TWI518813B - 在基板上形成焊接合金沈積物之方法 - Google Patents

在基板上形成焊接合金沈積物之方法 Download PDF

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TWI518813B
TWI518813B TW100123721A TW100123721A TWI518813B TW I518813 B TWI518813 B TW I518813B TW 100123721 A TW100123721 A TW 100123721A TW 100123721 A TW100123721 A TW 100123721A TW I518813 B TWI518813 B TW I518813B
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Prior art keywords
solder
copper
alloy
layer
tin
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TW100123721A
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TW201207970A (en
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史文 蘭波瑞卻
凱 珍斯 瑪傑特
尹葛 艾維特
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德國艾托特克公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
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Description

在基板上形成焊接合金沈積物之方法
本發明係關於藉由電鍍形成焊接合金沈積物及關於(例如)IC基板與活性組件之間之焊接合。
自20世紀60年代初由IBM所引進之覆晶技術，便將覆晶裝置安裝於矽晶片與陶瓷基板之間之熱膨脹失配較十重要之昂貴陶瓷基板上。相較於線接合技術，覆晶技術可更佳地提供較高封裝密度(較小裝置輪廓)及較高電學性能(儘可能較短導線及較低電感)。在此基礎上，過去40年內已利用高溫焊接(可控塌陷晶片連接，C4)在陶瓷基板上工業實施覆晶技術。然而，於近年來，受到現代電子產品小型化趨勢對高密度、高速度及低成本半導體裝置之要求的驅使，以環氧底膠安裝於低成本有機電路板(例如，印刷電路板或基板)上以減輕矽晶片與有機板結構間之熱膨脹失配所導致之熱應力之覆晶裝置係經歷可觀的爆炸式生長。此引人矚目的低溫覆晶接合及有機型電路板之事件已可使目前工業獲得用於製造覆晶裝置之廉價解決方法。於現有低成本覆晶技術中，半導體積體電路(IC)晶片之頂表面具有一電接觸墊陣列。該有機電路板亦具有相應之接觸柵格。低溫焊料凸塊或其他導電黏性材料係放置於晶片與電路板之間及經適當對準。晶片係倒置覆蓋並安裝於電路板上，於該電路板中，焊料凸塊或導電黏性材料提供電輸入/輸出(I/O)及晶片與電路板之間之機械互連。就焊料凸塊接合而言，可將有機底膠封裝劑進一步分散於晶片與電路板之間之間隙中以約束熱失配及降低焊料接合上之應力。
一般，就藉由焊接合獲得覆晶組合件而言，常在晶片之墊片電極表面上預形成金屬凸塊，如焊料凸塊、金凸塊或銅凸塊，其中該等凸塊可呈任何形狀，如釘形凸塊、球形凸塊、柱狀凸塊或其他形狀。一般亦在電路板之接觸區域上採用低溫焊接形成相應焊料凸塊(或預焊凸塊)。於回焊溫度下，藉由焊接合將晶片接合至電路板。於分散底膠封裝劑之後，藉此建構覆晶裝置。此等方法係為本技術所熟知且使用焊接合之覆晶裝置之一般實例係(例如)描述於美國專利案7,098,126號(H.-K. Hsieh等)中。
現在，用於在電路板上形成預焊凸塊之最常見的方法係模板印刷法。與模板印刷法相關之一些先前建議可參考美國專利案5,203,075號(C.G. Angulas等)、美國專利案5,492,266號(K.G. Hoebener等)及美國專利案5,828,128號(Y. Higashiguchi等)。用於覆晶組合件之焊料凸塊技術需在設計上考量凸塊間距及尺寸小型化。根據實務經驗，一旦凸塊間距減小至低於0.15毫米，則模板印刷將變得不可行。相對地，藉由電鍍沈積之焊料凸塊提供將凸塊間距近一步降低至小於0.15毫米之能力。與電路板上用於覆晶接合之電鍍凸塊相關之先前建議可參見美國專利案5,391,514號(T.P. Gall等)及美國專利案5,480,835號(K.G. Hoebener等)。雖然在電路板上之電鍍焊料凸塊提供較模板印刷更精細之凸塊間距，然而，其在初始實施時存在數個難題。
在有機基板上形成焊接之一多步驟方法係描述於美國專利案7,098,126號(H.-K. Hsieh等)中。於該方法中，起始時提供包含一表面支承電路之一有機電路板，該電路包含至少一接觸區域。將一焊接遮罩層放置於該電路板表面上及圖案化以暴露該墊片。隨後，藉由物理氣相沈積、化學氣相沈積、使用觸媒銅之無電鍍或使用觸媒銅之電鍍在電路板表面上沈積一金屬晶種層。在該金屬晶種層上形成至少一開口位於墊片處之一阻焊層。隨後藉由電鍍在開口中形成焊料。最後，移除阻焊材料及阻焊材料底下之金屬晶種層。為了應用此方法，需要各種圖案化步驟，就方法效率之立場而言，此等步驟不適宜。此外，若相鄰接觸區域之間之距離(間距)因電子裝置小型化而變得極小，則該方法具有其限制性。
電路板導電凸塊結構之製造方法係揭示於US 2006/0219567 A1中。將焊料電鍍至基板上，藉由焊接遮罩部份保護之但無額外阻焊材料存在。然後，將一黏性層沈積於該焊料層上。隨後依一方式使該黏性層圖案化以於隨後之蝕刻步驟期間保護焊料塗覆之連接墊片。隨後蝕刻去除不為焊接沈積物所需之焊料，僅留下連接墊片上之經抗蝕材料保護之焊接沈積物。該黏性層係用作回蝕刻焊料之金屬阻焊材料及隨後用作焊料之腐蝕保護。
專利文獻US 7,174,630 B2揭示一種製造焊接沈積物之方法。將一第一阻焊層沈積於基板表面上並圖案化之，接著電鍍一第一金屬層。然後將一第二阻焊層沈積於該基板表面並圖案化之，接著電鍍一第二金屬層。該方法需要兩次不同的阻焊層施加、建構及移除程序，導致額外非所需之加工步驟。
因此，需提供一種在諸如電路板之基板上形成焊接沈積物之方法，其包含減少之加工步驟數目。此外，需提供對於焊接合金組合物產生高均勻性之焊料且亦適宜在極精細結構上形成焊接沈積物之電鍍方法。
因此，本發明之一目的係提供一種電鍍焊料層之方法以於一基板上製造一均勻層及體積之焊接合金沈積物。此方法應適宜填充具高縱橫比之凹槽結構而無留下空隙或凹坑。此外，該焊接合金沈積物應具有所需合金組成且在回焊操作之後具有所需熔點。較佳焊接合金沈積物係三元合金Sn-Ag-Cu及四元合金Sn-Ag-Cu-Ni且稱為首字母縮略字SAC合金(Sn-Ag-Cu(-Ni)-合金)。回焊操作後之焊接合金沈積物組成係藉由前沈積金屬晶種層、第一電鍍焊料層及第二電鍍焊料層之體積及組成控制。
本發明之另一目的係提供一種用於焊接合金沈積之方法，其具有減少之電鍍步驟數目及甚至當阻焊開口具有不同尺寸時亦可通用。
本發明之另一目的係提供一種在非導電基板(例如，印刷電路)上形成金屬晶種層之方法，該方法係用於製造形成覆晶焊接合及板間焊接合之電鍍焊接。此外，該金屬晶種層係用作在回焊操作期間形成合金之源，例如，後來形成SAC-合金之Cu組分係藉由該金屬晶種層提供。
總而言之，揭示一種在一基板上製造電鍍焊接合金沈積物以形成覆晶焊接合及板間焊接合之方法。根據本發明，提供一種包含表面支承電路之一非導電基板(如電路板)，其包含至少一個接觸區域。此接觸區域可為任何導電表面區域，例如，一接觸墊片或面向基板外部之一電路之最頂層區域。
在基板表面之一部分上施用一焊接遮罩及形成暴露該至少一接觸區域之至少一焊接遮罩開口之後，於整個表面區域上形成一導電晶種層。
然後，將一阻焊層沈積於該金屬晶種層上並結構化以暴露該至少一焊接遮罩開口及該至少一接觸區域。
隨後在基板之導電區域上電鍍較佳含有錫之一第一焊料層以形成焊接沈積物。
此後，將較佳由錫合金組成之一第二焊料層電鍍至該第一焊料層上。移除該金屬晶種層上之阻焊層。亦將該金屬晶種層自該焊接遮罩層區域移除。
隨後使經此處理之基板進行回焊操作，其中該第一焊料層熔融及將該金屬晶種層與該第二焊料層溶於該熔融之第一焊料層中以形成具有所需組成之合金焊接沈積物。
本發明提供一種在基板上形成具有均質及標的組成之焊接合金沈積物之方法，該方法係藉由沈積較佳由銅或銅合金組成之一金屬晶種層，電鍍較佳由錫組成之第一焊料層及然後電鍍較佳由錫合金組成之第二焊料層的方式進行。該方法特別適宜在電路板、IC基板或中介層上製造焊接凸塊。本發明方法獲得具有良好電鍍均勻性及均質元素組成之焊接凸塊。
術語「均質組成」係指在回焊後化學元素在焊接沈積物中之均質分佈。
術語「均勻性」及「均勻」係指均勻電鍍體積及層厚度，其在回焊後獲得類似或等高之焊接合金沈積物。
術語「元素組成」係指化學元素在一定體積之材料(如第二焊料層107)中之濃度。
該方法將在下文中更詳細地描述。本文中所顯示之圖係該方法之簡單說明。該等圖並非按比例繪畫，即其等不反映晶片封裝結構中各層之實際尺寸或特徵。在全文論述中，相同數字表示相同元件。
現參照圖1，根據本發明之一較佳實施例，提供一非導電基板101，其具有作為接觸區域實施例之接觸內層墊片102(圖1a)。該內層接觸墊片102一般係自諸如銅之金屬形成。該非導電基板101可係一電路板或一IC基板，其可由有機材料或纖維強化有機材料或顆粒強化有機材料等(例如，環氧樹脂、聚亞醯胺、雙馬來醯亞胺三嗪、氰酸酯、聚苯并環丁烯或其等玻璃纖維複合物等)製成。
將一焊接遮罩層103沈積於該非導電基板101之表面上。
焊接遮罩層103係一永久焊接遮罩且在製造印刷電路板之後維持與非導電基板101之表面結合。
藉由已知技術將該焊接遮罩層103沈積於該非導電基板101之表面上。可應用於本發明之實例係篩網印刷及/或光微影方法。根據本發明可使用各類焊接遮罩：UV硬化焊接遮罩、熱可固化二組分式焊接遮罩及光可成像焊接遮罩。
視需要，在該接觸墊片102(未顯示於圖1中)上形成一阻障層。該阻障層可係鎳黏性層、鎳合金或或金保護層。該阻障層亦可由鎳、鎳-磷、鈀、鈀-磷、銀、錫、鎳/鈀、鉻/鈦、鈀/金或鎳/鈀/金等製成，其可藉由電鍍、無電鍍、浸漬、或物理氣相沈積等完成。
為了藉由電鍍在非導電表面上及回焊製造較佳含有錫之均勻焊接合金沈積物，需在該非導電表面上形成之一金屬晶種層來觸發電鍍。此金屬晶種層104係描述於圖1b中。一般而言，該金屬晶種層104係(例如)藉由非導電表面之習知製造工業中之無電沈積形成且為本技術熟知。
根據本發明，將該金屬晶種層104沈積於包含接觸墊片區域102及焊接遮罩層103之非導電基板101之整個表面上。最佳金屬晶種層104材料係銅及銅合金，如銅-鎳合金、銅-釕合金及銅-銠合金。
金屬晶種層104可導電、提供黏性、容許其上表面中之暴露部分經電鍍及可防止隨後焊接沈積物遷移至接觸區域之底層金屬。或者，該金屬晶種層可係由兩金屬層組成。
可藉由描述於(例如)Printed Circuits Handbook，C.F. Coombs Jr.(編者)，第6版，McGraw Hill，第28.5至28.9頁及30.1至30.11頁中之各種方法活化非導電基板。此等方法涉及形成包含碳顆粒、Pd-離子、Pd膠粒或導電聚合物之一導電層。
此等方法中之一些係描述於專利文獻中且實例係如下提供：歐洲專利案EP 0 616 053號描述一種將金屬塗層施用至一非導電基板(不含無電塗層)之方法，其包含：
a.　使該基板與包含貴金屬/IVA族金屬溶膠之活化劑接觸以獲得經處理基板；
b.　使該經處理基板與具有高於11至13之pH之自加速及補給浸漬金屬組合物接觸，該金屬組合物包含下列各者之溶液：
(i)　Cu(II)、Ag、Au或Ni可溶性金屬鹽或其等混合物，
(ii)　IA族金屬氫氧化物，
(iii)　錯合劑，其包含有機材料且該金屬鹽之金屬離子之log K累積形成常數為0.73至21.95。
此方法獲得可用於隨後電塗覆之一導電薄層。此方法於本技術中係稱為「連接」方法。
美國專利案5,503,877號描述非導電基板之金屬化，其涉及使用錯合化合物以在非金屬基板上製造金屬晶種。此等金屬晶種為隨後電鍍提供充足導電性。此方法於本技術中係稱為所謂之「Neoganth」方法。
美國專利案5,693,209號係關於一種非導電基板金屬化之方法，其涉及使用導電吡咯聚合物。此方法於本技術中係稱為「緊密CP」方法。
歐洲專利案1 390 568 B1亦關於非導電基板之直接電解金屬化。其涉及使用導電聚合物以獲得隨後電塗覆用之一導電層。該等導電聚合物具有噻吩單元。該方法於本技術中係稱為「Seleo CP」方法。
最後，亦可藉由含膠狀或離化鈀離子之溶液活化非導電基板，其方法係描述於(例如)Printed Circuits Handbook,C.F. Coombs Jr.(編者)，第6版，McGraw Hill，第28.9及30.2至30.3頁中。
隨後可視需要實施無電鍍一中間金屬塗層以增加金屬晶種層104之厚度。藉由晶種層之協助，隨後可實施根據本發明之焊料層之電鍍。
根據本發明，該導電晶種層104可係由單一金屬層、單一金屬合金層或由至少兩獨立單層之多層所製成。適宜作為導電晶種層之金屬及金屬合金係選自由以下物質組成之群：銅、錫、鈷、鎳、銀、錫-鉛合金、銅-鎳合金、銅-鉻合金、銅-釕合金、銅-銠合金、銅-銀合金、銅-銥合金、銅-鈀合金、銅-鉑合金、銅-金合金及銅-稀土合金、銅-鎳-銀合金、銅-鎳-稀土金屬合金。較佳以銅或銅合金作為一導電晶種層104。
根據本發明之一較佳實施例、該金屬晶種層104亦可藉由無電鍍方法形成，其中觸媒金屬不使用貴金屬而將銅用作觸媒金屬。在一非導電基板上形成該觸媒銅之典型實例可參見美國專利案3,993,491及3,993,848號。
該金屬晶種層104之厚度較佳為小於0.1毫米及更佳介於0.0001毫米與0.005毫米之間。根據該金屬晶種層104於焊料層中之溶解度，該金屬晶種層104可完全溶於該焊接沈積物中或在回焊製程後仍至少部份地存在。於本發明之一較佳實施例中，該金屬晶種層104於回焊期間或之後完全溶於焊料層中。
以較薄該金屬晶種層104為較佳，因較薄晶種層可在蝕刻溶液中較快地移除。由於在蝕刻浴液中較短之接觸時間，故該蝕刻溶液對該焊接遮罩層103之破壞將降低至可接受之低程度。
現參照圖1c，藉由已知技術將一阻焊層105施用至該焊接遮罩層103並圖案化以暴露焊接遮罩開口及至少一接觸墊片102。
然後，在該金屬晶種層104上藉由電鍍形成一第一焊料層106(圖1d)。用於該第一焊料層106之第一焊料係選自由以下物質組成之群：錫、銦、鉍及含有上述金屬中至少一者之合金。最佳金屬係純錫。
此後，藉由電鍍將一第二焊料層107沈積於該第一焊料層106上(圖1e)。該第二焊料含有至少一選自由以下物質組成之群之元素：錫、鉛、銀、金、銅、鉍、銻、鋅、鎳、鋁、鎂、銦、碲、鎵、釕、銠、銥、鈀及鉑。
更佳，該第二焊料107係藉由錫與選自由以下物質組成之群之元素中之至少一者之混合物製成的錫合金：鉛、銀、銅、鉍、銻、鋅、鎳、鋁、鎂、銦、碲、鎵、釕、銠、銥、鈀及鉑。
用於第二焊料層107之最佳第二焊料係錫-銀合金。
於第一焊料層106與第二焊料107之較佳組合中，該第一焊料層106係由純錫組成且該第二焊料層107係由錫合金組成。
於第一焊料層106與第二焊料層107之最佳組合中，該第一焊料層106係由純錫組成及該第二焊料層107係由錫-銀合金組成。
錫及錫合金電鍍浴液係為本技術已知。常用錫或錫合金電鍍浴液組成及用於電鍍之加工參數係描述於下文中。
於浴液之其他組分中可添加抗氧化劑及表面活性劑。
Sn2+離子之源可係一可溶性含錫陽極，或當使用不溶性陽極時，係可溶性Sn2+離子源。甲烷磺酸錫Sn(MSA)2，因其高溶解度故係較佳Sn2+離子源。一般而言，Sn2+離子源之濃度足以提供約10 g/l至約200 g/l Sn2+至浴液中，較佳約15 g/l至約95 g/l，更佳約40 g/l至約60 g/l。例如，可添加Sn(MSA)2以提供約30 g/l至約60 g/l Sn2+離子至電鍍浴液。
較佳合金係錫-銀合金。於此情況中，電鍍浴液可額外含有可溶性銀鹽，常用者係硝酸鹽、乙酸鹽，及較佳甲烷磺酸鹽。一般而言，Ag+離子源之濃度足以提供約0.01 g/l至約1.5 g/l Ag+離子至浴液中，較佳約0.3 g/l至約0.7 g/l，更佳約0.4 g/l至約0.6 g/l。例如，可添加Ag(MSA)以提供約0.2 g/l至約1.0 g/l Ag+離子至該電鍍浴液中。
可將抗氧化劑添加至本發明之浴液中以使該浴液穩定以防溶液中之Sn2+離子氧化。可將諸如氫醌、兒茶酚及羥基、二羥基或三羥基苯甲酸中之任一者之較佳抗氧化劑依約0.1 g/l至約10 g/l，較佳約0.5 g/l至約3 g/l之濃度添加。例如，可將氫醌以約2 g/l之濃度添加至該浴液中。
可添加表面活性劑以促進基板之潤濕。該表面活性劑似用作弱沈積抑制劑，其可一定程度地抑制三維生長，藉此改良膜之形態及構形。其亦可有助於細化晶粒尺寸，產生更均勻的凸塊。示例性陰離子表面活性劑包括磷酸烷酯、磷酸烷基醚、硫酸烷酯、硫酸烷基醚、磺酸烷酯、磺酸烷基醚、羧酸醚、羧酸酯、磺酸烷基芳基酯、磺酸芳基烷醚、磺酸芳基酯及磺基琥珀酸酯。
本發明電解質電鍍浴液較佳具有酸性pH以抑制陰離子鈍化，獲得較佳陽離子效率及獲得較韌性沈積物。因此，浴液pH較佳係介於約0與約3之間。於一較佳實施例中，浴液pH係0。因此，可利用硝酸、乙酸及甲烷磺酸獲得較佳酸性pH。於一較佳實施例中，該酸係甲烷磺酸。該酸之濃度較佳係介於約50 g/l與約200 g/l之間，更佳介於約70 g/l與約120 g/l之間。例如，可將介於約50 g/l與約160 g/l之間之甲烷磺酸添加至該電鍍浴液中以獲得pH 0及用作導電電解質之浴液。
一般浴液組成係(例如)揭示於：Jordan：The Electrode-position of Tin and its Alloys，1995，p.71-84中。
可藉由直流(DC)或脈衝電鍍實施用於電鍍焊接沈積物電鍍用之錫及錫合金。脈衝電鍍技術係特別適宜填充如圖1及2中所示之本發明結構。脈衝電鍍之優點係較佳表面分佈均勻性及具有較細晶粒尺寸及進而較佳可焊接性之錫沈積物之較佳結晶結構。此外，可藉由脈衝電鍍獲得相較於DC電鍍更高之可施加電流密度及進而更高之生產率。
一般而言，可施加有效電流密度為1至20 A/dm2之電流脈衝。或者，可藉由電流密度為0.3至5 A/dm2之DC進行浴液操作。
例如，藉由3 A/dm2之電流密度施加錫脈衝電鍍在30分鐘的電鍍時間內產生40 μm之錫沈積物平均厚度。表面上之厚度變化僅為+/-15%。施用DC電鍍可獲得僅1 A/dm2之最大電流密度。獲得40 μm之錫沈積物厚度之電鍍時間係86分鐘。表面上之變化係+/-33%，因此遠較脈衝電鍍更高。
較佳脈衝參數如下：將至少一正向電流脈衝之持續時間對至少一逆向電流脈衝之持續時間之比調節至至少1:0至1:7，較佳至少1:0.5至1:4及更佳至少1:1至1:2.5。
可將該至少一正向電流脈衝之持續時間調節至較佳至少5 ms至1000 ms。
將該至少一逆向電流脈衝之持續時間調節至0.2至5 ms及最佳0.5至1.5 ms。
較佳將該至少一正向電流脈衝在工件上之峰值電流密度調節至1至30 A/dm2之值。在水平方法中，該至少一正向電流脈衝在工件上之峰值電流密度特佳為2至8 A/dm2。在直立方法中，該至少一正向電流脈衝在工件上之最佳峰值電流密度為1至5 A/dm2。
較佳將該至少一逆向電流脈衝在工件上之峰值電流密度調節至0至60 A/dm2之值。於水平方法中，該至少一逆向電流脈衝在工件上之峰值電流密度特佳為0至20 A/dm2。於直立方法中，該至少一逆向電流脈衝在工件上之最佳峰值電流密度為0至12 A/dm2。
可將本技術已知之陽極(如錫陽極)用於藉由電鍍沈積錫及錫合金。然而，就合金金屬係較錫更昂貴(例如，銀)之錫合金而言，以諸如鈦陽極、鍍鉑鈦陽極及鈦混合氧化物陽極之惰性陽極為較佳。
於根據圖1之結構中之焊接遮罩開口109較佳具有約5至1000 μm，較佳約10至500 μm及甚至更佳20至100 μm之尺寸。
該等焊接遮罩開口109之寬度可於5至250 μm，較佳10至50 μm之間變化(圖1a)。相鄰接觸區域之中點之距離係表示為間距且介於90至300μm(就IC基板而言)及150至1000μm(就印刷電流而言)之間。
參照圖1f，將經圖案化之阻焊層105及金屬晶種層104自焊接遮罩層103移除。移除較佳係藉由自焊接遮罩層區域103化學蝕刻一定量之金屬晶種層104而留下該至少一接觸區域上之第一及第二焊料層106及107之方式實施。可以電解或化學方式進行銅及銅合金蝕刻，亦稱為剝離。適宜蝕刻溶液可係應用例行實驗選擇。
此外，可將機械拋光單獨或與電解或化學剝離組合施用以移除金屬晶種層104。
用於銅及銅合金之一般蝕刻或剝離組合物係(例如)揭示於Printed Circuits Handbook，C.F. Coombs Jr.(編者)，第6版，McGraw Hill，第34.6至34.18頁中。
用於銅及銅合金之一般蝕刻組合物係過硫酸鹽與硫酸之混合物、卡羅酸、過氧化物與礦物酸之混合物、CuCl2、過氧化物及礦物酸之混合物、CuCl2與氨水之混合物。
視需要，隨後使該基板與後處理組合物接觸以防止錫或錫合金表面氧化及褪色。針對該目的之適宜後處理組合物常係基於含有無機或有機磷之化合物及其等混合物。具體組合物係揭示於(例如)EP 2 014 798 A1及EP 1 716 949 B1中。
於回焊溫度下，可形成覆晶或BGA接合。此外，金屬晶種層104、第一焊料層及第二焊料層可彼此溶解，同時在回焊操作期間形成一均勻合金焊接沈積物108(圖1g)。本發明提供兩種該均勻合金焊接沈積物108之組成之調節模式。該至少一個別金屬晶種層、第一焊料層及第二焊料層中各者之組成及其等在沈積後之個別體積係用於獲得具有極確定組成之最終合金焊接沈積物108，即合金焊接沈積物108之所需熔融溫度。
較佳最終焊接合金沈積物108含有大於50重量%之錫。
於最終焊接合金沈積物108中之較佳銀濃度係介於1至6重量%之間。
於最終焊接合金沈積物108中之較佳銅濃度係介於0.05至2重量%之間。
根據本發明之一較佳實施例，可施用該電鍍焊接凸塊以形成覆晶接合及板間焊接合。
該等焊接凸塊可呈任何形狀，如釘形凸塊、球形凸塊、柱狀凸塊或其他形狀。
雖然已針對如圖1之基板詳細論述此製程順序，然而，其不限制於此且可應用至所有類型之基板。可相應處理之本發明之另一較佳實施例係顯示於圖2中。
根據本發明，該焊接遮罩層103不限制於覆蓋該接觸墊片102表面之一部分。如圖2中所示，該焊接遮罩層103係沈積於該非導電表面101之表面上，但不覆蓋該接觸墊片102表面之任何部分。接著，形成該導電晶種層104。隨後，在該開口中形成覆蓋該接觸墊片102之焊料沈積層106及107。此結構係稱為非焊接遮罩界定墊片基板。
以下實例進一步說明本發明。
實例 實例1
使用根據圖1a具有一接觸墊片結構之一IC基板。
電鍍順序係依照圖1。
首先以標準程序清潔該IC基板及隨後在包含過氧化氫及硫酸之水性組合物中微蝕刻之。
然後，將具有25 μm之厚度之一焊接遮罩(Lackwerke Peters,ELPEMER SD 2467 SG-DG(525))沈積於該非導電基板101上(圖1a)。將該焊接遮罩光結構化以暴露至少一接觸墊片102。
在整個基板表面上形成一銅之金屬晶種層104(圖1b)。就此而言，首先使該表面與含有離化鈀之酸性溶液接觸，及隨後與用於無電銅沈積之溶液接觸。
然後，將一乾膜光阻材料105(PM250,DuPont)層壓至該焊接遮罩層103上。以一標準程序使該乾膜光阻材料圖案化(圖1c)。
此後，將一錫層(第一焊料層106)自含有以下物質之浴液電鍍於該導電層上(圖1d)：45 g/l Sn2+(呈Sn(MSA)2形式)、60 ml/l MSA(70%溶液)、2 g/l氫醌及100 mg/l亞苄基丙酮。
浴液之pH係低於1，溫度為25℃。電鍍持續20分鐘。應用以下參數使用DC電鍍：平均電流密度：2.5 A/dm2；根據圖1d之焊接遮罩開口係由錫焊料完全填充而無任何空隙形成。
然後，藉由電鍍將錫-銀合金層(第二焊料層107)自含有以下物質之浴液沈積於該第一焊料層106上(圖1e)：40 g/l Sn2+(呈Sn(MSA)2形式)，1.5 g/l Ag+(呈Ag(MSA)形式)、60 ml/l MSA(70%溶液)、2 g/l氫醌及100 mg/l亞苄基丙酮。
該浴液之pH係低於1，溫度為25℃。電鍍持續15分鐘。
應用以下參數使用DC電鍍：平均電流密度：2 A/dm2；根據圖1e之阻焊開口110係以錫-銀合金材料填充而無任何空隙形成。
在沈積該第一焊料層106及該第二焊料層107之後，以2重量%碳酸鉀水溶液移除經圖案化之乾膜光阻材料(圖1f)。
此後，藉於含有30體積%硝酸之溶液中40℃之溫度下處理1分鐘移除該焊接遮罩層103上之金屬晶種層104(圖1f)。於蝕刻製程之後，該焊接遮罩區域103上之銅金屬晶種層104被完全移除(圖1f)。
隨後令基板進行回焊操作，其中該金屬晶種層104、該第一焊料106及該第二焊料107形成一均勻SAC合金焊接沈積物108。
該錫焊接沈積物展現極均質表面分佈及無晶鬚。其適宜焊接至晶片或電路。
實例2
具有50 μm直徑及20 μm高度之焊接遮罩開口之一基板係經無電鍍銅-鎳塗覆以作為金屬晶種層104。沈積一阻焊層及形成具有80 μm直徑及50 μm高度之阻焊開口110。隨後，藉由電鍍以錫作為該第一焊料層106填充該焊接遮罩開口109及15 μm高之阻焊開口110。然後，將錫-銀合金作為第二焊料層107電鍍至第一焊料層106上以電鍍填充15 μm高之阻焊開口110。
該金屬晶種層104具有0.2 μm之厚度及1.055 μg之重量。該金屬晶種層係由95重量%銅及5重量%鎳組成。
在各開口中沈積作為該第一焊料層106之錫之重量係83.7 μg。
在各開口中沈積作為第二焊料層107之錫-銀合金之重量係55 μg及銀含量係6重量%。
然後，移除阻焊層105及令基板進行回焊操作。所得之焊接合金沈積物108具有96.9重量%錫、2.36重量%銀、0.75重量%銅及0.04重量%鎳之均勻組成，該組成類似用作焊接之常見四元SAC合金之組成。
實例3
以50 μm之焊接遮罩開口直徑及60 μm之阻焊開口110直徑重複實例2。沈積具有0.25 μm厚度及5重量%鎳含量之一銅層以作為金屬晶種層104。藉由電鍍沈積具有90.6 μg重量之一純錫層以作為該第一焊料層106。然後，藉由電鍍將具有10 μm高度及20.6 μg重量之一錫-銀合金層作為第二焊料層107沈積至阻焊開口110中。該第二焊料層107含有6重量%之銀。
接著，移除該阻焊層106及令基板進行回焊操作。所得之焊接合金沈積物108具有98.1重量%錫、1.1重量%銀、0.76重量%銅及0.04重量%鎳之均勻組成，該組成類似於用作焊料之常見四元SAC-合金之組成。
101．．．非導電基板
102．．．接觸墊片
103．．．焊接遮罩層
104．．．金屬晶種層
105．．．阻焊層
106．．．第一焊料層
107．．．第二焊料層
108．．．均勻焊接合金沈積物
109．．．焊接遮罩開口
110．．．阻焊層開口
圖1a至1g顯示藉由一具有具所需組成之電鍍合金焊接沈積物之盲微通孔(BMV)獲得焊接遮罩界定墊片之方法。
圖2a至2g顯示藉由具有具所需組成之電鍍合金焊接沈積物之盲微通孔(BMV)獲得非焊接遮罩界定墊片之方法。
101．．．非導電基板
102．．．接觸墊片
103．．．焊接遮罩層
108．．．均勻焊接合金沈積物

Claims (8)

  1. 一種在基板上形成焊接合金沈積物之方法，其包含以下步驟：i)提供包含表面支承電路之基板101，該表面支承電路包含至少一接觸區域102，ii)形成位於該基板表面上且經圖案化以暴露該至少一接觸區域102之焊接遮罩層103，iii)使包含該焊接遮罩層103及該至少一接觸區域102之整個基板區域與適宜在該基板表面上提供金屬晶種層104之溶液接觸，iv)在該金屬晶種層上形成阻焊層及在該阻焊層105上建造開口以暴露該等焊接遮罩開口110及該至少一接觸區域102，v)將由純錫組成之第一焊料層106電鍍至該金屬晶種層104上，vi)將由錫-銀合金組成之第二焊料層107電鍍至該第一焊料層106上，vii)移除該阻焊層105及蝕刻去除一定量之該金屬晶種層104以足將該金屬晶種層自該焊接遮罩層區域移除，而在該至少一接觸區域102上留下兩堆疊之焊料層，viii)回焊該基板及藉此自該金屬晶種層102、該第一焊料層106及該第二焊料層107形成焊接合金沈積物108，其中該焊接合金沈積物108之組成係藉由該金屬晶種層102、該第一焊料層106及該第二焊料層107之體積及 其等各自元素組成控制，及其中該焊接合金沈積物108包含大於50重量%之錫，1至6重量%之銀及0.05至2重量%之銅。
  2. 如請求項1之方法，其中該金屬晶種層102係選自由以下組成之群：銅、錫、鈷、鎳、銀、錫-鉛合金、銅-鎳合金、銅-鉻合金、銅-釕合金、銅-銠合金、銅-銀合金、銅-銥合金、銅-鈀合金、銅-鉑合金、銅-金合金及銅-稀土金屬合金、銅-鎳-銀合金、銅-鎳-稀土金屬合金、銅/錫(雙層)、鉻/銅-鉻合金/銅多層及鎳/錫/銅多層。
  3. 如請求項1或2之方法，其中該金屬晶種層102係選自由以下組成之群：銅、銅-鎳合金、銅-釕合金及銅-銠合金。
  4. 如請求項1或2之方法，其中該焊接合金沈積物108係選自由錫-銀-銅合金及錫-銀-銅-鎳合金組成之群。
  5. 如請求項1或2之方法，其中該基板係印刷電路板、IC基板或中介層。
  6. 如請求項3之方法，其中該焊接合金沈積物108係選自由錫-銀-銅合金及錫-銀-銅-鎳合金組成之群。
  7. 如請求項3之方法，其中該基板係印刷電路板、IC基板或中介層。
  8. 如請求項4之方法，其中該基板係印刷電路板、IC基板或中介層。
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