜代替Cu膜14時，凸塊可由一Sn-Ag-Bi三元無鉛焊料或一Sn-Ag二元無鉛焊料形成。在此情況下，當形成一Au膜代替Ag膜16時，凸塊可由一Sn-Au-Bi三元無鉛焊料或一Sn-Au二元無鉛焊料形成。當形成一Ag膜代替Cu膜14且形成一Au膜代替Ag膜16時，凸塊可由一Sn-Au-Ag三元無鉛焊料或一Sn-Au二元無鉛焊料形成。
亦可在Sn膜17上/下形成一或多個其他金屬膜。因此，可形成一四元或多元焊料(例如，Sn-Ag-In-Bi)之凸塊。
在第一實施例中，藉由置換鍍覆方法執行將Cu膜14部分地轉換為Cu-Ag(或Ag)膜14A之過程。但以上過程並非唯一，只要可執行轉換為Cu-Ag(或Ag)膜14A，即含有Ag之膜。當使用置換鍍覆方法時，欲被替換之金屬(Cu、Bi或類似物)比替換金屬在電化學方面較不貴重係必要的，但若應用另一方法，則消除此侷限且可增加選擇金屬種類之靈活性。
本發明並不侷限於上述實施例之說明。在不背離本發明精神及範疇之情況下，可適當修改個別部件之結構、材料品質、配置等。
11．．．基板
12．．．UBM層
13．．．Ti膜
14．．．Cu膜
14A．．．Cu-Ag(或Ag)膜
15．．．抗蝕劑膜
15A．．．開口
16．．．Ag膜
17．．．Sn膜
18．．．側蝕
19．．．焊料凸塊
圖1A至1G係根據一第一實施例顯示製造一電子零件之一方法之處理步驟之剖視圖；及圖2係與第一實施例相比一顯示產生一側蝕之一實例之剖視圖。
11．．．基板
12．．．UBM層
13．．．Ti膜
14．．．Cu膜
14A．．．Cu-Ag(或Ag)膜
15．．．抗蝕劑膜
15A．．．開口
16．．．Ag膜
17．．．Sn膜
18．．．側蝕
19．．．焊料凸塊

Claims (20)

  1. 一種製造電子零件之方法，其包括：在一基板上方形成一第一金屬之一膜；藉由用一第二金屬替換該第一金屬之至少部分，以將該第一金屬之該膜部分地轉換為含有該第二金屬之一膜；在含有該第二金屬之該膜上方形成一第三金屬之一膜；及使用該第三金屬之該膜作為一遮罩，藉由濕式蝕刻來移除該第一金屬之該膜中除了含有該第二金屬之該膜外的該第一金屬之該膜，其中係藉由第1金屬與第2金屬之電位差，電化學地將第1金屬與第2金屬進行替換，並藉由此替換鍍敷，將包含第一金屬之膜部分地轉換成含有該第二金屬之膜。
  2. 如請求項1之製造電子零件之方法，其中該濕式蝕刻係使用一蝕刻劑，其蝕刻該第一金屬但不蝕刻該第二金屬或較該第一金屬而難以蝕刻該第二金屬。
  3. 如請求項1之製造電子零件之方法，其中該第一金屬比該第二金屬較不貴重。
  4. 如請求項3之製造電子零件之方法，其中藉由置換鍍覆執行該替換。
  5. 如請求項1之製造電子零件之方法，其中含有該第二金屬之該膜包括該第一金屬及該第二金屬。
  6. 如請求項5之製造電子零件之方法，其進一步包括對含 有該第二金屬之該膜執行熱處理，以將其轉換為包括該第一金屬及該第二金屬之一合金或一複合物之一膜。
  7. 如請求項1之製造電子零件之方法，其中含有該第二金屬之該膜主要由該第二金屬組成。
  8. 如請求項5之製造電子零件之方法，其中該第一金屬係一能夠與該第二金屬及第三金屬一起形成一共晶合金之金屬。
  9. 如請求項7之製造電子零件之方法，其中該第二金屬係一能夠與該第三金屬一起形成一共晶合金之金屬。
  10. 如請求項1之製造電子零件之方法，其中該第一金屬係Cu或Bi。
  11. 如請求項1之製造電子零件之方法，其中該第二金屬係Ag或Au。
  12. 如請求項1之製造電子零件之方法，其中該第三金屬係Sn。
  13. 如請求項1之製造電子零件之方法，其中藉由除電解鍍覆外之一方法形成該第一金屬之該膜。
  14. 如請求項1之製造電子零件之方法，其中藉由電解鍍覆形成該第三金屬之該膜。
  15. 如請求項1之製造電子零件之方法，其中在含有該第二金屬之該膜上方形成該第三金屬之該膜，其中該第二金屬之一膜夾持在該第二金屬之該膜 及該第三金屬之該膜之間。
  16. 如請求項15之製造電子零件之方法，其中藉由電解鍍覆形成該第二金屬之該膜。
  17. 如請求項1之製造電子零件之方法，其進一步包括在該第三金屬之該膜上/下形成一第四金屬之一膜。
  18. 如請求項1之製造電子零件之方法，其中該基板在其上具有包含選自一群組中之一材料之一膜，該群組由：Ti、Ta、W、Cr、V、Zr、Ni或由組合其中之任何兩者或更多者產生之合金或複合物而組成，且該第一金屬之該膜係形成在該基板上之包括該材料之該膜上。
  19. 如請求項18之製造電子零件之方法，其進一步包括在移除該第一金屬之該膜後，使用該第三金屬之該膜作為一遮罩，藉由濕式蝕刻移除包括藉由移除該第一金屬之該膜而已曝露之材料之該膜。
  20. 如請求項18之製造電子零件之方法，其進一步包括在移除該第一金屬之該膜後，藉由回流處理在包括該材料之該膜上形成一凸塊，且使用該凸塊作為一遮罩藉由濕式蝕刻移除包括藉由移除該第一金屬之該膜而已曝露之材料之該膜。
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